R
e
visi
o
n Da
te
: 05/20/0
5
The Aerofl ex / Metelics MSS40,000 Series of Schottk
y
diodes
are fabricated on N-T
y
pe epitaxial substrates usin
g
proprietar
y
processes that
y
ield the hi
g
hest FC
O
s in the industr
y
.
O
ptimum
mixer
p
erformance is obtained with L
O
p
ower of 0 dBm to +6
dBm per diode
.
•
V
F
,
R
D
and
J
matchin
g
options
•
Chip, beam lead or packaged device
s
•
H
i
-Rel screen
i
n
g
per MIL-PRF-1950
0
and MIL-PRF-38534 available
Description Features
MSS40
,
000 Series
M
edium Barrier
S
ilicon
S
chottky Diodes
Chip
Electrical Specifications, TA = 25 ºC
Absolute Maximum Ratings
P
arameters
R
atin
g
R
everse
V
o
l
ta
ge
R
ated
V
BR
F
orward
C
urrent
50
m
A
O
peration Temperature
-
65 º
C
to +150 º
C
S
tora
g
e Temperatur
e
-
65 º
C
to +150 º
C
P
ower Dissipatio
n
100 mW per junction at T
A
T
= 25 ºC, derate
A
linearly to zero at T
A
T
=
+150 º
C
S
oldering Temperature (Packaged)
+
260 º
C
f
o
r 5 s
ec.
B
eam Lead Pull Stren
g
t
h
4 grams m
i
n
i
mu
m
M
o
d
e
l
C
on
fi
g
uratio
n
V
F
TYP
V
V
BR
MIN
V
C
J
TYP
/
MAX
pF
R
S
TYP
R
D
MAX
F
CO
TYP
G
H
z
O
utline
MSS
40,045-
C
15
S
in
g
le Junctio
n
0.
4
2
3
0.09
/
0.
1
2
7
15
2
53
C
15
MSS
40
,
048-
C
15
S
ingle Junctio
n
0.
4
0
3
0.
12 /
0.
1
5
7
15
190
C
15
T
es
t
Condition
s
I
F
=
1
m
A
I
R
=
R
10
μ
A
V
R
=
0
V
F
= 1
MH
z
I
F
= 5 m
A
R
ev
i
s
i
on Date: 05/20/05
M
SS40
,
000 Serie
s
Medium Barrier
S
ilicon
S
chottky Diodes
2
Aerofl ex / Metelics, Inc
.
w
ww.a
e
r
ofl
e
x-m
ete
li
c
s.
co
m
Beam Lead
Electrical Specifications, TA = 25 ºC
Packaged
Electrical Specifications, TA = 25 ºC
M
o
d
e
l
C
on
fi
g
uration
V
F
TYP
V
V
BR
MIN
V
C
J
TYP
/
MAX
pF
R
S
TYP
R
D
MAX
F
CO
TYP
G
H
z
O
utline
MSS
40,141-B10B
S
ingle Junctio
n
0.
4
2
3
0.0
6 /
0.
1
0
1
0
22
265
B
1
0
B
M
SS40,148-B10B
Single Junctio
n
0.4
0
3
0.12
/
0.1
5
7
17
1
90
B
10
B
MSS
40,155-B10B
S
in
g
le Junctio
n
0.38
3
0.
2
5
/
0.30
5
1
3
12
7
B
1
0
B
M
SS40
,
244-B2
0
S
e
ri
e
s T
ee
0
.44
3
0.08 / 0.1
2
19
2
2
1
0
5
B20
MSS
40,248-B2
0
S
eries Te
e
0.
44
3
0.
12
/
0.
1
5
1
0
1
71
33
B
2
0
M
SS40
,
255-B2
0
S
e
ri
e
s T
ee
0.38
3
0.
2
5
/
0.30
5
15
1
27 B2
0
MSS
40,448-B4
1
R
in
g
Q
ua
d
0.4
0
3
0.12
/
0.1
5
7
17
19
0
B41
MSS
40
,
455-B4
