V2 850 nm multimode VCSEL 2,5 / 3,125 / 5 Gbps for high speed data transmission * High speed up to 5 Gb/s * Lowest threshold current * Lowest power consumption Warning: Laser radiation, avoid exposure to beam. Class 3B laser product, potential eye hazard. ELECTRO-OPTICAL-CHARACTERISTICS, (VCSEL CHIP) PARAMETER Emission wavelength Threshold current Threshold current variation Threshold voltage Laser current Laser voltage Wallplug efficiency Slope efficiency Variation of slope efficiency Differential series resistance 3dB modulation bandwidth Rise and fall time Relative intensity noise Wavelength tuning over current Wavelength tuning over temp. Thermal resistance Beam divergence Spectral bandwidth SYMBOL R ITH ITH UTH IOP UOP WP RS 3dB tR/tF UNITS nm mA mA V mA V % W/A W/A GHz ps RTHERMAL dB/Hz-0.5 nm/mA nm/K K/W nm RIN MIN 835 0.8 TYP 850 1.5 1.5 2.3 1.6 10 0.2 1.8 3.0 2.0 17 0.5 30 3 70 6 90 0.15 -130 0.20 0.07 6 14 MAX 860 2.0 0.7 2.0 5.0 2.3 30 0.7 0.2 100 150 -120 2 20 1 TEST CONDITIONS T = 20C T = 20C T = 0 .. 70C Popt = 1 mW Popt = 1 mW Popt = 1 mW T = 0 .. 70C T = 0 .. 70C Popt = 1 mW Popt = 1 mW 10%..90%; Poff=0.1mW, Pon=1.0mW Popt = 1 mW @ 1 GHz Popt = 1 mW, full width 1/e rms ABSOLUTE MAXIMUM RATINGS Storage temperature Operating temperature Electrical power dissipation Continous forward current Reverse voltage Soldering temperature -40 .. 85C 0 .. 70C 30 mW 12 mA 8V @ I = 10 A 330C GEOMETRICAL SPECIFICATIONS Chip area Chip thickness Emission area centered on chip Substrate side metallization Top side metallization U-L-M photonics GmbH Lise-Meitner-St 13 D - 89081 Ulm Germany 250x250 m 150 +/- 20 m VCSEL cathode VCSEL anode Available on chip level, array formats or in TO18/46 can Fon: +49 731 550194-014 Fax: +49 731 550194-026 email: sales@ulm-photonics.de www.ulm-photonics.de V2 3 5 -10 850 nm multimode VCSEL, Popt=1 mW 850 nm multimode VCSEL -30 -40 -50 2 3 voltage (V) optical power (mW) rel. optical power (dB) 4 -20 2 1 1 -60 0.838 0.839 0.840 0.841 0.842 0.843 0 0.84 0 1 2 3 4 wavelength (m) 5 6 7 8 0 10 9 current (mA) Spectral bandwidth Threshold 0.7 2.5 850 nm multimode VCSEL 850 nm multimode VCSEL 0.6 slope efficiency (W/A) threshold current (mA) 2.0 1.5 1.0 0.5 0.5 0.4 0.3 0.2 0.1 0.0 0 10 20 30 40 50 60 0.0 -10 70 0 10 temperature (C) 30 60 70 80 1.0 0.8 30 850 nm multimode VCSEL, 5Gb/s, Pavg=1mW, ER=8dB 0.6 0.4 3mW 2mW 1mW 0.5mW 10 Popt=0.2mW voltage (V) 20 0.2 0.0 -0.2 -0.4 0 -0.6 -0.8 2.0G 4.0G 6.0G -1.0 8.0G 37.5 37.6 37.7 frequency (Hz) 32 30 37.8 37.9 time (ns) 3dB modulation bandwidth Rise and fall time at 5Gbps 858 850 nm multimode VCSEL 28 26 850 nm multimode VCSEL 857 24 22 20 856 1mW output power wavelength (nm) 2 50 Slope efficiency & variation 850 nm multimode VCSEL -10 0.0 farfield angle (full width, 1/e ) 40 temperature (C) Threshold current variation 40 small signal modulation response (dB) 20 18 16 14 12 10 8 6 855 854 I=3.0mA I=7.5mA 853 852 4 2 0 0 2 4 6 drive current (mA) Beam divergence U-L-M photonics GmbH Lise-Meitner-St 13 D - 89081 Ulm Germany 8 10 851 280 300 320 340 360 380 temperature (K) Wavelenght tuning over temperature Fon: +49 731 550194-014 Fax: +49 731 550194-026 email: sales@ulm-photonics.de www.ulm-photonics.de