ATF-36077
2–18 GHz Ultra Low Noise Pseudomorphic HEMT
Data Sheet
Features
• PHEMT Technology
• Ultra-Low Noise Figure:
0.5 dB Typical at 12 GHz
0.3 dB Typical at 4 GHz
• High Associated Gain:
12 dB Typical at 12 GHz
17 dB Typical at 4 GHz
• Low Parasitic Ceramic Microstrip Package
• Tape-and-Reel Packing Option Available
Applications
• 12 GHz DBS LNB (Low Noise Block)
• 4 GHz TVRO LNB (Low Noise Block)
• Ultra-Sensitive Low Noise Ampliers
Pin Conguration
77 Package
ATF-36077 fig 1
NOISE FIGURE (dB)
0
0
FREQUENCY (GHz)
8 16 20
1.2
0.8
0.4
412
Ga
ASSOCIATED GAIN (dB)
NF
10
15
20
25
[1]
Note: 1. See Noise Parameter Table.
Description
Avago Technologies' ATF-36077 is an ultra-low-noise Pseudo-
morphic High Electron Mobility Transistor (PHEMT), pack-
aged in a low parasitic, surface-mountable ceramic package.
Properly matched, this transistor will provide typical 12
GHz noise gures of 0.5 dB, or typical 4 GHz noise gures
of 0.3 dB. Additionally, the ATF-36077 has very low noise
resistance, reducing the sensitivity of noise performance to
variations in input impedance match, making the design of
broadband low noise ampliers much easier. The premium
sensitivity of the ATF-36077 makes this device the ideal
choice for use in the rst stage of extremely low noise
cascades. The repeatable performance and consistency
make it appropriate for use in Ku-band Direct Broad-cast
Satellite (DBS) Television systems, C-band Television Receive
Only (TVRO) LNAs, or other low noise ampliers operating
in the 2-18 GHz frequency range.
This GaAs PHEMT device has a nominal 0.2 micron gate
length with a total gate periphery (width) of 200 microns.
Proven gold based metalization systems and nitride pas-
sivation assure rugged, reliable devices.
Figure 1. ATF-36077 Optimum Noise Figure and Associated
Gain vs. Frequency for VDS = 1.5 V, ID = 10 mA.
1
GATE
3
DRAIN
2 SOURCE
4 SOURCE
360
2
ATF-36077 Electrical Specications,
TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted).
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NF Noise Figure[1] f = 12.0 GHz dB 0.5 0.6
GA Gain at NF[1] f = 12.0 GHz dB 11.0 12.0
gm Transconductance VDS = 1.5 V, V
GS = 0 V mS 50 55
Idss Saturated Drain Current VDS = 1.5 V, V
GS = 0 V mA 15 25 45
Vp 10 % Pinch-o Voltage VDS = 1.5 V, IDS = 10% of Idss V -1.0 -0.35 -0.15
Note:
1. Measured in a xed tuned environment with Γ source = 0.54 at 156°; Γ load = 0.48 at 167°.
ATF-36077 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum[1]
VDS Drain – Source Voltage V +3
V
GS Gate – Source Voltage V -3
VGD Gate-Drain Voltage V -3.5
ID Drain Current mA Idss
PT Total Power Dissipation[3] mW 180
Pin max RF Input Power dBm +10
Tch Channel Temperature °C 150
TSTG Storage Temperature °C -65 to 150
ATF-36077 Characterization Information,
TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted).
Symbol Parameters and Test Conditions Units Typ.
NF Noise Figure (Tuned Circuit) f = 4 GHz dB 0.3[2]
f = 12 GHz dB 0.5
GA Gain at Noise Figure (Tuned Circuit) f = 4 GHz dB 17
f = 12 GHz dB 12
S12 o Reverse Isolation f = 12 GHz, VDS = 1.5 V, V
GS = -2 V dB 14
P1dB Output Power at 1 dB Gain Compression f = 4 GHz dBm 5
f = 12 GHz dBm 5
V
GS 10 mA Gate to Source Voltage for IDS = 10 mA VDS = 1.5 V V -0.2
Note:
2. See noise parameter table.
Thermal Resistance[2,3]: θch-c = 60°C/W
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Measured at Pdiss = 15 mW and Tch = 100°C.
