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The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
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Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
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Remember to give due consideration to safety when making your circuit designs, with appropriate
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Notes regar ding these materials
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1N5223B through 1N5258B
Silicon Epitaxial Planar Zener Diodes for Voltage Regulation
ADE-208-137B (Z)
Rev.2
Dec. 2001
Features
Glass package DO-35 structure ensures high reliability.
Wide spectrum from 2.7 V through 36 V of zener voltage provide flexible application.
Ordering Information
Type No. Cathode band Mark Package Code
1N5223B through
1N5258B
Black Type No. DO-35
Pin Arrangement
1. Cathode
2. Anode
Cathode band
Type No.
12
1N5223B through 1N5258B
Rev.2, Dec. 2001, page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Power dissipation Pd 500 mW
Surge power dissipation Pd(surge) *1 10 W
Lead temperature TL *2 230 °C
Junction temperature Tj *3 200 °C
Storage temperature Tstg –65 to +200 °C
Notes: 1. Non-recurrent square wave, pw = 8.3 ms, Tj = 55°C, Tj is prior to surge.
2. Less than 1/16" from the case for 10 seconds.
3. By standard printed board, see fig 2.
Electrical Characteristics
(Ta = 25°C)
V
Z (V) IR (µ
µµ
µA) ZZT (
) ZZK (
) γ
γγ
γZ (%
%%
%/°
°°
°C) *1 V
F*2 (V)
Test
Condition
Test
Condition
Test
Condition
Test
Condition
I
Z (mA) Max VR (V) Max IZT (mA) Max IZK (mA) Max Max
1N5223B 2.7 ± 5 (%) 20 75 1.0 30 20 1300 0.25 -0.08 1.1
1N5224B 2.8 ± 5 (%) 20 75 1.0 30 20 1400 0.25 -0.08 1.1
1N5225B 3.0 ± 5 (%) 20 50 1.0 29 20 1600 0.25 -0.075 1.1
1N5226B 3.3 ± 5 (%) 20 25 1.0 28 20 1600 0.25 -0.07 1.1
1N5227B 3.6 ± 5 (%) 20 15 1.0 24 20 1700 0.25 -0.065 1.1
1N5228B 3.9 ± 5 (%) 20 10 1.0 23 20 1900 0.25 -0.06 1.1
1N5229B 4.3 ± 5 (%) 20 5 1.0 22 20 2000 0.25 ±0.055 1.1
1N5230B 4.7 ± 5 (%) 20 5 2.0 19 20 1900 0.25 ±0.03 1.1
1N5231B 5.1 ± 5 (%) 20 5 2.0 17 20 1600 0.25 ±0.03 1.1
1N5232B 5.6 ± 5 (%) 20 5 3.0 11 20 1600 0.25 +0.038 1.1
1N5233B 6.0 ± 5 (%) 20 5 3.5 7 20 1600 0.25 +0.038 1.1
1N5234B 6.2 ± 5 (%) 20 5 4.0 7 20 1000 0.25 +0.045 1.1
1N5235B 6.8 ± 5 (%) 20 3 5.0 5 20 750 0.25 +0.05 1.1
1N5236B 7.5 ± 5 (%) 20 3 6.0 6 20 500 0.25 +0.058 1.1
1N5237B 8.2 ± 5 (%) 20 3 6.5 8 20 500 0.25 +0.062 1.1
1N5238B 8.7 ± 5 (%) 20 3 6.5 8 20 600 0.25 +0.065 1.1
Notes: 1. 1N5223 to 1N5242: IZ = 7.5 mA, 1N5243 to 1N5258: IZ = IZ,, Ta = 25°C to 125°C
2. Tested with DC, IF = 200 mA
1N5223B through 1N5258B
Rev.2,Dec. 2001, page 3 of 7
Electrical Characteristics (cont)
(Ta = 25°C)
V
Z (V) IR (µ
µµ
µA) ZZT (
) ZZK (
) γ
γγ
γZ (%
%%
%/°
°°
°C) *1 V
F*2 (V)
Test
Condition
Test
Condition
Test
Condition
Test
Condition
I
Z (mA) Max VR (V) Max IZT (mA) Max IZK (mA) Max Max
