To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. 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Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 1N5223B through 1N5258B Silicon Epitaxial Planar Zener Diodes for Voltage Regulation ADE-208-137B (Z) Rev.2 Dec. 2001 Features * Glass package DO-35 structure ensures high reliability. * Wide spectrum from 2.7 V through 36 V of zener voltage provide flexible application. Ordering Information Type No. Cathode band Mark Package Code 1N5223B through 1N5258B Black Type No. DO-35 Pin Arrangement 2 1 Type No. Cathode band 1. Cathode 2. Anode 1N5223B through 1N5258B Absolute Maximum Ratings (Ta = 25C) Item Symbol Power dissipation Pd 1 Surge power dissipation Pd(surge) * Lead temperature Value Unit 500 mW 10 W 2 230 C 3 200 C -65 to +200 C TL * Junction temperature Tj * Storage temperature Tstg Notes: 1. Non-recurrent square wave, pw = 8.3 ms, Tj = 55C, Tj is prior to surge. 2. Less than 1/16" from the case for 10 seconds. 3. By standard printed board, see fig 2. Electrical Characteristics (Ta = 25C) IR ( A) VZ (V) Test Condition IZ (mA) ZZT ( ) Test Condition ZZK ( ) Test Condition Z (% %/C) * VF* (V) 1 2 Test Condition Max VR (V) Max IZT (mA) Max IZK (mA) Max Max 1N5223B 2.7 5 (%) 20 75 1.0 30 20 1300 0.25 -0.08 1.1 1N5224B 2.8 5 (%) 20 75 1.0 30 20 1400 0.25 -0.08 1.1 1N5225B 3.0 5 (%) 20 50 1.0 29 20 1600 0.25 -0.075 1.1 1N5226B 3.3 5 (%) 20 25 1.0 28 20 1600 0.25 -0.07 1.1 1N5227B 3.6 5 (%) 20 15 1.0 24 20 1700 0.25 -0.065 1.1 1N5228B 3.9 5 (%) 20 10 1.0 23 20 1900 0.25 -0.06 1.1 1N5229B 4.3 5 (%) 20 5 1.0 22 20 2000 0.25 0.055 1.1 1N5230B 4.7 5 (%) 20 5 2.0 19 20 1900 0.25 0.03 1.1 1N5231B 5.1 5 (%) 20 5 2.0 17 20 1600 0.25 0.03 1.1 1N5232B 5.6 5 (%) 20 5 3.0 11 20 1600 0.25 +0.038 1.1 1N5233B 6.0 5 (%) 20 5 3.5 7 20 1600 0.25 +0.038 1.1 1N5234B 6.2 5 (%) 20 5 4.0 7 20 1000 0.25 +0.045 1.1 1N5235B 6.8 5 (%) 20 3 5.0 5 20 750 0.25 +0.05 1.1 1N5236B 7.5 5 (%) 20 3 6.0 6 20 500 0.25 +0.058 1.1 1N5237B 8.2 5 (%) 20 3 6.5 8 20 500 0.25 +0.062 1.1 1N5238B 8.7 5 (%) 20 3 6.5 8 20 600 0.25 +0.065 1.1 Notes: 1. 1N5223 to 1N5242: IZ = 7.5 mA, 1N5243 to 1N5258: IZ = IZ,, Ta = 25C to 125C 2. Tested with DC, IF = 200 mA Rev.2, Dec. 2001, page 2 of 7 1N5223B through 1N5258B Electrical Characteristics (cont) (Ta = 25C) IR ( A) VZ (V) Test Condition IZ (mA) ZZT ( ) Test Condition ZZK ( ) Test Condition Z (% %/C) * VF* (V) 1 2 Test Condition Max VR (V) Max IZT (mA) Max IZK (mA) Max Max 1N5239B 9.1 5 (%) 20 3 7.5 10 20 600 0.25 +0.068 1.1 1N5240B 10 5 (%) 20 3 8.0 17 20 600 0.25 +0.075 1.1 1N5241B 11 5 (%) 20 2 8.4 22 20 600 0.25 +0.076 1.1 1N5242B 12 5 (%) 20 1 9.1 