1
®
FN6320.3
ISL8840A, ISL8841A, ISL8842A,
ISL8843A, ISL8844A, ISL8845A
High Performance Industry S tandard
Single-Ended Current Mode PWM
Controller
The ISL884xA is a high performance drop-in replacement for
the popular 28C4x and 18C4x PWM controllers suitable for a
wide range of power conversion applications including
boost, flyback, and isolated output configurations. Its fast
signal propagation and output switching characteristics
make this an ideal product for existing and new designs.
Features include 30V operation, low operating current, 90μA
start-up current, adjustable operating frequency to 2MHz,
and high peak current drive capability with 20ns rise and fall
times.
Pinout
ISL8840A, ISL8841A, ISL8842A, ISL8843A, ISL8844A, ISL8845A
(8 LD SOIC, MSOP)
TOP VIEW
Features
1A MOSFET gate driver
•90μA start-up current, 125μA maximum
35ns propagation delay current sense to output
Fast transient response with peak current mode control
30V operation
Adjustable switching frequency to 2MHz
20ns rise and fall times with 1nF output load
Trimmed timing capacitor discharge current for accurate
deadtime/maximum duty cycle control
1.5MHz bandwidth error amplifier
Tight tolerance voltage reference over line, load and
temperature
±3% current limit threshold
Pb-free plus anneal available and ELV, WEEE, RoHS
Compliant
Applications
Telecom and datacom power
Wireless base station power
File server power
Industrial power systems
PC power supplies
Isolated buck and flyback regulators
Boost regulators
PART NUMBER RISING UVLO MAX. DUTY CYCLE
ISL8840A 7.0 100%
ISL8841A 7.0 50%
ISL8842A 14.4V 100%
ISL8843A 8.4V 100%
ISL8844A 14.4V 50%
ISL8845A 8.4V 50%
COMP
FB
RTCT
VREF
VDD
OUT
GND
1
2
3
4
8
CS
7
6
5
Data Sheet April 18, 2007
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 |Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2005, 2006, 2007. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
2FN6320.3
April 18, 2007
Ordering Information
PART
NUMBER* PART
MARKING TEMP.
RANGE (°C) PACKAGE
(Pb-free) PKG.
DWG. #
ISL8840AABZ
(See Note) 8840 AABZ -40 to +105 8 Ld SOIC M8.15
ISL8840AAUZ
(See Note) 40AAZ -40 to +105 8 Ld MSOP M8.118
ISL8840AMBZ
(See Note) 8840 AMBZ -55 to +125 8 Ld SOIC M8.15
ISL8840AMUZ
(See Note) 40AMZ -55 to +125 8 Ld MSOP M8.118
ISL8841AABZ
(See Note) 8841 AABZ -40 to +105 8 Ld SOIC M8.15
ISL8841AAUZ
(See Note) 41AAZ -40 to +105 8 Ld MSOP M8.118
ISL8841AMBZ
(See Note) 8841 AMBZ -55 to +125 8 Ld SOIC M8.15
ISL8841AMUZ
(See Note) 41AMZ -55 to +125 8 Ld MSOP M8.118
ISL8842AABZ
(See Note) 8842 AABZ -40 to +105 8 Ld SOIC M8.15
ISL8842AAUZ
(See Note) 42AAZ -40 to +105 8 Ld MSOP M8.118
ISL8842AMBZ
(See Note) 8842 AMBZ -55 to +125 8 Ld SOIC M8.15
ISL8842AMUZ
(See Note) 42AMZ -55 to +125 8 Ld MSOP M8.118
ISL8843AABZ
(See Note) 8843 AABZ -40 to +105 8 Ld SOIC M8.15
ISL8843AAUZ
(See Note) 43AAZ -40 to +105 8 Ld MSOP M8.118
ISL8843AMBZ
(See Note) 8843 AMBZ -55 to +125 8 Ld SOIC M8.15
ISL8843AMUZ
(See Note) 43AMZ -55 to +125 8 Ld MSOP M8.118
ISL8844AABZ
(See Note) 8844 AABZ -40 to +105 8 Ld SOIC M8.15
ISL8844AAUZ
(See Note) 44AAZ -40 to +105 8 Ld MSOP M8.118
ISL8844AMBZ
(See Note) 8844 AMBZ -55 to +125 8 Ld SOIC M8.15
ISL8844AMUZ
(See Note) 44AMZ -55 to +125 8 Ld MSOP M8.118
ISL8845AABZ
(See Note) 8845 AABZ -40 to +105 8 Ld SOIC M8.15
ISL8845AAUZ
(See Note) 45AAZ -40 to +105 8 Ld MSOP M8.118
ISL8845AMBZ
(See Note) 8845 AMBZ -55 to +125 8 Ld SOIC M8.15
ISL8845AMUZ
(See Note) 45AMZ -55 to +125 8 Ld MSOP M8.118
*Add “-T” suffix for tape and reel.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
Ordering Information (Continued)
PART
NUMBER* PART
MARKING TEMP.
RANGE (°C) PACKAGE
(Pb-free) PKG.
DWG. #
ISL8840A, ISL8841A, ISL8842A, ISL8843A, ISL8844A, ISL8845A
3FN6320.3
April 18, 2007
Functional Block Diagram
TQ
Q
ON
150k
100k
VDD
CS
OUT
FB
RTCT
GND
VREF
PWM
COMPARATOR
RESET
DOMINANT
2.5V
ENABLE
8.4mA
2.9V
1.0V
OSCILLATOR
COMPARATOR
<10ns
+
-
START/STOP
UV COMPARATOR
VREF
5.00V
+
-
+
-
100mV
ERROR
AMPLIFIER
+
-
VREF
+
-
ON
+
-
S
R
Q
Q
COMP
VREF
UV COMPARATOR
4.65V 4.80V
+
-
A = 0.5
+
-
CLOCK
1.1V
CLAMP
2R
R
VF TOTAL = 1.15V
A
VREF FAULT
OKVDD
36k
ISL8841A/
ONLY
ISL8844A/
ISL8845A
ISL8840A, ISL8841A, ISL8842A, ISL8843A, ISL8844A, ISL8845A
4FN6320.3
April 18, 2007
Typical Application - 48V Input Dual Output Flyback
VIN+
VIN-
RETURN
T1
Q3
36V TO 75V
VR1
+1.8V
+3.3V
C1
C2
C3
R1
R3 C4
Q1
R4
CR6
C5
R22
U2
CR2
CR5
CR4
C17
R21
U3
R16
C14
C13 R15
R19
R17 R18
R20
C15 C16
C12
C11
R13
C8
R10
R6
CR1
++
C21
C19
C22
C20
++
C6
ISL884xA
VDD
RTCT
CS
FB OUT
COMP VREF
GND
R26
R27
U4
ISL8840A, ISL8841A, ISL8842A, ISL8843A, ISL8844A, ISL8845A
5FN6320.3
April 18, 2007
Typical Application - Boost Converter
VIN+
VIN-
C1
Q1
R1
R4
CR1
C9
R7
C2
C5
C6
C7
R3
+
R2
C4
L1
C3
VIN+
U1
ISL884xA
OUT
CS
RTCT
FB
COMP VREF
VDD
GND
+VOUT
R6
R5
RETURN
C10
C8
R8
ISL8840A, ISL8841A, ISL8842A, ISL8843A, ISL8844A, ISL8845A
6FN6320.3
April 18, 2007
Absolute Maximum Ratings Thermal Information
Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . GND -0.3V to +30V
OUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V to VDD + 0.3V
Signal Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . .GND -0.3V to 6.0V
Peak GATE Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1A
ESD Classification
Human Body Model (Per JESD22-A114 C.01) . . . . . . . . . . .2000V
Machine Model (Per EIA/JESD22-A115-A) . . . . . . . . . . . . . .200V
Charged Device Model (Per JESD22-C191-A) . . . . . . . . . .1000V
Operating Conditions
Temperature Range
ISL884xAAxZ . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to +105°C
ISL884xAMxZ. . . . . . . . . . . . . . . . . . . . . . . . . . . .-55°C to +125°C
Supply Voltage Range (Typical, Note 2)
ISL884xA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V to 30V
Thermal Resistance (Typical, Note 1) θJA (°C/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
MSOP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
Maximum Junction Temperature . . . . . . . . . . . . . . .-55°C to +150°C
Maximum Storage Temperature Range. . . . . . . . . .-65°C to +150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . .+300°C
(SOIC, MSOP - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the ope rational sections of this specification is not implied.
+150°C max junction tempera ture is intended for short periods of time to prevent shortening the lifetime. Constantly operated at +150°C may shorten the life of the part.
NOTES:
1. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air . See Technical Brief TB379 for details.