1N5239B 9.1 ± 5 (%) 20 3 7.5 10 20 600 0.25 +0.068 1.1
1N5240B 10 ± 5 (%) 20 3 8.0 17 20 600 0.25 +0.075 1.1
1N5241B 11 ± 5 (%) 20 2 8.4 22 20 600 0.25 +0.076 1.1
1N5242B 12 ± 5 (%) 20 1 9.1 30 20 600 0.25 +0.077 1.1
1N5243B 13 ± 5 (%) 9.5 0.5 9.9 13 9.5 600 0.25 +0.079 1.1
1N5244B 14 ± 5 (%) 9.0 0.1 10 15 9.0 600 0.25 +0.082 1.1
1N5245B 15 ± 5 (%) 8.5 0.1 11 16 8.5 600 0.25 +0.082 1.1
1N5246B 16 ± 5 (%) 7.8 0.1 12 17 7.8 600 0.25 +0.083 1.1
1N5247B 17 ± 5 (%) 7.4 0.1 13 19 7.4 600 0.25 +0.084 1.1
1N5248B 18 ± 5 (%) 7.0 0.1 14 21 7.0 600 0.25 +0.085 1.1
1N5249B 19 ± 5 (%) 6.6 0.1 14 23 6.6 600 0.25 +0.086 1.1
1N5250B 20 ± 5 (%) 6.2 0.1 15 25 6.2 600 0.25 +0.086 1.1
1N5251B 22 ± 5 (%) 5.6 0.1 17 29 5.6 600 0.25 +0.087 1.1
1N5252B 24 ± 5 (%) 5.2 0.1 18 33 5.2 600 0.25 +0.088 1.1
1N5253B 25 ± 5 (%) 5.0 0.1 19 35 5.0 600 0.25 +0.089 1.1
1N5254B 27 ± 5 (%) 4.6 0.1 21 41 4.6 600 0.25 +0.090 1.1
1N5255B 28 ± 5 (%) 4.5 0.1 21 44 4.5 600 0.25 +0.091 1.1
1N5256B 30 ± 5 (%) 4.2 0.1 23 49 4.2 600 0.25 +0.091 1.1
1N5257B 33 ± 5 (%) 3.8 0.1 25 58 3.8 700 0.25 +0.092 1.1
1N5258B 36 ± 5 (%) 3.4 0.1 27 70 3.4 700 0.25 +0.093 1.1
Notes: 1. 1N5223 to 1N5242: IZ = 7.5 mA, 1N5243 to 1N5258: IZ = IZ,, Ta = 25°C to 125°C
2. Tested with DC, IF = 200 mA
1N5223B through 1N5258B
Rev.2, Dec. 2001, page 4 of 7
Main Characteristic
25
20
15
10
5
0
4 8 12 16 20 24 28 32 4036
1N5223B 1N5225B
1N5227B
1N5229B
1N5231B
1N5233B
1N5235B
1N5237B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5258B
1N5257B
1N5256B
1N5254B
1N5255B
1N5253B
1N5252B
1N5251B
1N5250B
1N5246B
1N5247B
1N5248B
1N5249B
500
400
300
200
100
20015010050
0
Power Dissipation Pd (mW)
0
2.5mm
3mm
Printed circuit board
100 180 1.6t mm
Material: paper phenol
××
5mm
Ambient Temperature Ta (°C)
Fig.2 Power Dissipation vs. Ambient Temperature
Zener Voltage V
Z
(V)
Fig.1 Zener current vs. Zener voltage
Zener Current I
Z
(mA)
1N5223B through 1N5258B
Rev.2,Dec. 2001, page 5 of 7
Ammo Pack Taping (TA TYPE)
gf
a
b
c
d
e
f
g
h
| L1L2 |
JEITA CODE
64.0 ± 1.5
52.4 ± 1.2
6.0 ± 0.5
± 0.5
3.2 min
5.00 ± 0.38
± 1.0
1.0max
1.0max
TA21 (R)
h
White tape
Colored tape b/2 b/2
d
d
e
c
L2
L1
b
a
Unit: mm
Taping appearance
( ):Reference only.
Country of Origin
JapanJAPAN
(
'MADE IN JAPAN)
MalaysiaMALAYSIA
(
'MALAYSIA)
Lot No..
Quantity
Product Name
Management No.
(Year,Month and Weekly code)
Box
HITACHI
1N5223BTA
5000PCS
G90109G
MADE IN JAPAN
(75)
(255)
(80)
Unit: mm
W/C:9A3 LOT:G90109G
QTY:5000
JAPAN
'
INT.C:1N5223BTA
1N5223B through 1N5258B
Rev.2, Dec. 2001, page 6 of 7
Package Dimensions
Hitachi Code
JEDEC
JEITA
Mass
(reference value)
DO-35
Conforms
Conforms
0.13 g
26.0 Min 4.2 Max 26.0 Min
0.5
2.0
φ
φ
As of July, 2001
Unit: mm
1N5223B through 1N5258B
Rev.2,Dec. 2001, page 7 of 7
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
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For further information write to:
Colophon 5.0