© 2007 Microchip Technology Inc. DS21936C-page 1
MCP1726
Features
• 1A Output Current Capability
• Input Operating Voltage Range: 2.3V to 6.0V
• Adjustable Output Voltage Range: 0.8V to 5.0V
• Standard Fixed Output Voltages:
- 0.8V, 1.2V, 1.8V, 2.5V, 3.3V, 5.0V
• Low Dropout Voltage: 220 mV Typical at 1A
• Typical Output Voltage Tolerance: 0.4%
• Stable with 1.0 µF Ceramic Output Capacitor
• Fast response to Load Transients
• Low Supply Current: 140 µA (typ)
• Low Shutdown Supply Current: 0.1 µA (typ)
• Adjustable Delay on Power Good Output
• Short Circuit Current Limiting and
Overtemperature Protection
• 3x3 DFN-8 and SOIC-8 Package Options
Applications
• High-Speed Driver Chipset Power
• Networking Backplane Cards
• Notebook Computers
• Network Interface Cards
• Palmtop Computers
• 2.5V to 1.XV Regulators
Description
The MCP1726 is a 1A Low Dropout (LDO) linear
regulator that provides high current and low output
voltages in a very small package. The MCP1726
comes in a fixed (or adjustable) output voltage version,
with an output voltage range of 0.8V to 5.0V. The 1A
output current capability, combined with the low output
voltage capability, make the MCP1726 a good choice
for new sub-1.8V output voltage LDO applications that
have high current demands.
The MCP1726 is stable using ceramic output
capacitors that inherently provide lower output noise
and reduce the size and cost of the entire regulator
solution. Only 1 µF of output capacitance is needed to
stabilize the LDO.
Using CMOS construction, the quiescent current
consumed by the MCP1726 is typically less than
140 µA over the entire input voltage range, making it
attractive for portable computing applications that
demand high output current. When shut down, the
quiescent current is reduced to less than 0.1 µA.
The scaled-down output voltage is internally monitored
and a power good (PWRGD) output is provided when
the output is within 92% of regulation (typical). An
external capacitor can be used on the CDELAY pin to
adjust the delay from 1 ms to 300 ms.
The overtemperature and short circuit current-limiting
provide additional protection for the LDO during system
fault conditions.
Package Types
VIN
VIN
SHDN
GND PWRGD
CDELAY
VOUT
VOUT
VIN
VIN
SHDN
GND PWRGD
CDELAY
ADJ
VOUT
Adjustable (SOIC-8) Fixed (SOIC-8)
VIN
VIN
SHDN
GND PWRGD
CDELAY
VOUT
VOUT
11
22
33
44
55
66
77
88
Fixed (3x3 DFN)
VIN
VIN
SHDN
GND PWRGD
CDELAY
VOUT
Adjustable (3x3 DFN)
ADJ
1
2
3
45
6
7
81
2
3
45
6
7
8
1A, Low Voltage, Low Quiescent Current LDO Regulator
MCP1726
DS21936C-page 2 © 2007 Microchip Technology Inc.
Typical Application
MCP1726 Adjustable Output Voltage
VIN
SHDN
GND PWRGD
CDELAY
ADJ
VOUT
1
2
3
45
6
7
8
1µF
PWRGD
VOUT = 1.2V @ 1A
100 kΩ
4.7 µF
VIN = 2.3V to 2.8V
On
Off
VIN
20 kΩ
40 kΩ
R1
R2
C1C2
R3
1000 pF
C3
MCP1726 Fixed Output Voltage
VIN
SHDN
GND PWRGD
CDELAY
VOUT
VOUT
1
2
3
45
6
7
8
PWRGD
VOUT = 1.8V @ 1A
VIN = 2.3V to 2.8V
On
Off
VIN
1µF
100 kΩ
4.7 µF
C1C2
R1
1000 pF
C3
© 2007 Microchip Technology Inc. DS21936C-page 3
MCP1726
Functional Block Diagram
EA
+
–
VOUT
PMOS
Rf
Cf
ISNS
Overtemperature
VREF
Comp
92% of VREF
TDELAY
PWRGD
CDELAY
VIN
Driver w/limit
and SHDN
GND
Soft-Start
ADJ
Undervoltage
Lock Out
VIN
Reference
SHDN
SHDN
SHDN
Sensing
(UVLO)
MCP1726
DS21936C-page 4 © 2007 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VIN ....................................................................................6.5V
Maximum Voltage on Any Pin .. (GND – 0.3V) to (VDD + 0.3)V
Maximum Junction Temperature, TJ...........................+150°C
Maximum Power Dissipation......... Internally-Limited (Note 6)
Storage temperature .....................................-65°C to +150°C
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, VIN = (VR + 0.5V) or 2.3V, whichever is greater, IOUT = 1 mA,
CIN = COUT = 4.7 µF (X7R Ceramic), TA = +25°C. Boldface type applies for junction temperatures, TJ (Note 7) of -40°C to +125°C
Parameters Sym Min Typ Max Units Conditions
Input Operating Voltage VIN 2.3 6.0 VNote 1
Input Quiescent Current Iq—140220 µA IL = 0 mA, VIN = VR +0.5V,
VOUT = 0.8V to 5.0V
Input Quiescent Current for
SHDN Mode
ISHDN —0.1 3µA SHDN = GND
Maximum Output Current IOUT 1——AV
IN = 2.3V to 6.0V (Note 1)
Line Regulation ΔVOUT/
(VOUT x ΔVIN)
—0.050.3 %/V (VR + 0.5)V ≤ VIN ≤ 6V
Load Regulation ΔVOUT/VOUT -1.5 ±0.5 1.5 %I
OUT = 1 mA to 1A,
VIN = (VR + 0.6)V (Note 4)
Output Short Circuit Current IOUT_SC —1.7 — AV
IN = (VR + 0.5)V,
RLOAD <0.1Ω, Peak Current
Adjust Pin Characteristics
Adjust Pin Reference Voltage VADJ 0.402 0.410 0.418 VV
IN = 2.3V to VIN =6.0V,
IOUT = 1 mA
Adjust Pin Leakage Current IADJ -10 ±0.01 +10 nA VIN = 6.0V, VADJ =0Vto6V
Adjust Temperature Coefficient TCVOUT —40 —ppm/°CNote 3
Fixed-Output Characteristics
Voltage Regulation VOUT VR - 2.5% VR ±0.5% VR + 2.5% VNote 2
Dropout Characteristics
Dropout Voltage VIN-VOUT —220500 mV IOUT = 1A, VIN(MIN) =2.3V
(Note 5)
Note 1: The minimum VIN must meet two conditions: VIN ≥ 2.3V and VIN ≥ (VR + 2.5%) + VDROPOUT.
