Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 19
1Publication Order Number:
MM3Z2V4ST1/D
MM3ZxxxST1G Series,
SZMM3ZxxxST1G Series
Zener Voltage Regulators
200 mW SOD−323 Surface Mount
Tight Tolerance Portfolio
This series of Zener diodes is packaged in a SOD−323 surface
mount package that has a power dissipation of 200 mW. They are
designed to provide voltage regulation protection and are especially
attractive in situations where space is at a premium. They are well
suited for applications such as cellular phones, hand−held portables,
and high density PC boards.
Specification Features
Standard Zener Breakdown Voltage Range − 3.3 V to 36 V
Steady State Power Rating of 200 mW
Small Body Outline Dimensions:
− 0.067 x 0.049 (1.7 mm x 1.25 mm)
Low Body Height: 0.035 (0.9 mm)
Package Weight: 4.507 mg/unit
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Tight Tolerance VZ
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
Mechanical Characteristics:
CASE: Void-free, transfer-molded plastic
FINISH: All external surfaces are corrosion resistant
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
LEADS: Plated with Pb−Sn or Sn only (Pb−Free)
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MOUNTING POSITION: Any
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping†
ORDERING INFORMATION
SOD−323
CASE 477
STYLE 1
1
Cathode
2
Anode
MARKING DIAGRAM
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
DEVICE MARKING INFORMATION
XX = Specific Device Code
M = Date Code*
G= Pb−Free Package
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
MM3ZxxxST1G SOD−323
(Pb−Free)
3,000 /
Tape & Reel
MM3ZxxxST3G SOD−323
(Pb−Free)
10,000 /
Tape & Reel
XXMG
G
*Date Code orientation may vary
depending upon manufacturing location.
(Note: Microdot may be in either location)
SZMM3ZxxxST1G SOD−323
(Pb−Free)
3,000 /
Tape & Reel
MM3ZxxxST1G Series, SZMM3ZxxxST1G Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) @ TA = 25C
Derate above 25C
PD200
1.5
mW
mW/C
Thermal Resistance from Junction−to−Ambient RqJA 635 C/W
Junction and Storage Temperature Range TJ, Tstg −65 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. FR−4 Minimum Pad.
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted,
VF = 0.9 V Max. @ IF = 10 mA for all types)
Symbol Parameter
VZReverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
IZK Reverse Current
ZZK Maximum Zener Impedance @ IZK
IRReverse Leakage Current @ VR
VRReverse Voltage
IFForward Current
VFForward Voltage @ IF
QVZMaximum Temperature Coefficient of VZ
CMax. Capacitance @VR = 0 and f = 1 MHz Zener Voltage Regulator
IF
V
I
IR
IZT
VR
VZ
VF
MM3ZxxxST1G Series, SZMM3ZxxxST1G Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (VF = 0.9 Max @ IF = 10 mA for all types)
Device*
Device
Marking
Test
Current
Izt mA
Zener Voltage VZ ZZK IZ
= 0.5
mA W
Max
ZZT
IZ = IZT
@ 10%
Mod W
Max
Max
IR @ VR
dVZ/dt (mV/k)
@ IZT1 = 5 mA C pF Max @
VR = 0
f = 1 MHz
Min Max mAV Min Max
MM3Z3V0ST1G T4 5.0 2.90 3.11 1000 100 10 1.0 −3.5 0 450
MM3Z3V3ST1G T5 5.0 3.32 3.53 1000 95 5.0 1.0 −3.5 0 450
