Power Management & Multimarket
SiC
Silicon Carbide Diode
Final Datasheet
Rev. 2.2, 2012-12-10
5th Generation thinQ!TM
650V SiC Schottky Diode
IDH02G65C5
1) J-STD20 and JESD22
2) All devices tested under avalanche conditions for a time periode of 10ms
Final Data Sheet 2 Rev. 2.2, 2012-12-10
1 Description
Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target applications
Breakdown voltage tested at 4.5 mA2)
Optimized for high temperature operation
Benefits
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Applications
Switch mode power supply
Power factor correction
Solar inverter
Uninterruptible power supply
Table 1 Key Performance Parameters
Parameter Value Unit
VDC 650 V
QC; VR=400V 4 nC
EC; VR=400V 0.8 µJ
IF @ TC < 155°C 2 A
Table 2 Pin Definition
Pin 1 Pin 2 Pin 3
C A n.a.
Type / ordering Code Package Marking Related links
IDH02G65C5 PG-TO220-2 D0265C5 www.infineon.com/sic
IDH02G65C55th Generation thinQ!™ SiC Schottk
y
Diode
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
Schottky Barrier diodes. The Infineon proprietary diffusion soldering process,
already introduced with G3 is now combined with a new, more compact design and
thin-wafer technology. The result is a new family of products showing improved
efficiency over all load conditions, resulting from both the improved thermal
characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
requirements in this voltage range. 1 2
5
th Generation thinQ!TM SiC Schottky Diode
IDH02G65C5
Table of contents
Final Data Sheet 3 Rev. 2.2, 2012-12-10
Table of Contents
1Description .......................................................................................................................................... 2
2Maximum ratings ................................................................................................................................ 4
3Thermal characteristics ..................................................................................................................... 4
4Electrical characteristics ................................................................................................................... 5
5Electrical characteristics diagrams .................................................................................................. 6
6Simplified Losses Model ................................................................................................................... 8
7Package outlines ................................................................................................................................ 9
8Revision History ............................................................................................................................... 10
5
th Generation thinQ!TM SiC Schottky Diode
IDH02G65C5
Maximum ratings
Final Data Sheet 4 Rev. 2.2, 2012-12-10
2 Maximum ratings
Table 3 Maximum ratings
Parameter Symbol Values Unit Note/Test Condition
Min. Typ. Max.
Continuous forward current IF – – 2
A
TC < 155°C, D=1
Surge non-repetitive forward current,
sine halfwave
IF,SM – –
23 TC = 25°C, tp=10 ms
– –
22 TC = 150°C, tp=10 ms
Non-repetitive peak forward current IF,max – –
138 TC = 25°C, tp=10 µs
i²t value ∫ i²dt – –
2.6 A²s TC = 25°C, tp=10 ms
– –
2.5 TC = 150°C, tp=10 ms
Repetitive peak reverse voltage VRRM – –
650 V Tj = 25°C
Diode dv/dt ruggedness dv/dt – –
100 V/ns VR=0..480 V
Power dissipation Ptot – –
36 W TC = 25°C
Operating and storage temperature Tj;Tstg -55 – 175 °C
Mounting torque – –
70 Ncm M3 screws
3 Thermal characteristics
Table 4 Thermal characteristics TO-220-2
Parameter Symbol Values Unit Note/Test Condition
Min. Typ. Max.
Thermal resistance, junction-case RthJC – 2.6 4.2
K/W
Thermal resistance, junction-
ambient
RthJA – –
62 leaded
Soldering temperature,
wavesoldering only allowed at leads
Tsold – –
260 °C 1.6mm (0.063 in.) from
case for 10 s
5
th Generation thinQ!TM SiC Schottky Diode
IDH02G65C5
Electrical characteristics
Final Data Sheet 5 Rev. 2.2, 2012-12-10
4 Electrical characteristics
Table 5 Static characteristics
Parameter Symbol Values Unit Note/Test Condition
Min. Typ. Max.
DC blocking voltage VDC 650 – –
V
IR= 0.035 mA, Tj=25°C
Diode forward voltage VF – 1.5 1.7 IF= 2 A, Tj=25°C
– 1.8 2.1 IF= 2 A, Tj=150°C
Reverse current IR – 0.1 35
µA
VR=650 V, Tj=25°C
– 0.02 12 VR=600 V, Tj=25°C
– 0.4 240 VR=650 V, Tj=150°C
Table 6 AC characteristics
Parameter Symbol Values Unit Note/Test Condition
Min. Typ. Max.
