DISCRETE SEMICONDUCTORS DAWA SlAlleler BZV49 series Voltage regulator diodes Product specification Supersedes data of 1996 Oct 28 Philips Semiconductors VT 1999 May 11 PHILIPSPhilips Semiconductors Product specification meee ee ee ee Voltage regulator diodes BZV49 series meee ee ee ee FEATURES PINNING Total power dissipation: max. 1 W PIN DESCRIPTION e Tolerance series: approx. +5% { anode e Working voltage range: 2 anode nom. 2.4 to 75 V (E24 range) 3 cathode Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS e General regulation functions. DESCRIPTION 1 2 Medium-power voltage regulator diodes in a SOT89 plastic SMD package. 3 The diodes are available in the { 3 2 normalized E24 approx. +5% tolerance range. The series consists Bottom view MAM244 of 37 types with nominal working voltages from 2.4 to 75 V (BZV49-C2V4 to BZV49-C75). Fig.1 Simplified outline (SOT89) and symbol. MARKING TYPE MARKING TYPE MARKING TYPE MARKING TYPE MARKING NUMBER CODE NUMBER CODE NUMBER CODE NUMBER CODE BZV49-C2V4 2Y4 BZV49-C6V2 6Y2 BZV49-C16 16Y BZV49-C43 43Y BZV49-C2V7 2Y7 BZV49-C6V8 6Y8 BZV49-C18 18Y BZV49-C47 47Y BZV49-C3V0 3Y0 BZV49-C7V5 7Y5 BZV49-C20 20Y BZV49-C51 51Y BZV49-C3Y3 3Y3 BZV49-C8V2 8Y2 BZV49-C22 22Y BZV49-C56 56Y BZV49-C3V6 3Y6 BZV49-C9V1 9Y1 BZV49-C24 24y BZV49-C62 62Y BZV49-C3V9 3Y9 BZV49-C10 10Y BZV49-C27 27Y BZV49-C68 68Y BZV49-C4V3 4Y3 BZV49-C11 11Y BZV49-C30 30Y BZV49-C75 75Y BZV49-C4V7 4Y7 BZV49-C12 12Y BZV49-C33 33Y - - BZV49-C5V1 5Y1 BZV49-C13 13Y BZV49-C36 36Y - - BZV49-C5V6 5Y6 BZV49-C15 15Y BZV49-C39 39Y - - 1999 May 11 2Philips Semiconductors Product specification Voltage regulator diodes BZV49 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF continuous forward current - 250 mA Izsm non-repetitive peak reverse current | tp = 100 us; square wave; see Table Tj = 25 C prior to surge Per type Prot total power dissipation Tamb = 25 C; note 1 - 1 Ww Pzsm non-repetitive peak reverse power | t, = 100 us; square wave; - 40 WwW dissipation Tj = 25 C prior to surge; see Fig.2 Tstg storage temperature 65 +150 C Tj junction temperature - 150 C Note 1. Device mounted on a ceramic substrate; area = 2.5 cm?; thickness = 0.7 mm. ELECTRICAL CHARACTERISTICS Total series Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Ve forward voltage I- = 50 mA; see Fig.3 1 Vv 1999 May 11Product specification BZV49 series gh O'vt | gs00 09 g ost | vOL | ry gg GI cle | gel 0g gh 9zt | s00 OL g O9L | rk | vet Sy OL L6t | 891 8h gh Zkt | 00 GZ g Ovk | ak | vob Or OL Zt | Sh Qh oz gol | gs00 GZ g O'ek | v Lh | 26 O OL OGL | Sel GI Gz 08 LO 08 g Ol | v6 | OZ O OL kyl | vel eh Gz 08 LO gg g ool | 8 | 09 G2 OL Zak | vb Zh Gz 08 LO 8 g o6 | rz | vs 0z OL OL | POL bh oe oz Z'0 06 g os | r9 | Gr 0z 8 QOL | 76 OL oe 0'9 G0 OS} g o2 | Gg | 8E GI 9 96 g'8 LAG Ov og Z0 OS} g zo | Or | Ze GI 9 Z8 LL ZA8 Ov og | OS} g eg | Or | Ge GI 9 62 OL GAL 0'9 Ov zZ 002 g Gp | oe | at GI 9 a 9 8A9 0'9 Ov 002 g Ze |e% | v0 Ol 9 9'9 8g ZAQ 0'9 oz | 00 g get | fit | Oe- Or GI 0'9 og QA 0'9 oz zZ 00 g Zk+ | g'o- | Z'%- 09 Ov vs 87 LAS 0'9 oz 00 g Zot | pl- | g'e- 08 og og vy LAY 0'9 O'L OSr g 0 | Ge- | GE- 06 08 oF Ov EAY 0'9 O'L OSr g 0 | Ge- | GE- 06 ge Ly Le 6AE 0'9 O'L g OSr g 0 | ve- | GE- 06 ge g' ve QAE 0'9 O'L g OSr g 0 | ve- | GE- G6 ge ge Le EAE 0'9 O'L Ol OSr g 0 | ke- | gen G6 08 Ze 82 OAE 0'9 O'L 0z OSr g 0 | Oe- | GE- 00} GZ 6% GZ LN2 0'9 O'L 0g OSr g 0 | 91L- | GE- 00} OL 92 Ard DAS *XVIN (A) XVI *XVIN XVIN| GAL | NIN | = XVIN dAL | XVI | NIW Do GF = HPL nA | (wr svi 0OL = 13e ADVLIOA Ao=4aye g puke p sbl4 aes S912] Je S912] Je XXX9 (w) WSzZ SSYSASY ZHIN b= 432 | (wun) SZ] S912] Je (o) HP4 (A) ZA OvAZE INSYYND SSHSASY ye INSHYND (4d)P5 | LNSYHND (W/AW) Zs JONVLSISAY ADVLIOA Wad SALLLL3dSY-NON ASYSA3Y dvo gqgoid | sal 'dd5OO WAL TVILN3Y34410 SNIMHOM paiploads asimiayjo ssajun 9, gz =! Philips Semiconductors Voltage regulator diodes ad] 134 1999 May 11Product specification Philips Semiconductors BZV49 series Voltage regulator diodes Z0 gzg | g00 Ge Z 988 | 208 | rez ggz G6 O62 | O'OL GZ Gz'0 92 | g00 Ge Z 862 | LLL | 9's9 ore 06 oe | OVE 89 0 ver | g0'0 Ge Z 912 | pr9 | B'esg Giz 08 099 | O'es 29 0 z6e | go0 Or Z gg | og | aes 002 OL 009 | O'es 9g v0 LGe | g0'0 Or Z 22g | OLS | 99r og 09 O'vS | o'er Lg gO 6ze | so0 Or Z SIG] Lor | Or OLL og 00S | Ov lv 90 LOE | gO'0 Or Z 997 | aly | Oze OSl Sr O97 | OOF ev Z0 ele | s00 Sy Z ely | y9e | vee Oe Or Oly | OE 6e 80 2gz | s00 Sy Z ve | ovee | roe 06 ge ose | OVE ge 60 Lez | g0'0 Sy Z vee | 262 | vZ2 08 ge oge | ole ee 0! ole | s00 og Z v6e | 992 | re 08 oe o'ze | o'82 oe 0! 