TLP127 TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP127 Programmable Controllers DC-Output Module Telecommunication Unit in mm The TOSHIBA mini flat coupler TLP127 is a small outline coupler, suitable for surface mount assembly. TLP127 consists of a gallium arsenide infrared emitting diode, optically coupled to a darlington photo transistor with an integral base-emitter resistor, and provides 300V VCEO. * Collector-emitter voltage: 300 V (min.) * Current transfer ratio: 1000% (min.) * Isolation voltage: 2500Vrms (min.) * UL recognized: UL1577, file no. E67349 TOSHIBA Weight: 0.09 g Pin Configurations (top view) 1 6 3 4 11-4C1 1 : ANODE 3 : CATHODE 4 : EMITTER 6 : COLLECTOR 1 2002-09-25 TLP127 Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit IF 50 mA IF / C -0.7 (Ta 53C) mA / C Pulse forward current IFP 1 (100s pulse, 100pps) A Reverse voltage VR 5 V Junction temperature Tj 125 C Collector-emitter voltage VCEO 300 V Emitter-collector voltage VECO 0.3 V Collector current IC 150 mA Collector power dissipation PC 150 mW Collector power dissipation derating (Ta 25C) PC / C -1.5 mW / C Tj 125 C Storage temperature range Tstg -55~125 C Operating temperature range Topr -55~100 C Lead soldering temperature Tsol 260 (10s) C Total package power dissipation PT 200 mW Total package power dissipation derating (Ta 25C) PT / C -2.0 mW / C BVS 2500 (AC, 1min., R.H. 60%) Vrms Forward current Detector LED Forward current derating Junction temperature Isolation voltage (Note 1) (Note 1) Device considered a two terminal device: Pins 1, 3 shorted together and pins4, 6 shorted together. 2 2002-09-25 TLP127 Individual Electrical Characteristics (Ta = 25C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5V 10 A Capacitance CT V = 0, f = 1 MHz 30 pF Collector-emitter breakdown voltage V(BR) CEO IC = 0.1 mA 300 V Emitter-collector breakdown voltage V(BR) ECO IE = 0.1 mA 0.3 V VCE = 200 V 10 200 nA VCE = 200 V, Ta = 85C 20 A V = 0, f = 1 MHz 12 pF MIn. Typ. Max. Unit IF = 1mA, VCE = 1 V 1000 4000 % IF = 10 mA, VCE = 1 V 500 % IC = 10 mA, IF = 1 mA 1.0 IC = 100 mA, IF = 10 mA 0.3 1.2 Test Condition Min. Typ. Max. Unit 0.8 pF 5x1010 1014 2500 AC, 1 second, in oil 5000 DC, 1 minute, in oil 5000 Collector dark current ICEO Capacitance collector to emitter CCE Coupled Electrical Characteristics (Ta = 25C) Characteristic Current transfer ratio Saturated CTR Collector-emitter saturation voltage Symbol IC / IF IC / IF (sat) VCE (sat) Test Condition V Isolation Characteristics (Ta = 25C) Characteristic Symbol Capacitance (input to output) CS VS = 0, f = 1 MHz Isolation resistance RS VS = 500 V, R.H. 60% AC, 1 minute Isolation voltage BVS 3 Vrms Vdc 2002-09-25 TLP127 Switching Characteristics (Ta = 25C) Characteristic Symbol Rise time tr Fall time tf Turn-on time Test Condition VCC = 10 V, IC = 10 mA RL = 100 ton Min. Typ. Max. 40 15 50 Turn-off time toff 15 Turn-on time tON 5 Storage time ts 40 Turn-off time tOFF 80 RL = 180 VCC = 10 V, IF = 16 mA (Fig.1) Unit s s Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC 200 V Forward current IF 16 25 mA Collector current IC 120 mA Topr -25 85 C Operating temperature Fig. 1 Switching time test circuit IF RL IF VCC ts VCE VCE tON 4 VCC 9V 1V tOFF 2002-09-25 TLP127 IF - Ta PC - Ta 200 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) 100 80 60 40 20 0 -20 0 40 20 60 80 100 160 120 80 40 0 -20 120 0 40 20 Pulse width 100ms Forward current Pulse forward current 300 100 50 30 10-3 10-2 3 10-1 3 Ta = 25C 50 Ta = 25C 500 10 3 30 10 5 3 1 0.5 0.3 100 3 Duty cycle ratio DR 0.1 0.6 0.8 1.0 1.2 Forward voltage 1.4 1.6 1.8 2.6 3.0 VF (V) IFP - VFP -2.8 (mA) -2.4 IFP 1000 -2.0 Pulse forward current Forward voltage temperature coefficient VF / Ta (mV / C) VF / Ta - IF -3.2 -1.6 -1.2 -0.8 -0.4 0.1 120 IF - VF 100 IF (mA) IFP (mA) IFP - DR 1000 100 80 Ambient temperature Ta (C) Ambient temperature Ta (C) 3000 60 0.3 0.5 1 3 Forward current 5 10 30 500 300 100 50 30 10 IF (mA) Repetitive 3 1 0.6 50 Pulse width 10ms 5 Frequency = 100Hz Ta = 25C 1.0 1.4 1.8 2.2 Pulse forward voltage VFP 5 (V) 2002-09-25 TLP127 IC - VCE 160 Ta = 25C IC - IF 300 10mA IC (mA) 120 Collector current Collector current IC (mA) 4mA 2mA 80 1mA 40 Sample A 100 50 30 Sample B 10 5 Ta = 25C 3 VCE = 1.2V IF = 0.5mA 0 0.4 0.8 1.6 1.2 VCE = 1V 1 2.0 0.5 1 3 Forward current Collector-emitter voltage VCE (V) Switching Time - RL 30 10000 Ta = 25C Ta = 25C Sample A VCE = 1.2V VCE = 1V 5000 300 (%) tOFF(IF = 16mA) Current transfer ratio IC / IF 100 tOFF(IF = 1.6mA) 50 100 IF (mA) VCC = 10V 500 50 IC / IF - IF 1000 Switching time (ms) 10 5 30 tON(IF = 1.6mA) 10 5 3 3000 Sample B 1000 500 300 tON(IF = 16mA) 1 50 100 300 500 1k Load resistance RL 3k 5k 100 0.3 10k 0.5 1 3 5 Forward current (kW) 6 10 30 50 IF (mA) 2002-09-25 TLP127 0 (mA) 120 100 80 10 VCE = 1V IF = 10mA 60 40 1mA 20 0 -40 -1 -20 0 20 40 60 80 100 80 100 Ambient temperature Ta () VCE = 200V 150V 10 80V -2 VCE(sat) - Ta 1.2 10 10 Collector-emitter saturation voltage VCE(sat) (V) Collector dark current ICEO (mA) 10 IC - Ta ICEO - Ta 1 Collector current IC 10 -3 IF = 1mA IC = 10mA 1.0 0.8 0.6 0.4 0.2 -4 0 20 40 60 80 0 -40 100 Ambient temperature Ta () -20 0 20 40 60 Ambient temperature Ta () 7 2002-09-25 TLP127 RESTRICTIONS ON PRODUCT USE 000707EBC * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. * The products described in this document are subject to the foreign exchange and foreign trade laws. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 8 2002-09-25