FPF2488UCX - FAIRCHILD SEMICONDUCTOR

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February 2015

FPF2488 • Rev. 1.6

FPF2488 — Dual Channel Over-Voltage Protection Load Switch

FPF2488

Dual Channel Over-Voltage Protection Load Switch

Features

 Dual Channel Power Switch (VBUS and VIF)

 Surge Protection under IEC 61000-4-5

- VBUS: ±100 V

- VIF: ± 40 V

 Input Voltage Range

- VBUS: 2.5 V ~ 23 V

- VIF: 3.1 V ~ 5.5 V

 Max Continuous Current Capability

- VBUS: 2.5 A

- VIF: 6 A

 Ultra Low On-Resistance

- VBUS: Typ. 33 mΩ

- VIF: Typ. 10 mΩ

 Over Voltage Protection

- VBUS: 10 V ± 100 mV

- VIF: 5.25 V ± 250 mV

 LDO Output based VBUS_DET for VBUS Detection

 Active Low Control for VBUS Path

 OTG Functionality on VBUS Path

 Conditional Active High Control for VIF Path

 Reverse-Current Blocking for VIF Path

Applications

 Mobile Handsets and Tablets

 Wearable Devices

Description

The FPF2488 features a 2-channel power switch, which

offers surge protection and Over-Voltage Protection

(OVP), to protect downstream components and

enhancing overall system robustness.

Channel one (VBUS) is an active-low, 28 V/2.5 A rated,

power MOSFET switch with an internal clamp

supporting ±100 V surge protection, highly accurate

fixed OVP at 10.0 V (±100 mV), and OTG functionality.

Channel two (VIF) is a conditional active-high, 6 V/6 A

rated, power MOSFET switch with an integrated TVS

supporting ± 40 V surge protection and fixed OVP at

5.25 V (± 250 mV). VIF also provides Reverse Current

Blocking (RCB) during its OFF state to minimize

leakage current.

VBUS_DET is paired with always ON LDO to power

downstream devices even with VBUS is greater than

2.5 V, even when disabled through the ONB pin. This

provides power sequence control or a host controlled

configuration in system.

The FPF2488 is available in a 15-bump, 1.6 mm x

2.2 mm Wafer-Level Chip-Scale Package (WLCSP) with

0.4 mm pitch.

Related Resources

 http://www.fairchildsemi.com/

Ordering Information

Part Number

Operating Temperature

Range

Top Mark

Package

Packing

Method

FPF2488UCX

-40°C – +85°C

GW

15-Ball, 0.4 mm Pitch WLCSP

Tape & Reel

FPF2488 • Rev. 1.6 2

FPF2488 — Dual Channel Over-Voltage Protection Load Switch

Application Diagram

FPF2488

VBUS VOUT

Travel

Adapter

ON

ONB

PMIC

BAT

BATTERY

Battery

Charger System

Test JIG VIF

GND

VBUS_DET

Figure 1. Typical Application

Block Diagram

THERMAL

SHUTDOWN

CONTROL

LOGIC

w/ Charge

pump ON

GND

ONB

RCB

OVLO

UVLO

OVLO

BAT

VOUT

VBUS

VIF

TVS

FPF2488

VBUS_DET

LDO

VBUS

Figure 2. Functional Block Diagram

FPF2488 • Rev. 1.6 3

FPF2488 — Dual Channel Over-Voltage Protection Load Switch

Pin Configuration

VOUT VOUT

BAT

ONB

BAT

VBUS

VIF

GND VBUS_

DET

GND

VIF

BAT VIF

ON

A

B

C

D

E

1 2 3

VBUS

VBUS_

DET

VIF

ON

ONB VOUT

VOUT

BAT

VBUS

VIF

GND

BAT

A

B

C

D

E

3 2 1

Figure 3. Pin Configuration (Top View)

Figure 4. Pin Configuration (Bottom View)

Pin Definitions

Name

Bump

Type

Description

VBUS

B2, B3

Input/Supply

Switch Input and Device Supply

VOUT

A1, A2

Output

Switch Output to Load

VIF

D2, D3, E3

Input/Supply

Switch Input and Device Supply

BAT

D1, E1, E2

Output

Switch Output to Battery

VBUS_DET

C3

Output

Regulated Output according to VBUS

ON

B1

Input

Active HIGH: VIF path only and when BAT is valid prior to VIF

ONB

A3

Input

Active LOW: VBUS path only

GND

C1, C2

GND

Ground

FPF2488 • Rev. 1.6 4

FPF2488 — Dual Channel Over-Voltage Protection Load Switch

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Symbol

Parameter

Min.

Max.

