HSMS-282x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. Typical applications of these Schottky diodes are mixing, detecting, switching, sam pling, clamping, and wave shaping. The HSMS282x series of diodes is the best all-around choice for most applica tions, featuring low series resistance, low forward voltage at all current levels and good RF characteristics. * Low Turn-On Voltage (As Low as 0.34 V at 1 mA) Note that Avago's manufacturing techniques assure that dice found in pairs and quads are taken from adjacent sites on the wafer, assuring the highest degree of match. Package Lead Code Identification, SOT-23/SOT-143 (Top View) SINGLE 3 SERIES 3 1 1 #0 2 UNCONNECTED PAIR 3 4 1 #5 2 2 #2 RING QUAD 3 4 1 #7 2 #3 2 #8 2 Package Lead Code Identification, SOT-323 (Top View) * Single, Dual and Quad Versions * Unique Configurations in Surface Mount SOT-363 Package - increase flexibility - save board space - reduce cost * HSMS-282K Grounded Center Leads Provide up to 10 dB Higher Isolation * Better Thermal Conductivity for Higher Power Dissipation BRIDGE QUAD 3 4 1 * Six-sigma Quality Level * Matched Diodes for Consistent Performance COMMON ANODE 3 1 * Low FIT (Failure in Time) Rate* COMMON CATHODE 3 1 #4 #9 * For more information see the Surface Mount Schottky Reliability Data Sheet. 2 CROSS-OVER QUAD 3 4 1 * Lead-free Option Available 2 Package Lead Code Identification, SOT-363 (Top View) HIGH ISOLATION UNCONNECTED PAIR 6 5 1 2 4 K 3 COMMON CATHODE QUAD SINGLE SERIES B COMMON ANODE C COMMON CATHODE E F 6 5 1 2 6 1 4 M 3 BRIDGE QUAD 5 2 P UNCONNECTED TRIO 6 5 1 2 4 L 3 COMMON ANODE QUAD 6 5 1 2 4 6 3 1 4 N 3 RING QUAD 5 2 4 R 3 Pin Connections and Package Marking 2 6 GUx 1 5 3 4 Notes: 1. Package marking provides orientation and identification. 2. See "Electrical Specifications" for appropriate package marking. Absolute Maximum Ratings[1] TC = 25C Symbol Parameter Unit SOT-23/SOT-143 SOT-323/SOT-363 If Forward Current (1 s Pulse) Amp 1 1 PIV Peak Inverse Voltage V 15 15 Tj Junction Temperature C 150 150 Tstg Storage Temperature C -65 to 150 -65 to 150 jc Thermal Resistance C/W 500 150 [2] Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. TC = +25C, where TC is defined to be the temperature at the package pins where contact is made to the circuit board. Electrical Specifications TC = 25C, Single Diode[3] Maximum Maximum Minimum Maximum Forward Reverse Part Package Breakdown Forward Voltage Leakage Maximum Number Marking Lead Voltage Voltage VF (V) @ IR (nA) @ Capacitance HSMS[4] Code Code Configuration VBR (V) VF (mV) IF (mA) VR (V) CT (pF) 2820 C0 0 2822 C2 2 2823 C3 3 2824 C4 4 2825 C5 5 2827 C7 7 2828 C8 8 2829 C9 9 282B C0 B 282C C2 C 282E C3 E 282F C4 F 282K CK K 282L CL L 282M HH M 282N NN N 282P CP P 282R OO R Single Series Common Anode Common Cathode Unconnected Pair Ring Quad[4] Bridge Quad[4] Cross-over Quad Single Series Common Anode Common Cathode High Isolation Unconnected Pair Unconnected Trio Common Cathode Quad Common Anode Quad Bridge Quad Ring Quad 15 340 0.5 10 100 Test Conditions IR = 100 mA IF = 1 mA[1] Notes: 1. VF for diodes in pairs and quads in 15 mV maximum at 1 mA. 2. CTO for diodes in pairs and quads is 0.2 pF maximum. 3. Effective Carrier Lifetime () for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA. 4. See section titled "Quad Capacitance." 