TRANSYS FLECTRONIES LIMITED Designed for Complementary Use with the BD242 Series 40 W at 25C Case Temperature 3 A Continuous Collector Current 5 A Peak Collector Current Customer-Specified Selections Available absolute maximum ratings BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS TO-220 PACKAGE (TOP VIEW) O Pin 2 is in electrical contact with the mounting base. at 25C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BD241 55 Collector-emitter voltage (Rpg = 100 Q) BD241A VceR vo Vv BD241B 90 BD241C 115 BD241 45 Collector-emitter voltage (lc = 30 mA) BD241A VcEo 60 Vv BD241B 80 BD241C 100 Emitter-base voltage VEBo 5 Vv Continuous collector current lo 3 A Peak collector current (see Note 1) lom 5 A Continuous base current lB 1 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Prot 40 WwW Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Prot 2 WwW Unclamped inductive load energy (see Note 4) VYoLIo? 32 mJ Operating junction temperature range Tj -65 to +150 C Storage temperature range Tstg -65 to +150 C Lead temperature 3.2 mm from case for 10 seconds TL 250 C NOTES: 1. This value applies for t, < 0.3 ms, duty cycle < 10%. 2. Derate linearly to 150C case temperature at the rate of 0.32 W/C. 3. Derate linearly to 150C free air temperature at the rate of 16 MW/C. 4. VBE(ott) =0, Rs = 0.1 Q, Voc =20V. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 MH, Ipon) = 0.4 A, Rape = 100 Q, BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN | TYP | MAX | UNIT BD241 45 Vv Collector-emitter [= 30mA le =0 BD241A 60 Vv (BR)CEO breakdown voltage c B BD241B 80 (see Note 5) BD241C 100 Vop= 55V Vee =0 BD241 0.2 | Collector-emitter Vop = 70V Veg = 0 BD241A 0.2 mA CES cut-off current Vog= 90V Veg = 0 BD241B 0.2 Vop = 115 V Veg =0 BD241C 0.2 | Collector cut-off Vcg= 30V lp =O BD241/241A 0.3 mA CEO current Voge = 60V Ip =0 BD241B/241C 0.3 leo Emitter cut-off Vep= 5V Ie=0 : mA current Forward current Vep= 4V Ilc= 1A 25 Nee . (see Notes 5 and 6) transfer ratio Vep= 4V Ic= 3A 10 Voeteaty e eotoremitter In= 0.6A lo= 3A (see Notes 5 and 6) 12] Vv (sat) saturation voltage B c Vee paseremitter Voe= 4V lo= 3A (see Notes 5 and 6) 18 | Vv voltage Small signal forward Ne . Vop = 10V Ic =0.5A f=1kHz 20 current transfer ratio Small signal forward [Niel . Vop = 10V Ic =0.5A f= 1 MHz 3 current transfer ratio NOTES: 5. These parameters must be measured using pulse techniques, t, = 300 us, duty cycle < 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER MIN | TYP | MAX | UNIT Rec Junction to case thermal resistance 3.125} C/W Roya Junction to free air thermal resistance 62.5 C/W resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS t MIN | TYP | MAX | UNIT ton Turn-on time Ic=1A IBjon) = 0.1A IBoott) =-0.1A 0.3 us tott Turn-off time VeE(otty = 3-7 V R_ =202 tp = 20 us, de < 2% 1 Us t Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. - DC Current Gain Neg 1000 BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN VS COLLECTOR CURRENT Vog =4V t, = 300 ps, duty cycle < 2% 100 10 0-01 0-1 1-0 I, - Collector Current - A Figure 1. - Base-Emitter Voltage - V Vee Ty =25C T, = 80C COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 10 > oD gs S > 5 3 1-0 > 3 g Wl 2 ot 2 8 I, = 100 mA 2 lo = 300 mA 8 iy Ip=1A > Ip=3A 0-01 10 0-1 1-0 10 100 1000 |, - Base Current - mA Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 1-0 TTT Voe=4V Ty = 25C 0-9 7 / / 0-8 / JL 0-7 J 4; | a 0-6 0-5 0-01 0-1 1-0 10 |, - Collector Curre Figure 3. nt-A BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 t, = 300 us, d=0.1 = 10% t,= 1ms,d=0.1 = 10% t, = 10 ms, d= 0.1 = 10% 10 DC Operation < 6 Ss 10 3 9 oO - 0-1 0-01 1-0 10 100 1000 Vog - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION VS CASE TEMPERATURE 50 = 40 8 5 30 N o : \ a 20 \ s \ a= 10 N 0 0 25 50 75 100 125 150 T, - Case Temperature - C Figure 5. BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. T0220 470 4,20 3,96 < > 1,32 9371 2,95 123 L 2,54 see Note B 6,6 __. CD 4 60 15,90 14,55 see Note C _ 64 3,5 ee eel ph ____ v Kl 14,1 1,70 12,7 0,97 1,07 0,61 @) @) @) i u 2,74 0,64 2,34 0,41 5,28 2,90 4,88 2,40 VERSION 1 : VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm.