This is information on a product in full production.
October 2015 DocID022580 Rev 8 1/53
M95160 M95160-W
M95160-R M95160-DF
16-Kbit serial SPI bus EEPROM with high-speed clock
Datasheet - production data
Features
•Compatible with the Serial Peripheral Interface
(SPI) bus
•Memory array
– 16 Kb (2 Kbytes) of EEPROM
– Page size: 32 bytes
– Additional Write lockable Page
(Identification page)
•Write
– Byte Write within 5 ms
– Page Write within 5 ms
•Write Protect: quarter, half or whole memory
array
•High-speed clock: 20 MHz
•Single supply voltage:
– 2.5 V to 5.5 V for M95160-W
– 1.8 V to 5.5 V for M95160-R
– 1.7 V to 5.5 V for M95160-DF
•Operating temperature range: from -40°C up to
+85°C
•Enhanced ESD protection
•More than 4 million Write cycles
•More than 200-year data retention
•Packages:
–SO8 (ECOPACK2
®)
– TSSOP8 (ECOPACK2®)
– UFDFPN8 (ECOPACK2®)
–WLCSP (ECOPACK2
®)
– Unsawn wafer (each die is tested)
SO8 (MN)
150 mil width
3',3%1
76623':
PLOZLGWK
6201
PLOZLGWK
TSSOP8 (DW)
169 mil width
WLCSP (CS)
UFDFPN8 (MC)
2 x 3 mm
Unsawn wafer
www.st.com
Contents M95160 M95160-W M95160-R M95160-DF
2/53 DocID022580 Rev 8
Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2 Memory organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Signal description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.1 Serial Data Output (Q) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.2 Serial Data Input (D) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.3 Serial Clock (C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.4 Chip Select (S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.5 Hold (HOLD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.6 Write Protect (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.7 VCC supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.8 VSS ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Connecting to the SPI bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1 SPI modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 Operating features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.1 Supply voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.1.1 Operating supply voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.1.2 Device reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.1.3 Power-up conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.1.4 Power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.2 Active Power and Standby Power modes . . . . . . . . . . . . . . . . . . . . . . . . 14
5.3 Hold condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.4 Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.5 Data protection and protocol control . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6.1 Write Enable (WREN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6.2 Write Disable (WRDI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.3 Read Status Register (RDSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6.3.1 WIP bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
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M95160 M95160-W M95160-R M95160-DF Contents
3
6.3.2 WEL bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6.3.3 BP1, BP0 bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6.3.4 SRWD bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6.4 Write Status Register (WRSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6.5 Read from Memory Array (READ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
6.6 Write to Memory Array (WRITE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
6.7 Read Identification Page (available only in M95160-D devices) . . . . . . . 26
6.8 Write Identification Page (available only in M95160-D devices) . . . . . . . 27
6.9 Read Lock Status (available only in M95160-D devices) . . . . . . . . . . . . . 28
6.10 Lock ID (available only in M95160-D devices) . . . . . . . . . . . . . . . . . . . . . 29
7 Power-up and delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
7.1 Power-up state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
7.2 Initial delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
8 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
9 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
10 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
10.1 SO8N package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
10.2 TSSOP8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
10.3 UFDFN8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
10.4 WLCSP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
11 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
List of tables M95160 M95160-W M95160-R M95160-DF
4/53 DocID022580 Rev 8
List of tables
Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 2. Write-protected block size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 3. Instruction set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 4. Significant bits within the two address bytes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 5. Status Register format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Table 6. Protection modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 7. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 8. Operating conditions (M95160-W, device grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Table 9. Operating conditions (M95160-R, device grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Table 10. Operating conditions (M95160-DF, device grade 6). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Table 11. AC measurement conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Table 12. Cycling performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 13. Memory cell data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 14. Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 15. DC characteristics (M95160-W, device grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Table 16. DC characteristics (M95160-R or M95160-DF, device grade 6). . . . . . . . . . . . . . . . . . . . . 35
Table 17. AC characteristics (M95160-W, device grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 18. AC characteristics (M95160-R or M95160-DF, device grade 6) . . . . . . . . . . . . . . . . . . . . 37
Table 19. AC characteristics (M95160-F, device grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Table 20. AC characteristics (M95160-W, device grade 6)
End of life products: these values apply only to M95160-WMN6TP/S
and M95160-WDW6TP/S devices) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table 21. SO8N – 8-lead plastic small outline, 150 mils body width,
package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Table 22. TSSOP8 – 8-lead thin shrink small outline, 3 x 4.4 mm, 0.5 mm pitch,
package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Table 23. UFDFN8 - 8-lead, 2 × 3 mm, 0.5 mm pitch ultra thin profile fine pitch dual flat
package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 24. WLCSP - 8-bump, 1.350 x 1.365 mm, 0.4 mm pitch wafer level chip scale
package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 25. Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Table 26. Ordering information scheme (unsawn wafer) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Table 27. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
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M95160 M95160-W M95160-R M95160-DF List of figures
5
List of figures
Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 2. 8-pin package connections (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 3. WLCSP connections (top view, marking side, with bumps on the underside) . . . . . . . . . . . 7
Figure 4. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 5. Bus master and memory devices on the SPI bus. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 6. SPI modes supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 7. Hold condition activation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 8. Write Enable (WREN) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 9. Write Disable (WRDI) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 10. Read Status Register (RDSR) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 11. Write Status Register (WRSR) sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 12. Read from Memory Array (READ) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 13. Byte Write (WRITE) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 14. Page Write (WRITE) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 15. Read Identification Page sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 16. Write identification page sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 17. Read Lock Status sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 18. Lock ID sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 19. AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Figure 20. Serial input timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 21. Hold timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 22. Serial output timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 23. SO8N – 8-lead plastic small outline, 150 mils body width, package outline . . . . . . . . . . . . 41
Figure 24. SO8N – 8-lead plastic small outline, 150 mils body width,
package recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 25. TSSOP8 – 8-lead thin shrink small outline, 3 x 4.4 mm, 0.5 mm pitch,
package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 26. UFDFN8 - 8-lead, 2 × 3 mm, 0.5 mm pitch ultra thin profile fine pitch
dual flat package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Figure 27. WLCSP - 8-bump, 1.350 x 1.365 mm, 0.4 mm pitch wafer level chip scale
package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 28. WLCSP - 8-bump, 1.350 x 1.365 mm, 0.4 mm pitch wafer level chip scale
package recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Description M95160 M95160-W M95160-R M95160-DF
6/53 DocID022580 Rev 8
1 Description
The M95160 devices are Electrically Erasable PROgrammable Memories (EEPROMs)
organized as 2048 x 8 bits, accessed through the SPI bus.
The M95160-W can operate with a supply voltage from 2.5 V to 5.5 V, the M95160-R can
operate with a supply voltage from 1.8 V to 5.5 V, and the M95160-DF can operate with a
supply voltage from 1.7 V to 5.5 V, over an ambient temperature range of -40 °C / +85 °C.
The M95160-D offers an additional page, named the Identification Page (32 bytes). The
Identification Page can be used to store sensitive application parameters which can be
(later) permanently locked in Read-only mode.
Figure 1. Logic diagram
The SPI bus signals are C, D and Q, as shown in Figure 1 and Table 1. The device is
selected when Chip Select (S) is driven low. Communications with the device can be
interrupted when the HOLD is driven low.
Table 1. Signal names
Signal name Function Direction
C Serial Clock Input
D Serial Data Input Input
Q Serial Data Output Output
SChip Select Input
W Write Protect Input
HOLD Hold Input
VCC Supply voltage -
VSS Ground -
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3
6##
-XXX
(/,$
633
7
1
#
$
DocID022580 Rev 8 7/53
M95160 M95160-W M95160-R M95160-DF Description
40
Figure 2. 8-pin package connections (top view)
1. See Section 10: Package information for package dimensions, and how to identify pin-1.
Figure 3. WLCSP connections (top view, marking side, with bumps on the underside)
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(/,$1
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-XXX
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ts^^ Y
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Memory organization M95160 M95160-W M95160-R M95160-DF
8/53 DocID022580 Rev 8
2 Memory organization
The memory is organized as shown in the following figure.