2: VR is the nominal regulator output voltage for the fixed cases. VR = 1.2V, 1.8V, etc. VR is the desired set point output
voltage for the adjustable cases. VR = VADJ * ((R1/R2)+1). Figure 4-1.
3: TCVOUT = (VOUT-HIGH – VOUT-LOW) *106 / (VR * ΔTemperature). VOUT-HIGH is the highest voltage measured over the
temperature range. VOUT-LOW is the lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is
tested over a load range from 1 mA to the maximum specified output current.
5: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its
nominal value that was measured with an input voltage of VIN = VR + 0.5V.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air. (i.e., TA, TJ, θJA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 125°C can impact device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired junction temperature. The test time is small enough such that the rise in the junction temperature over the
ambient temperature is not significant.
© 2007 Microchip Technology Inc. DS21936C-page 5
MCP1726
Power Good Characteristics
Input Voltage Operating Range
for Valid PWRGD
VPWRGD_VIN 1.0 — 6.0 V TA = +25°C
1.2 —6.0 TA = -40°C to +125°C
ISINK = 100 µA
PWRGD Threshold Voltage
(Referenced to VOUT)
PWRGD_THF 88 92 96 %V
OUT < 2.5V, Falling Edge
89 92 95 %V
OUT > 2.5V, Falling Edge
PWRGD_THR 89 94 98 %V
OUT < 2.5V, Rising Edge
90 93 96 %V
OUT > 2.5V, Rising Edge
PWRGD Output Voltage Low VPWRGD_L —0.20.4 VI
PWRGD SINK = 1.2 mA
PWRGD Leakage PWRGD_LK —0.1 — µAV
PWRGD = VIN = 6.0V
PWRGD Time Delay TPG —200 — µsC
DELAY = OPEN
10 30 55 ms CDELAY =0.01µF
—300 — msC
DELAY =0.1µF
Detect Threshold to PWRGD
Active Time Delay
TVDET-PWRGD —170 — µs
Shutdown Input
Logic-High Input VSHDN-HIGH 45 %VIN VIN = 2.3V to 6.0V
Logic-Low Input VSHDN-Low 15 %VIN VIN = 2.3V to 6.0V
SHDN Input Leakage Current SHDNILK -0.1 ±0.001 +0.1 µA VIN = 6V, SHDN =VIN,
SHDN = GND
AC Performance
Output Delay From SHDN TOR 100 µs SHDN = GND to VIN
VOUT = GND to 95% VR
Output Noise eN—2.0 —µV/√Hz IOUT = 200 mA, f = 1 kHz,
COUT = 1 µF (X7R Ceramic),
VOUT = 2.5V
Power Supply Ripple Rejection
Ratio
PSRR — 54 — dB f = 100 Hz, COUT = 10 µF,
IOUT = 100 mA,
VINAC = 30 mV pk-pk,
CIN = 0 µF
Thermal Shutdown Temperature TSD —150 — °CI
OUT = 100 µA,
VOUT = 1.8V, VIN = 2.8V
Thermal Shutdown Hysteresis ΔTSD —10 — °CI
OUT = 100 µA,
VOUT = 1.8V, VIN = 2.8V
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, VIN = (VR + 0.5V) or 2.3V, whichever is greater, IOUT = 1 mA,
CIN = COUT = 4.7 µF (X7R Ceramic), TA = +25°C. Boldface type applies for junction temperatures, TJ (Note 7) of -40°C to +125°C
Parameters Sym Min Typ Max Units Conditions
Note 1: The minimum VIN must meet two conditions: VIN ≥ 2.3V and VIN ≥ (VR + 2.5%) + VDROPOUT.
2: VR is the nominal regulator output voltage for the fixed cases. VR = 1.2V, 1.8V, etc. VR is the desired set point output
voltage for the adjustable cases. VR = VADJ * ((R1/R2)+1). Figure 4-1.
3: TCVOUT = (VOUT-HIGH – VOUT-LOW) *106 / (VR * ΔTemperature). VOUT-HIGH is the highest voltage measured over the
temperature range. VOUT-LOW is the lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is
tested over a load range from 1 mA to the maximum specified output current.
5: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its
nominal value that was measured with an input voltage of VIN = VR + 0.5V.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air. (i.e., TA, TJ, θJA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 125°C can impact device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired junction temperature. The test time is small enough such that the rise in the junction temperature over the
ambient temperature is not significant.
MCP1726
DS21936C-page 6 © 2007 Microchip Technology Inc.
TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise indicated, all limits apply for VIN = 2.3V to 6.0V.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Operating Junction Temperature Range TJ-40 — +125 °C Steady State
Maximum Junction Temperature TJ— — +150 °C Transient
Storage Temperature Range TA-65 — +150 °C
Thermal Package Resistances
Thermal Resistance, 8LD 3x3 DFN θJA — 41 — °C/W 4-Layer JC51-7
Standard Board with
vias
Thermal Resistance, 8LD SOIC θJA — 150 — °C/W 4-Layer JC51-7
Standard Board
© 2007 Microchip Technology Inc. DS21936C-page 7
MCP1726
2.0 TYPICAL PERFORMANCE CURVES
NOTE: Unless otherwise indicated, VIN = VOUT + 0.5V, IOUT = 1 mA and TA = +25°C.
FIGURE 2-1: Quiescent Current vs. Input
Voltage (1.2V Adjustable).
FIGURE 2-2: Ground Current vs. Load
Current (1.2V Adjustable).
FIGURE 2-3: Quiescent Current vs.
Junction Temperature (1.2V Adjustable).
FIGURE 2-4: Line Regulation vs.
Temperature (1.2V Adjustable).
FIGURE 2-5: Load Regulation vs.
Temperature.
FIGURE 2-6: Adjust Pin Voltage vs.
Temperature.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
100
110
120
130
140
150
160
170
180
2.32.83.33.84.34.85.35.8
Input Voltage (V)
Quiescent Current (µA)
-40ºC
+125°C
+25°C
VR = 1.2V (Adj.)
