StrongIRFETTM IRF200B211 HEXFET(R) Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies DC/DC and AC/DC converters DC/AC Inverters S 170m 12A D Drain Standard Pack Form Quantity Tube 50 S Source Orderable Part Number IRF200B211 14 500 ID = 7.2A 450 12 400 350 T J = 125C 300 250 200 T J = 25C 150 10 8 6 4 2 100 0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 max TO-220AB IRF200B211 ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m ) TO-220 135m S D G G Gate IRF200B211 RDS(on) typ. ID (Silicon Limited) Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free*RoHS Compliant, Halogen-Free Package Type 200V G Base part number VDSS D www.irf.com (c) 2015 International Rectifier 25 50 75 100 125 150 175 T C , Case Temperature (C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback March 31, 2015 IRF200B211 Absolute Maximum Rating Symbol ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting Torque, 6-32 or M3 Screw Max. 12 9.0 34 80 0.53 20 Units A W W/C V -55 to + 175 C 300 10 lbf*in (1.1 N*m) Avalanche Characteristics EAS (Thermally limited) EAS (Thermally limited) EAS (tested) IAR EAR Single Pulse Avalanche Energy Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy 88 See Fig 15, 16, 23a, 23b Thermal Resistance Symbol Parameter Junction-to-Case RJC Case-to-Sink, Flat Greased Surface RCS Junction-to-Ambient RJA Static @ TJ = 25C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance RDS(on) VGS(th) Gate Threshold Voltage IDSS IGSS RG Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance Typ. --- 0.50 --- Min. 200 --- --- 3.0 --- --- --- --- --- Typ. Max. --- --- 0.21 --- 135 170 --- 4.9 --- 20 --- 250 --- 100 --- -100 2.7 --- mJ 72 98 Units V V/C m V A nA Max. 1.88 --- 62 A mJ Units C/W Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 7.2A VDS = VGS, ID = 50A VDS = 200V, VGS = 0V VDS = 160V,VGS = 0V,TJ =125C VGS = 20V VGS = -20V Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 3.4mH, RG = 50, IAS = 7.2A, VGS =10V. ISD 7.2A, di/dt 1184A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90C. Limited by TJmax, starting TJ = 25C, L = 1.0mH, RG = 50, IAS = 11.5A, VGS =10V. This value determined from sample failure population, starting TJ = 25C, L= 3.4mH, RG = 50, IAS = 7.2A, VGS =10V. 2 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback March 31, 2015 IRF200B211 Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg- Qgd) Turn-On Delay Time Rise Time Min. 13 --- --- --- --- --- --- Typ. --- 15.3 5.1 5.6 10.2 6.5 9.5 td(off) tf Ciss Coss Crss Turn-Off Delay Time --- 11.3 Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) --- --- --- --- 6.5 790 62 21 --- 66 --- VGS = 0V, VDS = 0V to 160V --- 83 --- VGS = 0V, VDS = 0V to 160V Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units --- --- 12 --- --- 34 Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage --- dv/dt Peak Diode Recovery dv/dt --- 32.5 --- trr Reverse Recovery Time --- 68 --- Qrr Reverse Recovery Charge IRRM Reverse Recovery Current --- --- --- --- 83 195 280 4.3 --- --- --- --- Coss eff.(ER) Coss eff.(TR) Max. Units Conditions --- S VDS = 50V, ID = 7.2A 23 ID = 7.2A --- VDS = 100V nC --- VGS = 10V --- --- VDD = 130V --- ID = 7.2A ns --- RG= 2.7 VGS = 10V --- --- --- --- pF VGS = 0V VDS = 50V = 1.0MHz, See Fig.TBD Diode Characteristics Symbol IS ISM 3 www.irf.com (c) 2015 International Rectifier A 1.3 V D G S TJ = 25C, IS = 7.2A,VGS = 0V V/ns TJ =175C,IS = 7.2A,VDS = 200V ns TJ = 25C VDD = 100V TJ = 125C IF = 7.2A, TJ = 25C di/dt = 100A/s nC TJ = 125C A TJ = 25C Submit Datasheet Feedback March 31, 2015 IRF200B211 100 100 10 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 7.0V 6.0V 5.5V 5.25V 5.0V 1 0.1 5.0V 10 BOTTOM VGS 15V 10V 7.0V 6.0V 5.5V 5.25V 5.0V 5.0V 1 60s PULSE WIDTH 60s PULSE WIDTH Tj = 175C Tj = 25C 0.01 0.1 1 0.1 10 100 0.1 V DS, Drain-to-Source Voltage (V) RDS(on) , Drain-to-Source On Resistance (Normalized) 3.0 10 1 0.1 0.01 ID = 7.2A VGS = 10V 2.5 2.0 1.5 1.0 0.5 0.0 2 3 4 5 6 7 8 -60 -20 VGS, Gate-to-Source Voltage (V) Crss = C gd Coss = Cds + Cgd C, Capacitance (pF) 100 140 180 14 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Ciss 100 60 Fig 6. Normalized On-Resistance vs. Temperature Fig 