2007-04-26
1
BFS466L6
1
2
3
4
5
6
NPN Silicon RF TWIN Transistor*
• Low voltage/ low current applications
• Ideal for VCO modules and low noise amplifiers
• World's smallest SMD 6-pin leadless package
• Built in 2 transitors (TR1: die as BFR460L3,
TR2: die as BFR360L3)
• Low noise figure: TR1: 1.1dB at 1.8 GHz
TR2: 1.0 dB at 1.8 GHz
• TR1 with excellent ESD performance
typical value > 1500 V (HBM)
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
* Short term description
6 4
6 4
!
"#$
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFS466L6 AC 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1
1Pb-containing package may be available upon special request
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BFS466L6
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
TR1, TA > 0 °C
TR1, TA ≤ 0 °C
TR2, TA > 0 °C
TR2, TA ≤ 0 °C
VCEO
4.5
4.2
6
6
V
Collector-emitter voltage
TR1
TR2
VCES
15
15
Collector-base voltage
TR1
TR2
VCBO
15
15
Emitter-base voltage
TR1
TR2
VEBO
1.5
2
Collector current
TR1
TR2
IC
50
35
mA
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BFS466L6
Maximum Ratings
Parameter Symbol Value Unit
Base current
TR1
TR2
IB
5
4
mA
Total power dissipation1)
TR1, TS ≤ 104°C
TR2, TS ≤ 102°C
Ptot
200
210
mW
Junction temperature
TR1
TR2
Tj
150
150
°C
Ambient temperature
TR1
TR2
TA
-65 ... 150
-65 ... 150
Storage temperature
TR1
TR2
Tstg
-65 ... 150
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2)
TR1
TR2
RthJS
≤ 230
≤ 230
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
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BFS466L6
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
TR1, IC = 1 mA, IB = 0
TR2, IC = 1 mA, IB = 0
V(BR)CEO
4.5
6
5
9
-
-
V
Collector-emitter cutoff current
TR1, VCE = 15 V, VBE = 0
TR2, VCE = 15 V, VBE = 0
ICES
-
-
-
-
10
10
µA
Collector-base cutoff current
TR1, VCB = 5 V, IE = 0
TR2, VCB = 5 V, IE = 0
ICBO
-
-
-
-
100
100
nA
Emitter-base cutoff current
TR1, VEB = 0,5 V, IC = 0
TR2, VEB = 1 V, IC = 0
IEBO
-
-
-
-
1
1
µA
DC current gain
TR1, IC = 20 mA, VCE = 3 V, Pulse measured
TR2, IC = 15 mA, VCE = 3 V, Pulse measured
hFE
90
90
120
120
160
160
-
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BFS466L6
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
TR1, IC = 30 mA, VCE = 3 V, f = 1 GHz
TR2, IC = 15 mA, VCE = 3 V, f = 1 GHz
fT
16
11
22
14
-
-
GHz
Collector-base capacitance
TR1, VCB = 3 V, f = 1 MHz, VBE = 0 ,
emitter grounded
TR2, VCB = 5 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb
-
-
0.29
0.26
0.45
0.4
pF
Collector emitter capacitance
TR1, VCE = 3 V, f = 1 MHz, VBE = 0 ,
base grounded
TR2, VCE = 5 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce
-
-
0.14
0.14
-
-
Emitter-base capacitance
TR1, VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
TR2, VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb
-
-
0.54
0.43
-
-
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BFS466L6
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Noise figure
TR1, IC=5mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt
TR1, IC=5mA, VCE = 3 V, f = 3 GHz, ZS = ZSopt
TR2, IC=3mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt
TR2, IC=3mA, VCE = 3 V, f = 3 GHz, ZS = ZSopt
F
-
-
-
-
1.1
1.4
1
1.4
-
-
-
-
dB
Power gain, maximum available1)
TR1, IC = 20 mA, VCE = 3 V, ZS=ZSopt, ZL=ZLopt,
f = 1.8 GHz
TR1, IC = 20 mA, VCE = 3 V, ZS=ZSopt, ZL=ZLopt,
f = 3 GHz
TR2, IC = 15 mA, VCE = 3 V, ZS=ZSopt, ZL=ZLopt,
f = 1.8 GHz
TR2, IC = 15 mA, VCE = 3 V, ZS=ZSopt, ZL=ZLopt,
f = 3 GHz
Gma
-
-
-
-
17
12
16.5
11.5
-
-
-
-
Transducer gain
TR1, IC = 20 mA, VCE = 3 V, ZS = ZL = 50Ω,
f = 1.8GHz
TR1, IC = 20 mA, VCE = 3 V, ZS = ZL = 50Ω,
f = 3GHz
TR2, IC = 15 mA, VCE = 3 V, ZS = ZL = 50Ω,
f = 1.8GHz
TR2, IC = 15 mA, VCE = 3 V, ZS = ZL = 50Ω,
f = 3GHz
|S21e|2
-
-
-
-
14.5
10
13.5
9.5
-
-
-
-
Third order intercept point at output 2)
TR1, VCE=3V, IC=20mA, ZS=ZL=50Ω,
f=1.8GHz
TR2, VCE=3V, IC=15mA, ZS=ZL=50Ω,
f=1.8GHz
IP3
-
-
28
24.5
-
-
dBm
1dB Compression point, at output
TR1, IC=20mA, VCE=3V, ZS=ZL=50Ω,
f=1.8GHz
TR1, IC=15mA, VCE=3V, ZS=ZL=50Ω,
f=1.8GHz
P-1dB
-
-
12
9
-
-
1Gma = |S21e / S12e| (k-(k²-1)1/2)
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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BFS466L6
Package TSLP-6-1
123
4
5
6
1) Dimension applies to plated terminal
0.05 MAX.
0.4
+0.1
±0.035
4x
0.15
1)
4x0.23
±0.0351)
2x
0.23
±0.035
0.87
±0.05
1.2
±0.05
1)
±0.035
2x
0.35
±0.05
0.8
±0.05
0.55
±0.05
0.45
1)
5
2
6
4
1
3
Top view Bottom view
Pin 1 marking
0.22
0.76
0.8
1.12
0.25
0.25
R0.125
0.29
Stencil apertures
Only 100 µm stencil thickness
recommended
Copper Solder mask
1.12
0.18
0.25
0.37
0.25
0.25
0.185
0.185
0.25
0.8
BFS360L6
Type code
Pin 1 marking
Laser marking
1.05
4
1.45
0.5
Pin 1
marking
8
Reel ø180 mm = 15.000 Pieces/Reel
For board assembly information please refer to Infineon website "Packages"
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
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BFS466L6
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office ( www.infineon.com).
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.