IOUT = 0 mA
120
140
160
180
200
220
240
260
280
300
0 200 400 600 800 1000
Load Current (mA)
Ground Current (µA)
VIN = 2.5V
VIN = 3.3V
VR = 1.2V (Adj.)
100
110
120
130
140
150
160
-40
-25
-10
5
20
35
50
65
80
95
110
125
Temperature (°C)
Quiescent Current (µA)
VIN = 2.5V
VIN = 5.0V
VIN = 3.3V
VR = 1.2V (Adj.)
IOUT = 0 mA
-0.02
-0.01
0
0.01
0.02
0.03
0.04
0.05
-40
-25
-10
5
20
35
50
65
80
95
110
125
Temperature (°C)
Line Regulation (%/V)
IOUT = 1A
IOUT = 500 mA
IOUT = 100 mA
IOUT = 1 mA
VR = 1.2V (Adj.)
VIN
= 2.3V to 6.0V
0.10
0.20
0.30
0.40
0.50
0.60
0.70
-40
-25
-10
5
20
35
50
65
80
95
110
125
Temperature (°C)
Load Regulation (%)
VR = 0.8V
VR = 1.8V
VR = 3.3V
VR = 5.0V
VIN = VR + 0.6V (or 2.3V)
IOUT = 1 mA to 1A
408.50
409.00
409.50
410.00
410.50
411.00
-40
-25
-10
5
20
35
50
65
80
95
110
125
Temperature (°C)
Adjust Pin Voltage (mV)
VIN = 6.0V
VIN = 2.3V
IOUT = 1 mA
MCP1726
DS21936C-page 8 © 2007 Microchip Technology Inc.
NOTE: Unless otherwise indicated, VIN = VOUT + 0.5V, IOUT = 1 mA and TA = +25°C.
FIGURE 2-7: Dropout Voltage vs. Output
Current (Adjustable Version).
FIGURE 2-8: Dropout Voltage vs.
Temperature (Adjustable Version).
FIGURE 2-9: Power Good (PWRGD)
Time Delay vs. Temperature.
FIGURE 2-10: Quiescent Current vs. Input
Voltage (0.8V Fixed).
FIGURE 2-11: Quiescent Current vs. Input
Voltage (3.3V Fixed).
FIGURE 2-12: Ground Current vs. Load
Current.
0
25
50
75
100
125
150
175
200
225
250
0 200 400 600 800 1000
Output Current (mA)
Dropout Voltage (mV)
VOUT = 5.0V
VOUT = 2.5V
Adjustable Version
190
200
210
220
230
240
250
260
270
-40
-25
-10
5
20
35
50
65
80
95
110
125
Temperature (°C)
Dropout Voltage (mV)
VOUT = 5.0V
VOUT =2.5V
VOUT = 3.3V
Adjustable Version
IOUT = 1A
20
22
24
26
28
30
32
-40
-25
-10
5
20
35
50
65
80
95
110
125
Temperature (°C)
Power Good Time Delay (ms)
VIN =2.3V
VIN =5.5V
VIN =3.0V
CDELAY = 10 nF
100
110
120
130
140
150
160
170
180
2.3
2.6
2.9
3.2
3.5
3.8
4.1
4.4
4.7
5.0
5.3
5.6
5.9
Input Voltage (V)
Quiescent Current (µA)
+25°C
-40°C
+125°C
+90°C
VOUT = 0.8V
IOUT = 0 mA
0
100
200
300
400
500
600
700
800
2.3 2.6 2.9 3.2 3.5 3.8 4.1 4.4 4.7 5.0 5.3 5.6 5.9
Input Voltage (V)
Quiescent Current (µA)
+125°C
+25°C
-40°C
VOUT =3.3V
IOUT = 0 mA
120
140
160
180
200
220
240
260
280
300
320
340
0 200 400 600 800 1000
Load Current (mA)
Ground Current (µA)
VOUT =3.3V
VOUT =0.8V
VIN =
2.3V for 0.8V device
© 2007 Microchip Technology Inc. DS21936C-page 9
MCP1726
NOTE: Unless otherwise indicated, VIN = VOUT + 0.5V, IOUT = 1 mA and TA = +25°C.
FIGURE 2-13: Quiescent Current vs.
Temperature.
FIGURE 2-14: ISHDN vs. Temperature.
FIGURE 2-15: Line Regulation vs.
Temperature (0.8V Fixed)
FIGURE 2-16: Line Regulation vs.
Temperature (3.3V Fixed).
FIGURE 2-17: Load Regulation vs.
Temperature (VOUT < 2.5V Fixed).
FIGURE 2-18: Load Regulation vs.
Temperature (VOUT
≥
2.5V Fixed).
100
110
120
130
140
150
160
170
-40
-25
-10
5
20
35
50
65
80
95
110
125
Temperature (°C)
Quiescent Current (µA)
VOUT =0.8V
VOUT =3.3V
IOUT = 0 mA
VIN = 2.3V for 0.8V Device
0
10
20
30
40
50
60
70
80
90
100
-40
-25
-10
5
20
35
50
65
80
95
110
125
Temperature (°C)
ISHDN (nA)
VIN =6.0V
VIN =3.3V
VIN =2.3V
-0.025
-0.02
-0.015
-0.01
-0.005
0
0.005
0.01
0.015
-40
-25
-10
5
20
35
50
65
80
95
110
125
Temperature (°C)
Line Regulation (%/V)
IOUT =1.0A
IOUT =500 mA
IOUT =100 mA
IOUT =10 mA
VOUT = 0.8V
-0.01
-0.005
0
0.005
0.01
0.015
0.02
0.025
-40
-25
-10
5
20
35
50
65
80
95
110
125
Temperature (°C)
Line Regulation (%/V)
IOUT =500 mA
IOUT =1 mA
IOUT =1A
IOUT =100 mA
VOUT = 3.3V
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
-40
-25
-10
5
20
35
50
65
80
95
110
125
Temperature (°C)
Load Regulation (%)
VOUT =1.2V
VOUT =0.8V
VOUT =1.8V
IOUT = 1 mA to 1000 mA
VIN = 2.3V
-0.70
-0.65
-0.60
-0.55
-0.50
-0.45
-0.40
-0.35
-0.30
-0.25
-0.20
-40
-25
-10
5
20
35
50
65
80
95
110
125
Temperature (°C)
Load Regulation (%)
VOUT =5.0V VOUT =3.3V
VOUT =2.5V
IOUT = 1 mA to 1000 mA
VIN = VOUT + 0.6V
MCP1726
DS21936C-page 10 © 2007 Microchip Technology Inc.
