BAR 64 ... W Silicon PIN Diode 3 High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz Low resistance and short carrier lifetime 2 For frequencies up to 3 GHz 1 BAR 64-04W BAR 64-05W C1/A2 3 BAR 64-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181 VSO05561 EHA07179 EHA07187 Type Marking Pin Configuration Package BAR 64-04W PPs 1 = A1 2 = C2 3=C1/A2 SOT-323 BAR 64-05W PRs 1 = A1 2 = C2 3 = C1/2 SOT-323 BAR 64-06W PSs 1 = C1 2 = C2 3 = A1/2 SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 150 V Forward current IF 100 mA Total power dissipation, TS 115 C Ptot 250 mW Junction temperature Tj 150 C Operating temperature range Top -55 ... 150 Storage temperature Tstg -55 ... 150 Value Unit Thermal Resistance Junction - ambient 1) Junction - soldering point RthJA 300 RthJS 140 K/W 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm 1 Mar-21-2000 BAR 64 ... W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 150 - - V IR - - 50 nA VF - - 1.1 V CT - 0.23 0.35 pF DC characteristics Breakdown voltage V(BR) I(BR) = 5 A Reverse current VR = 20 V Forward voltage IF = 50 mA AC characteristics Diode capacitance VR = 20 V, f = 1 MHz Forward resistance rf IF = 1 mA, f = 100 MHz - 12.5 20 IF = 10 mA, f = 100 MHz - 2.1 2.8 IF = 100 mA, f = 100 MHz - 0.85 1.35 rr - 1.55 - s Ls - 1.2 - nH Charge carrier life time IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance 2 Mar-21-2000 BAR 64 ... W Forward current IF = f (TA *;TS ) * mounted on alumina TA S 140 5 mA IF 100 80 60 40 20 0 0 20 40 60 80 120 C 100 150 TA,T S Permissible Pulse Load RthJS = f(tp ) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 10 2 IFmax / IFDC K/W RthJS 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 - 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 1 tp 3 Mar-21-2000 BAR 64 ... W Diode capacitance CT = f (VR) Forward resistance rf = f(IF ) f = 1MHz f = 100MHz 10 3 0.5 Ohm pF 0.3 rf CT 10 2 10 1 0.2 10 0 0.1 0.0 0 5 10 15 20 V 10 -1 -2 10 30 10 -1 10 0 10 1 10 VR 2 mA10 3 IF Forward current IF = f (VF ) Intermodulation intercept point TA = parameter IP3 = f (IF ) f = parameter 10 3 10 2 5 mA f=900MHz f=1800MHz IP3 IF 10 2 10 1 dBm 10 0 10 -1 10 -2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 10 1 -1 10 1.0 VF 10 0 mA 10 1 IF 4 Mar-21-2000