5. RD = RS + 5.2 at 25C and If = 5 mA. 1 Typical Dynamic Resistance RD ()[5] 1.0 12 VR = 0V[2] f = 1 MHz IF = 5 mA Quad Capacitance Linear Equivalent Circuit Model Diode Chip Capacitance of Schottky diode quads is measured using an HP4271 LCR meter. This instrument effectively isolates individual diode branches from the others, allowing ac curate capacitance measurement of each branch or each diode. The conditions are: 20 mV R.M.S. voltage at 1 MHz. Avago defines this measurement as "CM", and it is equiva lent to the capacitance of the diode by itself. The equiva lent diagonal and adjacent capaci-tances can then be cal culated by the formulas given below. In a quad, the diagonal capacitance is the capacitance be tween points A and B as shown in the figure below. The diagonal capacitance is calculated using the following formula C3 x C 4 C1 x C 2 C DIAGONAL = _______ + _______ C1 + C 2 C3 + C4 The equivalent is the capacitance C2 Ccapacitance C 1 xadjacent 3xC 4 C DIAGONAL = _______ + _______ between A____________ and C in1 the figure below. This capaci =C + C ADJACENT points C 11 + C 2 C3 + C4 tance is calculated using formula 1 the 1 following 1 -- + -- + -- 1 3 C4 C2 C C ADJACENT = C 1 + ____________ 1 1 1 -- -5+ nT -- + -- 8.33 X 10 Rj= I +C I 2 C 3 C4 b s This information 8.33 does X 10 -5not nT apply to cross-over quad di Rj= odes. I b+ Is C1 C3 A C C2 C4 B Rj RS Cj RS = series resistance (see Table of SPICE parameters) C j = junction capacitance (see Table of SPICE parameters) Rj = 8.33 X 10-5 nT Ib + Is where Ib = externally applied bias current in amps Is = saturation current (see table of SPICE parameters) T = temperature, K n = ideality factor (see table of SPICE parameters) Note: To effectively model the packaged HSMS-282x product, please refer to Application Note AN1124. ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge. SPICE Parameters Parameter Units HSMS-282x BV V 15 CJ0 pF 0.7 EG eV 0.69 IBV A 1E-4 IS A 2.2E-8 N 1.08 RS 6.0 PB V 0.65 PT 2 M 0.5 Typical Performance, TC = 25C (unless otherwise noted), Single Diode 0.1 0.8 0.20 0.30 0.40 100 TA = +125C TA = +75C TA = +25C 10 1 0.50 0 5 IF - FORWARD CURRENT (mA) RD - DYNAMIC RESISTANCE () 100 10 10 IF (Left Scale) 10 10 VF (Right Scale) 1 0.3 100 2 0.2 0.4 0.6 0.8 1.0 1.2 1 6 8 1.0 IF (Left Scale) 10 VF (Right Scale) 1 0.10 0.3 1.4 0.15 0.1 0.25 0.20 VF - FORWARD VOLTAGE (V) Figure 5. Typical Vf Match, Series Pairs and Quads at Mixer Bias Levels. 1 4 100 VF - FORWARD VOLTAGE (V) Figure 4. Dynamic Resistance vs. Forward Current. Figure 6. Typical Vf Match, Series Pairs at Detector Bias Levels. 10 -25C +25C +75C 0.1 RF in 0.01 18 nH 3.3 nH -30 10 1 DC bias = 3 A -20 HSMS-282B 100 pF -10 Vo 100 K 0 Pin - INPUT POWER (dBm) Figure 7. Typical Output Voltage vs. Input Power, Small Signal Detector Operating at 850 MHz. VO - OUTPUT VOLTAGE (V) VO - OUTPUT VOLTAGE (V) 0 Figure 3. Total Capacitance vs. Reverse Voltage. 30 IF - FORWARD CURRENT (mA) 0 VR - REVERSE VOLTAGE (V) 30 1000 1 0.2 15 Figure 2. Reverse Current vs. Reverse Voltage at Temperatures. Figure 1. Forward Current vs. Forward Voltage at Temperatures. 1 0.1 0.4 VR - REVERSE VOLTAGE (V) VF - FORWARD VOLTAGE (V) 0.001 -40 10 0.6 IF - FORWARD CURRENT (A) 0.10 1000 0.1 0.01 0.001 +25C 68 0.0001 1E-005 -20 HSMS-282B RF in -10 Vo 100 pF 0 10 CONVERSION LOSS (dB) 0 10,000 VF - FORWARD VOLTAGE DIFFERENCE (mV) 1 0.01 1 VF - FORWARD VOLTAGE DIFFERENCE (mV) 10 100,000 CT - CAPACITANCE (pF) TA = +125C TA = +75C TA = +25C TA = -25C IR - REVERSE CURRENT (nA) IF - FORWARD CURRENT (mA) 100 9 8 7 4.7 K 20 30 Pin - INPUT POWER (dBm) Figure 8. Typical Output Voltage vs. Input Power, Large Signal Detector Operating at 915 MHz. 6 0 2 4 6 8 10 12 LOCAL OSCILLATOR POWER (dBm) Figure 9. Typical Conversion Loss vs. L.O. Drive, 2.0 GHz (Ref AN997). Applications Information Product Selection Avago's family of surface mount Schottky diodes provide unique solutions to many design problems. Each is opti mized for certain applications. The first step in choosing the right product is to select the diode type. All of the products in the HSMS282x fam ily use the same diode chip-they differ only in package configuration. The same is true of the HSMS-280x, -281x, 285x, -286x and -270x families. Each family has a different set of characteristics, which can