IXFN24N100 HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 20 V VGSM Transient 30 V ID25 IDM TC = 25C TC = 25C, pulse width limited by TJM 24 96 A A IA TC = 25C 24 A EAS TC = 25C 3 J dV/dt IS IDM, VDD VDSS, TJ 150C 5 V/ns PD TC = 25C 568 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TL 1.6mm (0.062 in.) from case for 10s VISOL 50/60 Hz, RMS IISOL 1mA Md Mounting torque Terminal connection torque t = 1min t = 1s Weight Symbol Test Conditions (TJ = 25C, unless otherwise specified) VGS = 0V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 12A, Note 1 V 5.5 V 200 nA 100 2 A mA 390 m TJ = 125C S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features * International standard package * Encapsulating epoxy meets UL 94 V-0, flammability classification * miniBLOC with Aluminium nitride isolation * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Avalanche rated * Low package inductance * Fast intrinsic Rectifier Applications * * * * Characteristic Values Min. Typ. Max. BVDSS 1000V 24A 390m 250ns miniBLOC, SOT-227 B E153432 Symbol TJ = = DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls * Low voltage relays Advantages * Easy to mount * Space savings * High power density DS98597H(10/08) (c) 2008 IXYS CORPORATION, All rights reserved http://store.iiic.cc/ IXFN24N100 Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 15 VDS = 10V, ID = 12A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 12A RG = 1 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 12A Qgd 27 S 8700 pF 785 pF 315 pF 35 ns 35 ns 75 ns 21 ns 267 nC 52 nC 142 nC RthJC 0.22 RthCS C/W C/W 0.05 Source-Drain Diode SOT-227B Outline Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V 24 A ISM Repetitive, pulse width limited by TJM 96 A VSD IF = 24A, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 24A, -di/dt = 100A/s 250 ns C A 1.0 8.0 VR = 100V Note 1: Pulse test, t 300s; duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 http://store.iiic.cc/ 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN24N100 Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 24 55 VGS = 10V 7V VGS = 10V 50 20 45 ID - Amperes ID - Amperes 40 16 6V 12 8 7V 35 30 25 20 6V 15 10 4 5V 5 0 5V 0 0 1 2 3 4 5 6 7 8 9 0 3 6 9 15 18 21 24 27 30 Fig. 4. RDS(on) Normalized to ID = 12A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125C 24 2.8 VGS = 10V 2.6 20 VGS = 10V 2.4 RDS(on) - Normalized 6V ID - Amperes 12 VDS - Volts VDS - Volts 16 12 8 2.2 2.0 I D = 24A 1.8 I D = 12A 1.6 1.4 1.2 1.0 5V 4 0.8 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 12A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 28 2.6 VGS = 10V 2.4 24 TJ = 125C 2.2 20 2.0 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 1.8 1.6 16 12 1.4 8 1.2 TJ = 25C 1.0 4 0.8 0 0 5 10 15 20 25 30 35 40 45 50 55 -50 -25 0 25 50 75 TC - Degrees Centigrade ID - Amperes (c) 2008 IXYS CORPORATION, All rights reserved http://store.iiic.cc/ 100 125 150 IXFN24N100 Fig. 8. Transconductance Fig. 7. Input Admittance 60 45 TJ = - 40C 40 50 TJ = 125C 25C - 40C 30 25 g f s - Siemens ID - Amperes 35 20 15 25C 40 125C 30 20 10 10 5 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 5 10 15 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 25 30 35 40 45 50 210 240 270 Fig. 10. Gate Charge 10 70 9 VDS = 500V 8 I G = 10mA 60 I D = 12A 50 7 VGS - Volts IS - Amperes 20 ID - Amperes 40 TJ = 125C 30 TJ = 25C 20 6 5 4 3 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 30 60 VSD - Volts 90 120 150 180 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 Capacitance - PicoFarads f = 1MHz Ciss Z(th)JC - C / W 10,000 0.100 Coss 1,000 Crss 100 0 5 10 15 20 25 30 35 40 0.010 0.001 0.01 0.1 1 10 Pulse Width - Seconds VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_24N100(9X)10-17-08-C http://store.iiic.cc/