October 2009 Doc ID 13477 Rev 5 1/15
15
RHF43B
Rad-hard precision bipolar single operational amplifier
Features
High radiation immunity: 300 kRad TID at
high/low dose rate (ELDRS-free), tested
immunity of SEL /SEU at 125° C under
120 MeV/mg/cm² LET ions, 14 V supply
Output rail-to-rail
8 MHz gain bandwidth at 16 V
Stable for gain 5
Low input offset voltage: 100 µV typ
Supply current: 2.2 mA typ
Operating from 3 V to 16 V
Input bias current: 30 nA typ
ESD internal protection 2kV
Latch-up immunity: 200 mA
QML-V RHA, ELDRS-free qualified under smd
5962-06237.
Applications
Space probes and satellites
Defense systems
Scientific instrumentation
Nuclear systems
Description
The RHF43B is a precision bipolar operational
amplifier available in a ceramic 8-pin flat package
and in die form. ln addition to its low offset
voltage, rail-to-rail feature, wide supply voltage,
the RHF43B is designed for increased tolerance
to radiation. Its intrinsic ELDRS-free rad-hard
design allows this product to be used in space
environments and in applications operating in
harsh environments.
NC
+VCC
NC
OUT
-VCC
NC
IN -
IN +
Ceramic Flat-8
1
4
8
5
VDD
VCC
NC
+VCC
NC
OUT
-VCC
NC
IN -
IN +
Ceramic Flat-8
1
4
8
5
VDD
VCC
www.st.com
Absolute maximum ratings and operating conditions RHF43B
2/15 Doc ID 13477 Rev 5
1 Absolute maximum ratings and operating conditions
Table 1. Absolute maximum ratings (AMR)
Symbol Parameter Value Unit
VCC Supply voltage(1)
1. All values, except differential voltage are with respect to network terminal.
18
±9 V
Vid Differential input voltage (2)
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
±1.2 V
Vin Input voltage range(3)
3. The magnitude of input and output terminal must never exceed VCC + 0.3 V.
VDD-0.3 to 16 V
IIN Input current 45 mA
Tstg Storage temperature -65 to +150 °C
Rthja Thermal resistance junction to ambient(4)(5)
4. Short-circuits can cause excessive heating and destructive dissipation.
5. Rth are typical values.
125 °C/W
Rthjc Thermal resistance junction to case(4)(5) 40 °C/W
TjMaximum junction temperature 150 °C
ESD HBM: human body model(6)
6. Human body model: 100 pF discharged through a 1.5 kΩ resistor between two pins of the device, done for
all couples of pin combinations with other pins floating.
2kV
Latch-up immunity 200 mA
Lead temperature (soldering, 10 sec) 260 °C
Radiation related parameters
Dose
Low dose rate of 0.01 rad.sec-1
(up to Vcc = 16 V) 300 kRad
High dose rate of 50-300 rad.sec-1
(up to Vcc = 16 V) 300 kRad
HI Heavy ion latch-up (SEL) immune with heavy ions
(up to Vcc = 14 V) 68 MeV.cm-2.mg
Table 2. Operating conditions
Symbol Parameter Value Unit
VCC Supply voltage 3 to 16 V
Vicm Common mode input voltage range VDD to VCC V
Toper Operating free air temperature range -55 to +125 °C
RHF43B Electrical characteristics
Doc ID 13477 Rev 5 3/15
2 Electrical characteristics
Table 3. VCC = +16 V, VDD = 0 V, Vicm = VCC/2, RL connected to VCC/2
(unless otherwise specified)
Symbol Parameter Test conditions Min. Typ. Max. Unit