NOTE: Unless otherwise indicated, VIN = VOUT + 0.5V, IOUT = 1 mA and TA = +25°C.
FIGURE 2-19: Dropout Voltage vs. Load
Current.
FIGURE 2-20: Dropout Voltage vs.
Temperature.
FIGURE 2-21: Short Circuit Current vs.
Input Voltage.
FIGURE 2-22: Output Noise Voltage
Density vs. Frequency.
FIGURE 2-23: Power Supply Ripple
Rejection (PSRR) vs. Frequency (VOUT = 1.2V
Adj.).
FIGURE 2-24: Power Supply Ripple
Rejection (PSRR) vs. Frequency (VOUT = 1.2V
Adj.).
0
25
50
75
100
125
150
175
200
225
250
0 200 400 600 800 1000
Load Current (mA)
Dropout Voltage (mV)
VOUT =5.0V
VOUT =2.5V
180
190
200
210
220
230
240
250
260
270
-40
-25
-10
5
20
35
50
65
80
95
110
125
Temperature (°C)
Dropout Voltage (mV)
VOUT =5.0V
VOUT =2.5V
VOUT =3.3V
IOUT = 1A
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
2.3 2.6 2.9 3.2 3.5 3.8 4.1 4.4 4.7 5.0 5.3 5.6 5.9
Input Voltage (V)
Short Circuit Current (A)
VOUT =1.2V (Fixed)
0.01
0.1
1
10
0.01 0.1 1 10 100 1000
Frequency (kHz)
Noise (µVHz)
VOUT =2.5V (Adj)
IOUT = 200 mA
VOUT =0.8V (Fixed)
IOUT = 100 mA
COUT =1 µF
CIN = 10 µF
0
10
20
30
40
50
60
70
80
0.01 0.1 1 10 100 1000
Frequency (kHz)
PSRR (dB)
COUT =10 µF
CIN = 0 µF
IOUT = 100 mA
VOUT
= 1.2
V
VIN
= 2.5
V
0
10
20
30
40
50
60
70
80
90
0.01 0.1 1 10 100 1000
Frequency (kHz)
PSRR (dB)
COUT =22 µF
CIN = 0 µF
IOUT = 100 mA
VOUT
= 1.2V
VIN
= 2.5V
© 2007 Microchip Technology Inc. DS21936C-page 11
MCP1726
NOTE: Unless otherwise indicated, VIN = VOUT + 0.5V, IOUT = 1 mA and TA = +25°C.
FIGURE 2-25: Power Supply Ripple
Rejection (PSRR) vs. Frequency (VOUT = 2.5V
Fixed).
FIGURE 2-26: Power Supply Ripple
Rejection (PSRR) vs. Frequency (VOUT = 2.5V
Fixed).
FIGURE 2-27: 2.5V (Adj.) Startup from VIN.
FIGURE 2-28: 2.5V (Adj.) Startup from
Shutdown.
FIGURE 2-29: Power Good (PWRGD)
Timing with CBYPASS of 1000 pF.
FIGURE 2-30: Power Good (PWRGD)
Timing with CBYPASS of 0.01 µF.
0
10
20
30
40
50
60
70
80
0.01 0.1 1 10 100 1000
Frequency (kHz)
PSRR (dB)
COUT =10 µF
CIN = 0 µF
IOUT = 100 mA
VOUT
= 2.5
V
VIN
= 3.3
V
0
10
20
30
40
50
60
70
80
0.01 0.1 1 10 100 1000
Frequency (kHz)
PSRR (dB)
COUT =22 µF
CIN = 0 µF
IOUT = 100 mA
VOUT
= 2.5
V
VIN
= 3.3
V
VOUT
VIN
PWRGD
VOUT
SHDN
PWRGD
VOUT
PWRGD
VIN
VOUT
VIN
PWRGD
MCP1726
DS21936C-page 12 © 2007 Microchip Technology Inc.
NOTE: Unless otherwise indicated, VIN = VOUT + 0.5V, IOUT = 1 mA and TA = +25°C.
FIGURE 2-31: Dynamic Line Response
(1.2V Fixed).
FIGURE 2-32: Dynamic Line Response
(2.5V Fixed).
FIGURE 2-33: Dynamic Load Response
(2.5V Fixed, 10 mA to 1000 mA).
FIGURE 2-34: Dynamic Load Response
(2.5V Fixed, 100 mA to 1000 mA).
VOUT
VIN
CIN = 1 µF
COUT = 10 µF
IOUT = 100 mA
3.3V
2.3V
VOUT
VIN
CIN = 1 µF
COUT = 10 µF
IOUT = 100 mA
4.5V
3.5V
VOUT
VIN
CIN = 47 µF
COUT = 10 µF
IOUT
VOUT
VIN
CIN = 47 µF
COUT = 10 µF
IOUT
© 2007 Microchip Technology Inc. DS21936C-page 13
MCP1726
3.0 PIN DESCRIPTION
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
3.1 Input Voltage Supply (VIN)
Connect the unregulated or regulated input voltage
source to VIN. If the input voltage source is located
several inches away from the LDO, or the input source
is a battery, it is recommended that an input capacitor
be used. A typical input capacitance value of 1 µF to
10 µF should be sufficient for most applications.
3.2 Shutdown Control Input (SHDN)
The SHDN input is used to turn the LDO output voltage
on and off. When the SHDN input is at a logic-high
level, the LDO output voltage is enabled. When the
SHDN input is pulled to a logic-low level, the LDO
output voltage is disabled. When the SHDN input is
pulled low, the PWRGD output also goes low and the
LDO enters a low quiescent current shutdown state
where the typical quiescent current is 0.1 µA.
3.3 Ground (GND)
Connect the GND pin of the LDO to a quiet circuit
ground. This will help the LDO power supply rejection
ratio and noise performance. The ground pin of the
LDO only conducts the quiescent current of the LDO
(typically 140 µA), so a heavy trace is not required.
3.4 Power Good Output (PWRGD)
The PWRGD output is an open-drain output used to
indicate when the LDO output voltage is within 92%
(typically) of its nominal regulation value. The PWRGD
output has a typical hysteresis value of 2% for the
adjustable voltage version and for voltage outputs less
than 2.5V. For fixed output voltage versions greater
than 2.5V, the hysteresis is 0.7%. The PWRGD output
is delayed on power-up by 200 µs (typical, no capaci-
tance on CDELAY pin). This delay time is controlled by
the CDELAY pin.
