© 2008 IXYS CORPORATION, All rights reserved DS98597H(10/08)
HiPerFETTM Power
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN24N100
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 1000 V
VGS(th) VDS = VGS, ID = 8mA 3.0 5.5 V
IGSS VGS = ±20V, VDS = 0V ±200 nA
IDSS VDS = VDSS 100 μA
VGS = 0V TJ = 125°C 2 mA
RDS(on) VGS = 10V, ID = 12A, Note 1 390 mΩ
VDSS = 1000V
ID25 = 24A
RDS(on) ≤≤
≤≤
≤ 390mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 250ns
S
G
S
D
miniBLOC, SOT-227 B
E153432
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1000 V
VGSS Continuous ±20 V
VGSM Transient ± 30 V
ID25 TC= 25°C24A
IDM TC= 25°C, pulse width limited by TJM 96 A
IATC= 25°C24A
EAS TC= 25°C3J
dV/dt IS≤ IDM, VDD ≤ VDSS,T
J ≤ 150°C 5 V/ns
PDTC= 25°C 568 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from case for 10s 300 °C
VISOL 50/60 Hz, RMS t = 1min 2500 V~
IISOL ≤ 1mA t = 1s 3000 V~
MdMounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.3/11.5 Nm/lb.in.
Weight 30 g
Features
•International standard package
•Encapsulating epoxy meets
UL 94 V-0, flammability classification
•miniBLOC with Aluminium nitride
isolation
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Avalanche rated
•Low package inductance
•Fast intrinsic Rectifier
Applications
•DC-DC converters
•Synchronous rectification
•Battery chargers
•Switched-mode and resonant-mode
power supplies
•DC choppers
•Temperature and lighting controls
•Low voltage relays
Advantages
•Easy to mount
•Space savings
•High power density
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN24N100
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs VDS = 10V, ID = 12A, Note 1 15 27 S
Ciss 8700 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 785 pF
Crss 315 pF
td(on) 35 ns
tr 35 ns
td(off) 75 ns
tf 21 ns
Qg(on) 267 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 12A 52 nC
Qgd 142 nC
RthJC 0.22 °C/W
RthCS 0.05 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0V 24 A
ISM Repetitive, pulse width limited by TJM 96 A
VSD IF = 24A, VGS = 0V, Note 1 1.5 V
trr 250 ns
QRM 1.0 μC
IRM 8.0 A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 12A
RG = 1Ω (External)
IF = 24A, -di/dt = 100A/μs
VR = 100V
SOT-227B Outline
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© 2008 IXYS CORPORATION, All rights reserved
IXFN24N100
Fig. 1. Outp u t C h ar acteri stics
@ 25ºC
0
4
8
12
16
20
24
0123456789
V
DS
- Volts
I
D
- A mpe res
V
GS
= 10V
7V
6V
5V
Fig. 2. Extended Output Characteristics
@ 25º C
0
5
10
15
20
25
30
35
40
45
50
55
0 3 6 9 12 15 18 21 24 27 30
V
DS
- V olt s
I
D
- A mpe re s
V
GS
= 10V
5V
6V
7V
Fi g . 3. Ou tp u t C h ar acter isti cs
@ 125ºC
0
4
8
12
16
20
24
0 2 4 6 8 101214161820
V
DS
- Volts
I
D
- Am peres
V
GS
= 10V
5V
6V
Fig. 4. RDS(on) Normalized to ID = 12A Value
vs. Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- N orm a lize d
V
GS
= 10V
I
D
= 24A
I
D
= 12A
Fig. 5. RDS(on) Normalized to ID = 12A Value
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0 5 10 15 20 25 30 35 40 45 50 55
I
D
- Amp eres
R
DS(on)
- N o rm a liz ed
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperatur e
0
4
8
12
16
20
24
28
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- A mp er es
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN24N100
IXYS REF: F_24N100(9X)10-17-08-C
Fig. 7. Input Admittance
0
5
10
15
20
25
30
35
40
45
3.54.04.55.05.56.06.57.0
V
GS
- V olts
I
D
- A mpe re s
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
0 5 10 15 20 25 30 35 40 45 50
I
D
- A mp ere s
g
f s
- S ieme ns
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
In t r i n si c D i o d e
0
10
20
30
40
50
60
70
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Vo lts
I
S
- A mpe re s
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 30 60 90 120 150 180 210 240 270
Q
G
- NanoCoulombs
V
GS
- V o lt s
V
DS
= 500V
I
D
= 12A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Vo lts
Capacitance - PicoFarads
f
= 1MHz
Ciss
Crss
Coss
Fi g . 12. Maxi mu m Tran sien t Th ermal
Impedance
0.010
0.100
1.000
0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
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