68t | so og Z gz | ye? | vie 08 Gz 682 | L'se le Go | 9 | so0 gg g oe | v'02 | vel OL Gz 9G | Sz ve Go | vst | g0'0 09 g 002 | v8t | r'9L gg 0g eee | 8'0c ae *XVIN (a) *XVIN *XVIN XVIN| GAL | NIN | = XVI dAL | *XVIN | NIA Do GS = WHEL A tw) sti ool = 41e FDVLIOA Ao=4ale g pue 7 sbl4 ees 18212) ye oizyye | XXXO (y) WSz| 3SY3ARuY ZHIN b= 432 | (wu) $2Z S912] ye (o) #P4 (A) 2A 6PAZa INSYYND 3SHSARY ye INSYYHND (44)9 | LNSHYND (W/AW) 25 FONVLSISAY ADVLIOA Wad SALLLLaday-NON ASYSAaY dvo gqoiqd | 1SaL 'dd5O9 AWAL WILNaY34410 SNIMYOM 1999 May 11Philips Semiconductors Product specification Voltage regulator diodes BZV49 series THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rih j-tp thermal resistance from junction to tie-point 15 KW Rih ja thermal resistance from junction to ambient note 1 125 KAW Note 1. Device mounted on a ceramic substrate; area = 2.5 cm?; thickness = 0.7 mm. GRAPHICAL DATA MBG801 PZSM (W) 102 10-1 1 duration (ms) 10 (1) Tj =25 C (prior to surge). (2) Tj = 150 C (prior to surge). Fig.2 Maximum permissible non-repetitive peak reverse power dissipation versus duration. MBG781 T= 25C. Fig.3 Forward current as a function of forward voltage; typical values. 1999 May 11Philips Semiconductors Product specification Voltage regulator diodes BZV49 series MBG927 -2 -3 1 03 1 0-2 1 0-1 1 I ( \) BZV49-C2V4 to CAV3. T, = 25 to 150C. Fig.4 Temperature coefficient as a function of working current; typical values. MBG924 10 (mV/K) 5 Iz (mA) BZV49-C4V7 to C10. T, = 25 to 150C. Fig.5 Temperature coefficient as a function of working current; typical values. 1999 May 11 7Philips Semiconductors Product specification Voltage regulator diodes BZV49 series PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 D ->{[5] | A * b3 > / \ L E C | | 4 L 1 2 3 { 1 ! _ | _ I el co by ~~ [e] 0 2 4mm Leper teri teri tei | scale DIMENSIONS (mm are the original dimensions) UNIT A by bo bg c D E e ey He win. w 16 | 048 | 053 | 18 | 044] 46 ] 26 4.25 mm | 44 | 035 | 040 | 14 | 037] 44 | 24 | 3 | TS | 375] O8 | O18 OUTLINE REFERENCES EUROPEAN VERSION IEC JEDEC EIAJ PROJECTION ISSUE DATE soTs9 -} 97-02-28 1999 May 11 8Philips Semiconductors Product specification Voltage regulator diodes BZV49 series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, itis advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 May 11 9Philips Semiconductors Product specification Voltage regulator diodes BZV49 series NOTES 1999 May 11 10Philips Semiconductors Product specification Voltage regulator diodes BZV49 series NOTES 1999 May 11 11Philips Semiconductors Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160101 1248, Fax. +43 160101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-O2630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: HammerbrookstraBe 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 lreland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 02 67 52 2531, Fax. +39 02 67 52 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 ltaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see ltaly For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Philips Electronics N.V. 1999 a worldwide company Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: UI. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777 Internet: http:/Awww.semiconductors. philips.com SCA 64 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/03/pp12 Philips Semiconductors Date of release: 1999 May 11 Document order number: 9397 750 05927 pet PHILIPS Lede