© 2008 IXYS CORPORATION, All rights reserved DS99894A (04/08)
VDSS = 1200V
ID25 = 12A
RDS(on) ≤≤
≤≤
≤ 1.35ΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 300ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Features
zInternational standard packages
zFast recovery diode
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
Advantages
zEasy to mount
zSpace savings
zHigh power density
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1200 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1200 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C12A
IDM TC= 25°C, pulse width limited by TJM 30 A
IATC= 25°C6A
EAS TC= 25°C 500 mJ
dV/dt IS≤ IDM, VDD ≤ VDSS,T
J ≤ 150°C 15 V/ns
PDTC= 25°C 543 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum lead temperature for soldering 300 °C
TSOLD Plastic body for 10s 260 °C
MdMounting torque (TO-247) 1.13/10 Nm/lb.in.
FCMounting force (PLUS 220) 11..65 / 2.5..14.6 N/lb.
Weight TO-247 6 g
PLUS 220 types 4 g
G = Gate D = Drain
S = Source TAB = Drain
IXFH12N120P
IXFV12N120P
IXFV12N120PS
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 1200 V
VGS(th) VDS = VGS, ID = 1mA 3.5 6.5 V
IGSS VGS = ± 30V, VDS = 0V ± 100 nA
IDSS VDS = VDSS 25 μA
VGS = 0V TJ = 125°C 2 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 1.15 1.35 Ω
PolarTM Power MOSFET
HiPerFETTM
GSD (TAB)
PLUS220SMD (IXFV_S)
TO-247 (IXFH)
PLUS220 (IXFV)
GDS
D (TAB)
D (TAB)
Applications:
zHigh Voltage Switched-mode and
resonant-mode power supplies
zHigh Voltage Pulse Power Applications
zHigh Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
zHigh Voltage DC-DC converters
zHigh Voltage DC-AC inverters
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH12N120P IXFV12N120P
IXFV12N120PS
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 5 9 S
Ciss 5400 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 290 pF
Crss 40 pF
RGi Gate input resistance 1.5 Ω
td(on) 34 ns
tr 25 ns
td(off) 62 ns
tf 34 ns
Qg(on) 103 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 29 nC
Qgd 41 nC
RthJC 0.23 °C/W
RthCS (TO-247, PLUS 220) 0.21 °C/W
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 12 A
ISM Repetitive, pulse width limited by TJM 48 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 300 ns
QRM 0.5 μC
IRM 6 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IF = 6A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG= 2Ω (External)
TO-247 (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
PLUS220 (IXFV) Outline
PLUS220SMD (IXFV_S) Outline
© 2008 IXYS CORPORATION, All rights reserved
IXFH12N120P IXFV12N120P
IXFV12N120PS
Fi g. 1. Outpu t C h ar acteristi c s
@ 25ºC
0
2
4
6
8
10
12
0246810121416
V
DS
- Volts
I
D
- A mpe res
V
GS
= 10V
8V
5
V
7
V
6
V
Fig. 2. Extended Output Characteristics
@ 25º C
0
2
4
6
8
10
12
14
16
18
20
0 4 8 121620242832
V
DS
- Volts
I
D
- Am peres
V
GS
= 10V
8V
7
V
6
V
5
V
Fig. 3. Output Characteristics
@ 125ºC
0
2
4
6
8
10
12
0 5 10 15 20 25 30 35
V
DS
- Volts
I
D
- A m peres
V
GS
= 10V
7V
5V
6V
Fig. 4. RDS(on) Normalized to ID = 6A Value
vs. Jun cti o n Temper atur e
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigra de
R
DS(on)
- N ormaliz ed
V
GS
= 10V
I
D
= 12A
I
D
= 6A
Fig. 5. RDS(on) Normalized to ID = 6A Value
vs. Drai n Cur rent
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
02468101214161820
I
D
- Amperes
R
DS(on)
- N ormalize d
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
Fi g. 6. Maximu m D r ai n Cur r en t vs .
Case Temp e r atu r e
0
1
2
3
4
5
6
7
8
9
10
11
12
13
-50-250 255075100125150
T
C
- Deg ree s Cent i grade
I
D
- Am peres
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH12N120P IXFV12N120P
IXFV12N120PS
IXYS REF: F_12N120P(76) 04-01-08-A
Fi g . 7. Inp u t Admi ttan ce
0
2
4
6
8
10
12
14
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
VGS - Vo lts
ID - Ampe re s
TJ
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
2
4
6
8
10
12
14
16
024681012141618
ID - Amperes
g
f s - Siem ens
TJ
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
5
10
15
20
25
30
35
40
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VSD - Volts
IS - A m p e re s
TJ
= 125ºC TJ = 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090100110
QG - Nan oCo ulombs
VGS - V olt s
VDS
= 600V
I D = 6A
I G = 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
VDS - V olts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maximu m Tr a n si en t Ther mal
Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - ºC / W
