DMP4065SQ
Document number: DS39827 Rev. 2 - 2
1 of 7
www.diodes.com
July 2017
© Diodes Incorporated
DMP4065SQ
40V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
RDS(ON) max
ID max
TA = +25°C
-40V
80mΩ @ VGS = -10V
-3.4A
100mΩ @ VGS = -4.5V
-3.0A
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors
SOT23
Ordering Information (Note 5)
Part Number
Case
Packaging
DMP4065SQ-7
SOT23
3,000/Tape & Reel
DMP4065SQ-13
SOT23
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
SOT23
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
Code
B
C
D
E
F
G
H
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
Internal Schematic
Top View
D
GS
P65 = Product Type Marking Code
YM = Date Code Marking
Y or Y= Year (ex: E = 2017)
M = Month (ex: 9 = September)
D
S
G
P65
YM
DMP4065SQ
Document number: DS39827 Rev. 2 - 2
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July 2017
© Diodes Incorporated
DMP4065SQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-40
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6) VGS = -10V
Steady
State
TA = +25°C
TA = +70°C
ID
-2.4
-1.9
A
Continuous Drain Current (Note 7) VGS = -10V
Steady
State
TA = +25°C
TA = +70°C
ID
-3.4
-2.7
A
Pulsed Drain Current
IDM
-20
A
Avalanche Current, L = 0.1mH
IAS
-14
A
Avalanche Energy, L = 0.1mH
EAS
9.8
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 6)
PD
0.72
W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
RθJA
171
°C/W
Power Dissipation (Note 7)
PD
1.4
W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
RθJA
90
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
-40
—
—
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
—
—
-1.0
μA
VDS = -40V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
-1.0
—
-3.0
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS(ON)
—
64
85
80
100
mΩ
VGS = -10V, ID = -4.2A
VGS = -4.5V, ID = -3.3A
Diode Forward Voltage
VSD
—
-0.7
-1.2
V
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
—
587
—
pF
VDS = -20V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
—
88
—
pF
Reverse Transfer Capacitance
Crss
—
40
—
pF
Gate Resistance
Rg
—
14.4
—
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -4.5V)
Qg
—
6.1
—
nC
VDS = -20V, ID = -4.2A
Total Gate Charge (VGS = -10V)
Qg
—
12.2
—
nC
Gate-Source Charge
Qgs
—
1.8
—
nC
Gate-Drain Charge
Qgd
—
2.4
—
nC
Turn-On Delay Time
tD(ON)
—
3.6
—
ns
VDD = -15V, VGS = -10V,
ID = -1.0A, RG = 6Ω
Turn-On Rise Time
tR
—
2.9
—
ns
Turn-Off Delay Time
tD(OFF)
—
36.3
—
ns
Turn-Off Fall Time
tF
—
15.3
—
ns
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMP4065SQ
Document number: DS39827 Rev. 2 - 2
3 of 7
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July 2017
© Diodes Incorporated
DMP4065SQ
0
3
6
9
12
15
0 1 2 3 4 5
I , DRAIN CURRENT (A)
D
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
T =-55°C
A
T =25°C
A
T =150°C
A
T =125°C
A
T =85°C
A
V = -5V
DS
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0 3 6 9 12 15
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON) Ω
I , DRAIN-CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
T =-55°C
A
T =25°C
A
T =85°C
A
T =125°C
A
T =150°C
A
V = -4.5V
GS
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
R , DRAIN-SOURCE
DS(ON)
ON-RESISTANCE (NORMALIZED)
T , JUNCTION TEMPERATURE ( C)
J°
Figure 6 On-Resistance Variation with Temperature
V = -5V
GS
I = -5A
D
V = -10V
GS
I = -10A
D
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0
2
4
6
8
10
12
14
16
18
20
I
,
R
e
v
e
r
s
e
L
e
a
k
a
g
e
C
u
r
r
e
n
t
(
)
R
?
-VGS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
ID = -4.2A
ID = -3.3A
VDS
= -4.5V
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0
2
4
6
8
10
12
14
16
18
20
VGS
= -4.5V
VGS
= -10V
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
-ID
, DRAIN-SOURCE CURRENT (A)
R
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
D
S
(
O
N
)
,
?
0
3
6
9
12
15
0
1
2
3
4
5
Figure 1 Typical Output Characteristic
-VDS
, DRAIN-SOURCE VOLTAGE (V)
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
VGS = -5.0V
VGS = -10.0V
VGS = -3.5V
VGS = -3.0V
VGS = -2.5V
VGS = -2.0V
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
-IR, REVERSE LEAKAGE CURRENT (A)
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristics
-ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs.
Drain Current and Temperature
DMP4065SQ
Document number: DS39827 Rev. 2 - 2
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July 2017
© Diodes Incorporated
DMP4065SQ
0
0.03
0.06
0.09
0.12
0.15
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J°
Figure 7 On-Resistance Variation with Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON) Ω
V = -5.0V
GS
I = -5.0A
D
V = -10V
GS
I = -10A
D
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Figure 8 Gate Threshold Variation vs.
Junction Temperature
V , GATE THRESHOLD VOLTAGE (V)
GS(th)
I = -1mA
D
I = -250µA
D
0
3
6
9
12
15
0 0.3 0.6 0.9 1.2 1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I , SOURCE CURRENT (A)
S
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = 25°C
A
T = -55°C
A
10
100
1000
0 5 10 15 20 25 30 35 40
f = 1MHz
C , JUNCTION CAPACITANCE (pF)
T
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
Ciss
Coss
Crss
0
2
4
6
8
10
0246810 12
-VGS (V)
Qg(nC)
Figure 11 Gate Charge
VDS = -20V, ID= -4.2A
0.001
0.01
0.1
1
10
100
0.1 1 10 100
RDS(on)
Limited
P = DC
W
P = 100µs
W
P = 10s
WP = 1s
W
P = 100ms
W
P = 10ms
WP = 1ms
W
-I , DRAIN CURRENT (A)
D
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 12 SOA, Safe Operation Area
T = 150°C
J(max)
T = 25°C
A
V = 10V
GS
Single Pulse
DUT on 1 * MRP Board
-VGS(TH), GATE THRESHOLD VOLTAGE (V)
-IS, SOURCE CURRENT (A)
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
TJ(max) = 150°C
TA = 25°C
VGS = -10V
Single Pulse
DUT on 1 * MRP Board
DMP4065SQ
Document number: DS39827 Rev. 2 - 2
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© Diodes Incorporated
DMP4065SQ
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
r(t), TRANSIENT THERMAL RESISTANCE
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
R (t) = r(t) * R
JA JA
R = 173°C/W
JA
Duty Cycle, D = t1/ t2
D = 0.9
D = 0.7
D = Single Pulse
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
RθJA(t) = r(t) * RθJA
RθJA = 173℃/W
Duty Cycle, D = t1 / t2
DMP4065SQ
Document number: DS39827 Rev. 2 - 2
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July 2017
© Diodes Incorporated
DMP4065SQ
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
X
Y
Y1 C
X1
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
a
0°
8°
--
All Dimensions in mm
Dimensions
Value (in mm)
C
2.0
X
0.8
X1
1.35
Y
0.9
Y1
2.9
DMP4065SQ
Document number: DS39827 Rev. 2 - 2
7 of 7
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July 2017
© Diodes Incorporated
DMP4065SQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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website, harmless against all damages.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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