2N2221 2N2222 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221 and 2N2222 are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VCBO VCEO UNITS V 30 V 5.0 V 800 mA PD PD 500 mW 1.2 W -65 to +200 C Thermal Resistance TJ, Tstg JA 350 C/W Thermal Resistance JC 146 C/W MAX 10 UNITS nA Continuous Collector Current Power Dissipation Power Dissipation (TC=25C) Operating and Storage Junction Temperature ELECTRICAL SYMBOL ICBO ICBO VEBO IC 60 CHARACTERISTICS: (TA=25C unless otherwise noted) TEST CONDITIONS MIN VCB=50V VCB=50V, TA=150C - 10 A - 10 nA IC=10A 60 - V IC=10mA 30 - V BVEBO IE=10A 5.0 - V VCE(SAT) IC=150mA, IB=15mA IC=500mA, IB=50mA - 0.4 V - 1.6 V IC=150mA, IB=15mA IC=500mA, IB=50mA 0.6 1.3 V - 2.6 V 250 - MHz Cob VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=100kHz - 8.0 pF Cib VEB=0.5V, IC=0, f=100kHz - 30 pF IEBO VEB=3.0V BVCBO BVCEO VCE(SAT) VBE(SAT) VBE(SAT) fT R2 (24-July 2013) 2N2221 2N2222 SILICON NPN TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25C unless otherwise noted) 2N2221 2N2222 SYMBOL TEST CONDITIONS MIN MAX MIN MAX hFE VCE=10V, IC=0.1mA 20 35 hFE VCE=10V, IC=1.0mA 25 50 hFE IC=10mA 35 - 75 15 - 35 - 40 120 100 300 hFE IC=10mA, TA=-55C VCE=10V, IC=150mA VCE=1.0V, IC=150mA 20 - 50 - hFE VCE=10V, IC=500mA 25 - 40 - hFE hFE VCE=10V, VCE=10V, - TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (24-July 2013) w w w. c e n t r a l s e m i . c o m