0
R
ing
Q
ua
d
0.
38
3
0.25 / 0.30 5
1
7
12
7 B40
T
est
C
onditions
I
F
= 1 m
A
I
R
=
R
1
0
μ
A
V
R
= 0 V
R
F
= 1
MHz
I
F
= 5 m
A
M
o
d
e
l
C
onfi guration
V
F
TY
P
V
V
BR
MI
N
V
C
T
T
YP / MAX
p
F
R
S
TYP
R
D
MAX
F
C
O
TY
P
G
H
z
Out
lin
e
M
SS40,045-P55
Sin
g
le Junctio
n
0.42
3
0.21
/
0.27
7
15
25
3
P
55
MSS
40,045-P8
6
S
ingle Junctio
n
0.
4
2
3
0.
24 /
0.30
71
5
2
53
P
8
6
M
SS40
,
048-P55
Single Junctio
n
0.4
0
3
0.24
/
0.30
7
15
1
90
P
55
MSS
40,048-P8
6
S
in
g
le Junctio
n
0.
4
0
3
0.
27 /
0.33
71
5
190
P
8
6
M
SS40
,
141-E2
5
Single Junctio
n
0.42
3
0
.16
/
0.2
2
10
18
265 E25
MSS
40,141-H2
0
S
in
g
le Junctio
n
0.
4
2
3
0.
24
/
0.30
10
1
8
2
65
H
2
0
M
SS40
,
148-E2
5
Single Junctio
n
0.4
0
3
0
.22 / 0.28
7
15
19
0 E25
MSS
40,148-H2
0
S
in
g
le Junctio
n
0
.4
0
3
0.30
/
0.36
7
15
1
90
H
20
MSS
40
,
155-E2
5
S
ingle Junctio
n
0.38
3
0.35
/
0.
41
5
14
12
7E2
5
M
SS40,155-H2
0
Sin
g
le Junctio
n
0
.3
8
3
0
.43
/
0.50
5
14
12 7
H
20
MSS
40,244-E35
S
eries Te
e
0.
44
3
0.
1
8
/
0.
24
19
28
105
E
35
M
SS40
,
248-E35
S
e
ri
e
s T
ee
0.44
3
0
.22
/
0.28
10
18
1
3
3
E
35
MSS
40,255-E35
S
eries Te
e
0.38
3
0.35
/
0.
41
5
1
4
12
7
E35
M
SS40
,
448-E45
R
ing Qua
d
0.4
0
3
0.24
/
0.30
7
15
1
90 E45
MSS
40,455-E45
R
in
g
Q
ua
d
0.38
3
0.3
2
/
0.38
5
14
12 7
E
4
5
M
SS40
,
455-H45
R
ing Qua
d
0
.
38
3
0
.42 / 0.48
5
14
1
27
H
40
T
est
C
onditions
I
F
= 1 m
A
I
R
=
R
10
μ
A
V
R
= 0
V
F
= 1 MHz
I
F
= 5 m
A
R
ev
i
s
i
on Date: 05/20/0
5
3
Aerofl ex / Metelics, Inc
.
w
ww.a
e
r
ofl
e
x-m
ete
li
c
s.
co
m
Typical Performance, TA = 25 ºC
MSS40
,
000 Serie
s
M
edium Barrier
S
ilicon
S
chottky Diode
s
]23
4
.
[
71 ]033.[31
]234.[71 ]
0
33.[31
]820.0[1.1 ]
320
.0[9.
0
]251.0[6 ]
2
01.
0
[4
.
tcatnoCpoT
tc
a
tnoCk
c
a
B
C
1
5
]503.0[21 ]922.0[9
]838.0
[
3
3]
1
17.0[82
]
45
2.0[0
1]251.0[6
]
5
0
3.
0
[21 ]922.0[9
]410.0[5
5
.
0]600.0[52.0
]980.0[5.3 ]030.0[2.1
]310.0[5.0nahTsseL
kcaB
w
eiVkcaB H
n
1.0=pL F
p510.0
=p
C
B
1
0B
]3
10
.
0
[5.
0n
ah
tss
eL
]980.0[5.3 ]
0
3
0.0[2.
1
]41
0
.0[5
5.
0]600.0[52.0
]
87
1
.
0[7 ]20
1
.
0
[4 slP3
02B
kca
B
w
ei
Vk
caB
]485.0[32 ]384.0[91
]503.0[21 ]302.0[8
slP2]452.0[01 ]
2
51
.
0[
6
]863.0[5.4
1]
762
.
0
[5
.
0
1
LC
e
d
oht
a
C
B
2
0

