DMP4065SQ 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON) max ID max TA = +25C 80m @ VGS = -10V -3.4A 100m @ VGS = -4.5V -3.0A BVDSS -40V Description and Applications Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) PPAP Capable (Note 4) Mechanical Data This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Battery Charging Power Management Functions DC-DC Converters Portable Power Adaptors Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.008 grams (Approximate) SOT23 D D G S G S Top View Top View Internal Schematic Ordering Information (Note 5) Notes: Part Number Case Packaging DMP4065SQ-7 SOT23 3,000/Tape & Reel DMP4065SQ-13 SOT23 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information SOT23 Date Code Key Year Code Month Code 2014 B Jan 1 P65 = Product Type Marking Code YM = Date Code Marking Y or Y= Year (ex: E = 2017) M = Month (ex: 9 = September) YM P65 2015 C Feb 2 DMP4065SQ Document number: DS39827 Rev. 2 - 2 Mar 3 2016 D Apr 4 May 5 2017 E Jun 6 1 of 7 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 Oct O 2020 H Nov N Dec D July 2017 (c) Diodes Incorporated DMP4065SQ Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -10V Steady State Continuous Drain Current (Note 7) VGS = -10V Steady State TA = +25C TA = +70C TA = +25C TA = +70C Value -40 20 -2.4 -1.9 ID Unit V V A IDM IAS EAS -3.4 -2.7 -20 -14 9.8 A A mJ Symbol PD RJA PD RJA TJ, TSTG Value 0.72 171 1.4 90 -55 to +150 Unit W C/W W C/W C ID Pulsed Drain Current Avalanche Current, L = 0.1mH Avalanche Energy, L = 0.1mH A Thermal Characteristics Characteristic Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient @TA = +25C (Note 6) Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient @TA = +25C (Note 6) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS -40 -- -- -- -- -- -- -1.0 100 V A nA VGS = 0V, ID = -250A VDS = -40V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) -1.0 -- -3.0 V RDS(ON) -- 64 85 80 100 m VSD -- -0.7 -1.2 V VDS = VGS, ID = -250A VGS = -10V, ID = -4.2A VGS = -4.5V, ID = -3.3A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd -- -- -- -- -- -- -- -- -- -- -- -- 587 88 40 14.4 6.1 12.2 1.8 2.4 3.6 2.9 36.3 15.3 -- -- -- -- -- -- -- -- -- -- -- -- pF pF pF nC nC nC nC ns ns ns ns tD(ON) tR tD(OFF) tF Test Condition VDS = -20V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -20V, ID = -4.2A VDD = -15V, VGS = -10V, ID = -1.0A, RG = 6 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMP4065SQ Document number: DS39827 Rev. 2 - 2 2 of 7 www.diodes.com July 2017 (c) Diodes Incorporated DMP4065SQ 15 15 VGS = -10.0V VGS = -5.0V T A =-55C VDS= -5V VGS = -3.5V TA =150C 12 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) )A ( T N E R 9 R U C N I 6 A R D ,D I 3 ID, DRAIN CURRENT (A) 12 VGS = -3.0V VGS = -2.5V T A =25C TA =125C 9 T A =85C 6 3 VGS = -2.0V 0 RD S(ON), DRAIN-SOURCE ON-RESISTANCE ( ) R 0 5 3 4 1 2 VGS -V GATE-SOURCE VOLTAGE (V) GS,,GATE-SOURCE 2.Typical TypicalTransfer Transfer Characteristics Characteristics Figure 2 0 0.2 0.5 0.18 0.45 -IR, REVERSE LEAKAGE CURRENT (A) ),N O (S D 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 0.14 0.12 VGS = -4.5V 0.1 0.08 0.06 VGS = -10V 0.04 0.02 0 0 2 4 6 8 10 12 14 16 18 -ID , DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 20 0 TA =150C T A =125C 0.1 TA =85C 0.08 0.04 0 2 4 6 8 10 12 14 16 18 -VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 20 VGS = -4.5V 0.14 0.06 ID = -3.3A 1.8 0.16 0.12 ID = -4.2A 0.05 0.2 0.18 5 VDS = -4.5V ) ? 