FEATURES
• This product is suitable for medium output power (800 mW) amplification
P
O = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz
P
O = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f = 900 MHz
• MSG (Maximum Stable Gain) = 23 dB TYP., @ VCE = 3.6 V, Ic = 100 mA, f = 460 MHz
• Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 20 V
• 3-pin power minimold (34 PKG)
ORDERING INFORMATION
Part Number Order Number Package Quantity Supplying Form
NESG250134 NESG250134-AZ 3-pin power minimold
(Pb-Free) Note1, 2
25 pcs
(Non reel)
• Magazine case
NESG250134-T1 NESG250134-T1-AZ 1 kpcs/reel • 12 mm wide embossed taping
• Pin 2 (Emitter) face the perforation side of the tape
Notes 1. Contains lead in the part except the electrode terminals.
2. With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 9.2 V
Emitter to Base Voltage VEBO 2.8 V
Collector Current IC 500 mA
Total Power Dissipation Ptot Note 1.9 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
Note Mounted on 34.2 cm2 × 0.8 mm (t) glass epoxy PWB
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON GERMANIUM RF TRANSISTOR
NESG250134
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (800 mW)
3-PIN POWER MINIMOLD (34 PKG)
Document No. PU10422EJ03V0DS (3rd edition)
Date Published October 2004 CP(K)
Printed in Japan
The mark shows major revised points.
NEC Compound Semiconductor Devices, Ltd. 2003, 2004
THERMAL RESISTANCE (TA = +25°C)
Parameter Symbol Ratings Unit
Termal Resistance from Junction to
Ambient Note
Rthj-a 65 °C/W
Note Mounted on 34.2 cm2 × 0.8 mm (t) glass epoxy PWB
RECOMMENDED OPERATING RANGE (TA = +25°C)
Parameter Symbol MIN. TYP. MAX. Unit
Collector to Emitter Voltage VCE − 3.6 4.5 V
Collector Current IC − 400 500 mA
Input Power Note Pin − 12 17 dBm
Note Input power under conditions of VCE ≤ 4.5 V, f = 460 MHz
Data Sheet PU10422EJ03V0DS
2
NESG250134
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 1
µ
A
Emitter Cut-off Current IEBO VEB = 0.5 V, IC = 0 mA − − 1
µ
A
DC Current Gain hFE Note 1 VCE = 3 V, IC = 100 mA 80 120 180 −
RF Characteristics
Gain Bandwidth Product fT VCE = 3.6 V, IC = 100 mA, f = 460 MHz − 10 − GHz
Insertion Power Gain S21e2 VCE = 3.6 V, IC = 100 mA, f = 460 MHz − 19 − dB
Maximum Satble Gain MSG Note 2 VCE = 3.6 V, IC = 100 mA, f = 460 MHz − 23 − dB
Linner gain (1) GL VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 460 MHz, Pin = 0 dBm
16 19 − dB
Linner gain (2) GL VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 900 MHz, Pin = 0 dBm
− 16 − dB
Output Power (1) Po VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 460 MHz, Pin = 15 dBm
27 29 − dBm
Output Power (2) Po VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 900 MHz, Pin = 20 dBm
− 29 − dBm
Collector Efficiency (1)
η
c VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 460 MHz, Pin = 15 dBm
− 60 − %
Collector Efficiency (2)
η
c VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 900 MHz, Pin = 20 dBm
− 60 − %
Notes 1. Pulse measurement: PW ≤ 350
µ
s, Duty Cycle ≤ 2%
2. MSG =
hFE CLASSIFICATION
Rank FB
Marking SN
hFE Value 80 to 180
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/
S21
S12
Data Sheet PU10422EJ03V0DS 3
NESG250134
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
1.6
1.2
1.0
0.6
0.2
0246810
f = 1 MHz
1.4
0.8
0.4
VCE = 3 V
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
1 000 VCE = 4 V
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
1 000
200
500
300
100
02135
IB = 1 mA
4 mA
6 mA
2 mA
10 mA
3 mA
5 mA
8 mA
9 mA
7 mA
400
4
Reverse Transfer Capacitance Cre (pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Collector Current IC (mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector Current IC (mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector Current IC (mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Total Power Dissipation Ptot (mW)
Ambient Temperature TA (˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
2.0
1.6
1.9
1.2
0.8
0.4
025 50 75 100 125 150
Nature Neglect
Mounted on Glass epoxy PWB
(34.2 cm2 × 0.8 mm (t) )
Remark The graphs indicate nominal characteristics.
