QFET (R) FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. * * * * * * rDS(on) = 4.7 @ VGS = 10 V Low gate charge (typical 8.5 nC) Low Crss (typical 4.3 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 Absolute Maximum Ratings Symbol VDSS ID TO-220F GD S FQP Series TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current FQP2N60C IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR EAR TJ, TSTG TL - Pulsed FQPF2N60C Units V 600 - Continuous (TC = 100C) dv/dt PD S FQPF Series (Note 1) 2.0 2.0 * A 1.35 1.35 * A 8 8* A 30 V (Note 2) 120 mJ Avalanche Current (Note 1) 2.0 A Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 1) 5.4 4.5 -55 to +150 mJ V/ns W W/C C 300 C (Note 3) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 54 0.43 23 0.18 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case RCS Thermal Resistance, Case-to-Sink Typ. RJA Thermal Resistance, Junction-to-Ambient (c)2006 Fairchild Semiconductor Corporation FQP2N60C/FQPF2N60C, Rev. A1 FQP2N60C 2.32 FQPF2N60C 5.5 Units C/W 0.5 -- C/W 62.5 62.5 C/W www.fairchildsemi.com http://store.iiic.cc/ FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET April 2006 Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 600 -- -- V -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.6 VDS = 600 V, VGS = 0 V -- -- 1 A VDS = 480 V, TC = 125C -- -- 10 A Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 3.6 4.7 -- 5.0 -- S -- 180 235 pF -- 20 25 pF -- 4.3 5.6 pF -- 9 28 ns -- 25 60 ns -- 24 58 ns -- 28 66 ns -- 8.5 12 nC -- 1.3 -- nC -- 4.1 -- nC IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A rDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 1 A gFS Forward Transconductance VDS = 40 V, ID = 1 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 2 A, RG = 25 (Note 4, 5) VDS = 480 V, ID = 2 A, VGS = 10 V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 2 A ISM -- -- 8 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 2 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 230 -- ns Qrr Reverse Recovery Charge -- 1.0 -- C VGS = 0 V, IS = 2 A, dIF / dt = 100 A/s (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 56mH, IAS = 2A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 2A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature www.fairchildsemi.com FQP2N60C/FQPF2N60C, Rev. A1 http://store.iiic.cc/ FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET Electrical Characteristics 1 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 0 10 ID, Drain Current [A] ID, Drain Current [A] Top : -1 10 o 150 C o -55 C 0 10 o 25 C Notes : 1. 250us Pulse Test o 2. TC = 25 C Notes : 1. VDS = 40V 2. 250us Pulse Test -2 -1 10 -1 0 10 10 1 10 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 IDR, Reverse Drain Current [A] rDS(ON) [Ohm], Drain-Source On-Resistance 12 VGS = 10V 8 6 4 VGS = 20V 2 o Note : TJ = 25 C 0 0 10 o 150 C 2. 250us Pulse Test -1 0 1 2 3 4 10 5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-Drain voltage [V] ID, Drain Current [A] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 500 12 Ciss = Cgs + Cgd (Cds = shorted) 450 Coss = Cds + Cgd Ciss 300 Coss 250 200 Note ; 1. VGS = 0 V 150 2. f = 1 MHz 100 Crss 50 VGS, Gate-Source Voltage [V] 350 VDS = 120V 10 Crss = Cgd 400 Capacitances [pF] Notes : 1. VGS = 0V o 25 C VDS = 300V 8 VDS = 480V 6 4 2 Note : ID = 2A 0 -1 10 0 10 0 1 10 0 2 4 6 8 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.fairchildsemi.com