Figure 4. Block diagram
069
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6
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SDJH
;GHFRGHU
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4
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DocID022580 Rev 8 9/53
M95160 M95160-W M95160-R M95160-DF Signal description
40
3 Signal description
During all operations, VCC must be held stable and within the specified valid range:
VCC(min) to VCC(max).
All of the input and output signals must be held high or low (according to voltages of VIH,
VOH, VIL or VOL, as specified in Section 9: DC and AC parameters). These signals are
described next.
3.1 Serial Data Output (Q)
This output signal is used to transfer data serially out of the device. Data is shifted out on the
falling edge of Serial Clock (C).
3.2 Serial Data Input (D)
This input signal is used to transfer data serially into the device. It receives instructions,
addresses, and the data to be written. Values are latched on the rising edge of Serial Clock
(C).
3.3 Serial Clock (C)
This input signal provides the timing of the serial interface. Instructions, addresses, or data
present at Serial Data Input (D) are latched on the rising edge of Serial Clock (C). Data on
Serial Data Output (Q) change from the falling edge of Serial Clock (C).
3.4 Chip Select (S)
When this input signal is high, the device is deselected and Serial Data Output (Q) is at high
impedance. The device is in the Standby Power mode, unless an internal Write cycle is in
progress. Driving Chip Select (S) low selects the device, placing it in the Active Power
mode.
After power-up, a falling edge on Chip Select (S) is required prior to the start of any
instruction.
3.5 Hold (HOLD)
The Hold (HOLD) signal is used to pause any serial communications with the device without
deselecting the device.
During the Hold condition, the Serial Data Output (Q) is high impedance, and Serial Data
Input (D) and Serial Clock (C) are Don’t Care.
To start the Hold condition, the device must be selected, with Chip Select (S) driven low.
Signal description M95160 M95160-W M95160-R M95160-DF
10/53 DocID022580 Rev 8
3.6 Write Protect (W)
The main purpose of this input signal is to freeze the size of the area of memory that is
protected against Write instructions (as specified by the values in the BP1 and BP0 bits of
the Status Register).
This pin must be driven either high or low, and must be stable during all Write instructions.
3.7 VCC supply voltage
VCC is the supply voltage.
3.8 VSS ground
VSS is the reference for all signals, including the VCC supply voltage.
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M95160 M95160-W M95160-R M95160-DF Connecting to the SPI bus
40
4 Connecting to the SPI bus
All instructions, addresses and input data bytes are shifted in to the device, most significant
bit first. The Serial Data Input (D) is sampled on the first rising edge of the Serial Clock (C)
after Chip Select (S) goes low.
All output data bytes are shifted out of the device, most significant bit first. The Serial Data
Output (Q) is latched on the first falling edge of the Serial Clock (C) after the instruction
(such as the Read from Memory Array and Read Status Register instructions) have been
clocked into the device.
Figure 5. Bus master and memory devices on the SPI bus
1. The Write Protect (W) and Hold (HOLD) signals should be driven, high or low as appropriate.
Figure 5 shows an example of three memory devices connected to an SPI bus master. Only
one memory device is selected at a time, so only one memory device drives the Serial Data
Output (Q) line at a time. The other memory devices are high impedance.
The pull-up resistor R (represented in Figure 5) ensures that a device is not selected if the
Bus Master leaves the S line in the high impedance state.
In applications where the Bus Master may leave all SPI bus lines in high impedance at the
same time (for example, if the Bus Master is reset during the transmission of an instruction),
the clock line (C) must be connected to an external pull-down resistor so that, if all
inputs/outputs become high impedance, the C line is pulled low (while the S line is pulled
high): this ensures that S and C do not become high at the same time, and so, that the
tSHCH requirement is met. The typical value of R is 100 kΩ.
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4.1 SPI modes
These devices can be driven by a microcontroller with its SPI peripheral running in either of
the following two modes:
•CPOL=0, CPHA=0
•CPOL=1, CPHA=1
For these two modes, input data is latched in on the rising edge of Serial Clock (C), and
output data is available from the falling edge of Serial Clock (C).
The difference between the two modes, as shown in Figure 6, is the clock polarity when the
bus master is in Stand-by mode and not transferring data:
•C remains at 0 for (CPOL=0, CPHA=0)
•C remains at 1 for (CPOL=1, CPHA=1)
Figure 6. SPI modes supported
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M95160 M95160-W M95160-R M95160-DF Operating features
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5 Operating features
5.1 Supply voltage (VCC)
5.1.1 Operating supply voltage (VCC)
Prior to selecting the memory and issuing instructions to it, a valid and stable VCC voltage
within the specified [VCC(min), VCC(max)] range must be applied (see Operating conditions
in Section 9: DC and AC parameters). This voltage must remain stable and valid until the
end of the transmission of the instruction and, for a Write instruction, until the completion of
the internal write cycle (tW). In order to secure a stable DC supply voltage, it is
recommended to decouple the VCC line with a suitable capacitor (usually of the order of
10 nF to 100 nF) close to the VCC/VSS device pins.
5.1.2 Device reset
In order to prevent erroneous instruction decoding and inadvertent Write operations during
power-up, a power-on-reset (POR) circuit is included. At power-up, the device does not
respond to any instruction until VCC reaches the POR threshold voltage. This threshold is
lower than the minimum VCC operating voltage (see Operating conditions in Section 9).
At power-up, when VCC passes over the POR threshold, the device is reset and is in the
following state:
•in Standby Power mode,
•deselected,
•Status Register values:
– The Write Enable Latch (WEL) bit is reset to 0.
– The Write In Progress (WIP) bit is reset to 0.
– The SRWD, BP1 and BP0 bits remain unchanged (non-volatile bits).
It is important to note that the device must not be accessed until VCC reaches a valid and
stable level within the specified [VCC(min), VCC(max)] range, as defined under Operating
conditions in Section 9.
5.1.3 Power-up conditions
When the power supply is turned on, VCC rises continuously from VSS to VCC. During this
time, the Chip Select (S) line is not allowed to float but should follow the VCC voltage. It is
therefore recommended to connect the S line to VCC via a suitable pull-up resistor (see
Figure 5).
In addition, the Chip Select (S) input offers a built-in safety feature, as the S input is edge-
sensitive as well as level-sensitive: after power-up, the device does not become selected
until a falling edge has first been detected on Chip Select (S). This ensures that Chip Select
(S) must have been high, prior to going low to start the first operation.
The VCC voltage has to rise continuously from 0 V up to the minimum VCC operating voltage
defined under Operating conditions in Section 9.
Operating features M95160 M95160-W M95160-R M95160-DF
14/53 DocID022580 Rev 8
5.1.4 Power-down
During power-down (continuous decrease of the VCC supply voltage below the minimum
VCC operating voltage defined under Operating conditions in Section 9), the device must be:
•deselected (Chip Select S should be allowed to follow the voltage applied on VCC),
•in Standby Power mode (there should not be any internal write cycle in progress).
5.2 Active Power and Standby Power modes
When Chip Select (S) is low, the device is selected, and in the Active Power mode. The
device consumes ICC.
When Chip Select (S) is high, the device is deselected. If a Write cycle is not currently in
progress, the device then goes into the Standby Power mode, and the device consumption
drops to ICC1, as specified in DC characteristics (see Section 9).
5.3 Hold condition
The Hold (HOLD) signal is used to pause any serial communications with the device without
resetting the clocking sequence.
To enter the Hold condition, the device must be selected, with Chip Select (S) low.
During the Hold condition, the Serial Data Output (Q) is high impedance, and the Serial Data
Input (D) and the Serial Clock (C) are Don’t Care.
Normally, the device is kept selected for the whole duration of the Hold condition.