3. Derate at 16.7 mW/°C for TC > 139°C.
3
ATF-36077 Typical Scattering Parameters,
Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 10 mA
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
1.0 0.99 -17 14.00 5.010 163 -36.08 0.016 78 0.60 -14
2.0 0.97 -33 13.81 4.904 147 -30.33 0.030 66 0.59 -28
3.0 0.94 -49 13.53 4.745 132 -27.25 0.043 54 0.57 -41
4.0 0.90 -65 13.17 4.556 116 -25.32 0.054 43 0.55 -54
5.0 0.86 -79 12.78 4.357 102 -24.04 0.063 33 0.53 -66
6.0 0.82 -93 12.39 4.162 88 -23.17 0.069 24 0.50 -78
7.0 0.78 -107 12.00 3.981 75 -22.58 0.074 16 0.48 -89
8.0 0.75 -120 11.64 3.820 62 -22.17 0.078 8 0.46 -99
9.0 0.72 -133 11.32 3.682 49 -21.90 0.080 1 0.44 -109
10.0 0.69 -146 11.04 3.566 37 -21.71 0.082 -6 0.42 -119
11.0 0.66 -159 10.81 3.473 25 -21.57 0.083 -13 0.40 -129
12.0 0.63 -172 10.63 3.401 13 -21.44 0.085 -19 0.38 -139
13.0 0.61 175 10.50 3.349 1 -21.32 0.086 -25 0.37 -149
14.0 0.60 161 10.41 3.315 -12 -21.19 0.087 -32 0.35 -160
15.0 0.58 147 10.36 3.296 -24 -21.04 0.089 -39 0.33 -171
16.0 0.57 131 10.34 3.289 -37 -20.87 0.091 -47 0.31 177
17.0 0.56 114 10.34 3.289 -50 -20.69 0.092 -55 0.29 164
18.0 0.57 97 10.35 3.291 -64 -20.53 0.094 -65 0.26 148
ATF-36077 Typical “O ” Scattering Parameters,
Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 0 mA, V
GS = -2 V
Freq. S11 S21 S21 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
11.0 0.96 -139 -14.2 0.19 -43 -14.2 0.19 -43 0.97 -125
12.0 0.95 -152 -14.0 0.20 -56 -14.0 0.20 -56 0.97 -137
13.0 0.94 -166 -13.8 0.20 -69 -13.8 0.20 -68 0.96 -149
ATF-36077 Typical Noise Parameters,
Common Source, ZO = 50 Ω, VDS = 1.5 V, ID = 10 mA
Freq. Fmin[1] Γopt Rn/Zo
GHz dB Mag. Ang. -
1 0.30 0.95 12 0.40
2 0.30 0.90 25 0.20
4 0.30 0.81 51 0.17
6 0.30 0.73 76 0.13
8 0.37 0.66 102 0.09
10 0.44 0.60 129 0.05
12 0.50 0.54 156 0.03
14 0.56 0.48 -174 0.02
16 0.61 0.43 -139 0.05
18 0.65 0.39 -100 0.09
Note:
1. The Fmin values at 2,4, and 6 GHz have been adjusted to reect expected circuit losses that
will be encountered when matching to the optimum reection coecient (Γopt) at these
frequencies. The theoretical Fmin values for these frequencies are: 0.10 dB at 2 GHz, 0.20 dB
at 4 GHz, and 0.29 dB at 6 GHz. Noise parameters are derived from associated s parameters,
packaged device measurements at 12 GHz, and die level measurements from 6 to 18 GHz.
77 Package Dimensions Part Number Ordering Information
Part Number No. of Devices Container
ATF-36077-TRl[2] 1000 7" Reel
ATF-36077-STR 100 strip
Note:
2. For more information, see “Tape and Reel Packaging for Semiconduc-
tor Devices,” in “Communications Components” Designer‘s Catalog.
Figure 2. Maximum Available Gain, Maximum Stable Gain and
Insertion Power Gain vs. Frequency. VDS = 1.5 V, ID = 10 mA.
GAIN (dB)
0
25
0
FREQUENCY (GHz)
8 16 20
20
15
10
5
412
ATF-36077 fig 2
S21
MSG MAG
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries.
Data subject to change. Copyright © 2005-2008 Avago Technologies Limited. All rights reserved. Obsoletes 5965-8726E
AV02-1222EN - April 29, 2008
1.02
(0.040)
.51
(0.020)
1.78
(0.070)
1.22
(0.048)
.53
(0.021)
5.28
(0.208) .10
(0.004)
TYPICAL DIMENSIONS ARE IN MILLIMETERS (INCHES).
4
2
1 3
GATE DRAIN
SOURCE
SOURCE
1.75
(0.069)
360