5. Typical Transfer Characteristics 1000 20 T J , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) Coss Crss 10 ID = 7.2A 12 VDS= 160V VDS= 100V 10 VDS= 40V 8 6 4 2 0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 4 100 Fig 4. Typical Output Characteristics 100 10000 10 V DS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics ID, Drain-to-Source Current (A) 1 www.irf.com (c) 2015 International Rectifier 0 4 8 12 16 20 24 QG, Total Gate Charge (nC) Fig 8. Typical Gate Charge vs.Gate-to-Source Voltage Submit Datasheet Feedback March 31, 2015 IRF200B211 100 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS (on) 10 T J = 175C T J = 25C 1 100sec 10 1msec 1 10msec DC 0.1 Tc = 25C Tj = 175C Single Pulse VGS = 0V 0.01 0.1 0.2 0.4 0.6 0.8 1.0 1 1.2 100 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 10. Maximum Safe Operating Area Fig 9. Typical Source-Drain Diode Forward Voltage 1.4 250 Id = 1.0mA 1.2 1.0 225 Energy (J) V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 10 200 0.8 0.6 0.4 0.2 0.0 175 0 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Temperature ( C ) 20 40 60 80 100 120 140 160 180 200 VDS, Drain-to-Source Voltage (V) RDS(on), Drain-to -Source On Resistance ( m ) Fig 11. Drain-to-Source Breakdown Voltage Fig 12. Typical Coss Stored Energy 800 VGS = 6.0V VGS = 7.0V VGS = 8.0V VGS = 10V 700 600 500 400 300 200 100 0 10 20 30 40 ID, Drain Current (A) Fig 13. Typical On- Resistance vs. Drain Current 5 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback March 31, 2015 IRF200B211 Thermal Response ( Z thJC ) C/W 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart = 25C (Single Pulse) 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 tav (sec) Fig 15. Avalanche Current vs. Pulse Width EAR , Avalanche Energy (mJ) 100 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 7.2A 80 60 40 20 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) Fig 16. Maximum Avalanche Energy vs. Temperature 6 www.irf.com (c) 2015 International Rectifier Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Submit Datasheet Feedback March 31, 2015 IRF200B211 25 5.0 20 4.0 15 IRRM (A) VGS(th) , Gate threshold Voltage (V) 6.0 3.0 2.0 ID = 50A ID = 100A ID = 250A ID = 1.0mA IF = 4.8A V R = 100V TJ = 25C TJ = 125C 10 5 1.0 0 -75 -50 -25 0 25 50 75 100 125 150 175 100 200 300 400 500 600 700 800 900 1000 T J , Temperature ( C ) diF /dt (A/s) Fig 18. Typical Recovery Current vs. dif/dt Fig 17. Threshold Voltage vs. Temperature 700 25 600 TJ = 25C TJ = 125C 500 15 QRR (nC) IRRM (A) 20 IF = 7.2A V R = 100V 10 IF = 4.8A V R = 100V TJ = 25C TJ = 125C 400 300 200 5 100 0 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 diF /dt (A/s) diF /dt (A/s) Fig 20. Typical Stored Charge vs. dif/dt Fig 19. Typical Recovery Current vs. dif/dt 700 600 QRR (nC) 500 IF = 7.2A V R = 100V TJ = 25C TJ = 125C 400 300 200 100 0 100 200 300 400 500 600 700 800 900 1000 diF /dt (A/s) Fig 21. Typical Stored Charge vs. dif/dt 7 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback March 31, 2015 IRF200B211 Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V tp A I AS 0.01 Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Id Vds Vgs VDD Vgs(th) Qgs1 Qgs2 Fig 25a. Gate Charge Test Circuit 8 www.irf.com (c) 2015 International Rectifier Qgd Qgodr Fig 25b. Gate Charge Waveform Submit Datasheet Feedback March 31, 2015 IRF200B211 TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information EXAM PLE: T H IS IS A N IR F 1 0 1 0 LO T C O D E 1789 ASSEM BLED O N W W 19, 2000 IN T H E A S S E M B L Y L IN E "C " N o t e : "P " in a s s e m b ly lin e p o s it io n in d ic a t e s "L e a d - F r e e " IN T E R N A T IO N A L R E C T IF IE R LO G O ASSEM BLY LO T C O D E PART NUM BER D ATE C O D E YEA R 0 = 2000 W EEK 19 L IN E C TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback March 31, 2015 IRF200B211 Qualification Information Industrial (per JEDEC JESD47F) Qualification Level Moisture Sensitivity Level TO-220 N/A Yes RoHS Compliant Qualification standards can be found at International Rectifier's web site: http://www.irf.com/product-info/reliability/ Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback March 31, 2015