Deselecting the device while it is in the Hold condition has the effect of resetting the state of
the device, and this mechanism can be used if required to reset any processes that had
been in progress.(a) (b)
Figure 7. Hold condition activation
a. This resets the internal logic, except the WEL and WIP bits of the Status Register.
b. In the specific case where the device has shifted in a Write command (Inst + Address + data bytes, each data
byte being exactly 8 bits), deselecting the device also triggers the Write cycle of this decoded command.
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M95160 M95160-W M95160-R M95160-DF Operating features
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The Hold condition starts when the Hold (HOLD) signal is driven low when Serial Clock (C)
is already low (as shown in Figure 7).
Figure 7 also shows what happens if the rising and falling edges are not timed to coincide
with Serial Clock (C) being low.
5.4 Status Register
The Status Register contains a number of status and control bits that can be read or set (as
appropriate) by specific instructions. See Section 6.3: Read Status Register (RDSR) for a
detailed description of the Status Register bits.
5.5 Data protection and protocol control
The device features the following data protection mechanisms:
•Before accepting the execution of the Write and Write Status Register instructions, the
device checks whether the number of clock pulses comprised in the instructions is a
multiple of eight.
•All instructions that modify data must be preceded by a Write Enable (WREN)
instruction to set the Write Enable Latch (WEL) bit.
•The Block Protect (BP1, BP0) bits in the Status Register are used to configure part of
the memory as read-only.
•The Write Protect (W) signal is used to protect the Block Protect (BP1, BP0) bits in the
Status Register.
For any instruction to be accepted, and executed, Chip Select (S) must be driven high after
the rising edge of Serial Clock (C) for the last bit of the instruction, and before the next rising
edge of Serial Clock (C).
Two points should be noted in the previous sentence:
•The “last bit of the instruction” can be the eighth bit of the instruction code, or the eighth
bit of a data byte, depending on the instruction (except for Read Status Register
(RDSR) and Read (READ) instructions).
•The “next rising edge of Serial Clock (C)” might (or might not) be the next bus
transaction for some other device on the SPI bus.
Table 2. Write-protected block size
Status Register bits
Protected block Protected array addresses
BP1 BP0
0 0 none none
0 1 Upper quarter 0600h - 07FFh
1 0 Upper half 0400h - 07FFh
1 1 Whole memory 0000h - 07FFh
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6 Instructions
Each command is composed of bytes (MSBit transmitted first), initiated with the instruction
byte, as summarized in Table 3.
If an invalid instruction is sent (one not contained in Table 3), the device automatically enters
a Wait state until deselected.
For read and write commands to memory array and Identification Page the address is
defined by two bytes as explained in Table 4.
Table 3. Instruction set
Instruction Description Instruction
format
WREN Write Enable 0000 0110
WRDI Write Disable 0000 0100
RDSR Read Status Register 0000 0101
WRSR Write Status Register 0000 0001
READ Read from Memory Array 0000 0011
WRITE Write to Memory Array 0000 0010
RDID(1)
1. Instruction available only for the M95160-D device.
Read Identification Page 1000 0011
WRID(1) Write Identification Page 1000 0010
RDLS(1) Reads the Identification Page lock status 1000 0011
LID(1) Locks the Identification page in read-only mode 1000 0010
Table 4. Significant bits within the two address bytes(1)(2)
Instructions
MSB Address byte LSB Address byte
b15 b14 b13 b12 b11 b10 b9 b8 b7 b6 b5 b4 b3 b2 b1 b0
READ or
WRITE xxxxxA10A9A8A7A6A5A4A3A2A1A0
RDID or
WRID(3) 00000000000A4A3A2A1A0
RDLS or
LID(3) 0000010000000000
1. A: Significant address bit.
2. x: bit is Don’t Care.
3. Instruction available only for the M95160-D device.
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6.1 Write Enable (WREN)
The Write Enable Latch (WEL) bit must be set prior to each WRITE and WRSR instruction.
The only way to do this is to send a Write Enable instruction to the device.
As shown in Figure 8, to send this instruction to the device, Chip Select (S) is driven low,
and the bits of the instruction byte are shifted in, on Serial Data Input (D). The device then
enters a wait state. It waits for the device to be deselected, by Chip Select (S) being driven
high.
Figure 8. Write Enable (WREN) sequence
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6.2 Write Disable (WRDI)
One way of resetting the Write Enable Latch (WEL) bit is to send a Write Disable instruction
to the device.
As shown in Figure 9, to send this instruction to the device, Chip Select (S) is driven low,
and the bits of the instruction byte are shifted in, on Serial Data Input (D).
The device then enters a wait state. It waits for a the device to be deselected, by Chip Select
(S) being driven high.
The Write Enable Latch (WEL) bit, in fact, becomes reset by any of the following events:
•Power-up
•WRDI instruction execution
•WRSR instruction completion
•WRITE instruction completion.
Figure 9. Write Disable (WRDI) sequence
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6.3 Read Status Register (RDSR)
The Read Status Register (RDSR) instruction is used to read the Status Register. The
Status Register may be read at any time, even while a Write or Write Status Register cycle is
in progress. When one of these cycles is in progress, it is recommended to check the Write
In Progress (WIP) bit before sending a new instruction to the device. It is also possible to
read the Status Register continuously, as shown in Figure 10.
Figure 10. Read Status Register (RDSR) sequence
The status and control bits of the Status Register are as follows:
6.3.1 WIP bit
The Write In Progress (WIP) bit indicates whether the memory is busy with a Write or Write
Status Register cycle. When set to 1, such a cycle is in progress, when reset to 0, no such
cycle is in progress.
6.3.2 WEL bit
The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch.
When set to 1, the internal Write Enable Latch is set. When set to 0, the internal Write
Enable Latch is reset, and no Write or Write Status Register instruction is accepted.
The WEL bit is returned to its reset state by the following events:
•Power-up
•Write Disable (WRDI) instruction completion
•Write Status Register (WRSR) instruction completion
•Write (WRITE) instruction completion
6.3.3 BP1, BP0 bits
The Block Protect (BP1, BP0) bits are non volatile. They define the size of the area to be
software-protected against Write instructions. These bits are written with the Write Status
Register (WRSR) instruction. When one or both of the Block Protect (BP1, BP0) bits is set
to 1, the relevant memory area (as defined in Table 2) becomes protected against Write
(WRITE) instructions. The Block Protect (BP1, BP0) bits can be written provided that the
Hardware Protected mode has not been set.
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6.3.4 SRWD bit
The Status Register Write Disable (SRWD) bit is operated in conjunction with the Write
Protect (W) signal. The Status Register Write Disable (SRWD) bit and Write Protect (W)
signal enable the device to be put in the Hardware Protected mode (when the Status
Register Write Disable (SRWD) bit is set to 1, and Write Protect (W) is driven low). In this
mode, the non-volatile bits of the Status Register (SRWD, BP1, BP0) become read-only bits
and the Write Status Register (WRSR) instruction is no longer accepted for execution.
Table 5. Status Register format
b7 b0
SRWD 0 0 0 BP1 BP0 WEL WIP
Status Register Write Protect
Block Protect bits
Write Enable Latch bit
Write In Progress bit
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6.4 Write Status Register (WRSR)
The Write Status Register (WRSR) instruction is used to write new values to the Status
Register. Before it can be accepted, a Write Enable (WREN) instruction must have been
previously executed.
The Write Status Register (WRSR) instruction is entered by driving Chip Select (S) low,
followed by the instruction code, the data byte on Serial Data input (D) and Chip Select (S)
driven high. Chip Select (S) must be driven high after the rising edge of Serial Clock (C) that
latches in the eighth bit of the data byte, and before the next rising edge of Serial Clock (C).
Otherwise, the Write Status Register (WRSR) instruction is not executed.
The instruction sequence is shown in Figure 11.
Figure 11. Write Status Register (WRSR) sequence
Driving the Chip Select (S) signal high at a byte boundary of the input data triggers the self-
timed Write cycle that takes tW to complete (as specified in AC tables under Section 9: DC
and AC parameters).
