REVISIONS LTR DESCRIPTION DATE yr-mo-pA) APPROVED A Add "Changes in accordance with NOR 5962-R115- 92-01-27 M. A. Frye 92." B Add software data protection. Increase data 93-07-21 M. A. Frye retention to 20 years, minimum. Add device types 08 through 16. Remove tests tonwe? twHpx? and ESDS requirements from drawing. : THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV B B 8 8 8 B B B 8 SHEET 15 | 16 | 17 | 18 | 19 | 20 | a1 | 22 | 23 REV STATUS REV B B B B 8 8 B B B B 8 B Bt B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 | 11 12 | 13 | 14 PREPARED BY PMIC N/A Kenneth Rice DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 STANDARDIZED CHECKED BY MILITARY Ray Monnin DRAWING srPROvED ow MICROCIRCUIT, MEMORY, DIGITAL, THIS DRAWING IS AVAILABLE Michael A. Frye CMOS 32K X 8 EEPROM, FOR USE BY ALL DEPARTMENTS MONOLITHIC SILICON AND AGENCIES OF THE DRAWING APPROVAL DATE DEPARTMENT OF DEFENSE 88-08-29 SIZE CAGE CODE 5962-88525 AMSC N/A REVISION LEVEL A 67268 8 SHEET 1 OF 23 DESC FORM 193 JUL 91 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. Me 9004708 OOO474a 4h 5962-E176-931. SCOPE 1.1 Scope. This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices. 1.2 Part or Identifying Number (PIN). The complete PIN shall be as shown in the following example: 5962-88525 O11 Xx xX | | __| L___. _ Drawing number Device type Case outline Lead finish (see 1.2.1) (see 1.2.2) (see 1.2.3) 1.2.1 Device type(s). The device type(s) shall identify the circuit function as follows: Access Write Write End of Write Software data Device type Generic number Circuit function time speed mode Indicator Endurance protect 01 See 6.6 (32K X 8 EEPROM) 350 ns 10 ms byte/page DATA potting 10,000 cycles No 02 300 ns 10 ms byte/page DATA polling 10,000 cycles No 03 250 ns 10 ms byte/page DATA polling 10,000 cycles No 04 200 ns 10 ms byte/page DATA polling 10,000 cycles No 05 250 ns 10 ms byte/page DATA polling 100,000 cycles No 06 150 ns 10 ms byte/page DATA polling 10,000 cycles No 07 150 ns 3 ms byte/page DATA polling 10,000 cycles No 08 150 ns 10 ms byte/page DATA polling 100,000 cycles No 09 350 ns 10 ms byte/page DATA polling 10,000 cycles Yes 10 300 ns 10 ms byte/page DATA polling 10,000 cycles Yes 11 250 ns 10 ms byte/page DATA polling 10,000 cycles Yes 12 200 ns 10 ms byte/page DATA polling 10,000 cycles Yes 13 250 ns 10 ms byte/page DATA polling 100,000 cycles Yes 14 150 ns 10 ms byte/page DATA polling 10,000 cycles Yes 15 150 ns 3 ms byte/page DATA polling 10,000 cycles Yes 16 150 ns 10 ms byte/page DATA polling 100,000 cycles Yes 1.2.2 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style U See figure 1 28 Grid array x GDIPI-T28 or CDIP2-T28 28 Dual-in-Line Y Cacc1-N32 32 Rectangular leadless chip carrier Zz COFP4-F28 28 Flat package 1.2.3 Lead finish. The lead finish shall be as specified in MIL-M-38510. Finish Letter "x" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference. 1.3 Absolute maximum ratings. 1/ Supply voltage range (Vo) Storage temperature range Maximum power dissipation (Py) Lead temperature (soldering, 10 seconds) Junction temperature (T)) 2/ Thermal resistance, junction-tocase ().) Input voltage range Wo, Va? Data retention Endurance: Types 01-04, 06, O7, 09-12, 14, 15... Types 05, 08, 13 ,16 -0.3 V de to +6.25 V de ~65C to +150C 1.0 W +300C +175C See MIL-STD-1835 -0.3 V de to +6.25 V de 20 years (minimum) 10,000 cycles/byte (minimum) 100,000 cycles/byte (minimum) Chip clear voltage Wi) a 15.0 V de STANDARDIZED SIZE 5962-88525 MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL SHEET B 2 DESC FORM 193A JUL 91 mm 9004708 0004749 3501.4 Recommended operating conditions. 1/ Supply voltage range (Vi... 6 ee ee ee 44.5 V de to +5.5 V de Case operating temperature range (T.) . 