2. All voltages are with respect to GND.
Electrical Specifications ISL884xAA - Recommended operating conditions unless otherwise noted. Refer to Block Diagram and
Typical Application schematic onpage 3 and page 4. VDD = 15V, RT = 10kΩ, CT = 3.3nF, TA = -40 to +105°C
(Note 3). Typical values are at TA= +25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
UNDERVOLTAGE LOCKOUT
START Threshold (ISL8840A, ISL8841A) 6.5 7.0 7.5 V
START Threshold (ISL8843A, ISL8845A) 8.0 8.4 9.0 V
START Threshold (ISL8842A, ISL8844A) (Note 6) 13.3 14.3 15.3 V
STOP Threshold (ISL8840A, ISL8841A) 6.1 6.6 6.9 V
STOP Threshold (ISL8843A, ISL8845A) 7.3 7.6 8.0 V
STOP Threshold (ISL8842A, ISL8844A) 8.0 8.8 9.6 V
Hysteresis (ISL8840A, ISL8841A) - 0.4 - V
Hysteresis (ISL8843A, ISL8845A) - 0.8 - V
Hysteresis (ISL8842A, ISL8844A) - 5.4 - V
Startup Current, IDD VDD < START Threshold - 90 125 μA
Operating Current, IDD (Note 4) - 2.9 4.0 mA
Operating Supply Current, IDIncludes 1nF GATE loading - 4.75 5.5 mA
REFERENCE VOLTAGE
Overall Accuracy Over line (VDD = 12V to 30V), load,
temperature 4.925 5.000 5.050 V
Long Term Stability TA = +125°C, 1000 hours (Note 5) - 5 - mV
Current Limit, Sourcing -20 - - mA
Current Limit, Sinking 5--mA
CURRENT SENSE
Input Bias Current VCS = 1V -1.0 - 1.0 μA
CS Offset Voltage VCS = 0V (Note 5) 95 100 105 mV
COMP to PWM Comparator Offset Voltage VCS = 0V (Note 5) 0.80 1.15 1.30 V
ISL8840A, ISL8841A, ISL8842A, ISL8843A, ISL8844A, ISL8845A
7FN6320.3
April 18, 2007
Input Signal, Maximum 0.97 1.00 1.03 V
Gain, ACS = ΔVCOMP/ΔVCS 0 < VCS < 910mV, VFB = 0V 2.5 3.0 3.5 V/V
CS to OUT Delay -3555ns
ERROR AMPLIFIER
Open Loop Voltage Gain (Note 5) 60 90 - dB
Unity Gain Bandwidth (Note 5) 1.0 1.5 - MHz
Reference Voltage VFB = VCOMP 2.475 2.500 2.530 V
FB Input Bias Current VFB = 0V -1.0 -0.2 1.0 μA
COMP Sink Current VCOMP = 1.5V, VFB = 2.7V 1.0 - - mA
COMP Source Current VCOMP = 1.5V, VFB = 2.3V -0.4 - - mA
COMP VOH VFB = 2.3V 4.80 - VREF V
COMP VOL VFB = 2.7V 0.4 - 1.0 V
PSRR Frequency = 120Hz, VDD = 12V to
30V (Note 5) 60 80 - dB
OSCILLATOR
Frequency Accuracy Initial, TA = +25°C 48 51 53 kHz
Frequency Variation with VDD TA= +25°C, (f30V - f10V)/f30V -0.21.0%
Temperature Stability (Note 5) - - 5 %
Amplitude, Peak to Peak Static Test - 1.75 - V
RTCT Discharge Voltage (Valley Voltage) Static Test - 1.0 - V
Discharge Current RTCT = 2.0V 6.5 7.8 8.5 mA
OUTPUT
Gate VOH VDD to OUT, IOUT = -200mA - 1.0 2.0 V
Gate VOL OUT to GND, IOUT = 200mA - 1. 0 2.0 V
Peak Output Current COUT = 1nF (Note 5) - 1.0 - A
Rise Time COUT = 1nF (Note 5) - 20 40 ns
Fall Time COUT = 1nF (Note 5) - 20 40 ns
GATE VOL UVLO Clamp Voltage VDD = 5V, ILOAD = 1mA - - 1.2 V
PWM
Maximum Duty Cycle
(ISL8840A, ISL8842A, ISL8843A) COMP = VREF 94.0 96.0 - %
Maximum Duty Cycle
(ISL8841A, ISL8844A, ISL8845A) COMP = VREF 47.0 48.0 - %
Minimum Duty Cycle COMP = GND - - 0 %
NOTES:
3. Specifications at -40°C and +105°C are guaranteed by +25°C test with margin limits.
4. This is the VDD current consumed when the device is active but not switching. Do es not include gate drive current.
5. These parameters, although guaranteed, are not 100% tested in production.
6. Adjust VDD above the start threshold and then lower to 15V.
Electrical Specifications ISL884xAA - Recommended operating conditions unless otherwise noted. Refer to Block Diagram and
Typical Application schematic onpage 3 and page 4. VDD = 15V, RT = 10kΩ, CT = 3.3nF, TA = -40 to +105°C
(Note 3). Typical values are at TA= +25°C (Continued)
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
ISL8840A, ISL8841A, ISL8842A, ISL8843A, ISL8844A, ISL8845A
8FN6320.3
April 18, 2007
Electrical Specifications ISL884xAM - Recommended operating conditions unless otherwise noted. Refer to Block Diagram and
T ypical Appl ication schematic. VDD = 15V, RT = 10kΩ, CT = 3.3nF, TA = -55 to +125°C (Note 7), T ypical values
are at TA= +25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
UNDERVOLTAGE LOCKOUT
START Threshold (ISL8840A, ISL8841A) 6.5 7.0 7.5 V
START Threshold (ISL8843A, ISL8845A) 8.0 8.4 9.0 V
START Threshold (ISL8842A, ISL8844A) (Note 10) 13.3 14.3 15.3 V
STOP Threshold (ISL8840A, ISL8841A) 6.1 6.6 6.9 V
STOP Threshold (ISL8843A, ISL8845A) 7.3 7.6 8.0 V
STOP Threshold (ISL8842A, ISL8844A) 8.0 8.8 9.6 V
Hysteresis (ISL8840A, ISL8841A) - 0.4 - V
Hysteresis (ISL8843A, ISL8845A) - 0.8 - V
Hysteresis (ISL8842A, ISL8844A) - 5.4 - V
Startup Current, IDD VDD < START Threshold - 90 125 μA
Operating Current, IDD (Note 8) - 2.9 4.0 mA
Operating Supply Current, IDIncludes 1nF GATE loading - 4.75 5.5 mA
REFERENCE VOLTAGE
Overall Accuracy Over line (VDD = 12V to 30V), load,
temperature 4.900 5.000 5.050 V
Long Term Stability TA = +125°C, 1000 hours (Note 9) - 5 - mV
Current Limit, Sourcing -20 - - mA
Current Limit, Sinking 5--mA
CURRENT SENSE
Input Bias Current VCS = 1V -1.0 - 1.0 μA
CS Offset Voltage VCS = 0V (Note 9) 95 100 105 mV
COMP to PWM Comparator Offset Voltage VCS = 0V (Note 9) 0.80 1.15 1.30 V
Input Signal, Maximum 0.97 1.00 1.03 V
Gain, ACS = ΔVCOMP/ΔVCS 0 < VCS < 910mV, VFB = 0V 2.5 3.0 3.5 V/V
CS to OUT Delay -3560ns
ERROR AMPLIFIER
Open Loop Voltage Gain (Note 9) 60 90 - dB
Unity Gain Bandwidth (Note 9) 1.0 1.5 - MHz
Reference Voltage VFB = VCOMP 2.460 2.500 2.535 V
FB Input Bias Current VFB = 0V -1.0 -0.2 1.0 μA
COMP Sink Current VCOMP = 1.5V, VFB = 2.7V 1.0 - - mA
COMP Source Current VCOMP = 1.5V, VFB = 2.3V -0.4 - - mA
COMP VOH VFB = 2.3V 4.80 - VREF V
COMP VOL VFB = 2.7V 0.4 - 1.0 V
PSRR Frequency = 120Hz, VDD = 12V to
30V (Note 9) 60 80 - dB
OSCILLATOR
Frequency Accuracy Initial, TA = +25°C 485153kHz
Frequency Variation with VDD TA = +25°C, (f30V - f10V)/f30V -0.21.0%
Temperature Stability (Note 9) - - 5 %
ISL8840A, ISL8841A, ISL8842A, ISL8843A, ISL8844A, ISL8845A
9FN6320.3
April 18, 2007
Amplitude, Peak to Peak Static Test - 1.75 - V
RTCT Discharge Voltage (Valley Voltage) Static Test - 1.0 - V
Discharge Current RTCT = 2.0V 6.2 8.0 8.5 mA
OUTPUT
Gate VOH VDD - OUT, IOUT = -200mA - 1.0 2.0 V
Gate VOL OUT - GND, IOUT = 200mA - 1.0 2.0 V
Peak Output Current COUT = 1nF (Note 9) - 1 .0 - A
Rise Time COUT = 1nF (Note 9) - 20 40 ns
Fall Time COUT = 1nF (Note 9) - 20 40 ns
GATE VOL UVLO Clamp Voltage VDD = 5V, ILOAD = 1mA - - 1.2 V
PWM
Maximum Duty Cycle
(ISL8840A, ISL8842A, ISL8843A) COMP = VREF 94.0 96.0 - %
Maximum Duty Cycle
(ISL8841A, ISL8844A, ISL8845A) COMP = VREF 47.0 48.0 - %
Minimum Duty Cycle COMP = GND - - 0 %
NOTES:
7. Specifications at -55°C and +125°C are guaranteed by +25°C test with margin limits.
8. This is the VDD current consumed when the device is active but not switching. Does not include gate drive current.
9. These parameters, although guaranteed, are not 100% tested in production.
10. Adjust VDD above the start threshold and then lower to 15V.
Electrical Specifications ISL884xAM - Recommended operating conditions unless otherwise noted. Refer to Block Diagram and
T ypical Appl ication schematic. VDD = 15V, RT = 10kΩ, CT = 3.3nF, TA = -55 to +125°C (Note 7), T ypical values
are at TA= +25°C (Continued)
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
Typical Performance Curves
FIGURE 1. FREQUENCY vs TEMPERATURE FIGURE 2. REFERENCE VOLTAGE vs TEMPERATURE
-60 -40 -20 0 20 40 60 80 100 120 140
0.98
0.99
1.00
1.01
TEMPERATURE (°C)
NORMALIZED FREQUENCY
-60 -40 -20 0 20 40 60 80 100
0.995
0.996
0.997
0.998
0.999
1.000
1.001
TEMPERATURE (°C)
NORMALIZED VREF
140120
ISL8840A, ISL8841A, ISL8842A, ISL8843A, ISL8844A, ISL8845A
10 FN6320.3
April 18, 2007
Pin Descriptions
RTCT - This is the oscillator timing control pin. The
operational frequency and maximum duty cycle are set by
connecting a resistor, RT, between VREF and this pin and a
timing capacitor, CT, from this pin to GND. The oscillator
produces a sawtooth waveform with a programmable
frequency range up to 2.0MHz. The charge time, tC, the
discharge time, tD, the switching frequency, f, and the
maximum duty cycle, Dmax, can be approximated from the
following equations:
The formulae have increased error at higher frequencies due
to propagation delays. Figure 4 may be used as a guideline
in selecting the capacitor and resistor values required for a
given frequency.
COMP - COMP is the output of the error amplifier and the
input of the PWM comparator. The control loop frequency
compensation network is connected between the COMP and
FB pins.
FB - The output voltage feedback is connected to the
inverting input of the error amplifier through this pin. The
non-inverting input of the error amplifier is internally tied to a
reference voltage.
CS - This is the current sense input to the PWM comparator.
The range of the input signal is nominally 0V to 1.0V and has
an internal offset of 100mV.
GND - GND is the power and small signal reference gr ound
for all functions.
OUT - This is the drive output to the power switching device.
It is a high current output capable of driving the gate of a
power MOSFET with peak currents of 1.0A. This GATE
output is actively held low when VDD is below the UVLO
threshold.
VDD - VDD is the power connection for the device. The total
supply current will depend on the load applied to OUT. Total
IDD current is the sum of the operating current and the
average output current. Knowing the operating frequency, f,
and the MOSFET gate charge, Qg, the average output
current can be calculated from:
To optimize noise immunity, bypass VDD to GND with a
ceramic capacitor as close to the VDD and GND pins as
possible.
VREF - The 5.00V reference voltage output. +1.0/-1.5%
tolerance over line, load and operating temperature. Bypass
to GND with a 0.1μF to 3.3μF capacitor to filter this output as
needed.
Functional Description
Features
The ISL884xA current mode PWM makes an ideal choice for
low-cost flyback and forward topology applications. With its
greatly improved performance over industry standard parts,
it is the obvious choice for new designs or existing designs
which require updating.
Oscillator
The ISL884xA has a sawtooth oscillator with a
programmable frequency range to 2MHz, which can be
programmed with a resistor from VREF and a capacitor to
GND on the RTCT pin. (Please refer to Figure 4 for the
resistor and capacitance required for a given frequency.)
