FQP2N60C - Fairchild - Datasheet.Directory

FQP2N60C/FQPF2N60C, Rev. A1

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FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET

QFET

April 2006

FQP2N60C/FQPF2N60C

2.0A, 600V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction, electronic lamp ballasts

based on half bridge topology.

Features

•r

DS(on) = 4.7Ω @ VGS = 10 V

• Low gate charge (typical 8.5 nC)

• Low Crss (typical 4.3 pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter FQP2N60C FQPF2N60C Units

VDSS Drain-Source Voltage 600 V

IDDrain Current - Continuous (TC = 25°C) 2.0 2.0 * A

- Continuous (TC = 100°C) 1.35 1.35 * A

IDM Drain Current - Pulsed (Note 1) 88 * A

VGSS Gate-Source Voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 120 mJ

IAR Avalanche Current (Note 1) 2.0 A

EAR Repetitive Avalanche Energy (Note 1) 5.4 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PDPower Dissipation (TC = 25°C) 54 23 W

- Derate above 25°C 0.43 0.18 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8∀ from case for 5 seconds 300 °C

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol Parameter FQP2N60C FQPF2N60C Units

RθJC Thermal Resistance, Junction-to-Case 2.32 5.5 °C/W

RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W

RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

TO-220

FQP Series

DTO-220F

FQPF Series

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FQP2N60C/FQPF2N60C, Rev. A1

FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA600 -- -- V

ΔBVDSS

/ ΔTJ

Breakdown Voltage Temperature

Coefficient ID = 250 μA, Referenced to 25°C -- 0.6 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1μA

VDS = 480 V, TC = 125°C -- -- 10 μA

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA2.0 -- 4.0 V

rDS(on) Static Drain-Source

On-Resistance VGS = 10 V, ID = 1 A -- 3.6 4.7 Ω

gFS Forward Transconductance VDS = 40 V, ID = 1 A (Note 4) -- 5.0 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 180 235 pF

Coss Output Capacitance -- 20 25 pF

Crss Reverse Transfer Capacitance -- 4.3 5.6 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 300 V, ID = 2 A,

RG = 25 Ω

(Note 4, 5)

-- 928 ns

trTurn-On Rise Time -- 25 60 ns

td(off) Turn-Off Delay Time -- 24 58 ns

tfTurn-Off Fall Time -- 28 66 ns

QgTotal Gate Charge VDS = 480 V, ID = 2 A,

VGS = 10 V

(Note 4, 5)

-- 8.5 12 nC

Qgs Gate-Source Charge -- 1.3 -- nC

Qgd Gate-Drain Charge -- 4.1 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 2 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 8 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2 A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0 V, IS = 2 A,

dIF / dt = 100 A/μs (Note 4)

-- 230 -- ns

Qrr Reverse Recovery Charge -- 1.0 -- μC

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 56mH, IAS = 2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

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FQP2N60C/FQPF2N60C, Rev. A1

FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET

10-1 100101

10-2

10-1

100

VGS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

Notes :

1. 250us Pulse Test

2. TC = 25oC

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

246810

10-1

100

101

150oC

25oC

-55oC

Notes :

1. VDS = 40V

2. 250us Pulse Test

ID, Drain Current [A]

VGS, Gate-Source Voltage [V]

10-1 100101

100

150

200

250

300

350

400

450

500

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

Note ;

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

0246810

VDS = 300V

VDS = 120V

VDS = 480V

Note : ID = 2A

VGS, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

012345

VGS = 20V

VGS = 10V

Note : TJ = 25oC

rDS(ON) [Ohm],

Drain-Source On-Resistance

ID, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.4

10-1

100

150oC

Notes :

1. VGS = 0V

2. 250us Pulse Test

25oC

IDR, Reverse Drain Current [A]

VSD, Source-Drain voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

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FQP2N60C/FQPF2N60C, Rev. A1

FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

Notes :

1. VGS = 0 V

2. ID

= 250 uA

BVDSS, (Normalized)

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

? Notes :