6 2 ee ee ee ee -55C to +125C Input voltage, low range (V))) 2. - - - 2 ee ee ee -0.1 V de to +0.8 V de Input voltage, high range (Vy). ee ee ee es 42.0 V de to V.-, +0.35 V de 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and bulletin. Unless otherwise specified, the following specification, standards, and bulletin of the issue Listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein. SPECIFICATION MILITARY MIL-M-38510 - Microcircuits, General Specification for. STANDARDS MILITARY MIL-STD-883 Test Methods and Procedures for Microelectronics. MIL-STD-1835 - Microcircuit Case Outlines. BULLETIN MILITARY MIL-BUL-103 - List of Standardized Military Drawings (SMD's). (Copies of the specification, standards, and bulletin required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices" and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-M-38510 and herein. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.2 herein and on figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.2.1 Truth table (unprogrammed or erased devices). The truth table for unprogrammed devices shall be as specified on figure 3. 3.2.2.2 Programmed devices. The requirements for supplying programmed devices are not part of this drawing. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full case operating temperature range. 4/ ALL voltages are referenced to ss (ground). 2/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. STANDARDIZED SIZE 5962-88525 MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL SHEET B 3 DESC FORM 193A JUL 91 Me 9004708 0004750 072TABLE I. Electrical performance characteristics. | | | {| wo: ; Test [Symbol | Conditions |Group A { Device | Limits | Unit | | -55 s Te +125C [subgroups | types | sd | | Veg = OV, | | | | | | 45 VSV.. 25.5 V | | | Min | Max = | | lunless otherwise specified 1/ | | | | | | | { | | | | Ia = OE WE | 2,3 ) LL : ! 80 | Supply current |Z {CE =V E=V 1,2, A mA (active) joer | all 1/o'st#0 ma, 24 | | | | | | [Inputs = Vo, = 5.5 V, | | | | | | [f = Wtayay (minimum) | | | | | | { { | | | | ! ize = | 1,2,3 | UL | 3 ! Supply current I CE OE = Vy 124 A mA (TTL standby) cce | all "16: s=0 ak | | | | | | [Inputs = V,, -0.3 V | | | | | | | { | 1 | | Supply current [Icey [CE -0.3 V | 1,2,3 ALL 350 LA (CMOS standby) | | all "So: s = 0 mA, | | [Inputs = V;, to Veg -0.3 V | | | | | | | | | | | | | | | | Input leakage (high) [Iq Vin = 5-5 V | 1,2,3 ALL -10 10 yA | | Input leakage (low) li [Vig = 0.1 1,2,3 | all ~10 10 HA | | | { | | | | | _ | | | | Output Leakage (high) |Ig47 2/ |Voyy = 5-5 V, CE = Viy 1,2,3 AlL | -10 | 10 | BA { | _ | | Output leakage (low) Iouz 2/ [Your = 0-1 , CE = Vay | 1,2,3 ALL -10 | 10 | BA | | | { | { | | | | | | | | Input voltage low IVop | 1,2,3 ALL [-0.1 {08 | V | | [T Input voltage high Vin | | 1,2,3 | ALL 2.0 IVe | v | | | | | [+6.3v | l l | | | 2,3 | Lt ! | 0.45 | Output voltage low Vor To = 2.1 mA, Vin = 2.0 V 1,2, A : v | [Vee =4.5V, Vi, =0.8V | { | | | | | | | | | | ] | Output voltage high Vou [Toy = ~400 WA, Vy, = 2.0 V | 1,2,3 {| ALL | 2.4 | | Vv | Vee F 4.5 V, Vy, = 0-8 V | | | | | | | | | { | _ [ | | | | | | OE high leakage [log Vy, = 13 V | 1,2,3 f all {| -10 { 100 | UA (chip erase) | i i i i i | See footnotes at end of table. STANDARDIZED SIZE 5962-88525 MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL | SHEET B 4 DESC FORM 193A JUL 91 WM 9004708 0004751 TOo aTABLE I. Electrical performance characteristics - Continued. | | | Test | Symbol Conditions |Group A {| Device | Limits Unit -55C S Te. $+125C |subgroups | types | | Veg = Ov, | i { . | | | 4.5 VEVo. 25.5 V | | Min | Max | unless otherwise specified 1/ | | | | | | | | | | | Input capacitance Cy B/ 4 |Viy = OV, Veep = 5.0 V | 4 | ALL I | 1 | pF T, = 425C, f= 1 MHz | | | | | |See 4.3.16 | | | | I | | Output capacitance Iq 3/ 4/7 [Voy = 0 -V, Veg = 5-0 | 4 | ALL | 10 | pF T, = +25C, f = 1 MHz A Read cycle time See figure 4 ns tavav 3/ Address access time ns tavev 3/ chip enable access teLay 5/ . 