be compared most easily by consulting the SPICE parameters given on each data sheet. The HSMS282x family has been optimized for use in RF applications, such as * DC biased small signal detectors to 1.5 GHz. * Biased or unbiased large signal detectors (AGC or power monitors) to 4 GHz. * Mixers and frequencymultipliers to 6 GHz. The other feature of the HSMS282x family is its unittounit and lottolot consistency. The silicon chip used in this series has been designed to use the fewest possible pro cessing steps to minimize variations in diode characteris tics. Statistical data on the consistency of this product, in terms of SPICE parameters, is available from Avago. For those applications requiring very high breakdown voltage, use the HSMS280x family of diodes. Turn to the HSMS281x when you need very low flicker noise. The HSMS285x is a family of zero bias detector diodes for small signal applications. For high frequency detector or mixer applications, use the HSMS286x family. The HSMS270x is a series of specialty diodes for ultra high speed clipping and clamping in digital circuits. Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a metal-semiconductor barrier formed by de position of a metal layer on a semiconductor. The most common of several different types, the passivated diode, is shown in Figure 10, along with its equivalent circuit. RS is the parasitic series resistance of the diode, the sum of the bondwire and leadframe resistance, the resistance of the bulk layer of silicon, etc. RF energy coupled into RS is lost as heat--it does not contribute to the rectified out put of the diode. CJ is parasitic junction capacitance of the diode, controlled by the thick-ness of the epitaxial layer and the diameter of the Schottky contact. Rj is the junc tion resistance of the diode, a function of the total current flowing through it. 8.33 X 10 -5 nT R j = ------------ = R V - R I S+Ib 0.026 ----- at 25 C I S+Ib V - IR where -----S I = I S (e 0.026 - 1) n = ideality factor (see table of SPICE parameters) T = temperature in K IS = saturation current (see table of SPICE parameters) Ib = externally applied bias current in amps Rv = sum of junction and series resistance, the slope of the V-I curve IS is a function of diode barrier height, and can range from picoamps for high barrier diodes to as much as 5 A for -5 nT very low8.33 barrier diodes. X 10 R j = ------------ = R V - R s +Ib The Height ofI theS Schottky Barrier The current-voltage characteristic of a Schottky barrier 0.026 temperature is described by the following diode at room ----- at 25 C equation:I S + I b I = I S (e V - IR 0.026 -----S - 1) On a semi-log plot (as shown in the Avago catalog) the current graph will be a straight line with inverse slope 2.3 X 0.026 = 0.060 volts per cycle (until the effect of RS is seen in a curve that droops at high current). All Schottky diode curves have the same slope, but not necessarily the same value of current for a given voltage. This is determined by the saturation current, IS, and is related to the barrier height of the diode. Through the choice of p-type or ntype silicon, and the selection of metal, one can tailor the characteristics of a Schottky diode. Barrier height will be altered, and at the same time CJ and RS will be changed. In general, very low barrier height diodes (with high values of IS, suitable for zero bias applications) are realized on p-type silicon. Such diodes suffer from higher values of RS than do the ntype. RS METAL PASSIVATION N-TYPE OR P-TYPE EPI PASSIVATION LAYER SCHOTTKY JUNCTION Cj Rj N-TYPE OR P-TYPE SILICON SUBSTRATE CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP Figure 10. Schottky Diode Chip. s HSMS-285A/6A fig 9 EQUIVALENT CIRCUIT Thus, p-type diodes are generally reserved for detector applications (where very high values