3.5 Power Good Delay Set-Point Input
(CDELAY)
The CDELAY input sets the power-up delay time for the
PWRGD output. By connecting an external capacitor
from the CDELAY pin to ground, the delay times for the
PWRGD output can be adjusted from 200 µs (no
capacitance) to 300 ms (0.1 µF capacitor). This allows
for the optimal setting of the system reset time.
3.6 Output Voltage Sense Input (ADJ)
The output voltage adjust pin (ADJ) for the adjustable
output voltage version of the MCP1726 allows the user
to set the output voltage of the LDO by using two
external resistors. The adjust pin voltage is 0.41V
(typical).
3.7 Regulated Output Voltage (VOUT)
The VOUT pin(s) is the regulated output voltage of the
LDO. A minimum output capacitance of 1.0 µF is
required for LDO stability. The MCP1726 is stable with
ceramic, tantalum and aluminum-electrolytic capaci-
tors. See Section 4.3 “Output Capacitor” for output
capacitor selection guidance.
3.8 Exposed Pad (EP)
The 3x3 DFN package has an exposed pad on the bot-
tom of the package. This pad should be soldered to the
Printed Circuit Board (PCB) to aid in the removal of
heat from the package during operation. The exposed
pad is at the ground potential of the LDO.
Pin No.
Fixed Output
Pin No.
Adjustable
Output
Name Description
11V
IN Input Voltage Supply
22V
IN Input Voltage Supply
3 3 SHDN Shutdown Control Input (active-low)
4 4 GND Ground
5 5 PWRGD Power Good Output
66C
DELAY Power Good Delay Set-Point Input
—7 ADJ Output Voltage Sense Input (adjustable version)
7—VOUT Regulated Output Voltage
88V
OUT Regulated Output Voltage
Exposed Pad Exposed Pad EP Exposed Pad of the DFN Package
MCP1726
DS21936C-page 14 © 2007 Microchip Technology Inc.
4.0 DEVICE OVERVIEW
The MCP1726 is a high output current, Low Dropout
(LDO) voltage regulator with an adjustable delay
power-good output and shutdown control input. The
low dropout voltage of 220 mV at 1A of current makes
it ideal for battery-powered applications. Unlike other
high output current LDOs, the MCP1726 only draws
220 µA of quiescent current at full load.
4.1 LDO Output Voltage
The MCP1726 LDO is available with either a fixed
output voltage or an adjustable output voltage. The
output voltage range is 0.8V to 5.5V for both versions.
4.1.1 ADJUST INPUT
The adjustable version of the MCP1726 uses the ADJ
pin (pin 7) to get the output voltage feedback for output
voltage regulation. This allows the user to set the out-
put voltage of the device with two external resistors.
The nominal voltage for ADJ is 0.41V.
Figure 4-1 shows the adjustable version of the
MCP1726. Resistors R1 and R2 form the resistor
divider network necessary to set the output voltage.
With this configuration, the equation for setting VOUT is:
EQUATION 4-1:
FIGURE 4-1: Typical adjustable output
voltage application circuit.
The allowable resistance value range for resistor R2 is
from 10 kΩ to 200 kΩ. Solving the equation for R1
yields the following equation:
EQUATION 4-2:
4.2 Output Current and Current
Limiting
The MCP1726 LDO is tested and ensured to supply a
minimum of 1A of output current. The MCP1726 has no
minimum output load, so the output load current can go
to 0 mA and the LDO will continue to regulate the
output voltage to within tolerance.
The MCP1726 also incorporates an output current limit.
If the output voltage falls below 0.7V due to an overload
condition (usually represents a shorted load condition),
the output current is limited to 1.7A (typical). If the over-
load condition is a soft overload, the MCP1726 will sup-
ply higher load currents of up to 3A. The MCP1726
should not be operated in this condition continuously as
it may result in failure of the device. However, this does
allow for device usage in applications that have higher
pulsed load currents having an average output current
value of 1A or less.
Output overload conditions may also result in an over-
temperature shutdown of the device. If the junction
temperature rises above 150°C, the LDO will shut
down the output voltage. See Section 4.9 “Overtem-
perature Protection” for more information on
overtemperature shutdown.
4.3 Output Capacitor
The MCP1726 requires a minimum output capacitance
of 1 µF for output voltage stability. Ceramic capacitors
are recommended because of their size, cost and
environmental robustness qualities.
Aluminum-electrolytic and tantalum capacitors can be
used on the LDO output as well. The Equivalent Series
Resistance (ESR) of the electrolytic output capacitor
must be no greater than 2 ohms. The output capacitor
should be located as close to the LDO output as is
practical. Ceramic materials X7R and X5R have low
temperature coefficients and are well within the accept-
able ESR range required. A typical 1 µF X7R 0805
capacitor has an ESR of 50 milli-ohms.
Larger LDO output capacitors can be used with the
MCP1726 to improve dynamic performance and power
supply ripple rejection performance. A maximum of
22 µF is recommended. Aluminum-electrolytic
capacitors are not recommended for low-temperature
applications of < -25°C.
VOUT VADJ
R1R2
+
R2
------------------
⎝⎠
⎛⎞
=
VOUT = LDO Output Voltage
VADJ = ADJ Pin Voltage (typically 0.41V)
VIN
SHDN
GND PWRGD
CDELAY
ADJ
VOUT
1
2
3
45
6
7
8
1µF
VOUT
4.7 µF
VIN
On
Off
VIN R1
R2
C1
C2
1000 pF
C3
MCP1726-ADJ
R1R2
VOUT VADJ
–
VADJ
--------------------------------
⎝⎠
⎛⎞
=
VOUT = LDO Output Voltage
VADJ = ADJ Pin Voltage (typically 0.41V)
© 2007 Microchip Technology Inc. DS21936C-page 15
MCP1726
4.4 Input Capacitor
Low input source impedance is necessary for the LDO
output to operate properly. When operating from
batteries, or in applications with long lead length
(> 10 inches) between the input source and the LDO,
some input capacitance is recommended. A minimum
of 1.0 µF to 4.7 µF is recommended for most
applications.
For applications that have output step load
requirements, the input capacitance of the LDO is very
important. The input capacitance provides the LDO
with a good local low-impedance source to pull the
transient currents from in order to respond quickly to
the output load step. For good step response
performance, the input capacitor should be of
equivalent (or higher) value than the output capacitor.