9,10,11 R nee "3 an ns time VJ, tl, | 04,12 200 | | \__ |06-08, 14-16 150 | | 01-03,05 Output enable access ltorey 5/ 9,10,11 |09-11,13 100 ns time | 04,06,07,08 12,14,15,16 80 Chip enable to output teLox 4/ 9,10,11 ALL 10 ns in low Z a/ Chip disable to tenaz 4/ 9,10,11 |01,02,09,10 80 ns output in high Z 3/ 03-08, 11-16 60 | Output enable to Ito 4/ 9,10,11 ALL 10 ns output in low 2 | 5/ | Output disable to Itonez 4/ | 9,10,11 |01,02,09,10 80 ns output in high Z \ 5/ 03-08, 11-16 60 Output hold from | taxax 4/ | 9,10,11 ALL 0 ns address change | 5/ | { | | | See footnotes at end of table. STANDARDIZED SIZE 5962-88525 MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL | SHEET B 5 DESC FORM 193A JUL 91 Me 9004708 ooo87se 445TABLE I. Electrical performance characteristics - Continued. | | | | | Test [Symbol =| Conditions |Group A | Device | Limits Unit | | -55C ST. $125C [subgroups | types | i | | Veg = OV, | | | | | | 4.5 VEVe- 55.5 V | | | Min | Max | | junless otherwise specified 1/ | | | | | | | | | | | 01-06, | | | Write cycle time ltynwed |See figure 5 or 7 [ 9,10,11 [{ 08-14, | ].10 | ms teHELI as applicable 16 | 5/ | | 07,15 3 Address set-up time [tyye, 5S/ [See figures 5, 6, or 7 9,10,11 ALL 20 ns It ayo [| as applicable Address hold time terax 3/ 9,10,11 ALL | 150 | { ns | | Write set-up time [tyre 3/ | 9,10,11 ALL 0 | | ns TELWL | | - Write hold time tenwH S/ | 9,10,11 ALL 0 | [ ns WHEH | | OE set-up time tone, | | 9,410,114 ALL | 20 ns Tou. 2/ | | OE hold time teHo. | | 9,10,11 ALL | 20 ns | | | _ | | | WE pulse width teLen | 9,10,11 | All | .150 1 us t | | | | er | | | I | ++ Data set-up time toven | 9,10,11 | all | 50 | ns t 3/ | | | | DVWH | | | | | | | | | | | | Delay to next write |toyy, 4/ | | 9,10,17 | alt | | 10 ys tover 2/ | | | | | i | | | | | | | | rd Data hold time FEHDX 5) | | 9,10,11 | ALL | 10 | ns WHDX = | | | | | | | ro 4 Byte load cycle tun |S*s figure 5 or 7 | 9,10,11 | AlL | .20 | 149 | Us | WAG, as applicable | | | | | | | { ! | | | See footnotes at end of table. STANDARDIZED SIZE 5962-88525 MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL | SHEET B 6 DESC FORM 193A JUL 91 Me 9004708 0004753 461TABLE I. Electrical performance characteristics - Continued. | | | | ; Test |Symbot | Conditions |Group A | Device | Limits } Unit | | aaa = Te =+125C |subgroups | types | | | av, | | | | | 4.5 vss Veg 3 5-5 -V | | | Min | Max | unless otherwise specified 1/ | | | | | | | | { | | i | | | | Last byte loaded to |EHEL |See figure 5 or 6 | 9,10,17 | Atk | { 650 | us data polling Iteye, 3/ | as applicable { | | | | { | { | | | | _ | | | | | | CE setup time Iteryt 3/ [See figure & | 9,10,11 ALL | 5 | Hs 5/ | | | | | Output set-up time | Foviw | 9,10,11 ALL ! 5 ! ) us | i | | | CE hold time tynen 2/ 9,10,11 | ALL | 5 us = a7 | | OE hold time |tUHOH | 9,10,11 ALL 5 | us | | | | | | High voltage Vu 3/ 9,10,11 ALL | 12 13 } Vv a/ | Chip erase Fun | | 9,10,11 ALL i270 | ms _ | | | | | WE pulse width for tyr wH12/ | 9,10,11 ALL 10 | { ms chip erase | { | 1/ DC and read mode. 2/ Connect all address inputs and OE to Vin and measure Ig, > and louz with the output under test connected to Vo 7- 3/ ALL pins not being tested are to be open. , 4/ Tested initially and after any design or process changes that affect that parameter, and therefore shall be guaranteed to the Limits specified in table I. 5/ Tested by application of specified timing signals and conditions, including: Equivalent ac test conditions: Devices: ALL. Output load: 1 TTL gate and c = 100 pF (minimum) or equivalent circuit. Input rise and fall times = 10 ns. Input pulse levels: 0.4 V and 2.4 V. Timing measurements reference levels: Inputs: 1 V and 2 V. Outputs: 0.8 V and 2 V. 6/ During a page write operation the cycle time defined by ty 4, and ty > shall not be less than 1 ps. STANDARDIZED SIZE 5962-88525 MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL | SHEET B 7 DESC FORM 193A JUL 91 Me 9004708 CODN7S4 715Case U QeOe aA ' f=. 