APT30M19JVFR - MICROCHIP TECHNOLOGY

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)

On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)

Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])

Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)

Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)

Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)

Gate Threshold Voltage (VDS = VGS, ID = 5mA)

050-5604 Rev B

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

VDSS

IDM

VGS

VGSM

TJ,TSTG

IAR

EAR

EAS

Parameter

Drain-Source Voltage

Continuous Drain Current @ TC = 25°C

Pulsed Drain Current 1

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ TC = 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current 1 (Repetitive and Non-Repetitive)

Repetitive Avalanche Energy 1

Single Pulse Avalanche Energy 4

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BVDSS

ID(on)

RDS(on)

IDSS

IGSS

VGS(th)

UNIT

Volts

Amps

Ohms

µA

Volts

MIN TYP MAX

300

130 0.019

250

1000

±100

APT30M19JVFR

300

130

520

±30

±40

700

5.6

-55 to 150

300

130

3600

APT30M19JVFR

300V 130A 0.019Ω

Power MOS V® is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V®

also achieves faster switching speeds through optimized gate layout.

• Fast Recovery Body Diode • 100% Avalanche Tested

• Lower Leakage • Popular SOT-227 Package

• Faster Switching

SOT-227

ISOTOP

FREDFET

POWER MOS V®

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 55792 1515 FAX: (33) 5 56 47 97 61

APT Website - http://www.advancedpower.com

050-5604 Rev B

ZθJC, THERMAL IMPEDANCE (°C/W)

10-5 10-4 10-3 10-2 10-1 1.0 10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.2

0.1

0.05

0.01

0.005

0.001

0.0005

Note:

Duty Factor D = t1/t2

Peak TJ = PDM x ZθJC + TC

PDM

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01

DYNAMIC CHARACTERISTICS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current 1 (Body Diode)

Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])

Peak Diode Recovery dv/dt 5

Reverse Recovery Time

(IS = -ID [Cont.], di/dt = 100A/µs)

Reverse Recovery Charge

(IS = -ID [Cont.], di/dt = 100A/µs)

Peak Recovery Current

(IS = -ID [Cont.], di/dt = 100A/µs)

Symbol

ISM

VSD

dv/dt

trr

Qrr

IRRM

UNIT

Amps

Volts

V/ns

µC

Amps

Symbol

Ciss

Coss

Crss

Qgs

Qgd

td(on)

td(off)

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 3

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Test Conditions

VGS = 0V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 0.5 VDSS

ID = ID [Cont.] @ 25°C

VGS = 15V

VDD = 0.5 VDSS

ID = ID [Cont.] @ 25°C

RG = 0.6Ω

MIN TYP MAX

18000 21600

3250 4550

980 1470

650 975

115 175

290 435

22 44

33 66

70 135

10 20

UNIT

MIN TYP MAX

130

520

1.3

Tj = 25°C200 300

Tj = 125°C250 525

Tj = 25°C1.5

Tj = 125°C4.4

Tj = 25°C15

Tj = 125°C25

1Repetitive Rating: Pulse width limited by maximum junction 3See MIL-STD-750 Method 3471

temperature. 4Starting Tj = +25°C, L = 426µH, RG = 25Ω, Peak IL = 130A

2Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 5IS ≤ -ID [Cont.], di/dt = 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 2.0Ω,

VR = 200V

APT Reserves the right to change, without notice, the specifications and information contained herein.

THERMAL/PACKAGE CHARACTERISTICS

Symbol

RθJC

RθJA

VIsolation

Torque

MIN TYP MAX

0.18

2500 13

UNIT

°C/W

Volts

lb•in

Characteristic

Junction to Case

Junction to Ambient

RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)

Maximum Torque for Device Mounting Screws and Electrical Terminations.

APT30M19JVFR

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)

(NORMALIZED)

VGS(TH), THRESHOLD VOLTAGE BVDSS, DRAIN-TO-SOURCE BREAKDOWN RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES)

(NORMALIZED) VOLTAGE (NORMALIZED)

050-5604 Rev B

APT30M19JVFR

0 25 50 75 100 125 150 0 1 2 3 4 5

02468 050100150200250300

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

ID = 0.5 ID [Cont.]

VGS = 10V

360

300

240

180

120

1.15

1.10

1.05

1.00

0.95

0.90

1.20

1.15

1.10

1.05

1.00

0.95

0.90

1.2

1.1

1.0

0.9

0.8

0.7

0.6

360

300

240

180

120

360

300

240

180

120

150

125

100

2.5

2.0

1.5

1.0

0.5

0.0

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

VGS=10V

VGS=20V

VGS=8V, 9V, 10V & 15V

5.5V

4.5V

5.5V

4.5V

6.5V

VGS=15V

6.5V

10V

TJ = +25°C

TJ = -55°C

TJ = +125°C

TJ = +25°CTJ = -55°C

NORMALIZED TO

VGS = 10V @ 0.5 ID [Cont.]

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

IDR, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

050-5604 Rev B

APT30M19JVFR

SOT-227 (ISOTOP®) Package Outline

31.5 (1.240)

31.7 (1.248)

Dimensions in Millimeters and (Inches)

7.8 (.307)

8.2 (.322)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

14.9 (.587)

15.1 (.594)

11.8 (.463)

12.2 (.480)

8.9 (.350)

9.6 (.378)

Hex Nut M4

(4 places)

0.75 (.030)

0.85 (.033) 12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)

1.95 (.077)

2.14 (.084)

* Source Drain

Gate

r = 4.0 (.157)

(2 places) 4.0 (.157)

4.2 (.165)

(2 places)

W=4.1 (.161)

W=4.3 (.169)

H=4.8 (.187)

H=4.9 (.193)

(4 places)

3.3 (.129)

3.6 (.143)

* Source

Source terminals are shorted

internally. Current handling

capability is equal for either

Source terminal.

ISOTOP® is a Registered Trademark of SGS Thomson.

"UL Recognized" File No. E145592

TC =+25°C

TJ =+150°C

SINGLE PULSE

OPERATION HERE

LIMITED BY RDS (ON)

1 5 10 50 100 300 .01 .1 1 10 50

0 200 400 600 800 1000 1200 1400 0 0.4 0.8 1.2 1.6 2.0

50,000

10,000

5,000

1,000

500

300

100

VDS=60V

VDS=240V

ID = 0.5 ID [Cont.]

10µS

10mS

100mS

1mS

TJ =+150°C T

=+25°C

Crss

Coss

Ciss

1,000

100

100µS

VDS=150V

VIsolation, RMS Voltage (50-60 Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Minute) = 2500 Volts Minimum