0.4 ( tn e rr 0.35 u C 0.3 e g a k 0.25 a e L e 0.2 s re v 0.15 e R ,R 0.1 I 0.16 RD S(ON ), DRAIN-SOURCE ON-RESISTANCE (NO RMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ) ? ( E C N A T S I S E R -N O E C R U O S -N I A R D 0 T A =25C T A =-55C VGS = -10V 1.6 I D = -10A 1.4 VGS = -5V I D = -5A 1.2 1 0.8 0.02 0 0 3 6 9 12 I , DRAIN-CURRENT (A) -IDD , DRAIN CURRENT (A) Figure 5 vs.vs. Figure 5.Typical TypicalOn-Resistance On-Resistance Drain Drain Current Currentand andTemperature Temperature DMP4065SQ Document number: DS39827 Rev. 2 - 2 15 3 of 7 www.diodes.com 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature July 2017 (c) Diodes Incorporated DMP4065SQ 2 -VGS(TH), GATE THRESHOLD VOLTAGE (V) VGS(th ), GATE THRESHOLD VOLTAGE (V) R DS(ON), DRAIN-SOURCE ON-RESI STANCE () 0.15 0.12 VGS = -5.0V I D = -5.0A 0.09 VGS = -10V 0.06 ID = -10A 0.03 1.8 1.6 1.2 ID = -250A 1 0.8 0.6 -50 0 -50 I D = -1mA 1.4 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE ( C) Figure 8 Gate Threshold Variation vs. Junction Temperature 1000 15 T A = 85C CT , JUNCTION CAPACITANCE (pF) f = 1MHz 12 -IS, SOURCE CURRENT (A) I S, SOURCE CURRENT (A) 150 T A = 125C TA = 25C 9 T A = 150C T A = -55C 6 3 0 0 0.3 0.6 0.9 1.2 -V VSD SOURCE-DRAINVOLTAGE VOLTAGE(V) (V) SD, ,SOURCE-DRAIN Figure Figure99Diode DiodeForward ForwardVoltage Voltage vs. vs. Current Current Ciss 100 Coss Crss 10 1.5 0 5 10 15 20 25 30 35 -VVDS , ,DRAIN-SOURCE DRAIN-SOURCEVOLTAGE VOLTAGE(V) (V) DS Figure Capacitance Figure10 10Typical Typical Junction Junction Capacitance 40 100 10 RDS(on) Limited PW = 100s -ID , DRAIN CURRENT (A) 8 -VGS (V) 6 4 VDS = -20V, ID = -4.2A 2 10 1 PW = DC PW = 10s PW = 1s 0.1 PW = 100ms TTJJ(max) = 150 150 C (m ax ) = C 0.01 TTAA == 25 25C C PW = 10ms PW = 1ms VGS = -10V VSingle Pulse GS = 10V Single DUT onPulse 1 * MRP Board DUT on 1 * MRP Board 0.001 0 0 2 4 6 8 Qg (nC) Figure 11 Gate Charge DMP4065SQ Document number: DS39827 Rev. 2 - 2 10 12 4 of 7 www.diodes.com 0.1 1 10 -VDS , DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 July 2017 (c) Diodes Incorporated DMP4065SQ 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA (t) (t) = JA R = r(t) r(t) ** RR JA JA RJA = 173/W 173C/W R JA = Duty Cycle, Duty Cycle,DD= =t1/t1t2/ t2 D = Single Pulse 0.001 0.00001 0.0001 DMP4065SQ Document number: DS39827 Rev. 2 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 5 of 7 www.diodes.com 10 100 1000 July 2017 (c) Diodes Incorporated DMP4065SQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7 H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D F G SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0 8 -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y Dimensions C X X1 Y Y1 C Y1 X DMP4065SQ Document number: DS39827 Rev. 2 - 2 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 6 of 7 www.diodes.com July 2017 (c) Diodes Incorporated DMP4065SQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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