Total capacitive charge Qc – 4
nC VR=400 V, di/dt=200A/µs,
IF≤IF,MAX, Tj=150°C
Total Capacitance C – 70 –
pF
VR=1 V, f=1 MHz
– 9.1 – VR=300 V, f=1 MHz
– 8.9 – VR=600 V, f=1 MHz
5
th Generation thinQ!TM SiC Schottky Diode
IDH02G65C5
Electrical characteristics diagrams
Final Data Sheet 6 Rev. 2.2, 2012-12-10
5 Electrical characteristics diagrams
Table 7
Power dissipation Maximal diode forward current
0
5
10
15
20
25
30
35
40
25 50 75 100 125 150 175
P
tot
[W]
T
C
[°C]
0
5
10
15
20
25
30
25 50 75 100 125 150 175
I
F
[A]
T
C
[°C]
0.1
0.3
0.5
0.7
1
Ptot=f(TC); RthJC,max IF=f(TC); RthJC,max; Tj≤175°C; parameter D=duty cycle
Table 8
Typical for ward characteristics Typical for ward characteristics in sur ge current
0
0.5
1
1.5
2
2.5
3
3.5
4
00.511.522.53
IF[A]
VF[V]
-55°C
25°C
100°C
150°C
175°C
0
2
4
6
8
10
12
14
16
18
20
0123456
I
F
[A]
V
F
[V]
-55°C
25°C
100°C
150°C
175°C
IF=f(VF); tp=200 µs; parameter: Tj IF=f(VF); tp=200 µs; parameter: Tj
5
th Generation thinQ!TM SiC Schottky Diode
IDH02G65C5
Electrical characteristics diagrams
Final Data Sheet 7 Rev. 2.2, 2012-12-10
Table 9
Typ. capacitance charge vs. current slope1) Typ. reverse current vs. reverse voltage
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
100 300 500 700 900
Q
C
[nC]
dI
F
/dt [A/µs]
1.E-9
1.E-8
1.E-7
1.E-6
1.E-5
100 200 300 400 500 600
I
R
[A]
V
R
[V]
QC=f(dIF/dt); Tj=150°C; VR=400 V; IF≤IF,max IR=f(VR); parameter: Tj
1) Only capacitive charge, guaranteed by design.
Table 10
Max. transient thermal impedance Typ. capacitance vs. reverse v oltage
0.01
0.1
1
10
1.E-06 1.E-03 1.E+00
Z
th,jc
[K/W]
t
p
[s]
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
0
10
20
30
40
50
60
70
80
90
0 1 10 100 1000
C[pF]
V
R
[V]
Zth,jc=f(tP); parameter: D=tP/T C=f(VR); Tj=25°C; f=1 MHz
-55°C
175°C
150°C
25°C
100°C
5
th Generation thinQ!TM SiC Schottky Diode
IDH02G65C5
Electrical characteristics diagrams
Final Data Sheet 8 Rev. 2.2, 2012-12-10
Table 11
Typ. capacitance stored energy
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0 200 400 600
EC[µJ]
VR[V]
EC=f(VR)
6 Simplified Forward Characteristics Model
Table 12
Equivalent forward current curve Mathematical Equation
I
F
[A]
V
F
[V]
VF=f(IF) Tj in °C; -55°C < Tj < 175°C; IF < 4 A
1/Rdiff
Vth
0.23210.426106.42
V 04.1001.0
4-
2
6- jjjDIFF
jjTH
TTTR
TTV
FDIFFTHF IRVV
5
th Generation thinQ!TM SiC Schottky Diode
IDH02G65C5
Package outlines
Final Data Sheet 9 Rev. 2.2, 2012-12-10
7 Package outlines
Figure 1 Outlines TO-220, dimensions in mm/inches
5
th Generation thinQ!TM SiC Schottky Diode
IDH02G65C5
Revision History
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Edition 2012-12-10
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
Final Data Sheet 10 Rev. 2.2, 2012-12-10
8 Revision History
5
th
Generation thinQ!
TM
SiC Schottky Diode
Revision History : 2012-1 2-10, Rev. 2.2
Previous Revision:
Revision Subjects (major changes since last version)
2.0 Release of the final datasheet.
2.1 Reverse current values, maximum diode forward voltage.
2.2 Reverse current values, tested avalanche current, simplified calculation model
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