Unit

VBUS

VBUS to GND & VBUS to VOUT=GND or Float

-0.3

29.0

V

VIF

VIF to GND

-2(1)

6

V

VOUT

VOUT to GND

-0.3

VIN + 0.3

V

BAT

BAT to GND

-0.3

VIF + 0.3

V

VBUS_DET

VBUS_DET to GND

8

V

VON(B)

ONB or ON to GND

6

V

IIN_VBUS

Continuous VBUS Current

2.5

A

Peak VBUS Current (5 ms)

5

A

IIN_VIF

Continuous VIF Current

6

A

Peak VIF Current (5 ms)

12

A

IIN_VBUS_DET

Continuous VBUS_DET Current

1

mA

tPD

Total Power Dissipation at TA=25°C

1.54

W

TSTG

Storage Temperature Range

-65

+150

°C

TJ

Maximum Junction Temperature

+150

C

TL

Lead Temperature (Soldering, 10 Seconds)

+260

C

JA

Thermal Resistance, Junction-to-Ambient(2) (1-in.2 Pad of 2-oz. Copper)

81(2)

°C/W

ESD

Electrostatic Discharge

Capability

IEC 61000-4-2 System

Level ESD

Air Discharge

15.0

kV

Contact Discharge

8.0

Human Body Model,

ANSI/ESDA/JEDEC JS-

001-2012

All Pins

2

Charged Device Model,

JESD22-C101

All Pins

1

Surge

IEC 61000-4-5,

Surge Protection

VBUS

±100

V

VIF

±40

Notes:

1. Pulsed, 50 ms maximum non-repetitive.

2. Measured using 2S2P JEDEC std. PCB.

Recommended Operating Conditions

The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended

operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not

recommend exceeding them or designing to Absolute Maximum Ratings.

Symbol

Parameter

Min.

Max.

Unit

VBUS

Supply Voltage, VBUS

2.5

23.0

V

VIF

Supply Voltage, VIF

3.1

5.5

V

CIN / COUT

Input and Output Capacitance

0.1

μF

CVBUS_DET

Output Capacitance

0.47

μF

TA

Operating Temperature

-40

+85

°C

FPF2488 • Rev. 1.6 5

FPF2488 — Dual Channel Over-Voltage Protection Load Switch

Electrical Characteristics

Unless otherwise noted, VBUS=2.5 to 23 V, VIF=3.1 to 5.5 V, TA=-40 to 85°C; Typical values are at VBUS=5 V, IIN ≤ 2 A,

VIF=4 V, CIN=0.1 μF and TA=25°C.

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

Basic Operation

IQ

Input Quiescent Current

VBUS=5 V, ONB=0 V, VBUS_DET=Floating

160

250

μA

VIF=4 V

100

150

μA

IIN_Q

OVLO Supply Current

VBUS=12 V, VOUT=0 V, VBUS_DET=Floating

150

205

μA

VIF=5.5 V, BAT=0 V

100

180

μA

TSDN

Thermal Shutdown(3)

140

°C

TSDN_HYS

Thermal Shutdown

Hysteresis(3)

20

°C

VBUS to VOUT Switch

VBUS_CLAMP

Input Clamping Voltage

IIN=10 mA

35

V

VBUS_OVLO

Over-Voltage Trip Level

VBUS Rising, TA=-40 to 85°C

9.9

10.0

10.1

V

VBUS Falling, TA=-40 to 85°C

9.8

V

RON_VBUS

On-Resistance

VBUS=5 V, IOUT=1 A, TA=25°C

33

39

mΩ

VBUS=9 V, IOUT=1 A, TA=25°C

33

39

mΩ

tDEB_VBUS

Debounce Time

Time from VBUS_MIN < VBUS < VBUS_OVLO to

VOUT=0.1 × VBUS

15

ms

tSTART_VBUS

Soft-Start Time

Time from VBUS=VBUS_MIN to 0.1 × VBUS_DET

30

ms

tON_VBUS

Switch Turn-On Time

RL=100 Ω, CL=22 µF, VOUT from 0.1 × VBUS

to 0.9 × VBUS

3

ms

tOFF_VBUS

Switch Turn-Off Time

RL=100 Ω, No CL, VBUS > VBUS_OVLO to

VOUT=0.8 × VBUS

150

ns

VIF to BAT Switch

VIF_CLAMP

Input Clamping Voltage

IIN=10 mA

6.4

V

VIF_UVLO

Under-Voltage Trip Level

VIF Rising, TA=-40 to 85°C

2.85

3.05

V

VIF Falling, TA=-40 to 85°C

2.7

V

VIF_OVLO

Over-Voltage Trip Level

VIF Rising, TA=-40 to 85°C

5.00

5.25

5.50

V

VIF Falling, TA=-40 to 85°C

4.8

V

RON_VIF

On-Resistance

VIF=3.1 V, IOUT=1 A, TA=25°C

10

15

mΩ

IRCB

Reverse Current

VIF=0 V, BAT=4.4 V

3

7

μA

tDEB_VIF

Debounce Time

Time from VIF_UVLO < VIF < VIF_OVLO to

BAT=0.1 × VIF

15

ms

tQUAL_VIF

Qualification Time

BAT > VIH_BAT First, Time from ON >

VIH_ON(B) to BAT Voltage Increase

30

ms

tON_VIF

Switch Turn-On Time

RL=100 Ω, CL=22 µF, VOUT from 0.1 × VIF to

0.9 × VIF

3

ms

tOFF_VIF

Switch Turn-Off Time

RL=100 Ω, No CL,VIN > VOVLO to VOUT=0.8 ×

VIF

150

ns

Note:

3. Guaranteed by characterization and design.

Continued on the following page…

FPF2488 • Rev. 1.6 6

FPF2488 — Dual Channel Over-Voltage Protection Load Switch

Electrical Characteristics

Unless otherwise noted, VBUS=2.5 to 23 V, VIF=3.1 to 5.5 V, TA=-40 to 85°C; Typical values are at VBUS=5 V, IIN ≤ 2 A,

VIF=4 V, CIN=0.1 μF and TA=25°C.

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

VBUS_DET

VBUS_DET Output Voltage

VBUS=6.5 V, IBUS_DET=0 mA, TA=25°C

6.0

6.5

V

VBUS=15 V, IBUS_DET=0 mA, TA=25°C

6.0

7.0

7.9

V

VBUS=6.5 V, IBUS_DET=1 mA, TA=25°C

6.0

6.3

6.5

V

VBUS=15 V, IBUS_DET=1 mA, TA=25°C

6.0

7.0

7.9

V

Digital Signals

VIH_ON(B)

Enable HIGH Voltage

VBUS, VIF Operating Range

1.2

V

VIL_ON(B)

Enable LOW Voltage

VBUS, VIF Operating Range

0.5

V

VIH_BAT

BAT Presence HIGH Voltage

BAT Rising

2.6

V

VIL_BAT

BAT Presence Low Voltage

BAT Falling

1.7

V

IVBUS_DET_LEAK

VBUS_DET Leakage Current

VVBUS_DET=5 V, VBUS=0 V

1

µA

ONB_Leak

ONB Leakage Current

VBUS=5 V, VOUT=Float

1

µA

FPF2488 • Rev. 1.6 7

FPF2488 — Dual Channel Over-Voltage Protection Load Switch

Timing Diagrams

VBUS

VOUT

ONB

tSTART_VBUS

Measure VBUS > VBUS_MIN

to 0.1*VBUS_DET

tDEB_VBUS

tON_VBUS

Measure

@ 10/90%

tOFF_VBUS

Measure @

80% ONB to

VOUT = 0.8*VBUS

VBUS_DET

Figure 5. Timing for VBUS Power Up/Down and Normal Operation

VBUS

VOUT

VBUS_DET

tSTART_VBUS

tOFF_VBUS

Measure @

OVLO_Rising to

VOUT = 0.8*VIN

VOVLO tSTART_VBUS

Figure 6. Timing for VBUS OVLO Operation (ONB=LOW)

VBUS

VBUS_DET

VBUS < OVLO

VBUS > OVLO

OVLO

VBUS_Min

tSTART_VBUS

Measure VBUS_Min to

0.1*VBUS_DET

Figure 7. Always ON VBUS_DET Operation (ONB=HIGH)

FPF2488 • Rev. 1.6 8

FPF2488 — Dual Channel Over-Voltage Protection Load Switch

Timing Diagrams (Continued)

VIF

BAT

tDEB_VIF

tON_VIF

Measure

@ 10/90%

tOFF_VIF

Measure @

UVLO_Falling to

VOUT = 0.8*VIF

Figure 8. Timing for VIF Power Up/Down and Normal Operation (ON=Don’t Care)

VIF (>BAT)

BAT (> VIH_BAT)

ON

tQUAL_VIF

Figure 9. Timing for VIF Power Up/Down and Normal Operation with ON Pin

VIF

BAT

tOFF_VIF

Measure @

OVLO_Rising

BAT = 0.8*VIF

VOVLO

tDEB_VIF

Figure 10. Timing for VIF OVLO Operation (ON=Don’t Care)

FPF2488 • Rev. 1.6 9

FPF2488 — Dual Channel Over-Voltage Protection Load Switch

VIF Turn-On Qualification State Diagram

Figure 11. VIF Turn-On Qualification State Diagram

Notes:

4. Case #1 is reflecting removable battery system without ON signal.

5. Case #2 is reflecting embedded battery system with ON signal.

Product-Specific Dimensions

D

E

X

Y

2200 μm ±30 μm

1600 μm ±30 μm

400 μm ±18 μm

300 μm ±18 μm

www.onsemi.com

1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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