MM3Z3V9ST1G T7 5.0 3.89 4.16 1000 90 3.0 1.0 −3.5 −2.5 450
MM3Z4V3ST1G T8 5.0 4.17 4.43 1000 90 3.0 1.0 −3.5 0 450
MM3Z4V7ST1G T9 5.0 4.55 4.75 800 80 3.0 2.0 −3.5 0.2 260
MM3Z5V1ST1G TA 5.0 4.98 5.2 500 60 2.0 2.0 −2.7 1.2 225
MM3Z5V6ST1G TC 5.0 5.49 5.73 200 40 1.0 2.0 −2.0 2.5 200
MM3Z6V2ST1G TE 5.0 6.06 6.33 100 10 3.0 4.0 0.4 3.7 185
MM3Z6V8ST1G TF 5.0 6.65 6.93 160 15 2.0 4.0 1.2 4.5 155
MM3Z7V5ST1G TG 5.0 7.28 7.6 160 15 1.0 5.0 2.5 5.3 140
MM3Z8V2ST1G TH 5.0 8.02 8.36 160 15 0.7 5.0 3.2 6.2 135
MM3Z9V1ST1G TK 5.0 8.85 9.23 160 15 0.5 6.0 3.8 7.0 130
MM3Z10VST1G WB 5.0 9.80 10.20 160 15 0.5 6.0 4.5 8.0 130
MM3Z12VST1G TN 5.0 11.74 12.24 80 25 0.1 8.0 6.0 10 130
MM3Z15VST1G TP 5.0 14.34 14.98 80 40 0.1 11 8.8 12.7 130
MM3Z16VST1G TU 5.0 15.85 16.51 80 40 0.05 11.2 10.4 14 105
MM3Z18VST1G TW 5.0 17.56 18.35 80 45 0.05 12.6 12.4 16 100
MM3Z22VST1G WP 5.0 21.54 22.47 100 55 0.05 15.4 16.4 20 85
MM3Z24VST1G WT 5.0 23.72 24.78 120 70 0.05 16.8 18.4 22 80
MM3Z27VST1G WQ 5.0 26.19 27.53 300 80 0.05 18.9 21.4 25.3 70
MM3Z33VST1G WR 5.0 32.15 33.79 300 80 0.05 23.2 27.4 33.4 70
MM3Z36VST1G WU 5.0 35.07 36.87 500 90 0.05 25.2 30.4 37.4 70
*Include SZ-prefix devices where applicable.
MM3ZxxxST1G Series, SZMM3ZxxxST1G Series
http://onsemi.com
4
TYPICAL CHARACTERISTICS
VZ, NOMINAL ZENER VOLTAGE
Figure 1. Effect of Zener Voltage on
Zener Impedance
103.0
ZZT, DYNAMIC IMPEDANCE ( )
1000
100
10
1.0
TJ = 25C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IZ = 1 mA
5 mA
VF
, FORWARD VOLTAGE (V)
Figure 2. Typical Forward Voltage
1.21.11.00.90.80.70.60.50.4
IF, FORWARD CURRENT (mA)
1000
100
10
1.0
150C
75C 25C 0C
C, CAPACITANCE (pF)
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 3. Typical Capacitance
1000
100
10
1.0 104.0
BIAS AT
50% OF VZ NOM
TA = 25C
0 V BIAS 1 V BIAS
IR, LEAKAGE CURRENT ( A)
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 4. Typical Leakage Current
1000
100
10
1.0
0.1
0.01
0.001
0.0001
0.00001 105.00
+150C
+25C
−55C
VZ, ZENER VOLTAGE (V)
100
10
1.0
0.1
0.01 108.06.04.02.00
TA = 25C
IZ, ZENER CURRENT (mA)
Figure 5. Zener Voltage versus Zener Current
(VZ Up to 9 V)
TEMPERATURE (C)
250
100
40
20
0
POWER DISSIPATION (%)
50 75 100 125 150
80
60
Figure 6. Steady State Power Derating
MM3ZxxxST1G Series, SZMM3ZxxxST1G Series
http://onsemi.com
5
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE H
1.60
0.063
0.63
0.025
ǒmm
inchesǓ
SCALE 10:1
0.83
0.033
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. CATHODE
2. ANODE
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF
RADIUS.
NOTE 3
D
12bE
A3
A1
A
CNOTE 5
L
HE
DIM MIN NOM MAX
MILLIMETERS
A0.80 0.90 1.00
A1 0.00 0.05 0.10
A3 0.15 REF
b0.25 0.32 0.4
C0.089 0.12 0.177
D1.60 1.70 1.80
E1.15 1.25 1.35
0.08
2.30 2.50 2.70
L
0.031 0.035 0.040
0.000 0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN NOM MAX
INCHES
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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MM3Z2V4ST1/D
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