ICTE12C-E3/1 - VISHAY - Datasheet.Directory

ICTE5 thru ICTE18C, 1N6373 thru 1N6386

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Revision: 18-Sep-12 1Document Number: 88356

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TRANSZORB® Transient Voltage Suppressors

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional types, use C suffix (e.g. ICTE18C).

Electrical characteristics apply in both directions.

FEATURES

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 1500 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate (duty

cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

MECHANICAL DATA

Case: Molded epoxy body over passivated junction

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant and commercial grade

Base P/NHE3 - RoHS compliant and AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: For uni-directional types the color band denotes

cathode end, no marking on bi-directional types

Notes

(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2

(2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum

PRIMARY CHARACTERISTICS

VWM 5.0 V to 18 V

VBR (uni-directional) 6.0 V to 21.2 V

VBR (bi-directional) 9.2 V to 21.2 V

PPPM 1500 W

PD6.5 W

IFSM 200 A

TJ max. 175 °C

Polarity Uni-directional, bi-directional

Package 1.5KE

Case Style 1.5KE

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1) PPPM 1500 W

Peak pulse current with a 10/1000 μs waveform (1) (fig. 3) IPPM See next table A

Power dissipation on infinite heatsink at TL = 75 °C (fig. 8) PD6.5 W

Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) IFSM 200 A

Maximum instantaneous forward voltage at 100 A for uni-directional only VF3.5 V

Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C

ICTE5 thru ICTE18C, 1N6373 thru 1N6386

www.vishay.com Vishay General Semiconductor

Revision: 18-Sep-12 2Document Number: 88356

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) “C” suffix indicates bi-directional

(2) ICTE5 and 1N6373 are not available as bi-directional

(3) Clamping factor: 1.33 at full rated power; 1.20 at 50 % rated power; clamping factor: the ratio of the actual VC (clamping voltage) to the VBR

(breakdown voltage) as measured on a specific device

Note

(1) AEC-Q101 qualified

ELECTRICAL CHARACTERISTICS (JEDEC REGISTERED DATA) (TA = 25 °C unless otherwise noted)

JEDEC

TYPE

NUMBER

GENERAL

SEMICONDUCTOR

PART NUMBER

STAND-OFF

VOLTAGE

VWM (V)

MINIMUM

BREAKDOWN

VOLTAGE

AT 1.0 mA

VBR (V)

MAXIMUM

REVERSE

LEAKAGE

AT VWM

ID (μA)

MAXIMUM

CLAMPING

VOLTAGE

AT IPP = 1.0 A

VC (V)

MAXIMUM

CLAMPING

VOLTAGE AT

IPP = 10 A

VC (V)

MAXIMUM

PEAK

PULSE

CURRENT

IPP (A)

UNI-DIRECTIONAL TYPES

1N6373 (2) ICTE5 (2) 5.0 6.0 300 7.1 7.5 160

1N6374 ICTE8 8.0 9.4 25.0 11.3 11.5 100

1N6375 ICTE10 10.0 11.7 2.0 13.7 14.1 90

1N6376 ICTE12 12.0 14.1 2.0 16.1 16.5 70

1N6377 ICTE15 15.0 17.6 2.0 20.1 20.6 60

1N6378 ICTE18 18.0 21.2 2.0 24.2 25.2 50

BI-DIRECTIONAL TYPES

1N6382 ICTE8C 8.0 9.4 50 11.4 11.6 100

1N6383 ICTE10C 10.0 11.7 2.0 14.1 14.5 90

1N6384 ICTE12C 12.0 14.1 2.0 16.7 17.1 70

1N6385 ICTE15C 15.0 17.6 2.0 20.8 21.4 60

1N6386 ICTE18C 18.0 21.2 2.0 24.8 25.5 50

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

ICTE5-E3/54 0.968 54 1400 13" diameter paper tape and reel

ICTE5HE3/54 (1) 0.968 54 1400 13" diameter paper tape and reel

ICTE5 thru ICTE18C, 1N6373 thru 1N6386

www.vishay.com Vishay General Semiconductor

Revision: 18-Sep-12 3Document Number: 88356

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Peak Pulse Power Rating Curve

Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature

Fig. 3 - Pulse Waveform

Fig. 4 - Typical Junction Capacitance Uni-Directional

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Maximum Non-Repetitive Forward Surge Current

Uni-Directional Only

td - Pulse Width (s)

PPPM - Peak Pulse Power (kW)

1.0 µs 10 µs 100 µs 1.0 ms 10 ms

0.1 µs

0.1

100

Non-Repetitive Pulse

Waveform shown in Fig. 3

TA = 25 °C

100

0 25 50 75 100 125 150 175 200

Peak Pulse Power (P

) or Current (I

)

Derating in Percentage, %

TJ - Initial Temperature (°C)

100

150

= 10 µs

Peak Value

IPPM

Half Value -

IPPM

10/1000 µs Waveform

as defined by R.E.A.

01.0 2.0 3.0 4.0

t - Time (ms)

PPM

- Peak Pulse Current, % I

RSM

= 25 °C

Pulse Width (t

)

is defined as the Point

where the Peak Current

decays to 50 % of I

PPM

VBR - Breakdown Voltage (V)

CJ - Junction Capacitance (pF)

100

1000

10 000

100 000

1.0 100 200

Measured at

Zero Bias

Measured at Stand-Off

Voltage VWM

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

- Breakdown Voltage (V)

- Junction Capacitance (pF)

100

1000

10 000

100 000

101.0 100 200

Bi-Directional Type

Measured at

Zero Bias

Measured at Stand-Off

Voltage V

Non-Repetitive Pulse

Waveform shown in Fig. 3

= 25 °C

Number of Cycles at 60 Hz

IFSM - Peak Forward Surge Current (A)

1510 50 100

100

200

TJ = TJ max.

8.3 ms Single Half Sine-Wave

ICTE5 thru ICTE18C, 1N6373 thru 1N6386

www.vishay.com Vishay General Semiconductor

Revision: 18-Sep-12 4Document Number: 88356

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 7 - Typical Characteristics Clamping Voltage Fig. 8 - Power Derating Curve

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

- Clamping Voltage (V)

- Peak Pulse Current (A)

10861214161820222426

Uni-Directional Only

= 25 °C

ICTE5

ICTE8

ICTE10

ICTE12

ICTE18

ICTE15

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

0 25 50 75 100 125 150 175 200

- Power Dissipation (W)

- Lead Temperature (°C)

L = 0.375" (9.5 mm)

Lead Lengths

1.0 (25.4)

MIN.

1.0 (25.4)

MIN.

0.375 (9.5)

0.285 (7.2)

0.210 (5.3)

0.190 (4.8)

DIA.

0.042 (1.07)

0.038 (0.96)

DIA.

Case Style 1.5KE

Legal Disclaimer Notice

www.vishay.com Vishay

Revision: 02-Oct-12 1Document Number: 91000

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