008 @) 008 @ @ La | SEE LEADS @) G) @2) @3) 4,12,18,AND 26 @ @5) | ptt t.012 O@OO &- | J | I | 075 "ALL LEADS vy 012 4 CORNERS PIN 1 INDEX so10 | ~~. ahs, Lots t.002 650 +.010 1 L pem-.51 *.010 om | . 180 .005 NOTES: Inches ma 1. Dimensions are in inches. -002 0.05 2. Metric equivalents are given for general information only. .005 0.13 -008 0.20 -010 0.25 -012 0.30 .050 1.27 - 067 1.70 075 1.90 - 100 2.54 -180 4.57 .551 14.00 -650 16.51 FIGURE 1. Case outline. STANDARDIZED SIZE 5962-88525 MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL | SHEET B 8 DESC FORM 193A JUL 91 mm 9004708 ocooN7ss bSh aDevice types Case_outlines u, Xx, 2 Y Terminal numbers Terminal symbols | 1 [Aas NC | 2 [Aya Any, 3 Ar 12 | 4 Ly Az | 5 [Ag Ae | | 6 [A, Ag | | 7 |Az fA, | | 8 JA5 |Ag | | 9 [Ay [Ap { | 10 [A [Aq | | 11 1170, JA | 12 | 1/0, ne | 13 [1/05 [1/0 | 14 Veg | 1/0, 15 |1783 j1/05 | 16 |1/0, [Veg | 17 [1/05 [NC | 18 | 1/0, [Is 19 [1/07 | 1/0; 20 |cE 1/0, 21 Ang 1/0, 22 OE 1/07 24 'g Aro 25 Ag OE 26 Aa Ne 27 WE Aa 28 Yee Ao | 29 |---| Ag | 30 --- Ang 31 --- WE 32 |--- [Yee | FIGURE 2. Terminal connections. STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 SIZE 5962-88525 REVISION LEVEL B SHEET 9 DESC FORM 193A JUL 91 Mm 9004708 ooo475b S40Mode CE OE WE I/o Device type Read Vie Viv Von Pour ALL Standby Voy x x High Z ALL Chip clear Von Vu VoL Din = Yin ALL Byte write Viv Vow Vee Data in ALL Write inhibit x Vee x High 2/D out ALL | Write inhibit | X | X | Vin High Z/D out ALL X = Don't care state. FIGURE 3. Truth table for unprogrammed devices. STANDARDIZED MILITARY DRAWING SIZE 5962-88525 DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL B SHEET 10 DESC FORM 193A JUL 91 Mm 9004708 coos?S? 4c?- tAVAV | ADORESS Ay xX NEXT ADDRESS X rn Lg tavoy e e teL ay _=> teLox e~ torox toLov tenaz - touoz \ e* a oj *axox ADORESSES CE 0E pata HIGH _Z foata varro i DATA vaLrD 5 atm tavov | FIGURE 4. Read cycle timing waveform. STANDARDIZED SIZE 5962-88525 MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL SHEET B ll DESC FORM 193A JUL 91 me 9004708 o004758 J4b3 =DATA _ t | \ / 1 / \_/ teHOLon hae . 1 ADDRESSES) VALIO x DON'T CARE . x [une AVEL a4 teLaxbee- jeep EHE L om __oF t WE t = 7 pf Xf t ELEH <_____ boven x btoverm| DATA BIT 7 OR ALL BITS FIGURE 5. CE controlled byte write programming waveform. STANDARDIZED SIZE 5962-88525 MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL SHEET B 12 DESC FORM 1934 JUL 91 Mm 9004708 0004759 2TTDATA ae \ CELL eee ~~ WE / HLH van e| * OVHH o_o} - DATA IN fee *HHEH tyHWL 1 ae tuHOX ~= tovaLeny BIT 7 OR ALL BITS FIGURE 6. WE controlled byte write programming waveform. tr BYTE WRITE _> POLLING _ t a Y_/ | / \_/ Le oa tuHoL-e} fe ft ADDRESSES VALID x DON'T CARE q Janet A viiL ~om tueaxbee- jaeg- WHEL om f \|/\ sf 1 (pata In) STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 SIZE 5962-88525 REVISION LEVEL B SHEET 13 DESC FORM 193A JUL 91 me 9004708 Guo47b0 TLL aPAGE LOAD eet NG <j OHNE A. F roses VALID = YX vat 0 X OX vata X DON'T CARE Ke i VY NY nae HHHOL tavito| uae iL WH on4 aL AX ne HWE 1 baHDX HIGH Z DATA DATA rors, / DATA DATA BIT 7 OR toveL ALL ae tovuL FIGURE 7. Page write programming waveform. STANDARDIZED SIZE 5962-88525 MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL SHEET B 14 DESC FORM 193A JUL 91 me 9004708 OOO47b1 354tn > Timer chip clear waveform. ADDRESS x DON'T CARE BD Vin ce "ie fo ~ tELWL tuHeH = oe Yiu K Vou -_ a tHLWH1 l a WE STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 SIZE 5962-88525 