of RV swamp out high RS) and n-type diodes such as the HSMS-282x are used for mixer applications (where high L.O. drive levels keep RV low). DC biased detectors and self-biased detec tors used in gain or power control circuits. Detector Applications Detector circuits can be divided into two types, large signal (Pin > 20 dBm) and small signal (Pin < 20 dBm). In general, the former use resistive impedance matching at the in put to improve flatness over frequency -- this is possible since the input signal levels are high enough to produce adequate output voltages without the need for a high Q reactive input matching network. These circuits are selfbiased (no external DC bias) and are used for gain and power control of amplifiers. Small signal detectors are used as very low cost receivers, and require a reactive input impedance matching net work to achieve adequate sensitivity and output voltage. Those operating with zero bias utilize the HSMS 285x family of detector diodes. However, superior performance over temperature can be achieved with the use of 3 to 30 A of DC bias. Such circuits will use the HSMS282x family of diodes if the operating frequency is 1.5 GHz or lower. Typical performance of single diode detectors (using HSMS2820 or HSMS282B) can be seen in the transfer curves given in Figures 7 and 8. Such detectors can be re alized either as series or shunt circuits, as shown in Figure 11. DC Bias Shunt inductor provides video signal return Shunt diode provides video signal return * The two diodes are in parallel in the RF circuit, lowering the input impedance and making the design of the RF matching network easier. * The two diodes are in series in the output (video) circuit, doubling the output voltage. * Some cancellation of evenorder harmonics takes place at the input. DC Bias Zero Biased Diodes Figure 12. Voltage Doubler. The most compact and lowest cost form of the doubler is achieved when the HSMS2822 or HSMS-282C series pair is used. Both the detection sensitivity and the DC forward voltage of a biased Schottky detector are temperature sensitive. Where both must be compensated over a wide range of temperatures, the differential detector[2] is often used. Such a circuit requires that the detector diode and the reference diode exhibit identical characteristics at all DC bias levels and at all temperatures. This is accomplished through the use of two diodes in one package, for exam ple the HSMS2825 in Figure 13. In the Avago assembly facility, the two dice in a surface mount package are taken from adjacent sites on the wafer (as illustrated in Figure 14). This assures that the characteristics of the two diodes are more highly matched than would be possible through individual testing and hand matching. RF in DC Bias DC Biased Diodes RF impedance matching network +3V Zero Biased Diodes RL RM differential amplifier Video out RL DC Biased Diodes Figure 11. Single Diode Detectors. The series and shunt circuits can be combined into a volt age doubler[1], as shown in Figure 12. The doubler offers three advantages over the single diode circuit. Figure 13. Differential Detector. [1] Avago Application Note 9564, "Schottky Diode Voltage Doubler." [2] Raymond W. Waugh, "Designing LargeSignal Detectors for Handsets and Base Stations," Wireless Systems Design, Vol. 2, No. 7, July 1997, pp 42 - 48. bias differential amplifier matching network HSMS-282P Figure 14. Fabrication of Avago Diode Pairs. Figure 17. Voltage Doubler Differential Detector. In high power applications, coupling of RF energy from the detector diode to the reference diode can introduce error in the differential detector. The HSMS282K diode pair, in the six lead SOT363 package, has a copper bar between the diodes that adds 10 dB of additional isola tion between them. As this part is manufactured in the