FQP2N60C/FQPF2N60C, Rev. A1 http://store.iiic.cc/ FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET Typical Characteristics (Continued) 3.0 1.1 1.0 Notes : 1. VGS = 0 V 0.9 2.5 rDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2. ID = 250 uA 2.0 1.5 1.0 ? Notes : 1. VGS = 10 V 0.5 2. ID = 1 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 o 50 100 100 s ID, Drain Current [A] ID, Drain Current [A] 100 s 1 ms 10 ms 100 ms 0 DC -1 10 Notes : o 1. TC = 25 C 1 ms 10 ms 100 ms 0 10 DC -1 10 Notes : o 1. TC = 25 C o o 2. TJ = 150 C 2. TJ = 150 C 3. Single Pulse 3. Single Pulse -2 -2 10 200 Operation in This Area is Limited by R DS(on) 1 10 10 150 Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on) 1 0 TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature 10 -50 o TJ, Junction Temperature [ C] 0 1 10 2 10 3 10 10 10 0 10 VDS, Drain-Source Voltage [V] 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for FQP2N60C Figure 9-2. Maximum Safe Operating Area for FQPF2N60C 2.4 ID, Drain Current [A] 2.0 1.6 1.2 0.8 0.4 0.0 25 50 75 100 125 150 o TC, Case Temperature [ C] Figure 10. Maximum Drain Current vs Case Temperature www.fairchildsemi.com FQP2N60C/FQPF2N60C, Rev. A1 http://store.iiic.cc/ FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET Typical Characteristics N o te s : 1 . Z JC ( t) = 2 .3 2 0 .2 C /W M a x . 3 . T JM - T C = P D M * Z JC ( t) 0 .1 PDM 0 .0 5 10 o 2 . D u ty F a c to r , D = t 1 / t 2 -1 t1 0 .0 2 0 .0 1 JC (t), Thermal Response (Continued) D = 0 .5 0 10 FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET Typical Characteristics t2 Z s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11-1. Transient Thermal Response Curve for FQP2N60C 10 0 .2 N o te s : 1 . Z JC ( t) = 5 .5 0 .1 0 .0 5 10 Z C /W M a x . PDM 0 .0 2 0 .0 1 -1 o 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T JM - T C = P D M * Z JC ( t) t1 JC (t), Thermal Response D = 0 .5 0 t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF2N60C www.fairchildsemi.com FQP2N60C/FQPF2N60C, Rev. A1 http://store.iiic.cc/ FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms www.fairchildsemi.com FQP2N60C/FQPF2N60C, Rev. A1 http://store.iiic.cc/ FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms www.fairchildsemi.com FQP2N60C/FQPF2N60C, Rev. A1 http://store.iiic.cc/ TO-220 4.50 0.20 2.80 0.10 (3.00) +0.10 1.30 -0.05 18.95MAX. (3.70) o3.60 0.10 15.90 0.20 1.30 0.10 (8.70) (1.46) 9.20 0.20 (1.70) 9.90 0.20 (45 1.52 0.10 10.08 0.30 (1.00) 13.08 0.20 ) 1.27 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] +0.10 0.50 -0.05 2.40 0.20 10.00 0.20 Dimensions in Millimeters www.fairchildsemi.com FQP2N60C/FQPF2N60C, Rev. A1 http://store.iiic.cc/ FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET Package Dimensions (Continued) TO-220F 3.30 0.10 10.16 0.20 2.54 0.20 o3.18 0.10 (7.00) (1.00x45) 15.87 0.20 15.80 0.20 6.68 0.20 (0.70) 0.80 0.10 0 (3 9.75 0.30 MAX1.47 ) #1 +0.10 0.50 -0.05 2.54TYP [2.54 0.20] 2.76 0.20 2.54TYP [2.54 0.20] 9.40 0.20 4.70 0.20 0.35 0.10 Dimensions in Millimeters www.fairchildsemi.com FQP2N60C/FQPF2N60C, Rev. A1 http://store.iiic.cc/ FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET Package Dimensions The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 www.fairchildsemi.com FQP2N60C/FQPF2N60C, Rev. A1 http://store.iiic.cc/ FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET TRADEMARKS