REVISION LEVEL B SHEET I5 DESC FORM 193A JUL 91 Me 9004708 ooou7b2e 494WRITE DATA AA TO ADDRESS 5555 WRITE DATA 55 TO ADDRESS 2AAA WRITE DATA 80 TO ADDRESS 5555 WRITE DATA AA TO ADDRESS 5555 WRITE DATA 55 TO ADDRESS 2AAA WRITE DATA 10 TO ADDRESS 5555 NOTES: 1. Software chip clear timings are referenced to WE or CE inputs, whichever is last to go low, and the WE or CE inputs, whichever is first to go high. 2. The command sequence must conform to the page write timing. FIGURE 9. Software chip clear algorithm (device types 09-16). B STANDARDIZED SIZE 5962-88525 MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL SHEET 16 DESC FORM 193A JUL 91 Me 9004708 oo047b3 720WRITE DATA AA TO ADDRESS 5555 WRITE DATA 55 TO ADORESS 2AAA WRITE DATA AO TO ADDRESS 5555 WRITE DATA XX TO ANY ADORESS WRITE LAST BYTE TO LAST ADDRESS AFTER tWC RE-ENTERS DATA PROTECTED STATE NOTES: go high. Set SDP byte/page load enable 1. Software data protection timings are referenced to the WE or CE inputs, whichever is last to go low, and the WE or CE inputs, whichever is first to 2. The command sequence and subsequent data must conform to page write timing. FIGURE 10. Set software data protect algorithm (device types 09-16). STANDARDIZED MILITARY DRAWING SIZE 5962-88525 DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL B SHEET 17 DESC FORM 193A JUL 91 mm 9004708 GOOu7b4 bb? mlWRITE DATA AA TO ADDRESS 5555 WRITE DATA 55 Ta ADDRESS 2AAA WRITE DATA 80 TO ADORESS 5555 WRITE DATA AA TO ADDRESS 5555 WRITE DATA 55 TO ADDRESS 2AAA WRITE DATA 20 TO ADDRESS 5555 NOTES: first to go high. SDP reset 1. Reset software data protection timings are referenced to the WE or CE inputs, whichever is last to go low, and the WE or CE inputs, whichever is 2. The command sequence and subsequent data must conform to page write timing. B FIGURE 11. Reset software data protect algorithm(device types 09-16). STANDARDIZED SIZE 5962-88525 MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL SHEET 18 DESC FORM 193A JUL 91 MM 5004708 Goo47b5 ST33.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table I. . 3.5 Marking. Marking shall be in accordance with MIL-STD-883 (see 3.1 herein). The part shall be marked with the PIN Listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked as Listed in MIL-BUL-103 (see 6.6 herein). 3.6 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-BUL-103 (see 6.6 herein). The certificate of compliance submitted to DESC-EC prior to Listing as an approved source of supply shall affirm that the manufacturer's product meets the requirements of MIL-STD-883 (see 3.1 herein) and the requirements herein. 3.7 Certificate of conformance. A certificate of conformance as required in MIL-STD-883 (see 3.1 herein) shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change. Notification of change to DESC-EC shall be required in accordance with MIL-STD-883 (see 3.1 herein). 3.9 Verification and review. DESC, DESC's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Processing EEPROMS. ALL testing requirements and quality assurance provisions herein shall be satisfied by the manufacturer prior to delivery. 3.10.1 Erasure of EEPROMS. When specified, devices shall be erased in accordance with the procedures and characteristics specified in 4.4.3. Devices shall be shipped in the erased (logic 1's) and verified state unless otherwise specified. 3.10.2 Programmability of EEPROMS. When specified, devices shall be programmed to the specified pattern using the procedures and characteristics specified in 4.4.2. Software data protect procedures shall be as specified in 4.4.5. 3.10.3 Verification of erasure or programmability of EEPROMS. When specified, devices shall be verified as either programmed to the specified pattern or erased. As a minimum, verification shall consist of reading the device per the procedures and characteristics specified in 4.4.4. Any bit that does not verify to be in the proper state shall constitute a device failure, and shall be removed from the Lot. 