1. VGS = 10 V

2. ID = 1 A

rDS(ON), (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

100101102103

10-2

10-1

100

101

100 ms

10 ms

1 ms

100 μs

Operation in This Area

is Limited by R DS(on)

Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

100101102103

10-2

10-1

100

101

100 ms

10 ms

1 ms

100 μs

Operation in This Area

is Limited by R DS(on)

Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

25 50 75 100 125 150

0.0

0.4

0.8

1.2

1.6

2.0

2.4

ID, Drain Current [A]

TC, Case Temperature [oC]

Typical Characteristics (Continued)

Figure 9-1. Maximum Safe Operating Area

for FQP2N60C

Figure 10. Maximum Drain Current

vs Case Temperature

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

Figure 9-2. Maximum Safe Operating Area

for FQPF2N60C

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FQP2N60C/FQPF2N60C, Rev. A1

FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100Notes :

1. Z θJC(t) = 5.5 oC/W Max.

2. D u ty F ac tor, D = t1/t2

3. T JM - T C = PDM * ZθJC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC(t), Thermal Response

t1, S q uare W ave P ulse D ura tion [sec]

Typical Characteristics (Continued)

Figure 11-1. Transient Thermal Response Curve for FQP2N60C

Figure 11-2. Transient Thermal Response Curve for FQPF2N60C

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

Notes :

1. Z θJC(t) = 2.32 oC/W Max.

2. D uty F ac to r, D = t1/t2

3. T JM - TC = PDM * Z θJC (t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC(t), Thermal Response

t1, S q u a re W ave P uls e D uration [se c]

PDM

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FQP2N60C/FQPF2N60C, Rev. A1

FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

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FQP2N60C/FQPF2N60C, Rev. A1

FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

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FQP2N60C/FQPF2N60C, Rev. A1

FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET

Package Dimensions

4.50 ±0.20

9.90 ±0.20

1.52 ±0.10

0.80 ±0.10 2.40 ±0.20

10.00 ±0.20

1.27 ±0.10

ø3.60 ±0.10

(8.70)

2.80 ±0.1015.90 ±0.20

10.08 ±0.30 18.95MAX.

(1.70)

(3.70)(3.00)

(1.46)

(1.00)

(45°)

9.20 ±0.2013.08 ±0.20

1.30 ±0.10

1.30 +0.10



–0.05

0.50 +0.10

–0.05

2.54TYP

[2.54 ±0.20]

2.54TYP

[2.54 ±0.20]

TO-220

Dimensions in Millimeters

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FQP2N60C/FQPF2N60C, Rev. A1

FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET

Package Dimensions (Continued)

(7.00) (0.70)

MAX1.47

(30°)

3.30 ±0.10

15.80 ±0.20

15.87 ±0.20

6.68 ±0.20

9.75 ±0.30

4.70 ±0.20

10.16 ±0.20

(1.00x45°)

2.54 ±0.20

0.80 ±0.10

9.40 ±0.20

2.76 ±0.20

0.35 ±0.10

ø3.18 ±0.10

2.54TYP

[2.54 ±0.20]

2.54TYP

[2.54 ±0.20]

0.50 +0.10

–0.05

TO-220F

Dimensions in Millimeters

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FQP2N60C/FQPF2N60C, Rev. A1

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FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET

Rev. I19

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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE

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SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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reasonably expected to cause the failure of the life support

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Definition of Terms

ACEx™

ActiveArray™

Bottomless™

Build it Now™

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CROSSVOLT™

DOME™

EcoSPARK™

E2CMOS™

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ImpliedDisconnect™

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MICROCOUPLER™

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MicroPak™

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OCX™

OCXPro™

OPTOLOGIC®

OPTOPLANAR™

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POP™

Power247™

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QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

RapidConnect™

µSerDes™

ScalarPump™

SILENT SWITCHER®

SMART START™

SPM™

Stealth™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TCM™

TinyLogic®

TINYOPTO™

TruTranslation™

UHC™

UltraFET®

UniFET™

VCX™

Wire™

Across the board. Around the world.™

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Programmable Active Droop™

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

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