3469674 FAIRCHILD SEMICONDUCTOR a4 DEM 3469474 0027934 2 i amie entninscapmen en ee} FAIRCHILD a | A Schiumberger Company Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. Low Rpsjon) IRF510-513 T-3T-OF MTP4N08/4N10 TT 39-V N-Channel Power MOSFETs, 5.5 A, 60-100 V Power And Discrete Division TO-220AB Vas Rated at +20 V isco 10 @ Silicon Gate for Fast Switching Speeds IRF510 Ipss, Vogien), Specified at Elevated Temperature IRFS14 Rugged IRF512 @ Low Drive Requirements IRF543 @ Ease of Paralfeling MTP4No8 MTP4N10 Maximum Ratings Rating IRF510/512 Rating Rating Symbol Characteristic MTP4N10 MTP4N08 IRF511/513 Unit Voss Drain to Source Voltage! 400 80 60 V VpGR Drain to Gate Voltage! 400 80 60 v Reg = 20 kQ Ves Gate to Source Voltage +20 +20 20 Vv Ty, Tstg | Operating Junction and ~55 to +150 -55 to +150 -55 to +150 C Storage Temperatures Te Maximum Lead Temperature 275 275 275 C for Soldering Purposes, 1/8" From Case for 5 s Maximum On-State Characteristics IRF510/511 tRF512/513 MTP4N08/10 Rpsten) Static Drain-to-Source 0.60 0.80 0.80 2 On Resistance Ib Drain Current A Continuous at To = 25C 4.0 3.5 5.0 Continuous at Tce = 100C 2.5 2.0 3.5 Pulsed 16 14 14 Maximum Thermal Characteristics Rec Therma! Resistance, 6.4 6.4 2.5 C/W Junction to Case Raga Thermal Resistance, 80 80 80 C/W Junction to Ambient Pp Total Power Dissipation 20 20 50 Ww at To = 26C Notes For information concerning connection dtagram and package outitne, refer to Section 7. 2-147 IRF510-513 MTP4N08/4N10 7-49-09 T3FU Electrical Characteristics (To = 25C unless otherwise noted) | | Unit Symbol! Characteristic Min Max Test Conditions Off Characteristics Vieryoss | Drain Source Breakdown Voltage! Vv Veg =0 V, Ip = 250 WA IRF510/512/MTP4N10 100 MTP4N08 80 IRF511/513 60 loss Zero Gate Voltage Drain Current 250 BA Vos = Rated Voss, Vas = 0 V 1000 LA Vps = 0.8 x Rated Vpss, Vag =0 V, To = 125C lass Gate-Body Leakage Current +500 nA Ves = +20 V, Vos =0 V On Characteristics Vesith) Gate Threshold Voltage Vv IRF510-513 2.0 4.0 Ip = 250 wA, Vos = Vas MTP4N08/10 2.0 45 Ip =1 MA, Vps = Ves Roson) | Static Drain-Source On-Resistance* Q Veg = 10 V, Ip =2.0 A IRF510/511 0.60 IRF512/513/MTP4N08/4N10 0.80 ; Vpston) | Drain-Source On-Voitage 48 Veg = 10 V; Ip=4.0 A ; MTP4N08/4N10 3.2 V Veg = 10 Vi Ip =2.0 A; To = 100C Os Forward Transconductance 1.0 S$ (8) Vps = 10 V, Ip =20 A Dynamic Characteristics Ciss Input Capacitance 200 pF Vps = 25 V, Vag =0 V Coss Output Capacitance 4100 pF f=1.0 MHz Ciss Reverse Transfer Capacitance 30 pF Switching Characteristics (To = 25C, Figures 11, 12)3 tajon) Turn-On Delay Time 20 ns Vpp = 50 V, Ip=2.0 A t Rise Time 25 ns Ros 6 Reen = 50 2 tarot Turn-Off Delay Time 26 ns ' tt Fall Time 20 ns Qg Total Gate Charge 7.5 nc Veg =10 V, Ip=8.0 A Vpp = 40 V 2-148 3469674 