Continental Device India Limited Data Sheet Page 1 of 3
2N6121, 6122, 6123 NPN PLASTIC POWER TRANSISTORS
2N6124, 6125, 6126 PNP PLASTIC POWER TRANSISTORS
Medium Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS 6121 6122 6123
6124 6125 6126
Collector-base voltage (open emitter) VCBO max. 45 60 80 V
Collector-emitter voltage (open base) VCEO max. 45 60 80 V
Collector current ICmax. 4.0 A
Total power dissipation up to TC = 25°C Ptot max. 40 W
Junction temperature Tjmax. 150 °C
Collector-emitter saturation voltage
IC = 1.5 A; IB = 0.15 A VCEsat max. 0.6 V
D.C. current gain
IC = 1.5 A; VCE = 2 V hFE min. 25 25 20
max. 100 100 80
RATINGS (at TA=25°C unless otherwise specified)
Limiting values 6121 6122 6123
6124 6125 6126
Collector-base voltage (open emitter) VCBO max. 45 60 80 V
Collector-emitter voltage (open base) VCEO max. 45 60 80 V
Emitter-base voltage (open collector) VEBO max. 5.0 V
2N6121, 2N6122, 2N6123
2N6124, 2N6125, 2N6126
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
B
123
J
M
G
D
H
A
OO
K
N
L
FE
CDIM MIN. MAX.
All diminsions in mm.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
ODEG 7
12
3
4
TO-220 Plastic Package
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
Continental Device India Limited Data Sheet Page 2 of 3
Collector current ICmax. 4.0 A
Collector current (Peak) ICM max. 7.0 A
Base current IBmax. 1.0 A
Total power dissipation up to TC = 25°C Ptot max. 40 W
Derate above 25°C max. 320
mW/
°
C
Junction temperature Tjmax. 150 °C
Storage temperature Tstg –65 to +150
ºC
THERMAL RESISTANCE
From junction to case Rth j–c 3.12 °C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified 6121 6122 6123
6124 6125 6126
Collector cutoff current
IB = 0; VCE = 45 V ICEO max. 1.0 – – mA
IB = 0; VCE = 60 V ICEO max. – 1.0 – mA
IB = 0; VCE = 80 V ICEO max. – – 1.0 mA
VEB(off) = 1.5 V; VCE = 45 V ICEX max. 0.1 – – mA
VEB(off) = 1.5 V; VCE = 60 V ICEX max. – 0.1 – mA
VEB(off) = 1.5 V; VCE = 85 V ICEX max. – – 0.1 mA
V
EB(off)
= 1.5 V; V
CE
= 45 V; T
C
= 125°C
ICEXmax. 2.0 – – mA
V
EB(off)
= 1.5 V; V
CE
= 60 V; T
C
= 125°C
ICEXmax. – 2.0 – mA
V
EB(off)
= 1.5 V; V
CE
= 80 V; T
C
= 125°C
ICEXmax. – – 2.0
mAIE = 0; VCB = 45 V ICBO max. 0.1 – – mA
IE = 0; VCB = 60 V ICBO max. – 0.1 – mA
IE = 0; VCB = 80 V ICBO max. – – 0.1 mA
Emitter cut-off current
IC = 0; VEB = 5 V IEBO max. 1.0 mA
Breakdown voltages
IC = 100 mA; IB = 0 VCEO(sus)* min. 45 60 80 V
IC = 1 mA; IE = 0 VCBO min. 45 60 80 V
IE = 1 mA; IC = 0 VEBO min. 5.0 V
Saturation voltages
IC = 1.5 A; IB = 0.15 A VCEsat* max. 0.6 V
IC = 4 A; IB = 1.0 A VCEsat* max. 1.4 V
Base-emitter on voltage
IC = 1.5 A; VCE = 2 V VBE(on)* max. 1.2 V
D.C. current gain
IC = 1.5 A; VCE = 2 V hFE* min. 25 25 20
max.100 100 80
IC = 4 A; VCE = 2 V hFE* min. 10 10 7.0
Small signal current
IC = 0.1 A; VCE = 2 V; f = 1.0 KHz hfe min. 25
Transition frequency at f = 1 MHz
IC = 1 A; VCE = 4 V fTmin. 2.5 MHz
* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%.
2N6121, 2N6122, 2N6123
2N6124, 2N6125, 2N6126
Continental Device India Limited Data Sheet Page 3 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
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neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
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CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com www.cdilsemi.com