While the Write Status Register cycle is in progress, the Status Register may still be read to
check the value of the Write in progress (WIP) bit: the WIP bit is 1 during the self-timed
Write cycle tW, and 0 when the Write cycle is complete. The WEL bit (Write Enable Latch) is
also reset at the end of the Write cycle tW.
The Write Status Register (WRSR) instruction enables the user to change the values of the
BP1, BP0 and SRWD bits:
•The Block Protect (BP1, BP0) bits define the size of the area that is to be treated as
read-only, as defined in Table 2.
•The SRWD (Status Register Write Disable) bit, in accordance with the signal read on
the Write Protect pin (W), enables the user to set or reset the Write protection mode of
the Status Register itself, as defined in Table 6. When in Write-protected mode, the
Write Status Register (WRSR) instruction is not executed.
The contents of the SRWD and BP1, BP0 bits are updated after the completion of the
WRSR instruction, including the tW Write cycle.
The Write Status Register (WRSR) instruction has no effect on the b6, b5, b4, b1, b0 bits in
the Status Register. Bits b6, b5, b4 are always read as 0.
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The protection features of the device are summarized in Table 6.
When the Status Register Write Disable (SRWD) bit in the Status Register is 0 (its initial
delivery state), it is possible to write to the Status Register (provided that the WEL bit has
previously been set by a WREN instruction), regardless of the logic level applied on the
Write Protect (W) input pin.
When the Status Register Write Disable (SRWD) bit in the Status Register is set to 1, two
cases should be considered, depending on the state of the Write Protect (W) input pin:
•If Write Protect (W) is driven high, it is possible to write to the Status Register (provided
that the WEL bit has previously been set by a WREN instruction).
•If Write Protect (W) is driven low, it is not possible to write to the Status Register even if
the WEL bit has previously been set by a WREN instruction. (Attempts to write to the
Status Register are rejected, and are not accepted for execution). As a consequence,
all the data bytes in the memory area, which are Software-protected (SPM) by the
Block Protect (BP1, BP0) bits in the Status Register, are also hardware-protected
against data modification.
Regardless of the order of the two events, the Hardware-protected mode (HPM) can be
entered by:
•either setting the SRWD bit after driving the Write Protect (W) input pin low,
•or driving the Write Protect (W) input pin low after setting the SRWD bit.
Once the Hardware-protected mode (HPM) has been entered, the only way of exiting it is to
pull high the Write Protect (W) input pin.
If the Write Protect (W) input pin is permanently tied high, the Hardware-protected mode
(HPM) can never be activated, and only the Software-protected mode (SPM), using the
Block Protect (BP1, BP0) bits in the Status Register, can be used.
Table 6. Protection modes
W
signal
SRWD
bit Mode Write protection of the
Status Register
Memory content
Protected area(1)
1. As defined by the values in the Block Protect (BP1, BP0) bits of the Status Register. See Table 2.
Unprotected area(1)
10
Software-
protected
(SPM)
Status Register is writable
(if the WREN instruction
has set the WEL bit).
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and BP0 bits can be
changed.
Write-protected Ready to accept
Write instructions
00
11
01
Hardware-
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Hardware write-
protected.
The values in the BP1
and BP0 bits cannot be
changed.
Write-protected Ready to accept
Write instructions
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6.5 Read from Memory Array (READ)
As shown in Figure 12, to send this instruction to the device, Chip Select (S) is first driven
low. The bits of the instruction byte and address bytes are then shifted in, on Serial Data
Input (D). The address is loaded into an internal address register, and the byte of data at
that address is shifted out, on Serial Data Output (Q).
Figure 12. Read from Memory Array (READ) sequence
1. Depending on the memory size, as shown in Table 4, the most significant address bits are Don’t Care.
If Chip Select (S) continues to be driven low, the internal address register is incremented
automatically, and the byte of data at the new address is shifted out.
When the highest address is reached, the address counter rolls over to zero, allowing the
Read cycle to be continued indefinitely. The whole memory can, therefore, be read with a
single READ instruction.
The Read cycle is terminated by driving Chip Select (S) high. The rising edge of the Chip
Select (S) signal can occur at any time during the cycle.
The instruction is not accepted, and is not executed, if a Write cycle is currently in progress.
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6.6 Write to Memory Array (WRITE)
As shown in Figure 13, to send this instruction to the device, Chip Select (S) is first driven
low. The bits of the instruction byte, address byte, and at least one data byte are then shifted
in, on Serial Data Input (D).
The instruction is terminated by driving Chip Select (S) high at a byte boundary of the input
data. The self-timed Write cycle, triggered by the Chip Select (S) rising edge, continues for a
period tW (as specified in AC characteristics in Section 9: DC and AC parameters), at the
end of which the Write in Progress (WIP) bit is reset to 0.
Figure 13. Byte Write (WRITE) sequence
1. Depending on the memory size, as shown in Table 4, the most significant address bits are Don’t Care.
In the case of Figure 13, Chip Select (S) is driven high after the eighth bit of the data byte
has been latched in, indicating that the instruction is being used to write a single byte.
However, if Chip Select (S) continues to be driven low, as shown in Figure 14, the next byte
of input data is shifted in, so that more than a single byte, starting from the given address
towards the end of the same page, can be written in a single internal Write cycle.
Each time a new data byte is shifted in, the least significant bits of the internal address
counter are incremented. If more bytes are sent than will fit up to the end of the page, a
condition known as “roll-over” occurs. In case of roll-over, the bytes exceeding the page size
are overwritten from location 0 of the same page.
The instruction is not accepted, and is not executed, under the following conditions:
•if the Write Enable Latch (WEL) bit has not been set to 1 (by executing a Write Enable
instruction just before),
•if a Write cycle is already in progress,
•if the device has not been deselected, by driving high Chip Select (S), at a byte
boundary (after the eighth bit, b0, of the last data byte that has been latched in),
•if the addressed page is in the region protected by the Block Protect (BP1 and BP0)
bits.
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Note: The self-timed write cycle tW is internally executed as a sequence of two consecutive
events: [Erase addressed byte(s)], followed by [Program addressed byte(s)]. An erased bit
is read as “0” and a programmed bit is read as “1”.
Figure 14. Page Write (WRITE) sequence
1. Depending on the memory size, as shown in Table 4, the most significant address bits are Don’t Care.
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6.7 Read Identification Page (available only in M95160-D
devices)
The Read Identification Page (RDID) instruction is used to read the Identification Page
(additional page of 32 bytes which can be written and later permanently locked in Read-only
mode).
The Chip Select (S) signal is first driven low, the bits of the instruction byte and address
bytes are then shifted in (MSB first) on Serial Data input (D). Address bit A10 must be 0,
other upper address bits are Don't Care (it might be easier to define these bits as 0, as
shown in Table 4). The data byte pointed to by the lower address bits [A4:A0] is shifted out
(MSB first) on Serial Data output (Q).
The first byte addressed can be any byte within the identification page.
If Chip Select (S) continues to be driven low, the internal address register is automatically
incremented and the byte of data at the new address is shifted out.
Note that there is no roll over feature in the Identification Page. The address of bytes to read
must not exceed the page boundary.
The read cycle is terminated by driving Chip Select (S) high. The rising edge of the Chip
Select (S) signal can occur at any time when the data bits are shifted out.
The instruction is not accepted, and is not executed, if a Write cycle is currently in progress.
Figure 15. Read Identification Page sequence
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6.8 Write Identification Page (available only in M95160-D
devices)
The Write Identification Page (WRID) instruction is used to write the Identification Page
(additional page of 32 bytes which can also be permanently locked in Read-only mode).
The Chip Select signal (S) is first driven low, and then the bits of the instruction byte,
address bytes, and at least one data byte are shifted in (MSB first) on Serial Data input (D).
Address bit A10 must be 0, other upper address bits are Don't Care (it might be easier to
define these bits as 0, as shown in Table 4). The lower address bits [A4:A0] define the byte
address inside the identification page.