FAIRCHILD SEMICONDUCTOR au pe 3469674 Ooe7dab 1 i IRF510-513 Te 39~9% MTP4NO8/4N10 ~_- 50.0), Tr 3d-// Electrical Characteristics (Cont.) (Tc = 25C unless otherwise noted) Symbol Characteristic | Typ Max | Unit | Test Conditions Source-Drain Diode Characteristics Vsp Diode Forward Voltage Vv IRF510/511 2.5 Ig = 4.0 A; Vag =0 V IRF512/513 2.0 Ig =3.5 A; Veg =0 V te Reverse Recovery Time 230 ns lg = 4.0 A; dig/dt = 25 A/S Notes 4. Ty = +25C to + 150C 2. Pulse test: Pulse width <80 ys, Duty cycle <1% Typical Performance Curves Figure 1 Output Characteristics 10 12V 8 T= 808 PULSE TEST a {pDRAIN CURRENTA a n 6v 0 2 4 6 8 10 VosDRAIN TO SOURCE VOLTAGEV PCIGSI0F Figure 3 Transfer Characteristics 7 6 Ip>~DRAIN CURRENTA 3 4 5 6 7 8 9 10 VosGATE TO SOURCE VOLTAGE--V Patios 3. Switching time measurements performed on LEM TR-58 test equipment Figure 2 Static Drain to Source Resistance vs Drain Current I Vag=10 rahe J 4.25 7 LY 8 Ta25C | bene 2 & RosionySTATIC DAAIN TO SOURCE RESISTANCE2 2 a Q 1 2 3 4 5 6 ip DRAIN CURRENTA Pet oer Figure 4 Temperature Variation of Gate to Source Threshold Voltage NORMALIZED GATE THRESHOLD VOLTAGE -0 a 50 100 160 T,-JUNCTION TEMPERATUREC ecognF 2-149 negra re) oF m t 3469674 FAIRCHILD SEMLUONDUCIOR B4 DER s4b9674 0027937 4 84D 27937 D IRF510-513 7-39-09 MTP4N08/4N10 T!RY Typical Performance Curves (Cont.) Figure 5 Capacitance vs Drain to Source Voltage 103 w a di 2 8 a E 10 9 < a 4 4 2 Veg =0 V t=4 10t 10 2 s 101 2 10? VpgDRAIN TO SOURCE VOLTAGEV PON Figure 7 Forward Biased Safe Operating Area for MTP4N08/4N10 102 i ~ 100 z oc c > o z << & 10 [ 2 40-1 10 10! 102 YosDRAIN TO SOURCE VOLTAGEV Porir Figure 9 Forward Biased Safe Operating Area for IRF510-513 102 AREA 1S LIMITED Rosteny 10 ps 108 100 10 IpnDRAIN CURRENTA 10 ms: 100 101 0? 103 VosORAIN TO SOURCE VOLTAGEV PCIZ0EEF Figure 6 Gate to Source Voltage vs Total Gate Charge 20 VosGATE TO SOURCE VOLTAGEV o 2 4 6 8 10 Q,TOTAL GATE CHARGEnc PC11020F Figure 8 Transient Thermal Resistance vs Time for MTP4N08/4N10 101 Pe a oan + _~TAANSIENT THERMAL RESISTANCEC/W 3 Zee duty Pctor, D = 2 D curves epply to train of heating pulses Tawa Te Pu Zane 10-* 4 108 410! 4 408 * 103 4 404 tTiIMEms Pos asir Figure 10 Transient Thermal Resistance vs Time for IRF510-513 40% 10 SAT wot th 10-1 ~t Duty Factar, D = & D curves apply to train of heating pulses Tyan = To + Pu * Zoic 2Za3 TRANSIENT THERMAL RESISTANCEC/W 10-2 10-2 10-1 10 tot 102 108 tTIMEms PCIZ07eF 2-150 Se ame meee seein yh yah 3469674 FAIRCHILD SEMICONDUCTOR By pe W sunsezy oo274934 5 T IRF510-513 MTP4NO8/4Ni0 ~ 39-07 TT 39-4 Typical Electrical Characteristics Figure 11 Switching Test Circuit Figure 12 Switching Waveforms Vin PULSE GENERATOR OUTPUT, Vout Voo RL Vout INVERTED DUT L > 3 Res INPUT, Vin a fo 10% PULSE WIDTH CRORE 2-151