SOT363 package it also provides the benefit of being 40% smaller than larger SOT143 devices. The HSMS282K is illustrated in Figure 15 -- note that the ground connec tions must be made as close to the package as possible to minimize stray inductance to ground. However, care must be taken to assure that the two refer ence diodes closely match the two detector diodes. One possible configuration is given in Figure 16, using two HSMS2825. Board space can be saved through the use of the HSMS282P open bridge quad, as shown in Figure 17. PA detector diode Vbias While the differential detector works well over tempera ture, another design approach[3] works well for large signal detectors. See Figure 18 for the schematic and a physical layout of the circuit. In this design, the two 4.7 K resis tors and diode D2 act as a variable power divider, assuring constant output voltage over temperature and improving output linearity. RF in D1 68 4.7 K 33 pF Vo 4.7 K D2 68 HSMS-282K reference diode to differential amplifier Figure 15. High Power Differential Detector. The concept of the voltage doubler can be applied to the differential detector, permitting twice the output voltage for a given input power (as well as improving input im pedance and suppressing second harmonics). bias differential amplifier HSMS-2825 matching network HSMS-2825 Figure 16. Voltage Doubler Differential Detector. HSMS-2825 or HSMS-282K 33 pF RFin HSMS-282K Vo 4.7 K Figure 18. Temperature Compensated Detector. In certain applications, such as a dualband cellphone handset operating at both 900 and 1800 MHz, the second harmonics generated in the power control output detec tor when the handset is working at 900 MHz can cause problems. A filter at the output can reduce unwanted emissions at 1800 MHz in this case, but a lower cost so lution is available[4]. Illustrated schematically in Figure 19, this circuit uses diode D2 and its associated passive components to cancel all even order harmonics at the detector's RF input. Diodes D3 and D4 provide tempera ture compensation as described above. All four diodes are contained in a single HSMS 282R package, as illustrated in the layout shown in Figure 20. [3] Hans Eriksson and Raymond W. Waugh, "A Temperature Compensated Linear Diode Detector," to be published. D1 RF in 68 D2 R1 V+ HSMS-2829 R3 V- R2 C1 R4 C2 D3 RF in LO in D4 C1 = C2 100 pF R1 = R2 = R3 = R4 = 4.7 K D1 & D2 & D3 & D4 = HSMS-282R IF out Figure 19. Schematic of Suppressed Harmonic Detector. HSMS-282R 4.7 K 4.7 K V+ V- 100 pF 100 pF RF in 68 Figure 20. Layout of Suppressed Harmonic Detector. Note that the forgoing discussion refers to the output volt age being extracted at point V+ with respect to ground. If a differential output is taken at V+ with respect to V, the circuit acts as a voltage doubler. Figure 22. Planar Double Balanced Mixer. A review of Figure 21 may lead to the question as to why the HSMS282R ring quad is open on the ends. Distor tion in double balanced mixers can be reduced if LO drive is increased, up to the point where the Schottky diodes are driven into saturation. Above this point, increased LO drive will not result in improvements in distortion. The use of expensive high barrier diodes (such as those fabricated on GaAs) can take advantage of higher LO drive power, but a lower cost solution is to use a eight (or twelve) diode ring quad. The open design of the HSMS-282R permits this to easily be done, as shown in Figure 23. LO in RF in Mixer applications The HSMS282x family, with its wide variety of packaging, can be used to make excellent mixers at frequencies up to 6 GHz. The HSMS2827 ring quad of matched diodes (in the SOT143 package) has been designed for double balanced mixers. The smaller (SOT363) HSMS-282R ring quad can similarly be used, if the quad is closed with external