The self-timed Write cycle starts from the rising edge of Chip Select (S), and continues for a
period tW (as specified in Section 9: DC and AC parameters).
Figure 16. Write identification page sequence
The instruction is discarded, and is not executed, under the following conditions:
•If the Write Enable Latch (WEL) bit has not been set to 1 (by executing a Write Enable
instruction just before).
•If a Write cycle is already in progress.
•If the device has not been deselected, by driving high Chip Select (S), at exactly a byte
boundary (after the eighth bit, b0, of the last data byte that has been latched in).
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6.9 Read Lock Status (available only in M95160-D devices)
The Read Lock Status (RDLS) instruction is used to read the lock status.
To send this instruction to the device, Chip Select (S) first has to be driven low. The bits of
the instruction byte and address bytes are then shifted in (MSB first) on Serial Data input
(D). Address bit A10 must be 1; all other address bits are Don't Care (it might be easier to
define these bits as 0, as shown in Table 4). The Lock bit is the LSB (Least Significant Bit) of
the byte read on Serial Data output (Q). It is at ‘1’ when the lock is active and at ‘0’ when the
lock is not active. If Chip Select (S) continues to be driven low, the same data byte is shifted
out.
The read cycle is terminated by driving Chip Select (S) high. The instruction sequence is
shown in Figure 17.
The Read Lock Status instruction is not accepted and not executed if a Write cycle is
currently in progress.
Figure 17. Read Lock Status sequence
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6.10 Lock ID (available only in M95160-D devices)
The Lock Identification Page (LID) command is used to permanently lock the Identification
Page in Read-only mode.
The LID instruction is issued by driving Chip Select (S) low, sending (MSB first) the
instruction code, the address and a data byte on Serial Data input (D), and driving Chip
Select (S) high. In the address sent, A10 must be equal to 1. All other address bits are Don't
Care (it might be easier to define these bits as 0, as shown in Table 4). The data byte sent
must be equal to the binary value xxxx xx1x, where x = Don't Care. The LID instruction is
terminated by driving Chip Select (S) high at a data byte boundary, otherwise, the instruction
is not executed.
Driving Chip Select (S) high at a byte boundary of the input data triggers the self-timed Write
cycle which duration is tW (specified in Section 9: DC and AC parameters). The instruction
sequence is shown in Figure 18.
The instruction is discarded, and is not executed, under the following conditions:
•If the Write Enable Latch (WEL) bit has not been set to 1 (by executing a Write Enable
instruction just before).
•If a Write cycle is already in progress.
•If the device has not been deselected, by driving high Chip Select (S), at exactly a byte
boundary (after the eighth bit, b0, of the last data byte that has been latched in).
Figure 18. Lock ID sequence
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Power-up and delivery state M95160 M95160-W M95160-R M95160-DF
30/53 DocID022580 Rev 8
7 Power-up and delivery state
7.1 Power-up state
After power-up, the device is in the following state:
•Standby power mode,
•deselected (after power-up, a falling edge is required on Chip Select (S) before any
instructions can be started),
•not in the Hold condition,
•the Write Enable Latch (WEL) is reset to 0,
•Write In Progress (WIP) is reset to 0.
The SRWD, BP1 and BP0 bits of the Status Register are unchanged from the previous
power-down (they are non-volatile bits).
7.2 Initial delivery state
The device is delivered with:
•the memory array set to all 1s (each byte = FFh)
•Status register: bit SRWD =0, BP1 =0 and BP0 =0
•Identification page: byte values are Don’t Care.
DocID022580 Rev 8 31/53
M95160 M95160-W M95160-R M95160-DF Maximum ratings
40
8 Maximum ratings
Stressing the device outside the ratings listed in Table 7 may cause permanent damage to
the device. These are stress ratings only, and operation of the device at these, or any other
conditions outside those indicated in the operating sections of this specification, is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Table 7. Absolute maximum ratings
Symbol Parameter Min. Max. Unit
Ambient operating temperature –40 130 °C
TSTG Storage temperature –65 150 °C
TLEAD Lead temperature during soldering See note (1)
1. Compliant with JEDEC standard J-STD-020D (for small-body, Sn-Pb or Pb free assembly), the ST
ECOPACK® 7191395 specification, and the European directive on Restrictions on Hazardous Substances
(RoHS directive 2011/65/EU of July 2011).
°C
VOOutput voltage –0.50 VCC+0.6 V
VIInput voltage –0.50 6.5 V
VCC Supply voltage –0.50 6.5 V
IOL DC output current (Q = 0) - 5 mA
IOH DC output current (Q = 1) - 5 mA
VESD Electrostatic discharge voltage (human body model)(2)
2. Positive and negative pulses applied on different combinations of pin connections, according to AEC-
Q100-002 (compliant with ANSI/ESDA/JEDEC JS-001-2012, C1=100 pF, R1=1500 Ω, R2=500 Ω).
-4000V
DC and AC parameters M95160 M95160-W M95160-R M95160-DF
32/53 DocID022580 Rev 8
9 DC and AC parameters
This section summarizes the operating conditions and the DC/AC characteristics of the
device.
Figure 19. AC measurement I/O waveform
Table 8. Operating conditions (M95160-W, device grade 6)
Symbol Parameter Min. Max. Unit
VCC Supply voltage 2.5 5.5 V
TAAmbient operating temperature –40 85 °C
Table 9. Operating conditions (M95160-R, device grade 6)
Symbol Parameter Min. Max. Unit
VCC Supply voltage 1.8 5.5 V
TAAmbient operating temperature –40 85 °C
Table 10. Operating conditions (M95160-DF, device grade 6)
Symbol Parameter Min. Max. Unit
VCC Supply voltage 1.7 5.5 V
TAAmbient operating temperature –40 85 °C
Table 11. AC measurement conditions
Symbol Parameter Min. Max. Unit
CLLoad capacitance 30 pF
- Input rise and fall times - 50 ns
- Input pulse voltages 0.2 VCC to 0.8 VCC V
- Input and output timing reference voltages 0.3 VCC to 0.7 VCC V
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DocID022580 Rev 8 33/53
M95160 M95160-W M95160-R M95160-DF DC and AC parameters
40
Table 12. Cycling performance
Symbol Parameter(1)
1. Cycling performance for products identified by process letter K (previous products were specified with 1
million cycles at 25 °C)
Test conditions Min. Max. Unit
Ncycle Write cycle endurance
TA ≤ 25 °C,
VCC(min) < VCC < VCC(max) - 4,000,000
Write cycle
TA = 85 °C,
VCC(min) < VCC < VCC(max) - 1,200,000
Table 13. Memory cell data retention
Parameter Test conditions Min. Unit
Data retention(1)(2)
1. The data retention behavior is checked in production, while the 200-year limit is defined from
characterization and qualification results.
2. For products identified by process letter K (previous products were specified with a data retention of 40
years at 55°C).
TA = 55 °C 200 Year
Table 14. Capacitance
Symbol Parameter Test conditions(1)
1. Sampled only, not 100% tested, at TA = 25 °C and a frequency of 5 MHz.
Min. Max. Unit
COUT Output capacitance (Q) VOUT = 0 V - 8 pF
CIN
Input capacitance (D) VIN = 0 V - 8 pF
Input capacitance (other pins) VIN = 0 V - 6 pF
DC and AC parameters M95160 M95160-W M95160-R M95160-DF
34/53 DocID022580 Rev 8
Table 15. DC characteristics (M95160-W, device grade 6)
Symbol Parameter Test conditions in addition to those
defined in Table 8 and Table 11 Min. Max. Unit
ILI
Input leakage
current VIN = VSS or VCC -± 2µA
ILO
Output leakage
current S = VCC, VOUT = VSS or VCC -± 2µA
ICC
Supply current
(Read)
VCC = 2.5 V, fC = 5 MHz,
C = 0.1 VCC/0.9 VCC, Q = open -2
mA
VCC = 2.5 V, fC = 10 MHz,
C = 0.1 VCC/0.9 VCC, Q = open -2
(1)
1. 5 mA for the devices identified with process letter G or S.