DC performance
Vio Offset voltage Tamb= 25° C
-55° C < Tamb < +125° C
100 300
500 µV
DVio Input offset voltage drift 1 μV/°C
Iib Input bias current
Vicm = VCC/2
Tamb= 25° C
-55° C < Tamb < +125° C
30 60
100
nA
DIib Input offset current temperature
drift Vicm = VCC/2 100 pA/°C
Iio
Input offset current
Vicm = VCC/2
Tamb= 25° C
-55° C < Tamb < +125° C
115
35
nA
Rin Differential input resistance
between in+ and in- Tamb= 25° C 0.16
MΩ
Input resistance between in+ (or
in-) and GND Tamb= 25° C 2000
Cin Differential input capacitance
between in+ and in- Tamb= 25° C 8
pF
Input capacitance between in+
(or in-) and GND Tamb= 25° C 2
CMR Common mode rejection ratio
0 < Vicm < 16 V
Tamb= 25° C
-55° C < Tamb < +125° C
72
72
110 dB
SVR Supply rejection ratio
3V < V
CC <16 V, Vicm =VCC/2
Tamb= 25° C
-55° C < Tamb < +125° C
90
80
120 dB
AVD Large signal voltage gain
RL = 10 kΩ, Vout= 0.5 V to
15.5 V,
0 < Vicm < 16 V
Tamb= 25° C
-55° C < Tamb < +125° C
74
60
85
dB
Electrical characteristics RHF43B
4/15 Doc ID 13477 Rev 5
VOH High level output voltage
RL=1kΩ connected to VCC/2
Tamb= 25° C
-55° C < Tamb < +125° C
15.7
15.6
15.8 V
RL=10kΩ connected to VCC/2
Tamb= 25° C
-55° C < Tamb < +125° C
15.9
15.8
15.96 V
VOL Low level output voltage
RL=1kΩ connected to VCC/2,
Tamb= 25° C
-55° C < Tamb < +125° C
0.1 0.2
0.3
V
RL=10kΩ connected to VCC/2,
Tamb= 25° C
-55° C < Tamb < +125° C
0.04 0.06
0.1
V
Iout
Output sink current
Vout = VCC
Tamb= 25° C
-55° C < Tamb < +125° C
20
15
30
mA
Output source current
Vout = VDD
Tamb= 25° C
-55° C < Tamb < +125° C
15
10
25
ICC Supply current
No load
Tamb= 25° C
-55° C < Tamb < +125° C
2.5 2.9
2.9
mA
AC performance
GBP Gain bandwidth product
RL=1kΩ, CL= 100 pF,
f= 100 kHz
Tamb= 25° C
-55° C < Tamb < +125° C
6
3.5
8MHz
FuUnity gain frequency RL=1kΩ, CL= 100 pF,
Tamb= 25° C 5MHz
φm Phase margin RL=1kΩ, CL= 100 pF, G = 5,
Tamb= 25° C 50 Degrees
SR Slew rate
RL=1kΩ, CL= 100 pF
Tamb= 25° C
-55° C < Tamb < +125° C
2
1.7
3V/μs
enEquivalent input noise voltage f = 1 kHz, Tamb= 25° C 7.5
inEquivalent input noise current f = 1 kHz, Tamb= 25° C 1
THD+enTotal harmonic distortion Vout = (VCC-1 V)/5, G = -5.1,
Vicm =V
CC/2, Tamb= 25° C 0.01 %
Table 3. VCC = +16 V, VDD = 0 V, Vicm = VCC/2, RL connected to VCC/2
(unless otherwise specified) (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit
nV
Hz
------------
p
A
Hz
------------
RHF43B Electrical characteristics
Doc ID 13477 Rev 5 5/15
Table 4. VCC = +3 V, VDD = 0 V, Vicm = VCC/2, RL connected to VCC/2
(unless otherwise specified)
Symbol Parameter Test conditions Min. Typ. Max. Unit
DC performance
Vio Offset voltage Tamb= 25° C
-55° C < Tamb < +125° C
100 300
500 µV
DVio Input offset voltage drift 1 μV/°C
Iib Input bias current
VCC = 4V, Vicm = VCC/2
Tamb= 25° C
-55° C < Tamb < +125° C
30 60
100
nA
DIib
Input offset current temperature
drift VCC = 4V, Vicm = VCC/2 100 pA/°C
Iio
Input offset current
(Vout =V
cc/2)
VCC = 4V, Vicm = VCC/2
Tamb= 25° C
-55° C < Tamb < +125° C
115
35
nA