Data Sheet PU10422EJ03V0DS
4
NESG250134
1 000
100
10 10010 1 000
VCE = 3 V
1 000
100
10 10010 1 000
VCE = 4 V
20
16
12
8
4
0
10 100 1 000
VCE = 3 V
f = 460 MHz
20
16
12
8
4
0
10 100 1 000
VCE = 3.6 V
f = 460 MHz
20
16
12
8
4
0
10 100 1 000
VCE = 4 V
f = 460 MHz
VCE = 3 V
IC = 100 mA
40
30
25
20
15
10
5
0
0.1 1 10
MAG
MSG
|S21e|2
35
DC Current Gain hFE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC Current Gain hFE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10422EJ03V0DS 5
NESG250134
VCE = 3 V
f = 460 MHz
30
25
15
10
0
10 100 1 000
MAG
MSG
|S21e|2
20
5
VCE = 3 V
f = 900 MHz
25
20
10
5
–5
10 100 1 000
|S21e|2
15
0
VCE = 3.6 V
f = 460 MHz
30
25
15
10
0
10 100 1 000
|S21e|2
20
5
VCE = 3.6 V
f = 900 MHz
25
20
10
5
–5
10 100 1 000
|S21e|2
15
0
MAG
MSG
VCE = 3.6 V
IC = 100 mA
40
30
25
20
15
10
5
0
0.1 1 10
MAG
MSG
|S21e|2
35
40
30
25
20
15
10
5
0
0.1 1 10
|S21e|2
VCE = 4 V
IC = 100 mA
35
MAG
MSG
MAG
MSG
MAG
MSG
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10422EJ03V0DS
6
NESG250134
VCE = 4 V
f = 460 MHz
30
25
15
10
0
10 100 1 000
|S21e|2
20
5
VCE = 4 V
f = 900 MHz
25
20
10
5
–5
10 100 1 000
|S21e|2
15
0
MAG
MSG
MAG
MSG
5
4
3
2
1
0
25
10
5
20
15
0
10 100 1 000
VCE = 3.6 V
f = 460 MHz
Ga
NF
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain Ga (dB)
V
CE
= 3.6 V, f = 460 MHz
I
C (set)
= 30 mA
GP
Pout
IC
C
η
30
25
20
15
10
5
0
600
100
200
300
500
400
0
–10 50–5 10 15 20
V
CE
= 3.6 V, f = 900 MHz
I
C (set)
= 30 mA
GP
Pout
IC
C
η
30
25
20
15
10
5
0
600
100
200
300
500
400
0
–10 50–5 10 15 20
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Output Power Pout (dBm), Power Gain GP (dB)
Collector Current IC (mA), Collector Efficiency C (%)
η
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Output Power Pout (dBm), Power Gain GP (dB)
Collector Current IC (mA), Collector Efficiency C (%)
η
Remark The graphs indicate nominal characteristics.
Data Sheet PU10422EJ03V0DS 7
NESG250134
PA EVALUATION BOARD (f = 460 MHz)
GND V
b
V
C
GND
SN
SN
C1
C2
C3 C4 C5 C6
L1 L2
C8
C7
C9 R1 C10
RF IN RF OUT
Notes
1. 38 × 90 mm, t = 0.8 mm double sided copper clad glass epoxy PWB.
2. Back side: GND pattern
3. Solder gold plated on pattern
4. : Through holes
PA EVALUATION CIRCUIT (f = 460 MHz)
RF IN
C1
C2 C3 C4 C5
V
BE
C9
L1
RF OUT
C6 C7
C8
V
CE
L2
R1
C10
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
Data Sheet PU10422EJ03V0DS
8
NESG250134
COMPONENT LIST
Value Maker
C1 30 pF Murata
C2 6 pF Murata
C3, C4 7 pF Murata
C5 3 pF Murata
C6 0.5 pF Murata
C7 5 pF Murata
C8 10 pF Murata
C9, C10 100 nF Murata
L1 100 nH Toko
L2 3 nH Toko
R1 30 Ω SSM
PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS
V
CE
= 3.6 V, f = 460 MHz
I
C (set)
= 40 mA
G
P
P
out
I
C
C
η
30
25
20
15
10
5
0
600
100
200
300
500
400
0
–10 50–5 10 15 20
Input Power P
in
(dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Output Power P
out
(dBm), Power Gain G
P
(dB)
Collector Current I
C
(mA), Collector Efficiency
C
(%)
η
Remark The graph indicates nominal characteristics.
Data Sheet PU10422EJ03V0DS 9
NESG250134
DISTORTION EVALUATION BOARD (f = 460 MHz)
GND V
b
V
C
GND
SN
SN
C1
C2 C4 C5 C6
L1 L2
C9
C8
C10 R1 C12
RF IN RF OUT
C3 C7
C11
Notes
1. 38 × 90 mm, t = 0.8 mm, double sided copper clad glass epoxy PWB.
2. Back side: GND pattern
3. Solder gold plated on pattern
4. : Through holes
DISTORTION EVALUATION CIRCUIT (f = 460 MHz)
RF IN
C1
C2 C3 C4 C5
V
BE
C10
L1
RF OUT
C6 C8
C9
V
CE
L2
R1
C12
C7
C11
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
Data Sheet PU10422EJ03V0DS
10
NESG250134
COMPONENT LIST
Value Maker
C1 47 pF Murata
C2 12 pF Murata
C3, C4 7 pF Murata
C5 3 pF Murata
C6 6 pF Murata
C7 0.5 pF Murata
C8 5 pF Murata
C9 51 pF Murata
C10, C12 100 nF Murata
C11 1
µ
F Murata
L1 100 nH Toko
L2 15 nH Toko
R1 30 Ω SSM
DISTORTION EVALUATION CIRCUIT TYPICAL CHARACTERISTICS
80
60
40
20
0
70
50
30
10
–5 0 5 10 15 20 25
3rd Order Intermodulation Distortion IM
3
(dBc)
1 tone Output Power P
out
(dBm)
3RD ORDER
INTERMODULATION DISTORTION
vs. 1 TONE OUTPUT POWER
V
CE
= 3.6 V, f = 460 MHz,
I
C (set)
= 30 mA, offset = 1 MHz
Remark The graph indicates nominal characteristics.
Data Sheet PU10422EJ03V0DS 11
NESG250134
PACKAGE DIMENSIONS
3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm)
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
1.5±0.1
0.41
+0.03
–0.06
4.5±0.1
0.42±0.060.42±0.06
1.6±0.2
3.0
1.5
2
13
2.5±0.1
4.0±0.25
0.8 MIN.
0.47±0.06
Data Sheet PU10422EJ03V0DS
12
NESG250134
M8E 00. 4 - 0110
The information in this document is current as of October, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
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Descriptions of circuits, software and other related information in this document are provided for illustrative
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circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
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semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
•
•
•
•
•
•
Data Sheet PU10422EJ03V0DS 13
NESG250134
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
TEL: +886-2-8712-0478
TEL: +82-2-558-2120
FAX: +852-3107-7309
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FAX: +82-2-558-5209
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California Eastern Laboratories, Inc. http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0406
NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/
E-mail: salesinfo@ml.ncsd.necel.com (sales and general)
techinfo@ml.ncsd.necel.com (technical)
Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
For further information, please contact
NESG250134
