T4-LDS-0286-1, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 1 of 6
1N6461US – 1N6468US
Availa ble on
commercial
versions
Voidless Hermetically Sealed Unidirectional
Transient Voltage Suppressors
Qualified per MIL-PRF-19500/551
Qualified Levels:
JAN, JANTX, and
JANTXV
DESCRIPTION
This surface mount series of 500 watt voidless hermetically sealed uni direc t ion al T r ansient
Voltage Suppressors (TVS) are military qualified to MIL-PRF-195 00/5 51 and ar e id eal for
high-reliability applications where a failure cannot be tolerated. Working peak “standoff”
voltages are available from 5.0 to 51.6 volts. They are very robust, using a hard glass casing
and internal Category 1 metallurgical bonds. These devices are also available in axial-leaded
packages for thru-hole mounting.
“B” SQ-MELF
Package
Also available in:
“B” Package
(axial –leaded)
1N6461 - 1N6468
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• Surface mount equivalent of JEDEC registered 1N6461 thru 1N6468 series.
• Available as 500 watt peak pulse power (PPP).
• Working peak “standoff” voltage (VWM) from 5.0 to 51.6 volt.
• High surge current and peak pulse power provides transient voltage protection for sensitive circuits.
• Triple-layer passivation.
• Internal “Category 1” metallurgical bonds.
• Voidless hermetically sealed glass package.
• JAN, JANTX, and JANTXV qualifications available per MIL-PRF-19500/551. Other screening in
reference to MIL-PRF-19500 i s also availa ble.
(See part nomenclature for all available options.)
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• Military and other high-reliabi lity applica tions.
• Extr emely rob ust constr u cti on.
• ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.
• Protection from secondary effects of lightning per select levels in IEC61000-4-5.
• Square-end-cap terminals for easy placement.
• Nonsensitive to ESD per MIL-STD-750 method 1020.
• Inherently radiation hard as described in Microsemi “MicroNote 050”.
MAXIMUM RATINGS @ 25 ºC
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-55 to +175
oC
Thermal Resi stan ce, Jun cti on to Endcap
RӨJEC
20
ºC/W
Forward Surge Current @ 8.3 ms half-sine
IFSM
80
A
Forward Voltage @ 1 Amp
VF
1.5
V
Peak Pulse Power @ 10/1000 µs PPP 500 W
Reverse Power Dissipation (1)
PR
2.5
W
Solder Temperature @ 10 s
260
oC
Notes: 1. Derate at 50 mW/oC (see figure 4).
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0286-1, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 2 of 6
1N6461US – 1N6468US
• CASE: Hermetically sealed voidless hard glass with tungs ten slugs.
• TERMINALS: Axial-leads are tin/lead over copper. RoHS compli ant matte-tin is available for commercial grade only.
• MARKING: Body paint and part number.
• POLARITY: Cathode band.
• TAPE & REEL option: Standard per EIA-296. Contact factory for quantities.
• WEIGHT: Approximately 750 milligrams.
• See Package Dimensions on last page.
JAN 1N6461 US e3
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
CDS (reference JANS)
Blank = commercial
JEDEC type number
See Electrical Characteristics
table
RoHS Compli ance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
MELF Package
SYMBOLS & DEFINITIONS
Symbol
Definition
αV(BR)
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in
temperature expressed in %/°C or mV/°C.
V(BR)
Breakdown Voltage: The voltage across the device at a specified current I(BR) in the breakdown region.
VWM
Rated working standoff voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage
that may be continuously applied over the standard operating temperature.
ID
Standby Current: The current through the device at rated stand-off voltage.
IPP
Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse
current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an
external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives.
VC Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (IPP) for a specified waveform.
PPP
Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The
impulse power is the maximum-rated value of the product of IPP and VC.
T4-LDS-0286-1, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 3 of 6
1N6461US – 1N6468US
TYPE
MINIMUM
BREAK
DOWN
VOLTAGE
V(BR)
@ I(BR)
BREAKDOWN
CURRENT
I (BR)
RATED
WORKING
STANDOFF
VOLTAGE
VWM
MAXIMUM
STANDBY
CURRENT
ID
@ VRWM
MAXIMUM
CLAMPING
VOLTAGE
VC
@ 10/1000 µs
MAXIMUM
PEAK IMPULSE
CURRENT
IPP
MAXIMUM
TEMP. COEF.
OF
α
V(BR)
@ 8/20
µs
@ 10/1000
µs
Volts
mA
V (pk)
µA
V (pk)
A (pk)
A (pk)
%/oC
1N6461US
5.6
25
5
3000
9.0
315
56
-0.03, +0.045
1N6462US 6.5 20 6 2500 11.0 258 46 +0.060
1N6463US
13.6
5
12
500
22.6
125
22
+0.085
1N6464US
16.4
5
15
500
26.5
107
19
+0.085
1N6465US 27.0 2 24 50 41.4 69 12 +0.096
1N6466US
33.0
1
30.5
3
47.5
63
11
+0.098
1N6467US
43.7
1
40.3
2
63.5
45
8
+0.101
1N6468US
54.0
1
51.6
2
78.5
35
6
+0.103
T4-LDS-0286-1, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 4 of 6
1N6461US – 1N6468US
Pulse Time (tp)
FIGURE 1
Peak Pulse Power vs Pulse Time
Time (t) in Milliseconds
FIGURE 2
10/1000 µs Current Impulse Waveform
Reverse Peak Pulse Power (PPP) in kW
IPP
– Peak Pulse Current - % I
PP
T4-LDS-0286-1, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 5 of 6
1N6461US – 1N6468US
Time (t) in Milliseconds
FIGURE 3
8/20 µs Current Impulse Waveform
T – Temperature - °C
FIGURE 4
Derating Curve
I
PP
– Peak Pulse Current - % I
PP
Peak Pulse Power (P
PP
), Current (I
PP
),
And DC Power in Percen t of 25°C Ratin g
T4-LDS-0286-1, Rev. 1 (4/24/13) ©2013 Microsemi Corporation Page 6 of 6
1N6461US – 1N6468US
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for information only.
3. Referenc ing to dim ens ion S, minimum clearance of glass body to mounting surface on all orientati ons .
4. Dimensions are pre-solider dip.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
Inch
Millimeters
Min
Max
Min
Max
BD
0.137
0.148
3.48
3.76
BL
0.200
0.225
5.08
5.72
ECT 0.019 0.028 0.48 0.71
S
0.003
---
0.08
---
INCH
MILLIMETERS
A
0.288
7.32
B
0.070
1.78
C
0.155
3.94
Note: If mounting requires adhesive
separate from the solder, an additional
0.080 inch diameter contact may be placed
in the center between the pads
as an optional spot for cement.
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Microsemi:
1N6467US JANTX1N6463US JANTXV1N6468US JAN1N6468US 1N6462US 1N6465US JAN1N6465US
JANTXV1N6466US JANTXV1N6464US JAN1N6462US JAN1N6466US JAN1N6463US JANTX1N6464US
1N6466US 1N6468US JANTX1N6461US JANTX1N6465US JANTX1N6462US JANTXV1N6463US 1N6463US
JANTX1N6468US JANTX1N6467US JAN1N6464US JAN1N6467US JANTXV1N6461US JANTXV1N6465US
1N6464US JANTX1N6466US JANTXV1N6467US JANTXV1N6462US JAN1N6461US 1N6461US 1N6461US/TR