FIGURE 3. EA REFERENCE vs TEMPERATURE FIGURE 4. RESISTANCE FOR CT CAPACITOR VALUES GIVEN
Typical Performance Curves (Continued)
-60 -40 -20 0 20 40 60 80 100 120 140
0.996
0.997
0.998
1.000
1.001
TEMPERATURE (°C)
NORMALIZED EA REFERENCE
1 10 100
1
10
100
103
RT (kΩ)
FREQUENCY (Hz)
100pF
220pF
330pF
470pF
1.0nF
2.2nF
3.3nF
4.7nF
6.8nF
tC0.533 RT CT⋅⋅(EQ. 1)
tDRTCT In 0.008 RT 3.83
0.008 RT 1.71
---------------------------------------------
⋅⋅(EQ. 2)
f1t
CtD
+()=(EQ. 3)
Dt
Cf=(EQ. 4)
IOUT Qg f×=(EQ. 5)
ISL8840A, ISL8841A, ISL8842A, ISL8843A, ISL8844A, ISL8845A
11 FN6320.3
April 18, 2007
Soft-Start Operation
Soft-start must be implemented externally. One method,
illustrated below, clamps the voltage on COMP.
The COMP pin is clamped to the voltage on capacitor C1
plus a base-emitter junction by transistor Q1. C1 is charged
from VREF through resistor R1 and the base current of Q1.
At power-up C1 is fully discharged, COMP is at ~0.7V, and
the duty cycle is zero. As C1 charges, the voltage on COMP
increases, and the duty cycle increases in proportion to the
voltage on C1. When COMP reaches the steady state
operating point, the control loop takes over and soft start is
complete. C1 continues to charge up to VREF and no longer
affects COMP. During power down, diode D1 quickly
discharges C1 so that the soft start circuit is properly
initialized prior to the next power on sequence.
Gate Drive
The ISL884xA is capable of sourcing and sinking 1A peak
current. To limit the peak current through the IC, an optional
external resistor may be placed between the totem-pole
output of the IC (OUT pin) and the gate of the MOSFET. This
small series resistor also damp s any oscillations caused by
the resonant tank of the parasitic inductances in the traces of
the board and the FET ’s input capacitance.
Slope Compensation
For applications where the maximum duty cycle is less than
50%, slope compensation may be used to improve noise
immunity, particularly at lighter loads. The amount of slope
compensation required for noise immunity is determined
empirically, but is generally about 10% of the full scale
current feedback signal. For applicatio ns where the duty
cycle is greater than 50%, slope compensation is required to
prevent instability.
Slope compensation may be ac complished by summing an
external ramp with the current feedback signal or by
subtracting the external ramp from the voltage feedback
error signal. Adding the external ramp to the current
feedback signal is the more popular method.
From the small signal current-mode model [1] it can be
shown that the naturally-sampled modula to r gain, Fm,
without slope compensation, is in Equation 6.
where Sn is the slope of the sawtooth signal and Tsw is the
duration of the half-cycle. W hen an external ramp is added,
the modulator gain becomes:
where Se is slope of the external ramp and
The criteria for determining the correct amount of external
ramp can be determined by appropria tely setting the
damping factor of the double-pole located at the switching
frequency. The double-pole will be critically damped if the
Q-factor is set to 1, over-damped for Q < 1, and
under-damped for Q > 1. An under-damped condition may
result in current loop instability.
where D is the percent of on time during a switching cycle.
Setting Q = 1 and solving for Se yields
Since Sn and Se are the on time slopes of the current ramp
and the external ramp, respectively, they can be multiplied
by tON to obtain the voltage change that occurs during tON.
where Vn is the change in the current feedback signal (ΔI)
during the on time and Ve is the voltage that must be added
by the external ramp.
For a flyback convert er, Vn can be solved for in terms of
input voltage, current transducer components, and primary
inductance, yielding
where RCS is the current sense resistor, fsw is the switching
frequency, Lp is the primary inductance, V IN is the minimum
input voltage, and D is the maximum duty cycle.