connections as shown in Figure 21. LO in HSMS-282R HSMS-282R IF out Figure 23. Low Distortion Double Balanced Mixer. This same technique can be used in the single-balanced mixer. Figure 24 shows such a mixer, with two diodes in each spot normally occupied by one. This mixer, with a sufficiently high LO drive level, will display low distortion. HSMS-282R RF in RF in 180 hybrid Low pass filter IF out LO in Figure 24. Low Distortion Balanced Mixer. IF out Figure 21. Double Balanced Mixer. Both of these networks require a crossover or a three di mensional circuit. A planar mixer can be made using the SOT143 crossover quad, HSMS2829, as shown in Figure 22. In this product, a special lead frame permits the cross over to be placed inside the plastic package itself, elimi nating the need for via holes (or other measures) in the RF portion of the circuit itself. [4] Alan Rixon and Raymond W. Waugh, "A Suppressed Harmonic Power Detector for Dual Band `Phones," to be published. Sampling Applications The six lead HSMS282P can be used in a sampling circuit, as shown in Figure 25. As was the case with the six lead HSMS282R in the mixer, the open bridge quad is closed with traces on the circuit board. The quad was not closed internally so that it could be used in other applications, such as illustrated in Figure 17. sample point HSMS-282P sampling pulse Note that jc, the thermal resistance from diode junction to the foot of the leads, is the sum of two component re sistances, jc = pkg + chip Package thermal resistance for the SOT3x3 package is ap proximately 100C/W, and the chip thermal resistance for the HSMS282x family of diodes is approximately 40C/W. The designer will have to add in the thermal resistance from diode case to ambient -- a poor choice of circuit board material or heat sink design can make this number very high. Equation (1) would be straightforward to solve but for the fact that diode forward voltage is a function of tempera ture as well as forward current. The equation for Vf is: sampling circuit Figure 25. Sampling Circuit. Thermal Considerations The obvious advantage of the SOT323 and SOT363 over the SOT23 and SOT142 is combination of smaller size and extra leads. However, the copper leadframe in the SOT3x3 has a thermal conductivity four times higher than the Alloy 42 leadframe of the SOT23 and SOT143, which enables the smaller packages to dissipate more power. The maximum junction temperature for these three fami lies of Schottky diodes is 150C under all operating con ditions. The following equation applies to the thermal analysis of diodes: Tj = (Vf If + PRF) jc + Ta where Tj = junction temperature Ta = diode case temperature jc = thermal resistance V f I f = DC power dissipated PRF = RF power dissipated (2) 11600 (V f - I f R s ) nTf - I f R s ) - 1 e 11600 (V nT e -1 If = I S If = I S (3) where n = ideality factor T = temperature in K Rs = diode series resistance and IS (diode saturation current) is given by (1) Is = I0 Is = I0 2 n - 4060 T 2e n - 4060 298 T ( ) ( 298 ) e ( 11T (T 1 298 1 - 298 - ) ) (4) Equation (4) is substituted into equation (3), and equa tions (1) and (3) are solved simultaneously to obtain the value of junction temperature for given values of diode case temperature, DC power dissipation and RF power dissipation. Diode Burnout Assembly Instructions Any Schottky junction, be it an RF diode or the gate of a MESFET, is relatively delicate and can be burned out with excessive RF power. Many crystal video receivers used in RFID (tag) applications find themselves in poorly con trolled environments where high power sources may be present. Examples are the areas around airport and FAA radars, nearby ham radio operators, the vicinity of a broadcast band transmitter, etc. In such environments, the Schottky diodes of the receiver can be protected by a device known as a limiter diode.