Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SDR3 __ __ __
└ Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
│
│
│
│
│
│
└ Package Type
__ = Axial Leaded
SMS = Surface Mount Square Tab
│
│
│
│
│
│
│
│
│
│
└ Family
A = 50 V J = 600V
B = 100V K = 800V
D = 200V M = 1000V
G = 400V N = 1200V
SDR3A and SDR3ASMS
thru
SDR3N and SDR3NSMS
3.0 AMPS
50 ─ 1200 VOLTS
50 – 80 nsec ULTRA FAST RECTIFIER
FEATURES:
• Ultra Fast Recovery: 50-80 ns Max @ 25ºC 4/
85-125 ns Max @ 100ºC 4/
• Single Chip Construction
• PIV to 1200 Volts
• Low Reverse Leakage Current
• Hermetically Sealed
• For High Efficiency Applications
• Available in Axial and Surface Mount Versions
• Metallurgically Bonded
• TX, TXV, and S-Level Screening Available 2/
MAXIMUM RATINGS 3/
RATING SYMBOL VALUE UNIT
Peak Repetitive Reverse
Voltage
And
DC Blocking Voltage
SDR3A and SDR3ASMS
SDR3B and SDR3BSMS
SDR3D and SDR3DSMS
SDR3G and SDR3GSMS
SDR3J and SDR3JSMS
SDR3K and SDR3KSMS
SDR3M and SDR3MSMS
SDR3N and SDR3NSMS
VRRM
VRWM
VR
50
100
200
400
600
800
1000
1200
Volts
Rectified Forward Forward Current
(Resistive Load, 60 Hz, Sine Wave, TA = 25°C) IO 3 Amp
Peak Surge Current
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, TA = 25°C)
IFSM 75 Amps
Operating & Storage Temperature TOP and TSTG -65 to +175 °C
Thermal Resistance, Junction to Lead, L = 3/8”
Junction to End Tab
RθJL
RθJE
20
14 °C/W
NOTES:
1/ For Ordering Information, Price, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
4/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, IRR to .25 Amp.
5/ For information on operating curves, contact factory.
Axial Leaded
SMS
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0013G DOC
ELECTRICAL CHARACTERISTICS 3/
CHARACTERISTICS SYMBOL VALUE UNIT
Instantaneous Forward Voltage Drop
(IF = 3Adc, 300- 500 μs Pulse, TA = 25°C)
SDR3A thru SDR3J
SDR3K thru SDR3N
VF1
1.35
1.90 Vdc
Instantaneous Forward Voltage Drop
(IF = 3Adc, 300- 500 μs Pulse, TA = -55°C)
SDR3A thru SDR3J
SDR3K thru SDR3N
VF2
1.50
2.10 Vdc
Maximum Reverse Leakage Current
(Rated VR, 300 μs Pulse Minimum , TA = 25°C) IR1 5 μA
Maximum Reverse Leakage Current
(Rated VR, 300 μs Pulse Minimum , TA = 100°C) IR2 500 μA
Junction Capacitance
(VR = 10Vdc, TA = 25°C , f = 1MHz) CJ 50 pf
Maximum Reverse Recovery Time 4/
SDR3A thru SDR3J
SDR3K
SDR3M
SDR3N
trr
50
60
70
80
ns
DIMENSIONS DIMENSIONS
DIM. MIN. MAX. DIM. MIN. MAX.
A .120” .180” A .172” .180”
B --- .230” B .180” .280”
C .047” .053” C .022” .028”
Axial Leaded Case Outline 5/:
D 1.00” --- D .002” ---
Square Tab Surface Mount Case
Outline 5/:
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR3A and SDR3ASMS
thru
SDR3N and SDR3NSMS
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0013G DOC