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sempling and inspection procedures shall be in accordance with section 4 of MIL-M-38510 to the extent specified in MIL-STD-883 (see 3.1 herein). 4.2 Screening. Screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. The following additional criteria shall apply: a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition D or F. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of MIL-STD-883. (2) Ty = +125C, minimum. (3) Devices shall be burned-in containing a checkerboard pattern or equivalent. b. Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter tests prior to burn-in are optional at the discretion of the manufacturer. STANDARDIZED SIZE 5962-88525 MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL SHEET B 19 DESC FORM 193A JUL 91 Me 9004708 OO0047bb 43STc. An endurance/data retention test prior to burn-in, in accordance with method 1033 of MIL-STD-883, shall be included as part of the screening procedure with the following conditions: : (1) Cycling may be block, byte, or page at equipment room ambient temperature and shall cycle all bytes for a minimum of 10,000 cycles for devices 01-04, 06,07, 09-12, 14,15 and a minimum of 50,000 cycles for device 05,08,13, and 16. (2) After cycling, perform a high temperature unbiased bake for 72 hours at +150C (minimum). The storage time may be accelerated by using higher temperature in accordance with the Arrhenius Relationship: Ag =e Ap = acceleration factor (unitless quantity) = ty/ty T = temperature in Kelvin Ci.e., tat 273) t, = time (hrs) at temperature Ty ty = time (hrs) at temperature T. _ K = Boltzmanns constant = 8.62 x 10 of 0.6 ev. 5 ev/K using an apparent activation energy (Ey) The maximum storage temperature shall not exceed +200C for packaged devices or +300C for unassembled devices. (3) Read the data retention pattern and test using subgroups 1, 7, and 9 (minimum, e.g., high temperature equivalent subgroups 2, 8A, and 10 may be used) after cycling and bake, prior to burn-in. Devices having bits not in the proper state after storage shall constitute a device failure. 4.3 Quality conformance inspection. Quality conformance inspection shall be in accordance with method 5005 of MIL-STD-883 including groups A, 8, C, and D inspections. The following additional criteria shall apply. 4.3.1 Group A_inspection. a. Tests shall be as specified in table Il herein. b. Subgroups 5 and 6 in table I, method 5005 of MIL~STD-883 shall be omitted. c. Subgroup 4 CC, and C, measurements) shall be measured only for the initial test and after process or design changes which may affect input capacitance. d. Subgroups 7 and 8 shall include verification of the truth table. 4.3.2 Group C_ inspections. Group C inspection shal! be in accordance with table ILI of method 5005 of MIL-STD-883 and as follows: a. End-point electrical parameters shall be as specified in table II herein. b. ALL devices requiring end-point electrical testing shall be programmed with a checkerboard or equivalent alternating bit pattern. c. Steady-state life test conditions, method 1005 of MIL-STD-883. (1) Test condition D or F using the circuit submitted with the certificate of compliance (see 3.6 herein). (2) T, = #125C, minimum. (3) Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. STANDARDIZED SIZE 5962-88525 MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL SHEET B 20 DESC FORM 193A JUL 91 Me 9004708 GOOu?b? 376d. An endurance test, in accordance with method 1033 of MIL-STD-883, shall be added to group C1 inspection prior to performing the steady-state Life test (see 4.3.2c) and extended