2C3M0120090D Rev. A , 03-2017
Electrical Characteristics (TC=25˚Cunlessotherwisespecied)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 900 V VGS = 0 V, ID=100μA
VGS(th) Gate Threshold Voltage 1.8 2.1 3.5 VVDS = VGS, ID = 3 mA Fig. 11
1.6 VVDS = VGS, ID = 3 mA, TJ = 150ºC
IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 900 V, VGS = 0 V
IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V
RDS(on) Drain-Source On-State Resistance 120 155 mΩVGS = 15 V, ID = 15 A Fig. 4,
5, 6
170 VGS = 15 V, ID = 15 A, TJ = 150ºC
gfs Transconductance 7.7 SVDS= 20 V, IDS= 15 A Fig. 7
6.7 VDS= 20 V, IDS= 15 A, TJ = 150ºC
Ciss Input Capacitance 350
pF VGS = 0 V, VDS = 600 V
f = 1 MHz
VAC = 25 mV
Fig. 17,
18
Coss Output Capacitance 40
Crss Reverse Transfer Capacitance 3
Eoss Coss Stored Energy 9 μJ Fig. 16
EON Turn-On Switching Energy (Body Diode FWD) 170
μJ VDS = 400 V, VGS = -4 V/15 V, ID = 15 A,
RG(ext) =2.5Ω,L=142μH,TJ = 150ºC
Fig. 26,
29
EOFF Turn Off Switching Energy (Body Diode FWD) 25
td(on) Turn-On Delay Time 27
ns
VDD = 400 V, VGS = -4 V/15 V
ID = 15 A, RG(ext)=2.5Ω,
Timing relative to VDS
Inductive load
Fig. 27,
29
trRise Time 10
td(off) Turn-Off Delay Time 25
tfFall Time 8
RG(int) Internal Gate Resistance 16 Ωf = 1 MHz, VAC = 25 mV
Qgs Gate to Source Charge 4.8
nC
VDS = 400 V, VGS = -4 V/15 V
ID = 15 A
Per IEC60747-8-4 pg 21
Fig. 12
Qgd Gate to Drain Charge 5.0
QgTotal Gate Charge 17.3
Reverse Diode Characteristics (TC=25˚Cunlessotherwisespecied)
Symbol Parameter Typ. Max. Unit Test Conditions Note
VSD Diode Forward Voltage
4.8 V VGS = -4 V, ISD = 7.5 A Fig. 8,
9, 10
4.4 V VGS = -4 V, ISD = 7.5 A, TJ = 150 °C
ISContinuous Diode Forward Current 21 A VGS = -4 V Note 1
IS, pulse Diode pulse Current 50 A VGS = -4 V, pulse width tP limited by Tjmax Note 1
trr Reverse Recover time 24 ns
VGS = -4 V, ISD = 7.5 A, VR = 400 V
dif/dt = 900 A/µs, TJ = 150 °C Note 1
Qrr Reverse Recovery Charge 115 nC
Irrm Peak Reverse Recovery Current 6.2 A
Thermal Characteristics
Symbol Parameter Max. Unit Test Conditions Note
RθJC Thermal Resistance from Junction to Case 1.3 °C/W Fig. 21
RθJA Thermal Resistance From Junction to Ambient 40
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode