LESHAN RADIO COMPANY, LTD.
LBAT54HT1–1/3
Schottky Barrier Diodes
2
ANODE
1
CATHODE
MAXIMUM RATINGS (TJ=125°C unless otherwise noted )
Rating Symbol Value Unit
Reverse Voltage VR30 V
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR-5 Board,* PD200 mW
TA= 25°C
Derate above 25°C 1.57 mW/°C
Thermal Resistance Junction to Ambient RθJA 635 °C/W
Junction and Storage Temperature TJ,Tstg 150 °C
* FR-4 Minimum Pad
1
2
LBAT54HT1
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low forward volt-
age reduces conduction loss. Miniature surface mount package is excellent for
hand held and portable applications where space is limited.
•Extremely Fast Switching Speed
•Low Forward Voltage — 0.35 Volts (Typ) @ I F= 10 mAdc
•Device Marking: JV
ELECTRICAL CHARACTERISTICS (T A= 25°C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage (I R= 10 µA) V(BR)R 30 — — Volts
Total Capacitance (V R= 1.0 V, f = 1.0 MHz) CT—7.610pF
Reverse Leakage (V R= 25 V) IR—0.52.0µAdc
Forward Voltage (I F= 0.1 mAdc) VF— 0.22 0.24 Vdc
Forward Voltage (I F= 0.15 mAdc) VF— 0.24 0.26 Vdc
Forward Voltage (I F= 0.15 mAdc, Tj=-25°C) VF— 0.33 0.35 Vdc
Forward Voltage (I F= 0.15 mAdc, Tj=85°C) VF— 0.16 0.18 Vdc
Forward Voltage (I F= 30 mAdc) VF— 0.41 0.5 Vdc
Forward Voltage (I F= 100 mAdc) VF— 0.52 1.0 Vdc
Reverse Recovery Time
(I F= I R= 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1) trr ——5.0ns
Forward Voltage (I F= 1.0 mAdc) VF— 0.29 0.32 Vdc
Forward Voltage (I F= 10 mAdc) VF— 0.35 0.40 Vdc
Forward Current (DC) IF— — 200 mAdc
Repetitive Peak Forward Current IFRM — — 300 mAdc
Non–Repetitive Peak Forward Current (t < 1.0 s) IFSM — — 600 mAdc
SOD-323
Pb-Free Package May be Available. The G.Suffix Denotes a Pb-Free
Lead Finish
Device Package Shipping
LBAT54HT1 SOD-323 3000/Tape & Reel
LBAT54HT1G SOD-323 3000/Tape & Reel
ODERING INFORMATION