data retention (see 4.3.2e). Cycling may be block, byte, or page from devices passing group A after the completion of the requirements of 4.2 herein. Initially, two groups of devices shall be formed, cell 1 and cell 2. The following conditions shall be met: (1) Cell 1 shall be cycled at -55C and cell 2 shall be cycled at +125C for a minimum of 10,000 cycles for device types 01-04,06,07,09-12,14,15 and 100,000 cycles for device types 05,08,13, and 16. (2) Perform group A subgroups 1, 7, and 9 after cycling. Form two new cells (cells 3 and 4) for steady-state Life and extended data retention. Cell 3 for steady-state life test consists of one-half of the devices from cell 1 and one-half of the devices from cell 2. Cell 4 for extended data retention consists of the remaining devices from cells 1 and 2. (3) The sample plans for cell 1, cell 2, cell 3, and cell 4 shall individually be the same as for group C1, as specified in method 5005 of MIL-STD-883. e. Extended data retention shall consist of: (1) ALL devices shall be programmed with a charge on all memory cells in each device, such that the cell Will read opposite the state that the cell would read in its equilibrium state (e.g., worst case pattern, see 4.2a(3)). (2) Unbiased bake for 1000 hours (minimum) at +150C (minimum). The unbiased bake time may be accelerated by using higher temperature in accordance with the Arrhenius Relationship: Ar =e Ap = acceleration factor (unitless quantity) = tafts T = temperature in Kelvin (i.e., t4+ 273) ty = time (hrs) at temperature Ty t. = time (hrs) at temperature T. 5 K = Boltzmanns constant = 8.62 x 10 eV/K using an apparent activation energy (E,) of 0.6 eV, The maximum storage temperature shall not exceed +200C for packaged devices or +300C for unassembled devices. (3) Read the pattern after bake and perform endpoint electrical tests for table Il herein for group C. 4.3.3 Groups D_ inspections. Group D inspection shall be in accordance with table IV of method 5005 of MIL-STD-883 and as follows: a. End-point electrical parameters shall be as specified in table II herein. b. ALL devices requiring end-point electrical testing shall be programmed with a checkerboard or equivalent alternating bit pattern. STANDARDIZED SIZE 5962-88525 MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL SHEET B 21 DESC FORM 193A JUL 91 ME 9004708 oo047b8 202TABLE II. Electrical test requirements. MIL-STD-883 test requirements Subgroups Cin accordance with method 5005, tabie 1) Interim electrical parameters 1,7,9, or 2,8 (4+125C),10 (method 5004) Final electrical test parameters 1%,2,35,7%,8,9,10,11 (method 5004) Group A test requirements 1,2,3,4kk,7,8,9,10,11 (method 5005) Groups C and D end-point 1,2,3,7,8,9,10,11 electrical parameters (method 5005) 1. (*) Indicates PDA applies to subgroups 1 and 7. 2. Any or all subgroups may be combined when using multifunction testers. 3. Subgroup 7 and & shall consist of writing and reading the data pattern specified in accordance with the Limits of table I subgroups 9, 10, and 11. 4. For all electrical tests, the device shall be programmed to the data pattern specified. 5. (kk) Indicates that subgroup 4 will only be performed during initial qualification and after design or process changes (see 4.3.1c). 4.4 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables of method 5005 of MIL-STD-883 and as follows. 4.4.1 Voltage and current. ALL voltages given are referenced to the microcircuit Veg terminal. Currents given are conventional current and positive when flowing into the referenced terminal. 