FIGURE 5. SOFT-START
VREF
COMP
GND
ISL884xA
C1
Q1
D1 R1
Fm 1
SnTsw
--------------------
=(EQ. 6)
Fm 1
Sn Se+()Tsw
---------------------------------------1
mcSnTsw
----------------------------
== (EQ. 7)
mc1Se
Sn
-------
+= (EQ. 8)
Q1
πmc1D()0.5()
-------------------------------------------------
=(EQ. 9)
SeSn1
π
---0.5+
⎝⎠
⎛⎞
1
1D
------------- 1
⎝⎠
⎛⎞
=(EQ. 10)
VeVn1
π
---0.5+
⎝⎠
⎛⎞
1
1D
------------- 1
⎝⎠
⎛⎞
=(EQ. 11)
VeDTSW VIN RCS
⋅⋅
Lp
---------------------------------------------------- 1
π
---0.5+
⎝⎠
⎛⎞
1
1D
------------- 1
⎝⎠
⎛⎞
=V
(EQ. 12)
ISL8840A, ISL8841A, ISL8842A, ISL8843A, ISL8844A, ISL8845A
12 FN6320.3
April 18, 2007
The current sense signal at the end of the ON time for CCM
operation is:
where VCS is the voltage across the current sense resistor,
Ls is the secondary winding inductance, and IO is the output
current at current limit. Equation 13 assumes the voltage
drop across the output rectifier is negligible.
Since the peak current limit thresho ld is 1.00V, the total
current feedback signal plus the external ramp voltage must
sum to this value when the output load is at the current limit
threshold.
Substituting Equations 12 and 13 into Equation 14 an d
solving for RCS yields
Adding slope compensation is accomplished in the
ISL884xA using an external buffer transistor and the RTCT
signal. A typical application sums the buffered RTCT signal
with the current sense feedback and applies the result to the
CS pin as shown in Figure 6.
Assuming the designer has selected values for the RC filter
(R6 and C4) placed on the CS pin, the value of R9 required
to add the appropriate external ramp can be found by
superposition.
The factor of 2.05 in Equation 16 arises from the peak
amplitude of the sawtooth waveform on RTCT minus a
base-emitter junction drop. That voltage multiplied by the
maximum duty cycle is the voltage source for the slope
compensation. Rearranging to solve for R9 yields:
The value of RCS determined in Equation 15 must be
rescaled so that the current sense signal presented at the
CS pin is that predicted by Equation 13. The divider created
by R6 and R9 makes this necessary.
VCS NSRCS
NP
------------------------ IO1D()VOf⋅⋅
sw
2Ls
--------------------------------------------
+
⎝⎠
⎜⎟
⎛⎞
=V (EQ. 13)
VeVCS
+1=(EQ. 14)
RCS 1
Df
sw VIN
⋅⋅
Lp
-------------------------------
1
π
---0.5+
1D
------------------1
⎝⎠
⎜⎟
⎜⎟
⎛⎞
Ns
Np
-------IO1D()VOfsw
⋅⋅
2Ls
--------------------------------------------
+
⎝⎠
⎜⎟
⎛⎞
+
-----------------------------------------------------------------------------------------------------------------------------------------------------
=
(EQ. 15)
CS
RTCT
R6
C4
R9
ISL8843
VREF
FIGURE 6. SLOPE COMPENSATION
Ve2.05D R6
R6R9
+
----------------------------
=V(EQ. 16)
R92.05D Ve
()R6
Ve
----------------------------------------------
=Ω(EQ. 17)
RCS R6R9
+
R9
---------------------RCS
=(EQ. 18)
ISL8840A, ISL8841A, ISL8842A, ISL8843A, ISL8844A, ISL8845A
13 FN6320.3
April 18, 2007
Example:
VIN = 12V
VO = 48V
Ls = 800μH
Ns/Np = 10
Lp = 8.0μH
IO = 200mA
Switching Frequency, fsw = 200kHz
Duty Cycle, D = 28.6%
R6 = 499Ω
Solve for the current sense resistor, RCS, using Equation 15.
RCS = 295mΩ
Determine the amount of voltage, Ve, that must be added to
the current feedback signal using Eq uation 12.
Ve = 92.4mV
Using Equation 17, solve for the summing resistor, R9, from
CT to CS.
R9 = 2.67kΩ
Determine the new value of RCS (RCS) using Equation 18.
R’CS = 350mΩ
Additional slope compensation may be considered for
design margin. The above discussion determines the
minimum external ramp that is required. The buffer transistor
used to create the external ramp from RTCT should have a
sufficiently high gain (>200) so as to minimize the required
base current. Whatever base current is required reduces the
charging current into RTCT and will reduce the oscillator
frequency.
Fault Conditions
A Fault condition occurs if VREF falls below 4.65V. When a
Fault is detected OUT is disabled. When VREF exceeds
4.80V, the Fa ult condition clears, and OUT is enabled.
Ground Plane Requirements
Careful layout is essential for satisfactory operation of the
device. A good ground plane mu st be employed. A unique
section of the ground plane must be designated for high di/dt
currents associated with the output stage. VDD should be
bypassed directly to GND with good high frequency
capacitors.