VCC = 5.5 V, fC = 20 MHz,
C = 0.1 VCC/0.9 VCC, Q = open -5
(2)
2. Only for the devices identified by process letter K.
ICC0(3)
3. Characterized only, not tested in production.
Supply current
(Write) During tW, S = VCC, 2.5 V < VCC < 5.5 V - 5 mA
ICC1
Supply current
(Standby)
S = VCC, VCC = 5.5 V,
VIN = VSS or VCC,-3
µA
S = VCC, VCC = 2.5 V,
VIN = VSS or VCC,-2
VIL Input low voltage - –0.45 0.3 VCC V
VIH Input high voltage - 0.7 VCC VCC+1 V
VOL Output low voltage IOL = 1.5 mA, VCC = 2.5 V - 0.4 V
VOH Output high voltage VCC = 2.5 V and IOH = 0.4 mA or
VCC = 5.5 V and IOH = 2 mA 0.8 VCC -V
VRES(3) Internal reset
threshold voltage -1.0
(4)
4. 0.5 V with the device identified by process letter K.
1.65(5)
5. 1.5 V with the device identified by process letter K.
V
DocID022580 Rev 8 35/53
M95160 M95160-W M95160-R M95160-DF DC and AC parameters
40
Table 16. DC characteristics (M95160-R or M95160-DF, device grade 6)
Symbol Parameter
Test conditions in addition
to those defined
in Table 9 or Table 10 and Table 11(1)
Min. Max. Unit
ILI Input leakage current VIN = VSS or VCC -± 2µA
ILO Output leakage current S = VCC, voltage applied on Q = VSS or VCC -± 2µA
ICC Supply current (Read) VCC = 1.8 V or 1.7 V, fC = 5 MHz,
C = 0.1 VCC/0.9 VCC, Q = open -2
(2) mA
ICC0(3) Supply current (Write) VCC = 1.8 V or 1.7 V, during tW, S = VCC -5mA
ICC1 Supply current (Standby) VCC = 1.8 V or 1.7 V, S = VCC, VIN = VSS or
VCC
-1µA
VIL Input low voltage VCC < 2.5 V –0.45 0.25 VCC V
VIH Input high voltage VCC < 2.5 V 0.75 VCC VCC+1 V
VOL Output low voltage IOL = 0.15 mA, VCC = 1.8 V or 1.7 V - 0.3 V
VOH Output high voltage IOH = –0.1 mA, VCC = 1.8 V or 1.7 V 0.8 VCC -V
VRES(3) Internal reset threshold
voltage -1.0
(4) 1.65(5) V
1. If the application uses the M95160-R or M95160-DF devices with 2.5 V ≤ VCC ≤ 5.5 V and -40 °C ≤ TA ≤ +85 °C, please refer to
Table 15: DC characteristics (M95160-W, device grade 6), rather than to the above table.
2. 2 mA at 3.5 MHz for the devices identified with process letters G or S.
3. Characterized only, not tested in production.
4. 0.5 V with the device identified by process letter K.
5. 1.5 V with the device identified by process letter K.
DC and AC parameters M95160 M95160-W M95160-R M95160-DF
36/53 DocID022580 Rev 8
Table 17. AC characteristics (M95160-W, device grade 6)
Test conditions specified in Table 8 and Table 11
Symbol Alt. Parameter VCC = 2.5 to 5.5 V
(1)
VCC = 4.5 to 5.5 V Unit
Min. Max. Min. Max.
fCfSCK Clock frequency DC 10 DC 20 MHz
tSLCH tCSS1 S active setup time 30 - 15 - ns
tSHCH tCSS2 S not active setup time 30 - 15 - ns
tSHSL tCS S deselect time 40 - 20 - ns
tCHSH tCSH S active hold time 30 - 15 - ns
tCHSL -S not active hold time 30 - 15 - ns
tCH(2) tCLH Clock high time 40 - 20 - ns
tCL(2) tCLL Clock low time 40 - 20 - ns
tCLCH(3) tRC Clock rise time - 2 - 2 µs
tCHCL(3) tFC Clock fall time - 2 - 2 µs
tDVCH tDSU Data in setup time 10 - 5 - ns
tCHDX tDH Data in hold time 10 - 10 - ns
tHHCH - Clock low hold time after HOLD not active 30 - 15 - ns
tHLCH - Clock low hold time after HOLD active 30 - 15 - ns
tCLHL - Clock low set-up time before HOLD active 0 - 0 - ns
tCLHH - Clock low set-up time before HOLD not active 0 - 0 - ns
tSHQZ(3) tDIS Output disable time - 40 - 20 ns
tCLQV(4) tVClock low to output valid - 40 - 20 ns
tCLQX tHO Output hold time 0 - 0 - ns
tQLQH(3) tRO Output rise time - 40 - 20 ns
tQHQL(3) tFO Output fall time - 40 - 20 ns
tHHQV tLZ HOLD high to output valid - 40 - 20 ns
tHLQZ(3) tHZ HOLD low to output high-Z - 40 - 20 ns
tWtWC Write time - 5 - 5 ms
1. Only for devices identified by process letter K.
2. tCH + tCL must never be lower than the shortest possible clock period, 1/fC(max).
3. Characterized only, not tested in production.
4. tCLQV must be compatible with tCL (clock low time): if the SPI bus master offers a Read setup time tSU = 0 ns, tCL can be
equal to (or greater than) tCLQV; in all other cases, tCL must be equal to (or greater than) tCLQV+tSU.
DocID022580 Rev 8 37/53
M95160 M95160-W M95160-R M95160-DF DC and AC parameters
40
Table 18. AC characteristics (M95160-R or M95160-DF, device grade 6)
Test conditions specified in Table 9 or Table 10 and Table 11(1)
Symbol Alt. Parameter Min. Max. Unit
fCfSCK Clock frequency D.C. 5 MHz
tSLCH tCSS1 S active setup time 60 - ns
tSHCH tCSS2 S not active setup time 60 - ns
tSHSL tCS S deselect time 90 - ns
tCHSH tCSH S active hold time 60 - ns
tCHSL -S not active hold time 60 - ns
tCH(2) tCLH Clock high time 80 - ns
tCL(2) tCLL Clock low time 80 - ns
tCLCH(3) tRC Clock rise time - 2 µs
tCHCL(3) tFC Clock fall time - 2 µs
tDVCH tDSU Data in setup time 20 - ns
tCHDX tDH Data in hold time 20 - ns
tHHCH - Clock low hold time after HOLD not active 60 - ns
tHLCH - Clock low hold time after HOLD active 60 - ns
tCLHL - Clock low set-up time before HOLD active 0 - ns
tCLHH - Clock low set-up time before HOLD not active 0 - ns
tSHQZ(3) tDIS Output disable time - 80 ns
tCLQV tVClock low to output valid - 80 ns
tCLQX tHO Output hold time 0 - ns
tQLQH(3) tRO Output rise time - 80 ns
tQHQL(3) tFO Output fall time - 80 ns
tHHQV tLZ HOLD high to output valid - 80 ns
tHLQZ(3) tHZ HOLD low to output high-Z - 80 ns
tWtWC Write time - 5 ms
1. If the application uses the M95160-R or M95160-DF devices at 2.5 V ≤ VCC ≤ 5.5 V and -40 °C ≤ TA ≤ +85 °C,
please refer to Table 17: AC characteristics (M95160-W, device grade 6), rather than to the above table.
2. tCH + tCL must never be lower than the shortest possible clock period, 1/fC(max).
3. Characterized only, not tested in production.
DC and AC parameters M95160 M95160-W M95160-R M95160-DF
38/53 DocID022580 Rev 8
Table 19. AC characteristics (M95160-F(1), device grade 6)
1. Not recommended for new designs, please refer to Table 18: AC characteristics (M95160-R or M95160-
DF, device grade 6).
