APT30M19JVFR 130A 0.019 300V POWER MOS V (R) S S FREDFET Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. 27 2 T- D G SO ISOTOP(R) * Fast Recovery Body Diode * 100% Avalanche Tested D FREDFET * Lower Leakage * Popular SOT-227 Package G * Faster Switching S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter APT30M19JVFR UNIT 300 Volts Drain-Source Voltage 130 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 700 Watts Linear Derating Factor 5.6 W/C VGSM PD TJ,TSTG 520 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 130 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 50 4 mJ 3600 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, I D = 250A) 300 Volts 130 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP (VGS = 10V, 0.5 ID[Cont.]) MAX 0.019 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 UNIT Ohms A Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 5mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA APT Website - http://www.advancedpower.com 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord 050-5604 Rev B Symbol APT30M19JVFR DYNAMIC CHARACTERISTICS Characteristic Symbol Test Conditions MIN TYP MAX Ciss Input Capacitance VGS = 0V 18000 21600 Coss Output Capacitance VDS = 25V 3250 4550 Crss Reverse Transfer Capacitance f = 1 MHz 980 1470 Qg Total Gate Charge VGS = 10V 650 975 Qgs Gate-Source Charge VDD = 0.5 VDSS Qgd Gate-Drain ("Miller") Charge ID = ID [Cont.] @ 25C 115 290 175 435 VGS = 15V 22 44 t d(on) 3 Turn-on Delay Time tr Rise Time t d(off) Turn-off Delay Time tf VDD = 0.5 VDSS 33 66 ID = ID [Cont.] @ 25C 70 135 RG = 0.6 10 20 TYP MAX Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions IS ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ MIN 130 Continuous Source Current (Body Diode) Peak Diode Recovery dt dv/ 520 (Body Diode) dt (VGS = 0V, IS = -ID [Cont.]) 5 UNIT Amps 1.3 Volts 5 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 200 300 Tj = 125C 250 525 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 1.5 Tj = 125C 4.4 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 15 Tj = 125C 25 ns C Amps THERMAL / PACKAGE CHARACTERISTICS Characteristic Symbol MIN TYP MAX 0.18 RJC Junction to Case RJA Junction to Ambient 40 VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 2500 13 0.2 0.1 0.01 0.005 0.05 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-5604 Rev B 0.2 0.05 0.01 SINGLE PULSE 0.0005 10-5 t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.001 10-4 lb*in 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 426H, R = 25, Peak I = 130A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt VR = 200V D=0.5 C/W Volts APT Reserves the right to change, without notice, the specifications and information contained herein. 0.1 UNIT 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT30M19JVFR 360 VGS=8V, 9V, 10V & 15V 300 7V 240 6.5V 180 6V 120 5.5V 60 5V ID, DRAIN CURRENT (AMPERES) 4.5V 0 TJ = +25C 300 TJ = +125C 240 VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 180 120 TJ = +125C 60 TJ = +25C TJ = -55C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 150 125 100 75 50 25 0 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 6.5V 180 6V 120 5.5V 60 5V 4.5V 1.15 V 1.10 GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D VGS=10V 1.05 1.00 VGS=20V 0.95 0.90 0 50 100 150 200 250 300 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.20 1.15 1.10 1.05 1.00 0.95 0.90 -50 1.2 I = 0.5 I [Cont.] D D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 240 7V -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 2.5 9V 8V 0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) TJ = -55C 300 0 0 25 50 75 100 125 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 360 VGS=15V 10V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5604 Rev B ID, DRAIN CURRENT (AMPERES) 360 APT30M19JVFR 50,000 10S OPERATION HERE LIMITED BY RDS (ON) Ciss 100S C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 1,000 100 50 1mS 10mS 10 TC =+25C TJ =+150C SINGLE PULSE 5 500 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 20 I = 0.5 I [Cont.] D VDS=60V VDS=150V 12 VDS=240V 8 4 0 Crss 1,000 DC 1 5 10 50 100 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 Coss 5,000 100mS 1 D 10,000 0 200 400 600 800 1000 1200 1400 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 300 TJ =+150C TJ =+25C 100 50 10 5 1 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate 050-5604 Rev B Dimensions in Millimeters and (Inches) VIsolation, RMS Voltage (50-60 Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Minute) = 2500 Volts Minimum ISOTOP(R) is a Registered Trademark of SGS Thomson. "UL Recognized" File No. E145592