Document Number: 94562 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 08-Jun-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Surface Mountable Phase Control SCR, 10 A
VS-10TTS08SPbF High Voltage Series
Vishay Semiconductors
FEATURES
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21
definition
• Designed and qualified for industrial level
APPLICATIONS
• Input rectification (soft start)
• Vishay input diodes, switches and output rectifiers which
are available in identical package outlines
DESCRIPTION
The VS-10TTS08SPbF High Voltage Series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
Note
•T
A = 55 °C, TJ = 125 °C, footprint 300 mm2
PRODUCT SUMMARY
VT at 6.5 A < 1.15 V
ITSM 140 A
VRRM 800 V
3
Gate
2
Anode
1
Cathode
D
2
PAK
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
NEMA FR-4 or G-10 glass fabric-based epoxy
with 4 oz. (140 μm) copper 2.5 3.5
A
Aluminum IMS, RthCA = 15 °C/W 6.3 9.5
Aluminum IMS with heatsink, RthCA = 5 °C/W 14.0 18.5
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV) Sinusoidal waveform 6.5
A
IRMS 10
VRRM/VDRM 800 V
ITSM 140 A
VT6.5 A, TJ = 25 °C 1.15 V
dV/dt 150 V/μs
dI/dt 100 A/μs
TJRange - 40 to 125 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
VS-10TTS08SPbF 800 800 1.0
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94562
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 08-Jun-10
VS-10TTS08SPbF High Voltage Series
Vishay Semiconductors Surface Mountable
Phase Control SCR, 10 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current IT(AV) TC = 112 °C, 180° conduction half sine wave 6.5
A
Maximum RMS on-state current IT(RMS) 10
Maximum peak, one-cycle,
non-repetitive surge current ITSM
10 ms sine pulse, rated VRRM applied, TJ = 125 °C 120
10 ms sine pulse, no voltage reapplied, TJ = 125 °C 140
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied, TJ = 125 °C 72 A2s
10 ms sine pulse, no voltage reapplied, TJ = 125 °C 100
Maximum I2√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied, TJ = 125 °C 1000 A2√s
Maximum on-state voltage drop VTM 6.5 A, TJ = 25 °C 1.15 V
On-state slope resistance rtTJ = 125 °C 17.3 mΩ
Threshold voltage VT(TO) 0.85 V
Maximum reverse and direct leakage current IRM/IDM
TJ = 25 °C VR = Rated VRRM/VDRM
0.05
mA
TJ = 125 °C 1.0
Typical holding current IHAnode supply = 6 V, resistive load, initial IT = 1 A 30
Maximum latching current ILAnode supply = 6 V, resistive load 50
Maximum rate of rise of off-state voltage dV/dt TJ = 25 °C 150 V/μs
Maximum rate of rise of turned-on current dI/dt 100 A/μs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 8.0 W
Maximum average gate power PG(AV) 2.0
Maximum peak positive gate current +IGM 1.5 A
Maximum peak negative gate voltage -VGM 10 V
Maximum required DC gate current to trigger IGT
Anode supply = 6 V, resistive load, TJ = - 65 °C 20
mAAnode supply = 6 V, resistive load, TJ = 25 °C 15
Anode supply = 6 V, resistive load, TJ = 125 °C 10
Maximum required DC gate
voltage to trigger VGT
Anode supply = 6 V, resistive load, TJ = - 65 °C 1.2
V
Anode supply = 6 V, resistive load, TJ = 25 °C 1
Anode supply = 6 V, resistive load, TJ = 125 °C 0.7
Maximum DC gate voltage not to trigger VGD TJ = 125 °C, VDRM = Rated value 0.2
Maximum DC gate current not to trigger IGD 0.1 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time tgt TJ = 25 °C 0.8
μsTypical reverse recovery time trr TJ = 125 °C 3
Typical turn-off time tq100
Document Number: 94562 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 08-Jun-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
VS-10TTS08SPbF High Voltage Series
Surface Mountable
Phase Control SCR, 10 A Vishay Semiconductors
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg - 40 to 125 °C
Soldering temperature TSFor 10 s (1.6 mm from case) 240
Maximum thermal resistance,
junction to case RthJC DC operation 1.5
°C/W
Typical thermal resistance,
junction to ambient (PCB mount) RthJA (1) 40
Approximate weight 2g
0.07 oz.
Marking device Case style D2PAK (SMD-220) 10TTS08S
105
110
115
120
125
01234567
30°
60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Cond uct ion Angle
Average On-state Current (A)
10TTS08
R (DC) = 1.5 K/W
thJC
105
110
115
120
125
024681012
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
10TTS08
R (DC) = 1.5 K/W
thJC
0
1
2
3
4
5
6
7
8
01234567
RMS Limit
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
10TTS08
T = 125°C
J
0
2
4
6
8
10
12
024681012
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Averag e On -state Current (A)
10TTS08
T = 125°C
J
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94562
4DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 08-Jun-10
VS-10TTS08SPbF High Voltage Series
Vishay Semiconductors Surface Mountable
Phase Control SCR, 10 A
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
60
70
80
90
100
110
120
130
110100
Number Of Equal A mplitude Half Cycle Current Puls es (N)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Peak Half Sine Wave On-state Current (A)
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
10TTS08
50
60
70
80
90
100
110
120
130
140
150
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maint ained.
Initial T = 125
°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
10TTS08
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
10TTS08
0.01
0.1
1
10
0.0001 0.001 0. 01 0.1 1
Square Wave Pulse Duration (s)
Steady State Value
(DC Operation)
Single Pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
thJC
Transient Thermal Impedance Z (°C/W)
10TTS08
Document Number: 94562 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 08-Jun-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5
VS-10TTS08SPbF High Voltage Series
Surface Mountable
Phase Control SCR, 10 A Vishay Semiconductors
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95046
Part marking information www.vishay.com/doc?95054
Packaging information www.vishay.com/doc?95032
- Tape and reel option:
1- HPP product suffix
2- Current rating, RMS value
3- Circuit configuration:
4- Package:
-PbF = Lead (Pb)-free
5
6- Voltage code x 100 = VRRM
T = Single thyristor
- Type of silicon:
T = TO-220AC
S = Converter grade
9
7- S = TO-220 D2PAK (SMD-220) version
8
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
Device code
51 324
6789
VS- 10 T T S 08 S TRL PbF
Document Number: 95046 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 31-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
D2PAK
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC outline TO-263AB
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004 B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c) c1
Base
Metal
Plating
Conforms to JEDEC outline D2PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010 AB
MM
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
Disclaimer
Legal Disclaimer Notice
Vishay
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