30 20 600 0.25 +0.077 1.1 1N5243B 13 5 (%) 9.5 0.5 9.9 13 9.5 600 0.25 +0.079 1.1 1N5244B 14 5 (%) 9.0 0.1 10 15 9.0 600 0.25 +0.082 1.1 1N5245B 15 5 (%) 8.5 0.1 11 16 8.5 600 0.25 +0.082 1.1 1N5246B 16 5 (%) 7.8 0.1 12 17 7.8 600 0.25 +0.083 1.1 1N5247B 17 5 (%) 7.4 0.1 13 19 7.4 600 0.25 +0.084 1.1 1N5248B 18 5 (%) 7.0 0.1 14 21 7.0 600 0.25 +0.085 1.1 1N5249B 19 5 (%) 6.6 0.1 14 23 6.6 600 0.25 +0.086 1.1 1N5250B 20 5 (%) 6.2 0.1 15 25 6.2 600 0.25 +0.086 1.1 1N5251B 22 5 (%) 5.6 0.1 17 29 5.6 600 0.25 +0.087 1.1 1N5252B 24 5 (%) 5.2 0.1 18 33 5.2 600 0.25 +0.088 1.1 1N5253B 25 5 (%) 5.0 0.1 19 35 5.0 600 0.25 +0.089 1.1 1N5254B 27 5 (%) 4.6 0.1 21 41 4.6 600 0.25 +0.090 1.1 1N5255B 28 5 (%) 4.5 0.1 21 44 4.5 600 0.25 +0.091 1.1 1N5256B 30 5 (%) 4.2 0.1 23 49 4.2 600 0.25 +0.091 1.1 1N5257B 33 5 (%) 3.8 0.1 25 58 3.8 700 0.25 +0.092 1.1 1N5258B 36 5 (%) 3.4 0.1 27 70 3.4 700 0.25 +0.093 1.1 Notes: 1. 1N5223 to 1N5242: IZ = 7.5 mA, 1N5243 to 1N5258: IZ = IZ,, Ta = 25C to 125C 2. Tested with DC, IF = 200 mA Rev.2,Dec. 2001, page 3 of 7 1N5223B through 1N5258B 1N5225B 1N5227B 1N5229B 1N5231B 1N5233B 1N5235B 1N5237B 1N5239B 1N5240B 1N5241B 1N5242B 1N5243B 1N5244B 1N5245B 1N5246B 1N5247B 1N5248B 1N5249B Main Characteristic 3B 1N52 1N525 1N5250B B 258 1N5 57B 1N52 56B 1N52 1N52 B 1N5252 B 1N5251 10 54B 15 1N5223B Zener Current IZ (mA) 20 55B 25 5 0 4 8 12 16 20 24 28 32 Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage Power Dissipation Pd (mW) 500 400 300 200 5mm 2.5mm 100 3mm Printed circuit board 100 x 180 x 1.6t mm Material: paper phenol 0 0 50 100 150 200 Ambient Temperature Ta (C) Fig.2 Power Dissipation vs. Ambient Temperature Rev.2, Dec. 2001, page 4 of 7 36 40 1N5223B through 1N5258B Ammo Pack Taping (TA TYPE) b/2 Unit: mm b/2 White tape f Colored tape 64.0 1.5 b 52.4 1.2 c 6.0 0.5 d 0.5 e 3.2 min f 5.00 0.38 g 1.0 h 1.0max | L1-L2 | 1.0max h g a d d e L1 L2 b a c JEITA CODE TA21 (R) Taping appearance Country of Origin JapanJAPAN ('MADE IN JAPAN) MalaysiaMALAYSIA ('MALAYSIA) Lot No.. Quantity Product Name Box Management No. (Year,Month and Weekly code) W/C:9A3 LOT:G90109G 1N5223BTA 5000PCS QTY:5000 MADE ING90109G JAPAN HITACHI (80) ' ( ):Reference only. (75) JAPAN INT.C:1N5223BTA (255) Unit: mm Rev.2,Dec. 2001, page 5 of 7 1N5223B through 1N5258B Package Dimensions As of July, 2001 Unit: mm 4.2 Max 26.0 Min 0.5 2.0 26.0 Min Hitachi Code JEDEC JEITA Mass (reference value) Rev.2, Dec. 2001, page 6 of 7 DO-35 Conforms Conforms 0.13 g 1N5223B through 1N5258B Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright (c) Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 5.0 Rev.2,Dec. 2001, page 7 of 7