The capacitor should be placed as close to the input of
the LDO as is practical. Larger input capacitors will also
help reduce any high-frequency noise on the input and
output of the LDO and reduce the effects of any
inductance that exists between the input source
voltage and the input capacitance of the LDO.
4.5 Power Good Output (PWRGD)
The PWRGD output is used to indicate when the output
voltage of the LDO is within 92% (typical value, see the
Electrical Characteristics table for Min/Max specs) of its
nominal regulation value.
As the output voltage of the LDO rises, the PWRGD
output will be held low until the output voltage has
exceeded the power good threshold plus the hysteresis
value. Once this threshold has been exceeded, the
power good time delay is started (shown as TPG in the
Electrical Characteristics table). The power good time
delay is adjustable via the CDELAY pin of the LDO (see
Section 4.6 “CDELAY Input”). By placing a capacitor
from the CDELAY pin to ground, the power good time
delay can be adjusted from 200 µs (no capacitance) to
300 ms (0.1 µF capacitor). After the time delay period,
the PWRGD output will go high, indicating that the
output voltage is stable and within regulation limits.
If the output voltage of the LDO falls below the power
good threshold, the power good output will transition
low. The power good circuitry has a 170 µs delay when
detecting a falling output voltage, which helps to
increase noise immunity of the power good output and
avoid false triggering of the power good output during
fast output transients. See Figure 4-2 for power good
timing characteristics.
When the LDO is put into Shutdown mode using the
SHDN input, the power good output is pulled low
immediately, indicating that the output voltage will be
out of regulation. The timing diagram for the power
good output when using the shutdown input is shown in
Figure 4-3.
The power good output is an open-drain output that can
be pulled up to any voltage that is equal to or less than
the LDO input voltage. This output is capable of sinking
1.2 mA (VPWRGD < 0.4V maximum).
FIGURE 4-2: Power Good Timing.
FIGURE 4-3: Power Good Timing from
Shutdown.
4.6 CDELAY Input
The CDELAY input is used to provide the power-up delay
timing for the power good output, as discussed in the
previous section. By adding a capacitor from the CDE-
LAY pin to ground, the PWRGD power-up time delay
can be adjusted from 200 µs (no capacitance on CDE-
LAY) to 300 ms (0.1 µF of capacitance on CDELAY). See
the Electrical Characteristics table for CDELAY timing
tolerances.
TPG
TVDET_PWRGD
VPWRGD_TH
VOUT
PWRGD
VOL
VOH
VIN
SHDN
VOUT
30 ms 70 ms
TOR
PWRGD
TPG
MCP1726
DS21936C-page 16 © 2007 Microchip Technology Inc.
Once the power good threshold (rising) has been
reached, the CDELAY pin charges the external capacitor
to 1.5V (typical, this level can vary between 1.4V and
1.75V across the input voltage range of the part). The
PWRGD output will transition high when the CDELAY pin
voltage has charged to 0.42V. If the output falls below
the power good threshold limit during the charging time
between 0.0V and 0.42V on the CDELAY pin, the CDE-
LAY pin voltage will be pulled to ground, thus resetting
the timer. The CDELAY pin will be held low until the out-
put voltage of the LDO has once again risen above the
power good rising threshold. A timing diagram showing
CDELAY
, PWRGD and VOUT is shown in Figure 4-4.
FIGURE 4-4: CDELAY and PWRGD Timing
Diagram.
4.7 Shutdown Input (SHDN)
The SHDN input is an active-low input signal that turns
the LDO on and off. The SHDN threshold is a percent-
age of the input voltage. The typical value of this
shutdown threshold is 30% of VIN, with minimum and
maximum limits over the entire operating temperature
range of 45% and 15%, respectively.
The SHDN input will ignore low-going pulses (pulses
meant to shut down the LDO) that are up to 400 ns in
pulse width. If the shutdown input is pulled low for more
than 400 ns, the LDO will enter Shutdown mode. This
small bit of filtering helps to reject any system noise
spikes on the shutdown input signal.
On the rising edge of the SHDN input, the shutdown
circuitry has a 30 µs delay before allowing the LDO
output to turn on. This delay helps to reject any false
turn-on signals or noise on the SHDN input signal. After
the 30 µs delay, the LDO output enters its soft-start
period as it rises from 0V to its final regulation value. If
the SHDN input signal is pulled low during the 30 µs
delay period, the timer will be reset and the delay time
will start over again on the next rising edge of the
SHDN input. The total time from the SHDN input going
high (turn-on) to the LDO output being in regulation is
typically 100 µs. See Figure 4-5 for a timing diagram of
the SHDN input.
FIGURE 4-5: Shutdown Input Timing
Diagram.
4.8 Dropout Voltage and Undervoltage
Lockout
Dropout voltage is defined as the input-to-output
voltage differential at which the output voltage drops
2% below the nominal value that was measured with a
VR + 0.5V differential applied. The MCP1726 LDO has
a very low dropout voltage specification of 220 mV
(typical) at 1A of output current. See the Electrical
Characteristics table for maximum dropout voltage
specifications.
The MCP1726 LDO operates across an input voltage
range of 2.3V to 6.0V and incorporates input Undervolt-
age Lockout (UVLO) circuitry that keeps the LDO
output voltage off until the input voltage reaches a
minimum of 2.18V (typical) on the rising edge of the
input voltage. As the input voltage falls, the LDO output
will remain on until the input voltage level reaches
2.04V (typical).
Since the MCP1726 LDO undervoltage lockout
activates at 2.04V as the input voltage is falling, the
dropout voltage specification does not apply for output
voltages that are less than 1.9V.
For high-current applications, voltage drops across the
PCB traces must be taken into account. The trace
resistances can cause significant voltage drops
between the input voltage source and the LDO. For
applications with input voltages near 2.3V, these PCB
trace voltage drops can sometimes lower the input
voltage enough to trigger a shutdown due to
undervoltage lockout.
VOUT
TPG
VPWRGD_TH
CDELAY
CDELAY Threshold (0.42V)
PWRGD
0V
1.5V (typ)
SHDN
VOUT
30 µs 70 µs
TOR
400 ns (typ)
© 2007 Microchip Technology Inc. DS21936C-page 17
MCP1726
4.9 Overtemperature Protection
The MCP1726 LDO has temperature-sensing circuitry
to prevent the junction temperature from exceeding
approximately 150°C. If the LDO junction temperature
does reach 150°C, the LDO output will be turned off
until the junction temperature cools to approximately
140°C, at which point the LDO output will automatically
resume normal operation. If the internal power
dissipation continues to be excessive, the device will
again shut off. The junction temperature of the die is a
function of power dissipation, ambient temperature
and package thermal resistance. See Section 5.0
“Application Circuits/Issues” for more information
on LDO power dissipation and junction temperature.
MCP1726
DS21936C-page 18 © 2007 Microchip Technology Inc.
5.0 APPLICATION CIRCUITS/
ISSUES
5.1 Typical Application
The MCP1726 is used for applications that require high
LDO output current and a power good output.
FIGURE 5-1: Typical Application Circuit.
5.1.1 APPLICATION CONDITIONS
5.2 Power Calculations
5.2.1 POWER DISSIPATION
The internal power dissipation within the MCP1726 is a
function of input voltage, output voltage, output current
and quiescent current. The following equation can be
used to calculate the internal power dissipation for the
LDO.
EQUATION 5-1:
In addition to the LDO pass element power dissipation,
there is power dissipation within the MCP1726 as a
result of quiescent or ground current. The power dissi-
pation as a result of the ground current can be
calculated using the following equation:
EQUATION 5-2:
The total power dissipated within the MCP1726 is the
sum of the power dissipated in the LDO pass device
and the P(IGND) term. Because of the CMOS construc-
tion, the typical IGND for the MCP1726 is 140 µA.
Operating at a maximum of 3.63V results in a power
dissipation of 0.51 milli-Watts. For most applications,
this is small compared to the LDO pass device power
dissipation and can be neglected.
The maximum continuous operating junction tempera-
ture specified for the MCP1726 is +125°C. To estimate
the internal junction temperature of the MCP1726, the
total internal power dissipation is multiplied by the ther-
mal resistance from junction to ambient (RθJA) of the
device. The thermal resistance from junction to ambi-
ent for the 3x3DFN package is estimated at 41°C/W.
EQUATION 5-3:
Package Type = 3x3DFN8
Input Voltage Range = 3.3V ± 10%
VIN maximum = 3.63V
VIN minimum = 2.97V
VOUT typical = 2.5V
IOUT = 1.0A maximum
PLDO VIN MAX)()
VOUT MIN()
–()IOUT MAX)()
×=
PLDO = LDO Pass device internal power
dissipation
VIN(MAX) = Maximum input voltage
VOUT(MIN) = LDO minimum output voltage
PIGND()
VIN MAX()
IVIN
×=
PI(GND) = Power dissipation due to the
quiescent current of the LDO
VIN(MAX) = Maximum input voltage
IVIN = Current flowing in the VIN pin with no
LDO output current (LDO quiescent
current)
TJMAX()
PTOTAL RθJA
×TAMAX
+=
TJ(MAX) = Maximum continuous junction
temperature
PTOTAL = Total device power dissipation
RθJA = Thermal resistance from junction-to-
ambient
TAMAX = Maximum ambient temperature
© 2007 Microchip Technology Inc. DS21936C-page 19
MCP1726
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
EQUATION 5-4:
EQUATION 5-5:
EQUATION 5-6:
5.3 Typical Application
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
is calculated in the following example. The power dissi-
pation as a result of ground current is small enough to
be neglected.
5.3.1 POWER DISSIPATION EXAMPLE
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The
thermal resistance from junction to ambient (RθJA) is
derived from an EIA/JEDEC standard for measuring
thermal resistance for small surface-mount packages.
The EIA/JEDEC specification is JESD51-7 “High
Effective Thermal Conductivity Test Board for Leaded
Surface-Mount Packages”. The standard describes the
test method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT23 Can Dissipate in an Appli-
cation” (DS00792), for more information regarding this
subject.
PDMAX()
TJMAX()
TAMAX()
–()
RθJA
---------------------------------------------------=
PD(MAX) = Maximum device power dissipation
TJ(MAX) = maximum continuous junction
temperature
TA(MAX) = maximum ambient temperature
RθJA = Thermal resistance from junction-to-
ambient
TJRISE()
PDMAX()
RθJA
×=
TJ(RISE) = Rise in device junction temperature
over the ambient temperature
PD(MAX) = Maximum device power dissipation
RθJA = Thermal resistance from junction-to-
ambient
TJTJRISE()
TA
+=
TJ= Junction temperature
TJ(RISE) = Rise in device junction temperature
over the ambient temperature
TA= Ambient temperature
Package
Package Type = 3x3DFN
Input Voltage
VIN = 3.3V ± 10%
LDO Output Voltage and Current
VOUT =2.5V
IOUT =1.0A
Maximum Ambient Temperature
TA(MAX) =70°C
Internal Power Dissipation
PLDO(MAX) =(V
IN(MAX) – VOUT(MIN)) x IOUT(MAX)
PLDO = (3.3V x 1.1) – (0.975 x 2.5V))
x 1.0A
PLDO = 1.192 Watts
TJ(RISE) =P
TOTAL x RθJA
TJRISE = 1.192 W x 41.0° C/W
TJRISE =48.8°C
MCP1726
DS21936C-page 20 © 2007 Microchip Technology Inc.
Junction Temperature Estimate
To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated below:
As you can see from the result, this application will be
operating very near the maximum operating junction
temperature of 125°C. The PCB layout for this
application is very important as it has a significant
impact on the junction-to-ambient thermal resistance
(RθJA) of the 3x3 DFN package, which is very important
in this application.
Maximum Package Power Dissipation at
70°C Ambient Temperature
From this table you can see the difference in maximum
allowable power dissipation between the 3x3 DFN
package and the 8-pin SOIC package. This difference
is due to the exposed metal tab on the bottom of the
DFN package. The exposed tab of the DFN package
provides a very good thermal path from the die of the
LDO to the PCB. The PCB then acts like a heatsink,
providing more area to distribute the heat generated by
the LDO.