Test conditions specified in Table 10 and Table 11
Symbol Alt. Parameter Min. Max. Unit
fCfSCK Clock frequency D.C. 3.5 MHz
tSLCH tCSS1 S active setup time 85 - ns
tSHCH tCSS2 S not active setup time 85 - ns
tSHSL tCS S deselect time 120 - ns
tCHSH tCSH S active hold time 85 - ns
tCHSL -S not active hold time 85 - ns
tCH(2)
2. tCH + tCL must never be lower than the shortest possible clock period, 1/fC(max).
tCLH Clock high time 110 - ns
tCL(2) tCLL Clock low time 110 - ns
tCLCH(3)
3. Characterized only, not tested in production.
tRC Clock rise time - 2 µs
tCHCL(3) tFC Clock fall time - 2 µs
tDVCH tDSU Data in setup time 30 - ns
tCHDX tDH Data in hold time 30 - ns
tHHCH - Clock low hold time after HOLD not active 85 - ns
tHLCH - Clock low hold time after HOLD active 85 - ns
tCLHL - Clock low set-up time before HOLD active 0 - 0
tCLHH - Clock low set-up time before HOLD not active 0 - 0
tSHQZ(3) tDIS Output disable time - 120 ns
tCLQV tVClock low to output valid - 120 ns
tCLQX tHO Output hold time 0 - ns
tQLQH(3) tRO Output rise time - 100 ns
tQHQL(3) tFO Output fall time - 100 ns
tHHQV tLZ HOLD high to output valid - 110 ns
tHLQZ(3) tHZ HOLD low to output high-Z - 110 ns
tWtWC Write time - 5 ms
DocID022580 Rev 8 39/53
M95160 M95160-W M95160-R M95160-DF DC and AC parameters
40
The values in the following table must not be considered for any new design.
Table 20. AC characteristics (M95160-W, device grade 6)
End of life products: these values apply only to M95160-WMN6TP/S
and M95160-WDW6TP/S devices)
Test conditions specified in Table 8 and Table 11
Symbol Alt. Parameter Min. Max. Unit
fCfSCK Clock frequency D.C. 5 MHz
tSLCH tCSS1 S active setup time 90 - ns
tSHCH tCSS2 S not active setup time 90 - ns
tSHSL tCS S deselect time 100 - ns
tCHSH tCSH S active hold time 90 - ns
tCHSL -S not active hold time 90 - ns
tCH(1)
1. tCH + tCL must never be lower than the shortest possible clock period, 1/fC(max).
tCLH Clock high time 90 - ns
tCL(1) tCLL Clock low time 90 - ns
tCLCH(2)
2. Characterized only, not tested in production.
tRC Clock rise time - 1 µs
tCHCL(2) tFC Clock fall time - 1 µs
tDVCH tDSU Data in setup time 20 - ns
tCHDX tDH Data in hold time 30 - ns
tHHCH - Clock low hold time after HOLD not active 70 - ns
tHLCH - Clock low hold time after HOLD active 40 - ns
tCLHL - Clock low set-up time before HOLD active 0 - ns
tCLHH -Clock low set-up time before HOLD not
active 0-ns
tSHQZ(2) tDIS Output disable time - 100 ns
tCLQV tVClock low to output valid - 60 ns
tCLQX tHO Output hold time 0 - ns
tQLQH(2) tRO Output rise time - 50 ns
tQHQL(2) tFO Output fall time - 50 ns
tHHQV tLZ HOLD high to output valid - 50 ns
tHLQZ(2) tHZ HOLD low to output high-Z - 100 ns
tWtWC Write time - 5 ms
DC and AC parameters M95160 M95160-W M95160-R M95160-DF
40/53 DocID022580 Rev 8
Figure 20. Serial input timing
Figure 21. Hold timing
Figure 22. Serial output timing
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DocID022580 Rev 8 41/53
M95160 M95160-W M95160-R M95160-DF Package information
52
10 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10.1 SO8N package information
Figure 23. SO8N – 8-lead plastic small outline, 150 mils body width, package outline
1. Drawing is not to scale.
Table 21. SO8N – 8-lead plastic small outline, 150 mils body width,
package mechanical data
Symbol
millimeters inches(1)
Min. Typ. Max. Min. Typ. Max.
A - - 1.750 - - 0.0689
A1 0.100 - 0.250 0.0039 - 0.0098
A2 1.250 - - 0.0492 - -
b 0.280 - 0.480 0.0110 - 0.0189
c 0.170 - 0.230 0.0067 - 0.0091
D 4.800 4.900 5.000 0.1890 0.1929 0.1969
E 5.800 6.000 6.200 0.2283 0.2362 0.2441
E1 3.800 3.900 4.000 0.1496 0.1535 0.1575
e - 1.270 - - 0.0500 -
h 0.250 - 0.500 0.0098 - 0.0197
k 0° - 8° 0° - 8°
L 0.400 - 1.270 0.0157 - 0.0500
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42/53 DocID022580 Rev 8
Figure 24. SO8N – 8-lead plastic small outline, 150 mils body width,
package recommended footprint
1. Dimensions are expressed in millimeters.
L1 - 1.040 - - 0.0409 -
ccc - - 0.100 - - 0.0039
1. Values in inches are converted from mm and rounded to four decimal digits.
Table 21. SO8N – 8-lead plastic small outline, 150 mils body width,
package mechanical data (continued)
Symbol
millimeters inches(1)
Min. Typ. Max. Min. Typ. Max.
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DocID022580 Rev 8 43/53
M95160 M95160-W M95160-R M95160-DF Package information
52
10.2 TSSOP8 package information
Figure 25.TSSOP8 – 8-lead thin shrink small outline, 3 x 4.4 mm, 0.5 mm pitch,
package outline
1. Drawing is not to scale.
Table 22. TSSOP8 – 8-lead thin shrink small outline, 3 x 4.4 mm, 0.5 mm pitch,
package mechanical data
Symbol
millimeters inches(1)
1. Values in inches are converted from mm and rounded to four decimal digits.
Min. Typ. Max. Min. Typ. Max.
A - - 1.200 - - 0.0472
A1 0.050 - 0.150 0.0020 - 0.0059
A2 0.800 1.000 1.050 0.0315 0.0394 0.0413
b 0.190 - 0.300 0.0075 - 0.0118
c 0.090 - 0.200 0.0035 - 0.0079
CP - - 0.100 - - 0.0039
D 2.900 3.000 3.100 0.1142 0.1181 0.1220
e - 0.650 - - 0.0256 -
E 6.200 6.400 6.600 0.2441 0.2520 0.2598
E1 4.300 4.400 4.500 0.1693 0.1732 0.1772
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
α0° - 8° 0° - 8°
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44/53 DocID022580 Rev 8
10.3 UFDFN8 package information
Figure 26. UFDFN8 - 8-lead, 2 × 3 mm, 0.5 mm pitch ultra thin profile fine pitch
dual flat package outline
1. Max. package warpage is 0.05 mm.
2. Exposed copper is not systematic and can appear partially or totally according to the cross section.
3. Drawing is not to scale.
4. The central pad (the area E2 by D2 in the above illustration) must be either connected to VSS or left floating
(not connected) in the end application.
Table 23. UFDFN8 - 8-lead, 2 × 3 mm, 0.5 mm pitch ultra thin profile fine pitch dual flat
package mechanical data
Symbol
millimeters inches(1)
Min Typ Max Min Typ Max
A 0.450 0.550 0.600 0.0177 0.0217 0.0236
A1 0.000 0.020 0.050 0.0000 0.0008 0.0020
b(2) 0.200 0.250 0.300 0.0079 0.0098 0.0118
D 1.900 2.000 2.100 0.0748 0.0787 0.0827
D2 1.200 - 1.600 0.0472 - 0.0630
E 2.900 3.000 3.100 0.1142 0.1181 0.1220
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M95160 M95160-W M95160-R M95160-DF Package information
52
E2 1.200 - 1.600 0.0472 - 0.0630
e - 0.500 - 0.0197
K 0.300 - - 0.0118 - -
L 0.300 - 0.500 0.0118 - 0.0197
L1 - - 0.150 - - 0.0059
L3 0.300 - - 0.0118 - -
aaa - - 0.150 - - 0.0059
bbb - - 0.100 - - 0.0039
ccc - - 0.100 - - 0.0039
ddd - - 0.050 - - 0.0020
eee(3) - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.