[5] Formerly available only in radar warning receivers and other high cost electronic warfare applications, these diodes have been adapted to commercial and consumer circuits. SOT-3x3 PCB Footprint Avago offers a complete line of surface mountable PIN limiter diodes. Most notably, our HSMP-4820 (SOT-23) can act as a very fast (nanosecond) power-sensitive switch when placed between the antenna and the Schottky di ode, shorting out the RF circuit temporarily and reflecting the excessive RF energy back out the antenna. [5] Avago Application Note 1050, "Low Cost, Surface Mount Power Limiters." Recommended PCB pad layouts for the miniature SOT3x3 (SC-70) packages are shown in Figures 26 and 27 (di mensions are in inches). These layouts provide ample al lowance for package placement by automated assembly equipment without adding parasitics that could impair the performance. 0.026 0.079 0.039 0.022 Dimensions in inches Figure 26. Recommended PCB Pad Layout for Avago's SC70 3L/SOT323 Products. 0.026 0.079 0.039 0.018 Dimensions in inches Figure 27. Recommended PCB Pad Layout for Avago's SC70 6L/SOT363 Products. 10 SMT Assembly Reliable assembly of surface mount components is a com plex process that involves many material, process, and equipment factors, including: method of heating (e.g., IR or vapor phase reflow, wave soldering, etc.) circuit board material, conductor thickness and pattern, type of solder alloy, and the thermal conductivity and thermal mass of components. Components with a low mass, such as the SOT packages, will reach solder reflow temperatures fast er than those with a greater mass. Avago's diodes have been qualified to the time-tempera ture profile shown in Figure 28. This profile is representa tive of an IR reflow type of surface mount assembly pro cess. After ramping up from room temperature, the circuit board with components attached to it (held in place with solder paste) passes through one or more preheat zones. The preheat zones increase the temperature of the board and components to prevent thermal shock and begin evaporating solvents from the solder paste. The reflow zone briefly elevates the temperature sufficiently to pro duce a reflow of the solder. The rates of change of temperature for the ramp-up and cool-down zones are chosen to be low enough to not cause deformation of the board or damage to compo nents due to thermal shock. The maximum temperature in the reflow zone (TMAX) should not exceed 260C. These parameters are typical for a surface mount assem bly process for Avago diodes. As a general guideline, the circuit board and components should be exposed only to the minimum temperatures and times necessary to achieve a uniform reflow of solder. tp Tp Critical Zone T L to Tp Ramp-up Temperature TL Ts Ts tL max min Ramp-down ts Preheat 25 t 25 C to Peak Time Figure 28. Surface Mount Assembly Profile. Lead-Free Reflow Profile Recommendation (IPC/JEDEC J-STD-020C) Reflow Parameter Lead-Free Assembly Average ramp-up rate (Liquidus Temperature (TS(max) to Peak) 3C/ second max Preheat Temperature Min (TS(min)) 150C Temperature Max (TS(max)) 200C Time (min to max) (tS) 60-180 seconds Ts(max) to TL Ramp-up Rate Time maintained above: 3C/second max Temperature (TL) 217C Time (tL) 60-150 seconds Peak Temperature (TP) 260 +0/-5C Time within 5 C of actual Peak temperature (tP) 20-40 seconds Ramp-down Rate 6C/second max Time 25 C to Peak Temperature 8 minutes max Note 1: All temperatures refer to topside of the package, measured on the package body surface 11 Package Dimensions Outline SOT-323 (SC-70 3 Lead) Outline 23 (SOT-23) e1 e2 e1 XXX E XXX E E1 E1 e e L B L C D B DIMENSIONS (mm) C DIMENSIONS (mm) D A A1 Notes: XXX-package marking Drawings are not to scale SYMBOL A A1 B C D E1 e e1 e2 E L MIN. 0.79 