MOSPOWER Selector Guide (Continued) N-Channel MOSPOWER (continued) . Breakdown Ip Power Device Voltage (Omen Continuous Dissipation Part (Volts) (Ohms (Amps) (Watts) Number 100 0.055 40.0 150 IRF150 100 0.08 33.0 150 IRF152 100 0.085 27.0 125 IRF140 100 0.11 24.0 125 IRF 142 100 0.18 14.0 100 VN1000A 100 0.18 14.0 75 IRF130 100 0.25 12.0 100 VN1001A 100 0.25 12.0 75 IRF 132 100 0.3 8.0 40 (RF 120 100 0.4 7.0 40 IRF122 90 4.0 1.9 25 2N6658 90 45 1.8 25 VNSSAA e; 90 5.0 1.7 25 VNSOAA 80 0.18 14.0 100 VNQ8B00A Ee 80 0.25 12.0 100 VNO0801A 60 0.055 40.0 150 IRF 151 TO-3 60 0.08 33.0 150 IRF153 60 0.085 27.0 125 IRF141 60 0.11 24.0 125 IRF143 60 0.12 18.0 100 VNOGO0A 60 0.15 16.0 100 VNOGOTA 60 0.18 14.0 75 IRF131 60 0.25 12.0 75 IRF133 60 0.3 8.0 40 IRF121 60 0.4 10.0 80 VN64GA 60 0.4 7.0 40 IRF123 60 3.0 2.0 25 2N6657 60 3.5 2.0 25 VNG6G7AA 40 0.12 18.0 100 VNO400A 40 0.15 16.0 100 VNO401A 35 1.8 2.0 25 2N6656 35 25 2.0 25 VN35AA 500 0.85 8.0 125 (RF840 500 1.10 7.9 125 IRF842 500 1.5 45 75 VN5001D 500 1.5 45 75 IRF830 500 2.0 4.0 75 VN5002D 500 2.0 4.0 75 IRF832 500 3.0 25 40 IRF820 500 4.0 2.0 40 IRF822 450 0.85 8.0 125 IRF841 450 1.10 7.0 125 IRF843 450 1.5 45 75 VN4501D 450 1.5 45 75 IRF831 450 2.0 4.0 75 VN4502D 450 2.0 4.0 75 IRF833 450 3.0 2.5 40 IRF821 450 4.0 2.0 40 IRF823 400 0.55 10.0 125 IRF740 TO-220AB 400 0.80 8.0 125 IRF742 400 1.0 6.0 75 VN4000D 400 1.0 55 75 t{RF730 400 1.5 5.0 75 VN4001D 400 1.5 45 75 IRF732 400 1.8 3.0 40 IRF720 400 2.5 2.5 40 IRF722 350 0.55 10.0 425 IRF741 350 0.80 8.0 125 IRF743 350 1.0 6.0 75 VN3500D 350 1.0 55 75 IRF731 350 1.5 5.0 75 VN3501D 350 1.5 45 75 IRF733 350 1.8 3.0 40 IRF721 350 25 25 40 IRF723 240 6.0 1.4 20 VN2406D Siliconix 1-5 SPINS 10P9/SG YIMOdSOW400V MOSPOWER VN3500A = VN3501A = VN4000A VN4001A VN3500D # VN3501D VN4000D = VN4001D N-Channel Enhancement Mcde 5 Siliconix These power FETs are designed especially for offline switching regulators, converters, solenoid and relay drivers. FEATURES Product Summary u High Voltage Part |PRO ELECTRON BV, Rp Ip | Package = No Second Breakdown Number | PartNumber | DSS | "DS(on) | 'P . a High Input Impedance VN3500A | __ BUP6O 12 fea O38 a Internal Drain-Source Diode VN3500D 450V 70-220 a High Threshold for Noise immunity VN3501A BUP61 159 [5A 1073 = Very Rugged: Excellent SOA VN3501D TO-220 = &xtremely Fast Switching VN4000A |__BUP62 102 |6a ptO3 VN4000D 400V TO-229 VN4001A BUP63 TO-3 1.59 A --- BENEFITS VN4001D 5 TO-220 s Reduced Component Count > a improved Performance uJ a Simpler Designs ot = Improved Reliability g ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage Gate Current (Peak) ......05. 