Rin Differential input resistance
between in+ and in- Tamb= 25° C 0.16
MΩ
Input resistance between in+ (or
in-) and GND Tamb= 25° C 2000
Cin Differential input capacitance
between in+ and in- Tamb= 25° C 8
pF
Input capacitance between in+
(or in-) and GND Tamb= 25° C 2
CMR Common mode rejection ratio
0 < Vicm < 3 V
Tamb= 25° C
-55° C < Tamb < +125° C
72
72
90 dB
AVD Large signal voltage gain
RL = 10 kΩ, Vout= 0.5 V to 2.5 V
0 < Vicm < 3 V
Tamb= 25° C
-55° C < Tamb < +125° C
74
60
85 dB
VOH High level output voltage
RL = 1 kΩ, Vout= 0.5 V to 15.5 V
Tamb= 25° C
-55° C < Tamb < +125° C
2.9
2.8
2.95 V
RL=10kΩ connected to VCC/2
Tamb= 25° C
-55° C < Tamb < +125° C
2.94
2.9
2.98 V
VOL Low level output voltage
RL=1kΩ connected to VCC/2
Tamb= 25° C
-55° C < Tamb < +125° C
0.05 0.1
0.2
V
RL=10kΩ connected to VCC/2,
Tamb= 25° C
-55° C < Tamb < +125° C
0.02 0.06
0.1
V
Electrical characteristics RHF43B
6/15 Doc ID 13477 Rev 5
Iout
Output sink current
Vout = VCC
Tamb= 25° C
-55° C < Tamb < +125° C
20
15
30
mA
Output source current
Vout = VDD
Tamb= 25° C
-55° C < Tamb < +125° C
15
10
25
ICC Supply current per amplifier
No load
Tamb= 25° C
-55° C < Tamb < +125° C
2.2 2.6
2.6
mA
AC performance
GBP Gain bandwidth product
RL=1kΩ, CL= 100 pF,
f= 100 kHz
Tamb= 25° C
-55° C < Tamb < +125° C
6
3.5
7.5 MHz
FuUnity gain frequency RL=1kΩ, CL= 100 pF,
Tamb= 25° C 5MHz
φm Phase margin RL=1kΩ, CL= 100 pF, G = 5,
Tamb= 25° C 50 Degrees
SR Slew rate
RL=1kΩ, CL=100pF
Tamb= 25° C
-55° C < Tamb < +125° C
2
1.7
2.7 V/µs
enEquivalent input noise voltage f = 1 kHz, Tamb= 25° C 7
inEquivalent input noise current f = 1 kHz, Tamb= 25° C 0.8
THD+enTotal harmonic distortion Vout = (VCC-1 V)/5, G = -5.1,
Vicm =V
CC/2, Tamb= 25° C 0.01 %
Table 4. VCC = +3 V, VDD = 0 V, Vicm = VCC/2, RL connected to VCC/2
(unless otherwise specified) (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit
nV
Hz
------------
p
A
Hz
------------
RHF43B Electrical characteristics
Doc ID 13477 Rev 5 7/15
Figure 1. Input offset voltage distribution at
T=25°C
Figure 2. Input bias current vs. supply voltage
Figure 3. Input bias current vs. input common
mode voltage at VCC =3V
Figure 4. Supply current vs. input common
mode voltage in follower
configuration at VCC =3V
Figure 5. Supply current vs. input common
mode voltage in follower
configuration at VCC =16V
Figure 6. Supply current vs. supply voltage
at Vicm =V
CC/2
Electrical characteristics RHF43B
8/15 Doc ID 13477 Rev 5
Figure 7. Output current vs. supply voltage at
Vicm = VCC/2
Figure 8. Output current vs. output voltage at
VCC = 3 V
Figure 9. Output current vs. output voltage at
VCC = 16 V
Figure 10. Differential input voltage vs. output
voltage at VCC =3V
Figure 11. Differential input voltage vs. output
voltage at VCC = 16 V
Figure 12. Noise vs. frequency at VCC= 3 V and
VCC = 16 V
Vcc=16V, Vicm=2.5V, Tamb=25°C
Vcc=3V, Vicm=2.5V, Tamb=25°C
Input equivalent noise density (nV/VHz)
RHF43B Electrical characteristics
Doc ID 13477 Rev 5 9/15
Figure 13. Voltage gain and phase vs.