4.4.2 Programming procedure. The following procedure shall be followed when programming (Write) is performed. The waveforms and timing relationships shown on figure 5 (in accordance with appropriate device type) and the conditions specified in table I shall be adhered to. Information is introduced by selectively programming a TTL Low or TTL high on each 1/0 of the address desired. Functionality shall be verified at all temperatures (group A subgroups 7 and 8) by programming all bytes of each device and verifying the pattern used. 4.4.3 Erasing procedure. There are two forms of erasure, chip and byte, whereby all bits or the address selected Will be erased to a TTL high. a. Chip erase is performed in accordance with the waveforms and timing relationships shown on figure 8 Cin accordance with appropriate device type) and the conditions specified in table 1. b. Byte erase is performed in accordance with the waveforms and timing relationships shown on figures 5, 6, and 7 Cin accordance with appropriate device type) and the conditions specified in table I. 4.4.4 Read mode operation. The waveforms and timing relationships shown on figure 4 and the conditions specified in table I shall be applied when reading the device. Pattern verification utilizes the read mode. STANDARDIZED SIZE 5962-88525 MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL SHEET B ee : 22 DESC FORM 193A JUL 91 Me 9004708 OOO4769 1494.4.5 Software data protection. Device types 09-16 software data protection offers a method of preventing inadvertent writes (see figure 9). The instructions, waveforms, and timing relationships shown on figures 4, 5, 6, 7, 10, and 11, and the conditions specified in table I shall apply (see 3.10.2). 4.4.5.1 Set software data protection. Device types 09-16 are placed in protected state by writing a series of instructions (see figure 10) to the device. Once protected, writing to the device may only be performed by executing the same sequence of instructions appended with either a byte write operation or page write operation. The waveforms and timing relationships shown on figures 5, 6, and 7 and the test conditions and Limits specified in table I shall apply. 4.4.5.2 Reset software data protection. Device types 09-16 protection feature is reset by writing a series of instructions (see figure 11) to the device. The waveforms and timing relationships shown on figures 5, 6, and 7 and the test conditions and limits specified in table I shall apply. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-M-38510. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for original equipment manufacturer application. When a military specification exists and the product covered by this drawing has been qualified for Listing on QPL-38510, the device specified herein will be inactivated and will not be used for new design. The QPL-38510 product shall be the preferred item for all applications. 6.2 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor-prepared specification or drawing. 6.3 Configuration control of SMD's. ALL proposed changes to existing SMD's will be coordinated with the users of record for the individual documents. This coordination will be accomplished in accordance with MIL-STD-481 using DD Form 1693, Engineering Change Proposal (Short Form). 6.4 Record of users. Military and industrial users shall inform Defense Electronics Supply Center when a system application requires configuration control and the applicable SMD. DESC will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronics devices (FSC 5962) should contact DESC-EC, telephone (513) 296-6047. 6.5 Comments. Comments on this drawing should be directed to DESC-EC, Dayton, Ohio 45444, or telephone (513) 296-5377. 6.6 Approved sources of supply. Approved sources of supply are Listed in MIL-BUL-103. The vendors Listed in MIL-BUL-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by DESC~EC. STANDARDIZED SIZE 5962-88525 MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL SHEET B 23 DESC FORM 193A JUL 91 ME 9004708 ooo4u770 460