6... cc eee eee eee nee +3A VN3500A, D; VNS501A, DO... eee eee eee 350V Gate-Source Voltage ......... ccc cece e eet + 40V VNO4O0A, D; VN4001A, DD... 6. cece eee 400V Total Power Dissipation, A Suffix ............ 0000 125W Drain-Gate Voltage Linear Derating Factor .............0. eee eee 0.833WiC VN3500A, D; VN3501A, D..... eee eee 350V Total Power Dissipation, D Suffix .............00 eee eee 75W VN4O00A, D; VN4001A, Do... we cee eres 400V Linear Derating Factor .......... 0. cece eee eee O.6WIPC Drain Current Storage and Junction Temperature Continuous ASUPFIX oo cece eee 55C to +175C VN3500A, D; VN4000A, DD... cee eee +6A DSufflx oo. cee eee eee ee eee ~56C to + 150C VNS501A, D; VN4001A, D...... wee eee + 5A Pulsed? Notes: A SUFFIX. cece eet tener eens +16A 1. Limited by package dissipation. DSUffIK 0 cee eee eee + 10A 2. Pulse test 80ys to 300us, 1% duty cycle. PACKAGE DIMENSIONS 0.450 (71.43) Lae az o250 (eaa MAX 020 (0.51) PIN 1 Gate ane) MAX 085 (798) a8 sme 209 PIN2Source | 1 | _t CASE Drain TTT ot, SEATING aon os * a (e5) | PANEL 21097 1SBA087 Le $00 (12,70) PIN 1 Gate oes (17.tas) | MTT 1288881 oadist 408 wt a PIN 2 & TAB Drain Tess (16.637) , \ " (6.38) PIN 3 Source ! AE ertune oasa 171.176) Sry |? | q mas 1.09 0.420 /70.668) ea ote: 1a08e) cay ) ; ~! ~ 1 ' 8. tL No OST 73.835) | eae 18 0.208 15.207) rom view (Peas) MAX wo ese _ | je TO-204AA (TO-3) TO-220AB (A Suffix Parts) (BD Suffix Parts) 2-86 SiliconixELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Parameter Nonter Min | Max | Unit Test Conditions Static wnasooe | ax BVpss Drain-Source Breakdown Vv Ves=0, lp=1 mA VN4000A, D 400 VN4001A, D Vesan Gate Threshold Voltage All 3 6 Vv Ves = Vos: Ip=1 mA, lass Gate Body Leakage All 100 nA | Veg =30V, Vos = 0 Ipsgs_ Zero Gate Voltage Drain Current All ; mA Vos = Rated, Vos; Vas = 0 2.5 Vos = Rated Vos, Veg = 0, Te = 150C VN3500A, D 3 Vosion) Drain-Source Saturation Voltage SN aeOTE 5 ts Vv Ves = 10V, Ip =3A (Note 1) VN4001A, D , VN3500A, D 1 fpsiony) + Drain-Source On Resistance VIN4000A, D g Veg = 10V, Ip = 3A (Note 1) VN3501A, D 15 VN4001A, D lojon) On-State Drain Current All 8 A Vos = 25V, Vag = 10V (Note 1) Dynamic Ots Forward Transconductance Alt 25 mS | Vog= 25V, Ip= 3A (Note 1) Ciss_s Input Capacitance Alt 1000 Crss Reverse Transfer Capacitance All 40 PF | Veg=9, Vos = 25V, f= 1 MHz Coss Common-Source Output Capacitance All 220 taon) _Turn-On Delay Time All 50 t Rise Time All 50 | ag | Yoo=200V, Ip=1A, R, = 672, Ry =102 tao) Turn-Otf Delay Time All 100 (Figure 1) tr Fall Time All 80 Drain-Source Diode Characteristics Typ Vsp Forward ON Voltage All 1.2 Vv Ig =4A, Vag = 0 (Note 1) ter Reverse Recovery Time Ail 400 ns Ip =IR=4A, Veg = 0 (Figure 2) Note: Refer to VNDA40 Design Curves (See Section 4) 1. Pulse test: 80 us to 300 ws, 1% duty cycle. TEST CIRCUITS FIGURE 1 Switching Test Circuit Yin Yop ~~ 7 | Rgen = As ae | 20v ! 