PM75B5L1C060
Photo Voltaic IPM
H-Bridge + 1 Chopper
75 Amperes/600 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
403/11 Rev. 0
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Control Part
Circuit Current ID VD = 15V, VCIN = 15V, VN1-VNC — 6.5 12 mA
VD = 15V, VCIN = 15V, V*P1-V*PC — 1.6 4 mA
Input ON Threshold Voltage Vth(on) Applied between UP-VUPC, 1.2 1.5 1.8 Volts
Input OFF Threshold Voltage Vth(off) VP-VVPC, UN- VN- WN-Br-VNC 1.7 2.0 2.3 Volts
Short Circuit Trip Level SC -20°C ≤ Tj ≤ 125°C, VD = 15V 112 — — Amperes
Short Circuit Current Delay Time toff(SC) VD = 15V — 0.2 — µs
Over Temperature Protection OT Trip Level 135 — — °C
(Detect Temperature of IGBT) OT(hys) Hysteresis — 20 — °C
Supply Circuit Under-voltage Protection UVt Trip Level 11.5 12.0 12.5 Volts
(-20°C ≤ Tj ≤ 125°C) UVr Reset Level — 12.5 — Volts
Fault Output Current*2 IFO(H) VD = 15V, VFO = 15V — — 0.01 mA
IFO(L) VD = 15V, VFO = 15V — 10 15 mA
Fault Output Pulse Width*2 tFO VD = 15V 1.0 1.8 — ms
Thermal Characteristics, Tj = 25°C unless otherwise specied
Characteristic Symbol Condition Min. Typ. Max. Units
Junction to Case Thermal Resistance Rth(j-c)Q Inverter IGBT (Per 1 Element)*1 — — 0.62 °C/Watt
Rth(j-c)D Inverter FWDi (Per 1 Element)*1 — — 1.06 °C/Watt
Rth(j-c)Q Converter IGBT (Per 1 Element)*1 — — 0.62 °C/Watt
Rth(j-c)D Converter FWDi (Per 1 Element)*1 — — 1.06 °C/Watt
Rth(j-c)D Converter Diode (Per 1 Element)*1 — — 1.06 °C/Watt
Contact Thermal Resistance Rth(c-f) Case to Fin (Per 1 Element)*1, — 0.060 — °C/Watt
Thermal Grease Applied
Recommended Conditions for Use
Characteristic Symbol Condition Value Units
Inverter Supply Voltage VCC Applied across P-N Terminals ≤450 Volts
Control Supply Voltage*3 VD Applied between VUP1-VUPC, 15.0 ± 1.5 Volts
VVP1-VVPC, VN1-VNC
Input ON Voltage VCIN(on) Applied between UP-VUPC, ≤0.8 Volts
Input OFF Voltage VCIN(off) VP-VVPC, UN- VN- WN-Br-VNC ≥9.0 Volts
PWM Input Frequency fPWM Using Application Circuit Input Signal of IPM, ≤20 kHz
3-Phase Sinusoidal PWM VVVF Inverter
Arm Shoot-through Blocking Time tDEAD For IPMs Each Input Signals ≥2.0 µs
*1 When using this value, Rth(s-a) should be measured just under the chips.
*2 Fault output is given only when the internal SC, OT and UV protections schemes of either upper or lower devide operate to protect it.
Fault output of SC protection given pulse. Fault output of OT, UV protection given pulse while over trip level.
*3 With ripple satisfying the following conditions: dv/dt swing ≤5V/µs ; variation ≤2V peak-to-peak.