TJ=T
JRISE + TA(MAX)
TJ= 48.8°C + 70.0°C
TJ=118.8°C
3x3 DFN (41° C/W RθJA)
PD(MAX) = (125°C – 70°C) / 41° C/W
PD(MAX) = 1.34W
8LD SOIC (150°C/Watt RθJA)
PD(MAX) = (125°C – 70°C)/ 150° C/W
PD(MAX) = 0.366W
© 2007 Microchip Technology Inc. DS21936C-page 21
MCP1726
6.0 PACKAGING INFORMATION
6.1 Package Marking Information
8-Lead SOIC (150 mil) Example:
XXXXXXXX
XXXXYYWW
NNN
17260802E
SN ^^0543
256
8-Lead DFN (3x3) Example:
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
3
e
Voltage
Option Code
0.8V CAAA
1.2V CAAB
1.8V CAAC
2.5V CAAD
3.0V CAAE
3.3V CAAF
5.0V CAAG
Adj AADJ
CAAA
E543
256
XXXX
XYWW
NNN
MCP1726
DS21936C-page 22 © 2007 Microchip Technology Inc.
8-Lead Plastic Dual Fla t, No Lead Package (MF) – 3x3x0.9 mm Body [DFN]
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Package may have one or more exposed tie bars at ends.
3. Package is saw singulated.
4. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLIMETERS
Dimension Limits MIN NOM MAX
Number of Pins N 8
Pitch e 0.65 BSC
Overall Height A 0.80 0.90 1.00
Standoff A1 0.00 0.02 0.05
Contact Thickness A3 0.20 REF
Overall Length D 3.00 BSC
Exposed Pad Width E2 0.00 – 1.60
Overall Width E 3.00 BSC
Exposed Pad Length D2 0.00 – 2.40
Contact Width b 0.25 0.30 0.35
Contact Length L 0.20 0.30 0.55
Contact-to-Exposed Pad K 0.20 – –
BOTTOM VIEW
TOP VIEW
D
N
E
NOTE 1
12
EXPOSED PAD
b
e
N
L
E2
K
NOTE 1
D2
21
NOTE 2
A
A1
A3
Microchip Technology Drawing C04-062B
© 2007 Microchip Technology Inc. DS21936C-page 23
MCP1726
8-Lead Plastic Small Outline (SN) – Narrow, 3.90 mm Body [SOIC]
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. § Significant Characteristic.
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15 mm per side.
4. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLIMETERS
Dimension Limits MIN NOM MAX
Number of Pins N 8
Pitch e 1.27 BSC
Overall Height A – – 1.75
Molded Package Thickness A2 1.25 – –
Standoff §A1 0.10 – 0.25
Overall Width E 6.00 BSC
Molded Package Width E1 3.90 BSC
Overall Length D 4.90 BSC
Chamfer (optional) h 0.25 – 0.50
Foot Length L 0.40 – 1.27
Footprint L1 1.04 REF
Foot Angle φ0° – 8°
Lead Thickness c 0.17 – 0.25
Lead Width b 0.31 – 0.51
Mold Draft Angle Top α5° – 15°
Mold Draft Angle Bottom β5° – 15°
D
N
e
E
E1
NOTE 1
12 3
b
A
A1
A2
L
L1
c
h
h
φ
β
α
Microchip Technology Drawing C04-057B
MCP1726
DS21936C-page 24 © 2007 Microchip Technology Inc.
NOTES:
© 2007 Microchip Technology Inc. DS21936C-page 25
MCP1726
APPENDIX A: REVISION HISTORY
Revision C (August 2007)
The following is the list of modifications:
1. Added 3.0V option to Packing Marking section.
2. Updated package outline drawings.
3. Added 3.0V option to Product Identification
System (PIS) section.
Revision B (March 2005)
The following is the list of modifications:
1. Replaced 3x3 DFN package diagram.
2. Emphasized (bolded) a few specifications of
Section 1.0 “Electrical Characteristics” in the
DC Characteristics table.
Revision A (February 2005)
• Original Release of this Document.
MCP1726
DS21936C-page 26 © 2007 Microchip Technology Inc.
NOTES:
© 2007 Microchip Technology Inc. DS21936C-page 27
MCP1726
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Device MCP1726:1A, Low Quiescent Current LDO Regulator
Tape & Reel T = Tape and Reel
Blank = Tube
Standard Output
Voltage *
080 = 0.80V
120 = 1.20V
180 = 1.80V
250 = 2.50V
300 = 3.00V
330 = 3.30V
500 = 5.00V
ADJ = Adjustable Voltage Version
* Custom output voltages available upon request. Contact
your local Microchip sales office for more information.
Tolerance 2 = 2.0%
Temperature Range E = -40°C to +125°C
Package * SN = Plastic SOIC, (150 mil Body) 8-Lead
MF = Plastic Dual Flat No Lead, 3x3 mm Body (DFN),
8-Lead
*Both packages are Lead Free.
PART NO. XXX
PackageTemp.
Device
Examples:
a) MCP1726-0802E/MF: 0.8V, 1A LDO,
8LD DFN Pkg.
b) MCP1726-1202E/SN: 1.20V, 1A LDO,
8LD SOIC Pkg.
c) MCP1726T-1802E/MF:Tape and Reel, 1.80V,
1A LDO, 8LD DFN Pkg.
d) MCP1726-2502E/SN: 2.50V, 1A LDO,
8LD SOIC Pkg.
e) MCP1726-3002E/MF: 3.00V, 1A LDO,
8LD DFN Pkg.
f) MCP1726T-3302E/MF:Tape and Reel, 3.30V,
1A LDO, 8LD DFN Pkg.
g) MCP1726-5002E/SN: 5.00V, 1A LDO,
8LD SOIC Pkg.
h) MCP1726-ADJE/MF: Adjustable, , 1A LDO,
8LD DFN Pkg.
Range
X
Tolerance
-XXX
Voltage
Output
X
Tape &
Reel
MCP1726
DS21936C-page 28 © 2007 Microchip Technology Inc.
NOTES:
© 2007 Microchip Technology Inc. DS21936C-page 29
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
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conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, KEELOQ logo, microID, MPLAB, PIC,
PICmicro, PICSTART, PRO MATE, rfPIC and SmartShunt are
registered trademarks of Microchip Technology Incorporated
in the U.S.A. and other countries.
AmpLab, FilterLab, Linear Active Thermistor, Migratable
Memory, MXDEV, MXLAB, SEEVAL, SmartSensor and The
Embedded Control Solutions Company are registered
trademarks of Microchip Technology Incorporated in the
U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi,
MPASM, MPLAB Certified logo, MPLIB, MPLINK, PICkit,
PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal,
PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, Select
Mode, Smart Serial, SmartTel, Total Endurance, UNI/O,
WiperLock and ZENA are trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2007, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS21936C-page 30 © 2007 Microchip Technology Inc.
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