2 T's | |__| I | | ctReurr = E UNDER [GeNeRaToR| [TEST PW. = 1 Cg <50 pF as DUTY CYCLE = 1% IN4933 7 _ lpKyAdiust , lk ~ | < rm FIGURE 2 JEDEC Reverse Recovery Circuit A a v 502 di/at Adjust (1-27 uH) 4 * 5 TO 50uF 240Q 1N4001 4000uF Sem Pt - 4 R<0.252 L$ 0.01uH t . i WW (N4723 r 2N4204 SCOPE FROM TRIGGER CKT rn") Siliconix 2-87 | G'VLOOPNA = C'VOOOVNA = G'VIOSENA = C'VOOSENATYPICAL STATIC CHARACTERISTICS (Pulse width 80us300)s, Duty cycle 1%, Tc =25C) Part Numbers: VN3500A, VN3500D, VN3501A, VN3501D, VN4000A, VN4000D, VN4001A, VN4001D, IRF330, IRF331, Ip DRAIN CURRENT (AMPS) K, NORMALIZED ON RESISTANCE IRF 332, IRF333, IRF730, [RF731, IRF732, IRF733 Ohmic Region 20 16 Vas =20V 12 Vosisar) DRAIN SOURCE SATURATION VOLTAGE (VOLTS) 0 Qo 10 20 30 40 50 Vos DRAIN-SOURCE VOLTAGE (VOLTS) Temperature Effects on rpsjon) 2.4 a 2.0 = 2 8 1.6 Y z & 1.2 a wi LL) z 0.8 7 : 5 B 1 0.4 g 0 ~50-25 0 25 50 75 100 125 150 175 Ty JUNCTION TEMPERATURE (C) Transfer Characteristics VNDA4O Voltage Saturation Region 20 16 8A 6A 4A 2A 0 2 4 6 + 8 0 12 0 Vas Vesith GS(th) GATE ENHANCEMENT VOLTAGE (VOLTS) ON Resistance Characteristics 1:8 Ip = 10A 1.6 1.4 1.2 1.0 0.8 oO 0 2.4 6 8 10 12 Vas Vasith): GATE ENHANCEMENT VOLTAGE (VOLTS) Output Characteristics 10 BEC 20 Vos = 50V t a 25C a 8 a = 125C = 16 < = E & z 6 a 12 x ec a > > Oo z 4 Zz 8 < < a i 2 25C I 4 3 4 3 125C 3 0 2 4 6 8 0 40 120. 160 200 Vas ~ GATE SOURCE VOLTAGE (VOLTS) Vos DRAIN-SOURCE VOLTAGE (VOLTS) 01/83 Siliconix 4-5 OVVONATRANSIENT THERMAL RESISTANCE (NORMALIZED) TYPICAL CHARACTERISTICS (Cont'd) Part Numbers: VN3500A, VN3500D, VN3501A, VN3501D, VN4000A, VN4000D, VN4001A, VN4001D, IRF330, IRF331, IRF332, IRF 333, IRF730, IRF731, IRF732, IRF733 Safe Operating Area, Active Region, TO-3 Package VNDA40 Safe Operating Area, Active Region, TO-220AB Package 100 10 y oe 10 ys J = 50 [CURRENT DEPENDS a < J NounneNr. | 4 2 UPON rps(on) a DEPENDS 7 = 20 = L WN UPON rosion\ | J = 10 | VN9S008 = 2 NNR N 100 us o . a ~ \S alle VN3501A & 4b-Tc=28 NS | 1 2 = [VN4001A 3 E NAAN CH iins 4 = 10 2 ost | NS N | 1 = 1 + A-IRF331,3,731,3 NA Nio ms 4 Oo 08 a | B-IRF330, 2,730, 2 1 4 I N a 5 pc 1 g.a|_ C-IRE330, 1 730, 1 DC NJ} 100 ms = oe To = 25C gg %2)~D-RF332,3 732, 3 0.1 0.4 | 1 Lol 1 Lit 10 20 50 100 200 500 1000 10 620 50 100 200 500 1000 Vps DRAIN-SOURCE VOLTAGE (VOLTS) Vps - DRAIN SOURCE VOLTAGE (VOLTS) Power Derating Safe