©2000 Fairchild Semiconductor International Rev. A, February 2000
BD175/177/179
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
hFE Classificntion
* Classification 16: Only BD175
Symbol Parameter Value Units
VCBO *Collector-Base Voltage : BD175
: BD177
: BD179
45
60
80
V
V
V
VCEO Collector-Emitter Voltage : BD175
: BD177
: BD179
45
60
80
V
V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 3 A
ICP *Collector Current (Pulse) 7 A
PC Collector Dissipation (TC=25°C) 30 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Co ndition Min. Typ. Max. Units
VCEO(sus) * Collector-Emit ter Susta ining Voltage
: BD175
: BD177
: BD179
IC = 100mA, IB = 0 45
60
80
V
V
V
ICBO Collector Cut-off Current : BD175
: BD177
: BD179
VCB = 45V, IE = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
100
100
100
µA
µA
µA
IEBO Emitter Cut -of f Curr ent VEB = 5V, IC = 0 1 mA
hFE1
hFE2
* DC Current G ain VCE = 2V, IC = 150mA
VCE = 2V, IC = 1A 40
15 250
VCE(sat) * Collect or-Emitter Satu rat ion Voltage IC = 1A, IB = 0.1A 0.8 V
VBE(on) * Base-Emitter On Voltage VCE = 2V, IC = 1A 1.3 V
fT Current Gain Bandwidth Product VCE = 10V, IC = 250mA 3 MHz
Classification 6 10 16
hFE1 40 ~ 100 63 ~ 160 100 ~ 250
BD175/177/179
Medium Power Linear and Switching
Applications
• Complement to BD 176/178/180 respectively
1TO-126
1. Emitter 2.Collector 3.Base
©2000 Fairchild Semiconductor International
BD175/177/179
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
0.01 0.1 1 10
1
10
100
1000 VCE = 2V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10
0.01
0.1
1
10
VCE(sat)
VBE(sat)
IC = 10 IB
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
1 10 100
0.1
1
10
IC MAX. (Contin uous)
BD179
BD177
BD175
10µs
100
µ
s
1ms
DC
IC MAX. (Pulsed)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITT ER VOLTAGE
0 25 50 75 100 125 150 175
0
5
10
15
20
25
30
35
40
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BD175/177/179
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2000 Fairchild Semiconductor International Rev. E
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Definition of Terms
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Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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