DMP2066LDM
Document number: DS31464 Rev. 5 - 3
1 of 6
www.diodes.com
March 2018
© Diodes Incorporated
DMP2066LDM
NEW PROD UCT
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low RDS(ON):
40m @VGS = -4.5V
70m @VGS = -2.5V
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT26
Case Material Molded Plastic. UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (Approximate)
PPAP Capable (Note 4)
Ordering Information (Note 5)
Part Number
Packaging
DMP2066LDM-7
3000/Tape & Reel
DMP2066LDMQ-7
3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Date Code Key
Year
2008
2009
2010
2011
~
2018
2019
2020
Code
V
W
X
Y
~
F
G
H
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
SOT26
Top View
DMC = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: F = 2018)
M = Month (ex: 9 = September)
Top View
Internal Schematic
G
S
D
D
D
D
e3
NOT RECOMMENDED FOR NEW DESIGN
USE DMP2040UVT
DMP2066LDM
Document number: DS31464 Rev. 5 - 3
2 of 6
www.diodes.com
March 2018
© Diodes Incorporated
DMP2066LDM
NEW PROD UCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
12
V
Drain Current (Note 6) Continuous TA = +25°C
TA = +70°C
ID
-4.6
-3.7
A
Pulsed Drain Current (Note 7)
IDM
-18
A
Body-Diode Continuous Current (Note 6)
IS
2.0
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 6)
PD
1.25
W
Thermal Resistance, Junction to Ambient (Note 6); Steady-State
RJA
100
C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
-20
V
ID = -250A, VGS = 0V
Zero Gate Voltage Drain Current TJ = +25C
IDSS
-1
A
VDS = -20V, VGS = 0V
Gate-Body Leakage Current
IGSS
100
nA
VDS = 0V, VGS = 12V
Gate Threshold Voltage
VGS(TH)
-0.6
-0.96
-1.2
V
VDS = VGS, ID = -250A
On State Drain Current (Note 8)
ID(ON)
-15
A
VGS = -4.5V, VDS = -5V
Static Drain-Source On-Resistance (Note 8)
RDS(ON)
29
55
40
70
m
VGS = -4.5V, ID = -4.6A
VGS = -2.5V, ID = -3.8A
Forward Transconductance (Note 8)
gFS
9
S
VDS = -10V, ID = -4.6A
Diode Forward Voltage (Note 8)
VSD
-0.5
-0.72
-1.4
V
IS = -2.1A, VGS = 0V
Maximum Body-Diode Continuous Current (Note 6)
IS
-1.7
A
DYNAMIC PARAMETERS (Note 9)
Input Capacitance
Ciss

820
pF
VDS = -15V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss

200
pF
Reverse Transfer Capacitance
Crss

160
pF
Gate Resistance
RG

2.5

VDS = 0V, VGS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
QG

10.1

nC
VDS = -10V, VGS = -4.5V,
ID = -4.5A
Gate-Source Charge
QGS

1.5

Gate-Drain Charge
QGD

4.3

Turn-On Delay Time
tD(ON)

4.4

ns
VDS = -10V, VGS = -4.5V,
ID = -1A, RG = 6.0
Rise Time
tR

9.9

Turn-Off Delay Time
tD(OFF)