Operating Area, Switching 150 1.50 20 = 125 1.28 a A SUFFIX x 16 z s = 9 )} << ~ =< 100 10 Oo a Po| 5 612 a a N\ A rd oo. 21 Kp | & SUFFIX ons 2 D SUFFIX Bj a aX) Rac = 12 cw) ZO 2 12 i A 9 2 21> = 50 NOAA oso = SWITCHING LOAD 8 is 2 SeN N\ 9 5 LINES MUST LIE S > D SUFFIX | MOS 9 7 gL WITHIN THis AREA | [5 | ao 25 } {Pp SS 0.25 a VALID FOR t, AND t+ a Rajc = 1.67C/W = UNDER ONE | | 0 MICROSECOND Q 0 25 50 75 100 125 150 175 0 100 200 300 400 500 Tc CASE TEMPERATURE (C) Vps DRAIN SOURCE VOLTAGE (VOLTS) The safe operating area data of Active Region, TO-3 Package and Active Region, TO-220AB Package indicates maximum operating current Thermal Response as a function of voltage and time at Tg = 25C. At 1.0F Trim ty elevated temperatures, power must be derated E > using the derating factor, Kp from Power fe a Derating. Current limitations imposed by "psion) [ Zo | 7] are not shown except at 25C. When operating in | D SUFFIX Zz J fheonmic region, the maximum current is found = = E A SUFFIX 4 lo= (-Pg) 7 or K, Fpsion) @ 25C 4 where Pp is the power dissipation at operating + case temperature and rpgin) is the on resistance for the part. K, is the multiplying factor for on-re- 0.0 Pett ui tot vit bd tty {LU pdb i sistance at the maximum rated junction tempera- 0.01 0.1 1.0 10 100 1000 ture taken from Temperature Effects on rpgion)- TIME (mS) Since on-resistance varies somewhat with cur- rent, some iteration of Ip and rpgion) Must be done using ON Resistance Characteristics as a guide. SiliconixTYPICAL CHARACTERISTICS (Cont'd) Part Numbers: VN3500A, VN3500D, VN3501A, VN3501D, VN4000A, VN4000D, VN4001A, VN4001D, IRF330, IRF331, IRF332, IRF333, IRF730, IRF731, IRF732, IRF733 SWITCHING TIME Eftects of Load Conditions z z ul = = - - g g = = g eg 5 5 | I Vin = 10V = 100 1 2 3C4 8 10 Ip DRAIN CURRENT (AMPS) CHARGE Turn-On Charge 400 Vos = 200V 300 Sow 200 Vas GATE-SOURCE VOLTAGE (VOLTS) Vos DRAIN SOURCE VOLTAGE (VOLTS) (SLIOA) JOVLIOA ZOUNOS BLVD SPA 0 5 10 15 20 25 30 35 Q CHARGE (nC) VNDA4O Effects of Drive Resistance 1000 FT TT TTT q TTR Vin = 10V qa 500 | Vop = 200V. L Ip=3A 4 . taotfy A 200 100 |- 4 50. Z LL en | 20 tf ~ t 1 10 Lert pitiin 1 2 5 10 20 50 100 Rs -- SOURCE RESISTANCE (OHMS) Turn-Off Charge 16 400 Ry = 1000 =10V 0 5 10 15 20 25 30 @ CHARGE (nC) Switching Time Equations Qu Vos tayon) = 2 Agen In {| d(on) Vogt gen (es _ Vor Qg2o-Q Veg-V t= 9 8 Eg in VSS = *) Vg2 7 Vgi Veo 7 Vg2 OFF ON Vos 90% Vaa Voi Vga -10% ! 4 Qg1 Qg2 Qgs TURN-ON Qos Qg2 taotty = 9 Rgen In Vac ~ Vg2 Voge ~ "gt gi ON OFF vi Vea "7 ps \ Vg2 Vgi 2] T Qga Qg2 Qg: TURN-OFF 200 100 (SL10A) ADVLIOA JDUNOS-NIVEG SOA Siliconix OVVGNA