TLP127
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP127
Programmable Controllers
DC−Output Module
Telecommunication
The TOSHIBA mini flat coupler TLP127 is a small outline coupler,
suitable for surface mount assembly.
TLP127 consists of a gallium arsenide infrared emitting diode, optically
coupled to a darlington photo transistor with an integral base−emitter
resistor, and provides 300V VCEO.
· Collector−emitter voltage: 300 V (min.)
· Current transfer ratio: 1000% (min.)
· Isolation voltage: 2500Vrms (min.)
· UL recognized: UL1577, file no. E67349
Pin Configurations (top view)
TOSHIBA 11−4C1
Weight: 0.09 g
Unit in mm
1 : ANODE
3 : CATHODE
4 : EMITTER
6 : COLLECTOR
6
4
3
1
TLP127
2002-09-25
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Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current IF 50 mA
Forward current derating ∆IF / °C -0.7 (Ta ≥ 53°C) mA / °C
Pulse forward current IFP 1 (100µs pulse, 100pps) A
Reverse voltage VR 5 V
LED
Junction temperature Tj 125 °C
Collector-emitter voltage VCEO 300 V
Emitter-collector voltage VECO 0.3 V
Collector current IC 150 mA
Collector power dissipation PC 150 mW
Collector power dissipation
derating (Ta ≥ 25°C) ∆PC / °C -1.5 mW / °C
Detector
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
Operating temperature range Topr -55~100 °C
Lead soldering temperature Tsol 260 (10s) °C
Total package power dissipation PT 200 mW
Total package power dissipation
derating (Ta ≥ 25°C) ∆PT / °C -2.0 mW / °C
Isolation voltage (Note 1) BVS 2500 (AC, 1min., R.H.≤ 60%) Vrms
(Note 1) Device considered a two terminal device: Pins 1, 3 shorted together and pins4, 6 shorted together.
TLP127
2002-09-25
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Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF I
F = 10 mA 1.0 1.15 1.3 V
Reverse current IR VR = 5V ― ― 10 µA
LED
Capacitance CT V = 0, f = 1 MHz ― 30 ― pF
Collector-emitter
breakdown voltage V(BR) CEO IC = 0.1 mA 300 ― ― V
Emitter-collector
breakdown voltage V(BR) ECO IE = 0.1 mA 0.3 ― ― V
VCE = 200 V ― 10 200 nA
Collector dark current ICEO
VCE = 200 V, Ta = 85°C ― ― 20 µA
Detector
Capacitance collector to
emitter CCE V = 0, f = 1 MHz ― 12 ― pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition MIn. Typ. Max. Unit
Current transfer ratio IC / IF IF = 1mA, VCE = 1 V 1000 4000 ― %
Saturated CTR IC / IF (sat) IF = 10 mA, VCE = 1 V 500 ― ― %
IC = 10 mA, IF = 1 mA ― ― 1.0
Collector-emitter
saturation voltage VCE (sat) IC = 100 mA, IF = 10 mA 0.3 ― 1.2
V
Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Capacitance
(input to output) CS VS = 0, f = 1 MHz ― 0.8 ― pF
Isolation resistance RS VS = 500 V, R.H.≤ 60% 5×1010 1014 ― Ω
AC, 1 minute 2500 ― ―
AC, 1 second, in oil ― 5000 ―
Vrms
Isolation voltage BVS
DC, 1 minute, in oil ― 5000 ― V
dc
TLP127
2002-09-25
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Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Rise time tr ― 40 ―
Fall time tf ― 15 ―
Turn-on time ton ― 50 ―
Turn-off time toff
VCC = 10 V, IC = 10 mA
RL = 100 Ω
― 15 ―
µs
Turn-on time tON ― 5 ―
Storage time ts ― 40 ―
Turn-off time tOFF
RL = 180 Ω (Fig.1)
VCC = 10 V, IF = 16 mA
― 80 ―
µs
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VCC ― ― 200 V
Forward current IF ― 16 25 mA
Collector current IC ― ― 120 mA
Operating temperature Topr -25 ― 85 °C
Fig. 1 Switching time test circuit
IF VCC
VCE
RL VCC
VCE
IF
tON tOFF
ts
9V
1V
TLP127
2002-09-25
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IF – Ta
Ambient temperature Ta (°C)
Allowable forward current
IF
(
mA
)
0
100
-20
80
60
40
20
0 20
40 60 80 120 100
PC – Ta
Ambient temperature Ta (°C)
Allowable collector power
dissipation PC (mW)
200
0
-20
160
120
80
40
0 20 40 60 80 120 100
∆VF / ∆Ta – IF
Forward current IF (mA)
Forward voltage temperature
coefficient ∆VF / ∆Ta (mV / ° C )
-3.2
-0.4
0.1
-0.8
-2.8
-2.0
-1.6
-1.2
0.3
-2.4
1 5 50 0.5 3 10 30
IFP – DR
Duty cycle ratio DR
Pulse forward current IFP (mA)
3000
10
3
30
1000
300
100
50
10-3
500
10-210-1 100 3 3 3
Pulse width ≤ 100ms
Ta = 25°C
IF – VF
Forward voltage VF (V)
Forward current IF (mA)
100
0.1
0.6
50
5
1
0.5
0.8 1.0 1.2 1.4 1.6 1.8
30
10
3
0.3
Ta = 25°C
I
FP – VFP
Pulse forward voltage VFP (V)
Pulse forward current IFP (mA)
1000
1.0 1.4 1.8 2.2 2.6 3.0
1
0.6
500
300
100
50
30
10
5
3
Pulse width ≤ 10ms
Repetitive
Frequency = 100Hz
Ta = 2 5° C
TLP127
2002-09-25
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Collector–emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
0
160
0.4
120
80
40
0.8 1.2
1.6 2.0
1mA
2mA
4mA
10mA
Ta = 25°C
IF = 0.5mA
Load resistance RL (kW)
Switching Time – RL
Switching time (ms)
1000
1
50
10
500
100
30
300
300
3k 10k 1k 5k
3
5
100
50
500
tOFF(IF = 16mA)
tOFF(IF = 1.6mA)
tON(IF = 1.6mA)
tON(IF = 16mA)
Ta = 2 5 °C
VCC = 10V
IC – IF
Forward current IF (mA)
Collector current IC (mA)
300
1
0.5
100
10
1 3 10 30 100
30
50
3
5
5 50
Sample A
Sample B
Ta = 2 5 °C
V
CE = 1.2V
V
CE = 1V
IC / IF – IF
Forward current IF (mA)
Current transfer ratio IC / IF (%)
10000
100
0.3 0.5 3
5 10 30 50
5000
1000
500
300
1
3000
Ta = 25°C
V
CE = 1.2V
V
CE = 1V
Sample B
Sample A
TLP127
2002-09-25
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ICEO – Ta
Ambient temperature Ta (℃)
Collector dark current ICEO (mA)
101
10
-4
0 20 40 60 100 80
10
-1
100
10
-2
10
-3
VCE = 200V
150V
80V
IC – Ta
Ambient temperature Ta (℃)
Collector current IC (mA)
120
0
-20
80
0 20 40 60 80 100
100
60
40
20
-40
IF = 10mA
1mA
VCE = 1V
V
CE(sat) – Ta
Ambient temperature Ta (℃)
Collector-emitter saturation
voltage VCE(sat) (V)
1.2
0
0.4
1.0
0.8
0.6
0.2
-20 0 20 40 60 80 100 -40
IF = 1mA
IC = 10mA
TLP127
2002-09-25
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· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
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responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EBC
RESTRICTIONS O N PRODUCT USE