2. Dimension b applies to plated terminal and is measured between 0.15 and 0.30 mm from the terminal tip.
3. Applied for exposed die paddle and terminals. Exclude embedding part of exposed die paddle from
measuring.
Table 23. UFDFN8 - 8-lead, 2 × 3 mm, 0.5 mm pitch ultra thin profile fine pitch dual flat
package mechanical data (continued)
Symbol
millimeters inches(1)
Min Typ Max Min Typ Max
Package information M95160 M95160-W M95160-R M95160-DF
46/53 DocID022580 Rev 8
10.4 WLCSP package information
Figure 27. WLCSP - 8-bump, 1.350 x 1.365 mm, 0.4 mm pitch wafer level chip scale
package outline
1. Drawing is not to scale.
Table 24. WLCSP - 8-bump, 1.350 x 1.365 mm, 0.4 mm pitch wafer level chip scale
package mechanical data
Symbol
millimeters inches(1)
Min Typ Max Min Typ Max
A 0.490 0.545 0.600 0.0193 0.0215 0.0236
A1 - 0.190 - - 0.0075 -
A2 - 0.355 - - 0.0140 -
b(2) - 0.270 - - 0.0106 -
D - 1.350 1.475 - 0.0531 0.0581
E - 1.365 1.490 - 0.0537 0.0587
e - 0.400 - - 0.0157 -
e1 - 0.800 - - 0.0315 -
F - 0.282 - - 0.0111 -
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DocID022580 Rev 8 47/53
M95160 M95160-W M95160-R M95160-DF Package information
52
Figure 28. WLCSP - 8-bump, 1.350 x 1.365 mm, 0.4 mm pitch wafer level chip scale
package recommended footprint
1. Dimensions are expressed in millimeters.
G - 0.275 - - 0.0108 -
aaa - - 0.110 - - 0.0043
bbb - - 0.110 - - 0.0043
ccc - - 0.110 - - 0.0043
ddd - - 0.060 - - 0.0024
eee - - 0.060 - - 0.0024
1. Values in inches are converted from mm and rounded to 4 decimal digits.
2. Dimension is measured at the maximum bump diameter parallel to primary datum Z.
Table 24. WLCSP - 8-bump, 1.350 x 1.365 mm, 0.4 mm pitch wafer level chip scale
package mechanical data (continued)
&B)3B9
H
H
H
H
[E
Part numbering M95160 M95160-W M95160-R M95160-DF
48/53 DocID022580 Rev 8
11 Part numbering
Table 25. Ordering information scheme
Example: M95160-D W MN 6 T P /S
Device type
M95 = SPI serial access EEPROM
Device function
160 = 16 Kbit (2048 x 8)
160-D = 16 Kbit (2048 x 8) plus Identification page
Operating voltage
W = VCC = 2.5 to 5.5 V
R = VCC = 1.8 to 5.5 V
F = VCC = 1.7 to 5.5 V
Package(1)
1. All packages are ECOPACK2® (RoHS-compliant and free of brominated, chlorinated and antimony-oxide
flame retardants).
MN = SO8 (150 mil width)
DW = TSSOP8 (169 mil width)
MC = UFDFPN8 (MLP8)
CS = WLCSP
Device grade
6 = Industrial temperature range, –40 to 85 °C
Device tested with standard test flow
Option
T = Tape and reel packing
blank = tube packing
Plating technology
G or P = RoHS compliant and halogen-free
(ECOPACK2®)
Process(2)
2. The process letters apply to WLCSP devices only. The process letters appear on the device package
(marking) and on the shipment box. Please contact your nearest ST Sales Office for further information.
/G or /S = Manufacturing technology code
DocID022580 Rev 8 49/53
M95160 M95160-W M95160-R M95160-DF Part numbering
52
Table 26. Ordering information scheme (unsawn wafer)(1)
1. For all information concerning the M95160 delivered in unsawn wafer, please contact your nearest ST
Sales Office.
Example: M95160-D - F K W 20 I /85
Device type
M95 = SPI serial access EEPROM
Device function
160-D = 16 Kbit (2048 x 8 bit) plus identification page
Operating voltage
F = VCC = 1.7 V to 5.5 V
Process
K = F8H
Delivery form
W = Unsawn wafer
Wafer thickness
20 = Non-backlapped wafer
Wafer testing
I = Inkless test
Device grade
85 = 0°C to 85°C
Part numbering M95160 M95160-W M95160-R M95160-DF
50/53 DocID022580 Rev 8
Note: Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are
not yet qualified and therefore not yet ready to be used in production and any consequences
deriving from such usage will not be at ST charge. In no event, ST will be liable for any
customer usage of these engineering samples in production. ST Quality has to be contacted
prior to any decision to use these Engineering samples to run qualification activity.
DocID022580 Rev 8 51/53
M95160 M95160-W M95160-R M95160-DF Revision history
52
12 Revision history
Table 27. Document revision history
Date Revision Changes
22-Mar-2012 1 Initial release.
17-Dec-2012 2
Updated:
– All information about package UFDFPN8
– Introduction of Package information
–Section 7.2: Initial delivery state
08-Jan-2013 3 Updated plating technology
16-Sep-2013 4
Replaced “M95160-F” by “M95160-DF” part number.
Updated:
– Package figure on cover page
–Features: High-speed clock frequency, write cycles and data retention
–Section 10: Package information
–Figure 4: Block diagram
–Section 6: Instructions: updated introduction and added Sections 6.7 to
6.10
–Section 7.2: Initial delivery state
– footnote 1 in Table 7: Absolute maximum ratings
–Table 15: DC characteristics (M95160-W, device grade 6), Table 16:
DC characteristics (M95160-R or M95160-DF, device grade 6),
Table 17: AC characteristics (M95160-W, device grade 6) and Table 18:
AC characteristics (M95160-R or M95160-DF, device grade 6).
–Table 25: Ordering information scheme
Added Table 12: Cycling performance and Table 13: Memory cell data
retention.
11-Mar-2014 5 Added in cover page “Write lockable Page (Identification page)"
21-May-2014 6
Updated Figure 3: WLCSP connections (top view, marking side, with
bumps on the underside).
Deleted Caution in Figure 3: WLCSP connections (top view, marking side,
with bumps on the underside).
Updated Footnote 2. in Figure 25: UFDFPN8 (MLP8) – 8-lead ultra thin
fine pitch dual flat no lead, package outline.
Updated Table 23: UFDFPN8 (MLP8) – 8-lead ultra thin fine pitch dual flat
package no lead 2 x 3 mm, data. and Table 24: M95160-RCS6TP/S
WLCSP package mechanical data.
Updated Figure 26: M95160-RCS6TP/S WLCSP package outline.
Revision history M95160 M95160-W M95160-R M95160-DF
52/53 DocID022580 Rev 8
06-Oct-2014 7
Updated package information in Features.
Updated footnotes:
–2 in Table 7: Absolute maximum ratings;
–1 in Table 15: DC characteristics (M95160-W, device grade 6);
–1 in Table 25: Ordering information scheme.
Updated Table 25: Ordering information scheme.
05-Oct-2015 8
Added Unsawn wafer option and updated package information in
Features.
Updated Figure 4: Block diagram and Section 5.1.3: Power-up conditions.
Updated Section 10: Package information and its subsections.
Added Table 26: Ordering information scheme (unsawn wafer) in
Section 11.
Table 27. Document revision history (continued)
Date Revision Changes
DocID022580 Rev 8 53/53
M95160 M95160-W M95160-R M95160-DF
53
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