OPTOELECTRONICS REFLECTIVE OBJECT SENSORS QRB1113/111 420 (10.67) 328 (8.33) (A) 062 R NOM (K) .226 (5,74) > (E) i (C) 150 (3.81) NOM POINT OF OPTIMUM RESPONSE 703 (17.86) Oo 373 (9.47) A l- 903 (22.94) J 7 .603 (15.32) F- j 210 (5.33) c 1 $T2179 FUNCTION (C) COLLECTOR (E) EMITTER (kK) CATHODE (A) ANODE NOTES: 1. DIMENSIONS ARE IN INCHES (mm). 2. TOLERANCE IS +.010 (.25) UNLESS OTHERWISE SPECIFIED. The QRB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes withit its field of view. The area of the optimum response approximates a circle .200" in diameter. Phototransistor output @ High Sensitivity @ Low cost plastic housing a IR transparent plastic covers for dust protection. REFLECTIVE OBJECT SENSORS OPTOELECTAOQHICS Storage Temperature 40C to + 85C Operating Temperature 40C to + 85C Saldering: Lead Temperature (Iron)... 0... c eee eter t ener et renter eee n tet ee ates 240C for 5 sec. Lead Temperature (FIOW) 2.00... cece nent t etter rete tenner ees 260C for 10 sec. INPUT DIODE Continuous Forward Current ...0.0 0. ccc ccc crete etn tenn ernst a reer t eres e reer neee 50 mA Reverse Voltage .. 0... ccc eee cee renee ert nner reser eee ersten rcs: 5.0 Volts Power Dissipation ......0..0 0202 c cece ene tert t eet eta n nee ree nates ener seer esses 100 mw" OUTPUT TRANSISTOR Collector-Emitter Voltage . 2... cece ten errr reer ners renee rene rtr ern re ers 30 Volts Emitter-Collector Voltage .... 6... cece nent nee eee e neste nee en seen esr r ne rer rans 5.0 Volts Collector Current . 0.0.0.0 ccc cece cect renee tener ee ene neers ene renee eres rte seers erent ey 40 mA Power Dissipation ........ 000s eden rere eet eee eer e een ener rer ter esr neneen rrr rritenen neers 100 mw ied) i TEST CONDITIONS INPUT DIODE Forward Voltage Ve 1.70 Vv l= 40mA Reverse Leakage Current in 100 pA Vi = 2.0V OUTPUT TRANSISTOR Emitter-Collector Breakdown BV eco 5 _ Vv lz = 100pA, Ee = 0 Collector-Emitter Breakdown BV ceo 30 _ Vv lp = 1.0 mA, Ee = 0 Collector-Emitter Leakage leeo 100 nA Vo = 10.0V, Ee = 0 COUPLED On-State Collector Current QRB1113 leony 0.20 _ mA lp = 40 MA, Vee = 5 V, D = .150" QRB1114 Levon 0.60 3.00 mA le = 40 MA, Veg = 5 V, D = .150" 5 Crosstalk lex _ 1.00 vA |. = 40 mA, Vee = 5V Saturation Voltage Veersany 4 Vv |, = 40 mA, |, = 0.1 mA, D = .160"69 NOTE . Derate power dissipation linearly 1.67 mW/C above 25C. . RMA flux is recommended. | Methanol or isopropyl alcohols are recommended as cleaning agents. . Soldering iron Ve" (1.6mm) from housing Dis the distance from the assembly face to the reflective surface. - Measured using Eastman Kodak neutral test card with 90% diffused reflecting surface. Cross talk is the photocurrent measured with current to the input diode and no reflecting surface. NOMAD =|