frequency at VCC =3V, V
icm =1.5V,
and T = 25° C
Figure 14. Voltage gain and phase vs.
frequency at VCC = 3 V and
Vicm = 2.5 V at T = 25° C
10
4
10
5
10
6
10
7
−5 0
−4 0−4 0
−3 0
−2 0−2 0
−1 0
00
10
2020
30
4040
50
180
150150
120120
−9 0−9 0
−6 0−6 0
−3 0−3 0
0
3030
6060
9090
120120
150150
180
Vcc=3V, Vicm=1.5V, G= −100
Rl=1kOhms, Cl=100pF, Vrl=Vcc/2
Tamb=25°C
Gain (dB)
Phase (°)
10
4
10
5
10
6
10
7
−5 0
−4 0−4 0
−3 0
−2 0−2 0
−1 0
00
10
2020
30
4040
50
180
150150
120120
−9 0−9 0
−6 0−6 0
−3 0−3 0
0
3030
6060
9090
120120
150150
180
Vcc=3V, Vicm=2.5V, G= −100
Rl=1kOhms, Cl=100pF, Vrl=Vcc/2
Tamb=25°C
Gain (dB)
Phase (°)
Figure 15. Voltage gain and phase vs.
frequency at VCC = 3 V and
Vicm = 0.5 V at T = 25° C
Figure 16. Voltage gain and phase vs.
frequency at VCC = 16 V and
Vicm = 8 V at T = 25° C
10
4
10
5
10
6
10
7
−5 0
−4 0−4 0
−3 0
−2 0−2 0
−1 0
00
10
2020
30
4040
50
−1 8 0
−1 5 0−1 5 0
−1 2 0−1 2 0
−9 0−9 0
−6 0−6 0
−3 0−3 0
0
3030
6060
9090
120120
150150
180
Vcc=3V, Vicm=0.5V, G= −100
Rl=1kOhms, Cl=100pF, Vrl=Vcc/2
Tamb=25°C
Gain (dB)
Phase (°)
10
4
10
5
10
6
10
7
−5 0
−4 0−4 0
−3 0
−2 0−2 0
−1 0
00
10
2020
30
4040
50
−1 8 0
−1 5 0−1 5 0
−1 2 0−1 2 0
−9 0−9 0
−6 0−6 0
−3 0−3 0
0
3030
6060
9090
120120
150150
180
Vcc=16V, Vicm=0.5V, G= −100
Rl=1kOhms, Cl=100pF, Vrl=Vcc/2
Tamb=25°C
Gain (dB)
Phase (°)
Figure 17. Voltage gain and phase vs.
frequency at VCC = 16 V and
Vicm = 15.5 V at T = 25° C
Figure 18. Voltage gain and phase vs.