References
[1] Ridley, R., “A New Continuous-Time Model for Current
Mode Control”, IEEE Transactions on Power
Electronics, Vol. 6, No. 2, April 1991.
ISL8840A, ISL8841A, ISL8842A, ISL8843A, ISL8844A, ISL8845A
14 FN6320.3
April 18, 2007
ISL8840A, ISL8841A, ISL8842A, ISL8843A, ISL8844A, ISL8845A
Small Outline Plastic Packages (SOIC)
INDEX
AREA E
D
N
123
-B-
0.25(0.010) C AMBS
e
-A-
L
B
M
-C-
A1
A
SEATING PLANE
0.10(0.004)
h x 45°
C
H0.25(0.010) BM M
α
NOTES:
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
2. Dimensioning and toleran cing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Inter-
lead flash and protrusions shall not exceed 0.25mm (0.010 inch ) per
side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions
are not necessarily exact.
M8.15 (JEDEC MS-012-AA ISSUE C)
8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE
SYMBOL
INCHES MILLIMETERS
NOTESMIN MAX MIN MAX
A 0.0532 0.0688 1.35 1.75 -
A1 0.0040 0.0098 0.10 0.25 -
B 0.013 0.020 0.33 0.51 9
C 0.0075 0.0098 0.19 0.25 -
D 0.1890 0.1968 4.80 5.00 3
E 0.1497 0.1574 3.80 4.00 4
e 0.050 BSC 1.27 BSC -
H 0.2284 0.2440 5.80 6.20 -
h 0.0099 0.0196 0.25 0.50 5
L 0.016 0.050 0.40 1.27 6
N8 87
α -
Rev. 1 6/05
15
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Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No lice nse is gran t ed by i mpli catio n or other wise u nder an y p a tent or patent rights of Intersil or its subsidiari es.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN6320.3
April 18, 2007
ISL8840A, ISL8841A, ISL8842A, ISL8843A, ISL8844A, ISL8845A
Mini Small Outline Plastic Packages (MSOP)
NOTES:
1. These package dimensions are within allowable dimensions of
JEDEC MO-187BA.
2. Dimensioning and tolerancing per ANSI Y14.5M-1994.
3. Dimension “D” does not include mold flash, protrusions or gate
burrs and are measured at Da tum Plane. Mold flash, p rotrusion
and gate burrs shall not exceed 0.15mm (0.006 inch) per side.
4. Dimension “E1” does not include interlead flash or protrusions
and are measured at Datum Plane. Interlead flash and
protrusions shall not exceed 0.15mm (0.006 inch) per side.
5. Formed leads shall be planar with respect to one another within
0.10mm (0.004) at seating Plane.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. Dimension “b” does not include dambar protrusion. Allowable
dambar protrusion shall be 0.08mm (0.003 inch) total in excess
of “b” dimension at maximum material condition. Minimum space
between protrusion and adjacent lead is 0.07mm (0.0027 inch).
10. Datums and to be determined at Datum plane
.
11. Controlling dimension: MILLIMETER. Converted inch dimen-
sions are for reference only.
L
0.25
(0.010)
L1
R1
R
4X θ
4X θ
GAUGE
PLANE
SEATING
PLANE
EE1
N
12
TOP VIEW
INDEX
AREA
-C-
-B-
0.20 (0.008) ABC
SEATING
PLANE
0.20 (0.008) C
0.10 (0.004) C
-A-
-H-
SIDE VIEW
b
eD
A
A1
A2
-B-
END VIEW
0.20 (0.008) CD
E1
C
L
C
a
- H -
-A - - B -
- H -
M8.118 (JEDEC MO-187AA)
8 LEAD MINI SMALL OUTLINE PLASTIC PACKAGE
SYMBOL
INCHES MILLIMETERS
NOTESMIN MAX MIN MAX
A0.037 0.043 0.94 1.10 -
A1 0.002 0.006 0.05 0.15 -
A2 0.030 0.037 0.75 0.95 -
b0.010 0.014 0.25 0.36 9
c0.004 0.008 0.09 0.20 -
D0.116 0.120 2.95 3.05 3
E1 0.116 0.120 2.95 3.05 4
e 0.026 BSC 0.65 BSC -
E0.187 0.199 4.75 5.05 -
L0.016 0.028 0.40 0.70 6
L1 0.037 REF 0.95 REF -
N8 87
R0.003 - 0.07 - -
R1 0.003 - 0.07 - -
05o15o5o15o-
α0o6o0o6o-
Rev. 2 01/03