M!

M!
     
   

.& :)&





Fi
gure 1
.
Fi
gure 3
.
Fi
gure 2.
Fi
gure 4.
S
mith
C
hart - 50 R
efe
r
e
n
ce













d
     
'(Z '(Z
'(Z
'(Z
0
)2%#4M!D"M
)2%#4M!D"M
)2%#4M!D"M
Forward Voltage vs. Current
v
s.
C
urren
t
I
F
V
f
V
(V)
f
NF
(
dB
)
L
.O. Power (dBm)
Reverse Current vs
s. Voltage
se Current vs. Volta
I
R
V
R
(V)
Z
IF
(
F
)
N
F
&
Z
IF
vs. LO Power
F
Outline Drawings
R
evision Date:
05/
2
0/05
Aerofl ex / Metelics
Ae
r
ofl
e
x Mi
c
r
oe
l
ec
tr
o
ni
c
So
l
u
ti
o
n
s
9
75 Stewart Drive, Sunn
y
vale, CA 9408
5
TEL: 408-7
3
7-818
1
Fa
x: 4
08
-7
33
-7
6
4
5
www.aerofl ex-metelics.com sales@aerofl ex-metelics.com
A
ero
fl
ex
/
Metelics, Inc. reserves the ri
g
ht to make chan
g
es to an
y
products
and services herein at an
y
time without notice.
C
onsult Aero
fl
ex or an
authorized sales representative to verif
y
that the information in this data
s
heet is current be
f
ore usin
g
this product. Aero
fl
ex does not assume an
y
r
esponsibilit
y
or liabilit
y
arisin
g
out o
f
the application or use o
f
an
y
produc
t
o
r serv
i
ce
d
escr
ib
e
d
h
ere
i
n, except as express
ly
a
g
ree
d
to
i
n wr
i
t
i
n
g
by
A
ero
fl
ex; nor does the purchase, lease, or use o
f
a product or service
f
rom
A
ero
fl
ex conve
y
a license under an
y
patent ri
g
hts, cop
y
ri
g
hts, trademark
r
i
g
hts, or an
y
other of the intellectual ri
g
hts of Aerofl ex or of third parties.
C
op
y
ri
g
ht 2003 Aero
fl
ex
/
Metelics. All ri
g
hts reserved. attributes represented b
y
these three icons:
solution-minded, per
f
ormance-driven and customer-
f
ocused
.
Outline Drawings
MSS40
,
000 Series
Medium Barrier
S
ilicon
S
chottk
y
Di
o
d
es
0
4B
]
980.
0
[
5.3 ]03
0
.0[2.
1
]410.0[55.
0]600.0[52.0
]310.0[5.0nahts
s
eL
]22
2
.0[57.8 ]121.0[5
7
.4 slP4
]503.0[21 ]
3
0
2
.
0
[
8slP
4
]2
51.0[6 ]201.0[4 s
l
P4
]
6
45
.
0[5
.
12 ]544.0[5.71 QS
kcaB
weiVk
c
aB
LC
LC
1
4
B
]980.0[5.3 ]03
0
.
0
[2.
1
]
410
.0
[
55.
0]600.0[52.0
]310.0[5.0nahts
s
eL
]612.0[5
.
8]041.0[5.5 slP4
]121.0[57.4 ]38
0.
0
[
52.3 slP4
]3
43
.0
[5.
3
1]
762.
0
[
5
.
01QS
k
c
a
B
w
e
iV
k
c
aB
sl
P
2
]
7
21
.
0[5 ]
67
0
.
0
[3
.xaM]072.1[05
]65
3
.0[4
1]
30
2
.0[8
yxopE
.ni
M
]
230.
2
[08
ci
mar
e
C
5
Fp7
0
Hn
4
]754.0[81 ]503.
0
[21
ed
o
h
t
aCsid
ae
L
tuC
.Q
S]7
93
.
1[
5
5]341.1[54
18 [0.457] 3 Pls
12 [0.305]
50 [1.270] Max.
14 [0.356]
8[0.203]
Ceramic
Epoxy
80 [2.032] Min.
5 [0.127] 3 Pls
3 [0.076]
E35
Cp=0.07pF
Lp=0.4nH 55 [1.397] SQ.
45 [1.143]
18 [0.457] 4 Pls
12 [0.305]
50 [1.270] Max.
14 [0.356]
8 [0.203]
Ceramic
Epoxy
80 [2.032] Min.
5 [0.127] 4 Pls
3 [0.076]
E45
Cp=0.07pF
Lp=0.4nH 55 [1.397] SQ.
45 [1.143]
]195.
2
[201 ]7
50.2[
18
]485.0
[3
2]234
.
0[
71
a
iD
]246.2[401 ]
733.2[29 er
au
q
S]
2
03.3[03
1slP2.niM
]25
1
.0[
6]670
.0[3
]988
.
0
[53 ]
536.0[52
]
3
02.0[8 ]201.0[4
edohtaCsidaeltuC
Fp81.0= Hn
5.0
=
0
2
102 [2.591]
81 [2.057]
23 [0.584]
17 [0.432]
Dia
104 [2.642]
92 [2.337]
Square 130 [3.302]
Min. 3 Pls
6 [0.152]
3 [0.076]
35 [0.889]
25
[
0.635
]
8 [0.203]
4 [0.102]
Cut lead is Cathode
Cp=0.18pF
Lp=0.5nH
H30
102 [2.591]
81 [2.057]
23 [0.584]
17 [0.432]
Dia
104 [2.642]
92 [2.337]
Square
130 [3.302]
Min. 4 Pls
6 [0.152]
3 [0.076]
35 [0.889]
25 [0.635]
8 [0.203]
4 [0.102]
Cp=0.18pF
Lp=0.5nH
H40
]
7
93.1
[
55 ]3
4
1
.1[
54
]7
9
3.1[55 ]
59
2
.1[
1
5.a
i
D
Heatsink is anode
cimar
eC ydoB
15 [0.381]
10 [0.254]
64 [1.626] Dia.
60 [1.524]
82 [2.083]
70 [1.778]
P86
Cp=0.15pF
Lp=1nH
64 [1.626]
60 [1.524]
210 [5.334]
190 [4.826]
84 [2.134] Dia.
78 [1.981] Heatsink is anode
Ceramic
Body
(non-hermetic)
H
20
(
h
e
rm
etic)
B
4
0
B41
P
55
(
h
e
rm
etic)
H
30 (h
e
rm
etic
)
E
2
5
(
non-hermetic
)
E3
5 (non-hermetic
)
H
4
5
(
hermetic
)
P
86
(
h
e
rm
etic)