frequency at VCC =16V and
Vicm = 0.5 V at T = 25° C
10
4
10
5
10
6
10
7
−5 0
−4 0−4 0
−3 0
−2 0−2 0
−1 0
00
10
2020
30
4040
50
180
150150
120120
−9 0−9 0
−6 0−6 0
−3 0−3 0
0
3030
6060
9090
120120
150150
180
Vcc=16V, Vicm=15.5V, G= −100
Rl=1kOhms, Cl=100pF, Vrl=Vcc/2
Tamb=25°C
Gain (dB)
Phase (°)
10
4
10
5
10
6
10
7
−5 0
−4 0−4 0
−3 0
−2 0−2 0
−1 0
00
10
2020
30
4040
50
−1 8 0
−1 5 0−1 5 0
−1 2 0−1 2 0
−9 0−9 0
−6 0−6 0
−3 0−3 0
0
3030
6060
9090
120120
150150
180
Vcc=16V, Vicm=0.5V, G= −100
Rl=1kOhms, Cl=100pF, Vrl=Vcc/2
Tamb=25°C
Gain (dB)
Phase (°)
Electrical characteristics RHF43B
10/15 Doc ID 13477 Rev 5
Figure 19. Inverting large signal pulse
response at VCC =3V, T=25°C
Figure 20. Inverting Large signal pulse
response at VCC = 16 V, T = 25° C
-0.5 0.00.0 0.5 1.0 1.5 2.02.0 2.5 3.0 3.5 4.04.0 4.5
-2.0-2.0
-1.5-1.5
-1.0-1.0
-0.5-0.5
0.00.0
0.50.5
1.01.0
1.51.5
2.02.0
Vcc=3V, Vin=1Vpp
G=-100
Output Voltage (V))
-1.0-1.0 0.0 1.01.0 2.0 3.03.0 4.0 5.05.0 6.0 7.07.0 8.0 9.09.0
-8-8
-6-6
-4-4
-2-2
00
22
44
66
88
Vcc=16V, Vin=1Vpp,
G= -100
Output Voltage (V))
RHF43B Package information
Doc ID 13477 Rev 5 11/15
3 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Package information RHF43B
12/15 Doc ID 13477 Rev 5
3.1 Ceramic Flat-8 package information
Figure 21. Ceramic Flat-8 package mechanical drawing
Table 5. Ceramic Flat-8 package mechanical data
Ref.
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 2.24 2.44 2.64 0.088 0.096 0.104
b 0.38 0.43 0.48 0.015 0.017 0.019
c 0.10 0.13 0.16 0.004 0.005 0.006
D 6.35 6.48 6.61 0.250 0.255 0.260
E 6.35 6.48 6.61 0.250 0.255 0.260
E2 4.32 4.45 4.58 0.170 0.175 0.180
E3 0.88 1.01 1.14 0.035 0.040 0.045
e 1.27 0.050
L 3.00 0.118
Q 0.66 0.79 0.92 0.026 0.031 0.092
S1 0.92 1.12 1.32 0.036 0.044 0.052
N08 08
RHF43B Ordering information
Doc ID 13477 Rev 5 13/15
4 Ordering information
Note: Contact your ST sales office for information regarding the specific conditions for products in
die form and QML-Q versions.
Table 6. Order codes
Order code SMD pin Quality level Package Lead
finish Packing Marking EPPL
RHF43BK1 - Engineering
model Flat-8 Gold Strip pack RHF43BK1 -
RHF43BK-01V 5962F062370
1VXC QMLV-Flight Flat-8 Gold Strip pack 5962F06237
01VXC Y
RHF43BDIE2V 5962F062370
1V9A QMLV-Flight Die - Strip pack - -
Revision history RHF43B
14/15 Doc ID 13477 Rev 5
5 Revision history
Table 7. Document revision history
Date Revision Changes
21-May-2007 1 First public release.
10-Dec-2007 2
Changed name of pins on pinout diagram on cover page.
Modified supply current values over temperature range in electrical
characteristics.
Power dissipation removed from AMR table.
29-Jan-2008 3
Added ELRS-free rad-hard design in description on cover page.
Modified description of heavy ion latch-up (SEL) immunity parameter
in Table 1 on page 2.
11-May-2009 4
Updated radiation immunity in Features on page 1 and in Ta bl e 1 o n
page 2.
Updated smb reference in Features on page 1.
15-Oct-2009 5
Updated test conditions for Avd vs. Vicm in Table 3 on page 3 and
Table 4 on page 5.
Updated input current and voltage noise in Ta b l e 3 .
Updated order codes in Table 6 on page 13.
RHF43B
Doc ID 13477 Rev 5 15/15
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