28.0

Fall Time
tF

23.4

Notes: 6. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t 10s.
7. Repetitive Rating, pulse width limited by junction temperature.
8. Test pulse width t = 300s.
9. Guaranteed by design. Not subject to production testing.
NOT RECOMMENDED FOR NEW DESIGN
USE DMP2040UVT
DMP2066LDM
Document number: DS31464 Rev. 5 - 3
3 of 6
www.diodes.com
March 2018
© Diodes Incorporated
DMP2066LDM
NEW PROD UCT
0
6
12
18
24
30
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Fig. 1 Typical Output Characteristic
-V , DRAIN-SOURCE VOLTAGE (V)
DS
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
V = -1.5V
GS
V = -2.0V
GS
V = -2.5V
GS
V = -3.0V
GS
V = -4.5V
GS
V = -10V
GS
-ID, DRAIN CURRENT (A)
0
4
8
12
16
20
0
0.5
1
1.5
2
2.5
3
3.5
4
Fig. 2 Typical Transfer Characteristic
-V , GATE-SOURCE VOLTAGE (V)
GS
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -5.0V
DS
-ID, DRAIN CURRENT (A)
0.01
0.1
1
0
6
12
18
24
30
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
-I , DRAIN-SOURCE CURRENT (A)
D
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
D
S
(
O
N
)
V =- 4.5V
GS
V = -10V
GS
V = -2.5V
GS
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
0.02
0.04
0.06
0.08
0
6
12
18
24
30
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
-I , DRAIN CURRENT (A)
D
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
D
S
(
O
N
)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -4.5V
GS
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
Fig. 5 Normalized On-Resistance vs. Ambient Temperature
-50
-25
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
0.6
0.8
1.0
1.2
1.4
1.6
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
N
O
R
M
A
L
I
Z
E
D
)
D
S
(
O
N
)
V = -4.5V
I = -5A
GS
D
V = -10V
I = -10A
GS
D
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
Fig. 6 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
0
0.4
0.8
1.2
1.6
2.0
2.4
V
,
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
G
S
(
T
H
)
I = -250µA
D
I = -1mA
D
-VGS(TH), GATE THRESHOLD VOLTAGE (V)
NOT RECOMMENDED FOR NEW DESIGN
USE DMP2040UVT
DMP2066LDM
Document number: DS31464 Rev. 5 - 3
4 of 6
www.diodes.com
March 2018
© Diodes Incorporated
DMP2066LDM
NEW PROD UCT
100
1,000
10,000
0 5 10 15 20
C , TOTAL CAPACITANCE (pF)
T
f = 1MHz
Ciss
Coss
Crss
Fig. 8 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
Fig. 9 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
r(t), TRANSIENT THERMAL RESISTANCE
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
12
R (t) = r(t) * R
R = 120
/W

JA JA
JA
P(pk) t1
t2
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
Fig. 7 Diode Forward Voltage vs. Current
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
1
1.2
-V , SOURCE-DRAIN VOLTAGE (V)
SD
I
,
S
O
U
R
C
E
C
U
R
R
E
N
T
(
A
)
S
T = 25°C
A
-IS, SOURCE CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
120°C/W
NOT RECOMMENDED FOR NEW DESIGN
USE DMP2040UVT
DMP2066LDM
Document number: DS31464 Rev. 5 - 3
5 of 6
www.diodes.com
March 2018
© Diodes Incorporated
DMP2066LDM
NEW PROD UCT
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT26
a1
D
e
E1 E
b
A2 A1
Seating Plane
L
c
a
e1
A3
SOT26
Dim
Min
Max
Typ
A1
0.013
0.10
0.05
A2
1.00
1.30
1.10
A3
0.70
0.80
0.75
b
0.35
0.50
0.38
c
0.10
0.20
0.15
D
2.90
3.10
3.00
e
-
-
0.95
e1
-
-
1.90
E
2.70
3.00
2.80
E1
1.50
1.70
1.60
L
0.35
0.55
0.40
a
-
-
a1
-
-
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT26
C1
Y1 G
X
Y
C
Dimensions
Value (in mm)
C
2.40
C1
0.95
G
1.60
X
0.55
Y
0.80
Y1
3.20
NOT RECOMMENDED FOR NEW DESIGN
USE DMP2040UVT
DMP2066LDM
Document number: DS31464 Rev. 5 - 3
6 of 6
www.diodes.com
March 2018
© Diodes Incorporated
DMP2066LDM
NEW PROD UCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
www.diodes.com
NOT RECOMMENDED FOR NEW DESIGN
USE DMP2040UVT