Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 11
Publication Order Number:
BAT54LT1/D
BAT54LT1G,
NSVBAT54LT1G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc
AEC Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TJ = 125C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage VR30 Volts
Forward Power Dissipation
@ TA = 25C
Derate above 25C
PF200
2.0
mW
mW/C
Forward Current (DC) IF200 Max mA
Non−Repetitive Peak Forward Current
tp < 10 msec
IFSM 600
mA
Repetitive Peak Forward Current
Pulse Wave = 1 sec,
Duty Cycle = 66%
IFRM 300
mA
Junction Temperature TJ−55 to +125 C
Storage Temperature Range Tstg −55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
30 VOLTS
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
MARKING DIAGRAM
3
CATHODE
1
ANODE
SOT−23 (TO−236)
CASE 318
STYLE 8
(Note: Microdot may be in either location)
Device Package Shipping†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAT54LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
http://onsemi.com
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
JV3 = Device Code
M = Date Code
G= Pb−Free Package
1
JV3 M G
G
NSVBAT54LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
BAT54LT1G, NSVBAT54LT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR = 10 A)
V(BR)R 30 − −
Volts
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
−7.6 10
pF
Reverse Leakage
(VR = 25 V)
IR
−0.5 2.0
Adc
Forward Voltage
(IF = 0.1 mAdc)
VF
−0.22 0.24
Vdc
Forward Voltage
(IF = 30 mAdc)
VF
−0.41 0.5
Vdc
Forward Voltage
(IF = 100 mAdc)
VF
−0.52 0.8
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
trr
− − 5.0
ns
Forward Voltage
(IF = 1.0 mAdc)
VF
−0.29 0.32
Vdc
Forward Voltage
(IF = 10 mAdc)
VF
−0.35 0.40
Vdc
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2 k
820
0.1 F
DUT
VR
100 H
0.1 F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
trtpT
10%
90%
IF
IR
trr T
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAT54LT1G, NSVBAT54LT1G
http://onsemi.com
3
CT
, TOATAL CAPACITANCE (pF)
100
0.0 0.1
VF
, FORWARD VOLTAGE (VOLTS)
0.2 0.3 0.4 0.5
10
1.0
0.1
85C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
510
15 20 25
14
0
VR, REVERSE VOLTAGE (VOLTS)
12
4
2
051015 30
Figure 2. Forward Voltage
Figure 3. Leakage Current
Figure 4. Total Capacitance
−40C
25C
TA = 150C
TA = 125C
TA = 85C
TA = 25C
0.6
−55C
150C
125C
100
1000
30
2520
6
8
10
IR, REVERSE CURRENT (A)
IF
, FORWARD CURRENT (mA)
BAT54LT1G, NSVBAT54LT1G
http://onsemi.com
4
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q
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BAT54LT1/D
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