© Semiconductor Components Industries, LLC, 2012
August, 2012 Rev. 1
1Publication Order Number:
2N2222A/D
2N2222A
Small Signal Switching
Transistor
NPN Silicon
Features
MILPRF19500/255 Qualified
Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic Symbol Value Unit
CollectorEmitter Voltage VCEO 50 Vdc
CollectorBase Voltage VCBO 75 Vdc
EmitterBase Voltage VEBO 6.0 Vdc
Collector Current Continuous IC800 mAdc
Total Device Dissipation @ TA = 25°C PT500 mW
Total Device Dissipation @ TC = 25°C PT1.0 W
Operating and Storage Junction
Temperature Range
TJ, Tstg 65 to
+200
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 325 °C/W
Thermal Resistance, Junction to Case RqJC 150 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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COLLECTOR
3
2
BASE
1
EMITTER
TO18
CASE 206AA
STYLE 1
Device Package Shipping
ORDERING INFORMATION
JAN2N2222A
JANTX2N2222A TO18 Bulk
JANTXV2N2222A
2N2222A
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 10 mAdc)
V(BR)CEO 50 Vdc
CollectorBase Cutoff Current
(VCB = 75 Vdc)
(VCB = 60 Vdc)
ICBO
10
10
mAdc
nAdc
EmitterBase Cutoff Current
(VEB = 6.0 Vdc)
(VEB = 4.0 Vdc)
IEBO
10
10
mAdc
nAdc
CollectorEmitter Cutoff Current
(VCE = 50 Vdc)
ICES 50 nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
hFE 50
75
100
100
30
325
300
CollectorEmitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
0.3
1.0
Vdc
BaseEmitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat) 0.6
1.2
2.0
Vdc
SMALLSIGNAL CHARACTERISTICS
Magnitude of SmallSignal Current Gain
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
|hfe|
2.5
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1 kHz)
hfe 50
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz)
Cibo 25
pF
Output Capacitance
(VCB = 10 Vdc, IE = 0,100 kHz f 1.0 MHz )
Cobo 8.0
pF
SWITCHING (SATURATED) CHARACTERISTICS
TurnOn Time
(Reference Figure in MILPRF19500/255)
ton 35 ns
TurnOff Time
(Reference Figure in MILPRF19500/255)
toff 300 ns
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
2N2222A
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3
PACKAGE DIMENSIONS
TO18 3
CASE 206AA
ISSUE A
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
SEATING
PLANE
RF
B
C
K
L
P
D3X
M
H
J
S
B0.007 (0.18MM) C M
A
N
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A0.209 0.2305.31 5.84
B0.178 0.1954.52 4.95
C0.170 0.2104.32 5.33
D0.016 0.0210.41 0.53
E--- 0.030--- 0.76
F0.016 0.0190.41 0.48
N0.100 BSC2.54 BSC
H0.036 0.0460.91 1.17
J0.028 0.0480.71 1.22
K0.500 0.75012.70 19.05
L0.250 ---6.35 ---
M45 BSC45 BSC
R0.054 BSC1.37 BSC
P--- 0.050--- 1.27
__
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN
SIONS A, B, AND T.
T--- 0.030--- 0.76
U0.100 ---2.54 ---
A
B
A
DETAIL X
U
NOTE 5
NOTES 4 & 6
C
U
E
2
31
DETAIL X
NOTE 7
T
LEAD IDENTIFICATION
DETAIL
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2N2222A/D
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