0.000 0.30 0.08 2.73 1.15 0.89 1.78 0.45 2.10 0.45 MAX. 1.20 0.100 0.54 0.20 3.13 1.50 1.02 2.04 0.60 2.70 0.69 Outline 143 (SOT-143) A A1 Notes: XXX-package marking Drawings are not to scale SYMBOL A A1 B C D E1 e e1 E L MIN. MAX. 0.80 1.00 0.00 0.10 0.15 0.40 0.08 0.25 1.80 2.25 1.10 1.40 0.65 typical 1.30 typical 1.80 2.40 0.26 0.46 Outline SOT-363 (SC-70 6 Lead) e2 DIMENSIONS (mm) e1 HE B1 E XXX SYMBOL E D HE A A2 A1 e b c L E E1 e D L B e C A1 A Notes: XXX-package marking Drawings are not to scale 12 A2 DIMENSIONS (mm) D A1 MIN. MAX. 1.15 1.35 1.80 2.25 1.80 2.40 0.80 1.10 0.80 1.00 0.00 0.10 0.650 BCS 0.15 0.30 0.08 0.25 0.10 0.46 SYMBOL A A1 B B1 C D E1 e e1 e2 E L MIN. 0.79 0.013 0.36 0.76 0.086 2.80 1.20 0.89 1.78 0.45 2.10 0.45 MAX. 1.097 0.10 0.54 0.92 0.152 3.06 1.40 1.02 2.04 0.60 2.65 0.69 b c A L Device Orientation For Outlines SOT-23, -323 REEL TOP VIEW END VIEW 4 mm CARRIER TAPE 8 mm USER FEED DIRECTION ABC For Outline SOT-143 ABC For Outline SOT-363 TOP VIEW END VIEW TOP VIEW 4 mm END VIEW 4 mm ABC ABC ABC ABC Note: "AB" represents package marking code. "C" re presents date code. 13 ABC Note: "AB" represents package marking code. "C" represents date code. COVER TAPE 8 mm ABC 8 mm ABC ABC ABC ABC Note: "AB" represents package marking code. "C" represents date code. Tape Dimensions and Product Orientation For Outline SOT-23 P P2 D E P0 F W D1 t1 Ko 9 MAX 13.5 MAX 8 MAX B0 A0 DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A0 B0 K0 P D1 3.15 0.10 2.77 0.10 1.22 0.10 4.00 0.10 1.00 + 0.05 0.124 0.004 0.109 0.004 0.048 0.004 0.157 0.004 0.039 0.002 PERFORATION DIAMETER PITCH POSITION D P0 E 1.50 + 0.10 4.00 0.10 1.75 0.10 0.059 + 0.004 0.157 0.004 0.069 0.004 CARRIER TAPE WIDTH THICKNESS W t1 8.00 + 0.30 - 0.10 0.229 0.013 0.315 +0.012 - 0.004 0.009 0.0005 DISTANCE BETWEEN CENTERLINE CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 0.05 0.138 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 0.05 0.079 0.002 For Outline SOT-143 P D P2 P0 E F W D1 t1 9 M A X 9 MAX K0 A0 B0 DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A0 B0 K0 P D1 3.19 0.10 2.80 0.10 1.31 0.10 4.00 0.10 1.00 + 0.25 0.126 0.004 0.110 0.004 0.052 0.004 0.157 0.004 0.039 + 0.010 PERFORATION DIAMETER PITCH POSITION D P0 E 1.50 + 0.10 4.00 0.10 1.75 0.10 0.059 + 0.004 0.157 0.004 0.069 0.004 CARRIER TAPE WIDTH THICKNESS W t1 8.00 +0.30 - 0.10 0.254 0.013 0.315+0.012 - 0.004 0.0100 0.0005 DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 0.05 0.138 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 0.05 0.079 0.002 14 Tape Dimensions and Product Orientation For Outlines SOT-323, -363 P P2 D P0 E F W C D1 t 1 (CARRIER TAPE THICKNESS) K0 An A0 An B0 SYMBOL SIZE (mm) SIZE (INCHES) CAVITY DESCRIPTION LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A0 B0 K0 P D1 2.40 0.10 2.40 0.10 1.20 0.10 4.00 0.10 1.00 + 0.25 0.094 0.004 0.094 0.004 0.047 0.004 0.157 0.004 0.039 + 0.010 PERFORATION DIAMETER PITCH POSITION D P0 E 1.55 0.05 4.00 0.10 1.75 0.10 0.061 0.002 0.157 0.004 0.069 0.004 CARRIER TAPE WIDTH THICKNESS W t1 8.00 0.30 0.254 0.02 0.315 0.012 0.0100 0.0008 COVER TAPE WIDTH TAPE THICKNESS C Tt 5.4 0.10 0.062 0.001 0.205 0.004 0.0025 0.00004 DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 0.05 0.138 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 0.05 0.079 0.002 FOR SOT-323 (SC70-3 LEAD) An ANGLE Tt (COVER TAPE THICKNESS) FOR SOT-363 (SC70-6 LEAD) 8 C MAX 10 C MAX Part Number Ordering Information Part Number No. of Devices Container HSMS-282x-TR2G 10000 13" Reel HSMS-282x-TR1G 3000 7" Reel HSMS-282x-BLKG 100 antistatic bag x = 0, 2, 3, 4, 5, 7, 8, 9, B, C, E, F, K, L, M, N, P or R For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright (c) 2005-2009 Avago Technologies. All rights reserved. Obsoletes 5989-4030EN AV02-1320EN - May 28, 2009