May 1998 NDT3055 N-Channel Enhancement Mode Field Effect Transistor General Description Features 4 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. SuperSOTTM-3 High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. SuperSOTTM-8 SuperSOTTM-6 SOIC-16 SOT-223 D D D SO-8 D S S D G G SOT-223 D S SOT-223* G G S (J23Z) Absolute Maximum Ratings TA = 25oC unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage - Continuous ID Maximum Drain Current - Continuous (Note 1a) - Pulsed PD Maximum Power Dissipation Units 60 V 20 V 4 A 25 (Note 1a) 3 (Note 1b) 1.3 (Note 1c) TJ,TSTG NDT3055 Operating and Storage Temperature Range W 1.1 -65 to 150 C THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 C/W RJC Thermal Resistance, Junction-to-Case (Note 1) 12 C/W * Order option J23Z for cropped center drain lead. (c) 1998 Fairchild Semiconductor Corporation NDT3055 Rev.B Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A 60 BVDSS/TJ Breakdown Voltage Temp. Coefficient ID = 250 A, Referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V o V 63 TJ =125C ON CHARACTERISTICS VGS(th) mV/ C 10 A 100 A 100 nA -100 nA V (Note 2) Gate Threshold Voltage VDS = VGS, ID = 250 A TJ =125C RDS(ON) o Static Drain-Source On-Resistance 2 3 4 1.5 2.4 3 VGS = 10 V, ID = 4 A TJ =125C ID(ON) On-State Drain Current VGS = 10 V, VDS = 10 V gFS Forward Transconductance VDS = 15 V, ID = 4 A 0.084 0.1 0.14 0.18 15 A 6 S 250 pF 100 pF 30 pF DYNAMIC CHARACTERISTICS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 30 V, VGS = 0 V, f = 1.0 MHz SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) tf 10 25 ns 18 50 ns Turn - Off Delay Time 37 65 ns Turn - Off Fall Time 30 60 ns 9 15 nC Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 25 V, ID = 1.2 A, VGS = 10 V, RGEN = 50 VDS = 40 V, ID = 4 A, VGS = 10 V 2.3 nC 2.6 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A 0.85 (Note 2) 2.5 A 1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. Typical RJA using the board layouts shown below on FR-4 PCB in a still air environment: a. 42oC/W when mounted on a 1 in2 pad of b. 95oC/W when mounted on a 2oz Cu. pad of 2oz Cu. 0.066 in2 c. 110oC/W when mounted on a 0.00123 in2 pad of 2oz Cu. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% NDT3055 Rev.B Typical Electrical Characteristics 3 VGS =10V 8.0V 12 R DS(ON), NORMALIZED 7.0V 9 6.0V 6 5.5V 5.0V 3 4.5V 0 0 1 2 3 4 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 15 VGS = 5.5V 2.5 6.5V 2 7.0V 8.0V 1.5 10V 1 0.5 5 6.0V 0 4 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. R DS(ON), ON-RESISTANCE (OHM) 1.2 0.8 20 I D = 2A 0.3 0.2 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 150 10 VDS = 10V TA = 125C 0.1 TA = 25C 0 -25 4 6 10 8 6 4 2 0 VGS = 0V 1 8 TA = 125C 0.1 25C 0.01 -55C 0.001 0.0001 Figure 5. Transfer Characteristics. 10 Figure 4. On-Resistance Variation with Gate-to- Source Voltage. TJ = -55C 25C 125C 4 6 VGS , GATE TO SOURCE VOLTAGE (V) 8 VGS , GATE TO SOURCE VOLTAGE (V) IS , REVERSE DRAIN CURRENT (A) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 Figure 3. On-Resistance Variation with Temperature. I D , DRAIN CURRENT (A) 16 0.4 ID = 4A VGS =10V 2 12 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 0.4 -50 8 I D , DRAIN CURRENT (A) 0 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Current and Temperature. NDT3055 Rev.B 1000 15 I D = 4A VDS = 10V 500 20V 40V 12 CAPACITANCE (pF) V GS , GATE-SOURCE VOLTAGE (V) Typical Electrical Characteristics (continued) 9 6 3 Ciss 200 Coss 100 50 Crss f = 1 MHz VGS = 0V 20 0 0 3 6 9 12 15 10 0.1 Q g , GATE CHARGE (nC) 0.3 1 4 10 30 60 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 80 10 1m 3 10m 10 1 1s 10 s DC 0.3 0.1 0.03 0.01 0.1 VGS = 10V SINGLE PULSE R JA = 110o C/W TA = 25C 0.2 0.5 0m 0u SINGLE PULSE RJA =110C/W TA = 25C s s 60 POWER (W) IT LIM N) S(O RD 10 s s 40 20 1 2 5 10 30 0 0.001 60 100 0.01 VDS , DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 300 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID , DRAIN CURRENT (A) 50 Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 0.01 R JA (t) = r(t) * R JA R JA = 110 C/W P(pk) 0.01 t1 0.005 Single Pulse 0.002 0.001 0.0001 t2 TJ - TA = P * R JA (t) Duty Cycle, D = t1 / t 2 0.001 0.01 0.1 1 10 100 300 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. NDT3055 Rev.B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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