TSC5301D
High Voltage NPN Transistor with Diode
1/5 Version: E07
TO-92
PRODUCT SUMMARY
BVCEO
400V
BVCBO
700V
IC
1A
VCE(SAT)
1.1V @ IC / IB = 1A / 0.25A
Features
● Build-in Free-wheeling Diode Makes Efficient Anti-saturation
Operation
● No Need to Interest an hfe Value Because of Low Variable
Storage-time Spread Even Though Comer Spirit Product.
● Low Base Drive Requirement
● Suitable for Half Bridge Light Ballast Application
Structure
● Silicon Triple Diffused Type
● NPN Silicon Transistor with Diode
Ordering Information
Part No.
Packing
TSC5301DCT B0
1Kpcs / Bulk
TSC5301DCT B0G
1Kpcs / Bulk
TSC5301DCT A3
2Kpcs / Ammo
TSC5301DCT A3G
2Kpcs / Ammo
Note: “G” denote for Halogen free
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
700V
V
Collector-Emitter Voltage
VCEO
400V
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
1
A
Collector Peak Current (tp <5ms)
ICM
2
A
Base Current
IB
0.5
A
Base Peak Current (tp <5ms)
IBM
1
A
Total Dissipation @ Tc ≤ 25oC
Ptot
0.6
W
Maximum Operating Junction Temperature
TJ
+150
oC
Storage Temperature Range
TSTG
-65 to +150
oC
Block Diagram
Pin Definition:
1. Emitter
2. Collector
3. Base
TSC5301D
High Voltage NPN Transistor with Diode
2/5 Version: E07
Thermal Performance
Parameter
Symbol
Limit
Unit
Junction to Case Thermal Resistance
RӨJC
83.3
oC/W
Junction to Ambient Thermal Resistance
RӨJA
200
oC/W
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC = 1mA, IB = 0
BVCBO
700
--
--
V
Collector-Emitter Breakdown Voltagea
IC = 10mA, IE = 0
BVCEO
400
--
--
V
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
BVEBO
10
--
--
V
Collector Cutoff Current
VCB = 700V, IE = 0
ICBO
--
--
1
uA
Emitter Cutoff Current
VEB = 9V, IC = 0
IEBO
--
--
1
uA
IC =0.5A, IB =0.1A
VCE(SAT)1
--
--
0.5
Collector-Emitter Saturation Voltagea
IC =1A, IB =0.25A
VCE(SAT)2
--
1.1
1.5
V
IC =0.5A, IB =0.1A
VBE(SAT)1
--
--
1.1
Base-Emitter Saturation Voltagea
IC =1A, IB =0.25A
VBE(SAT)2
--
--
1.2
V
VCE =5V, IC =10mA
hFE 1
10
--
--
VCE =5V, IC =400mA
hFE 2
10
--
30
DC Current Gain
VCE =5V, IC =1A
hFE 3
5
--
--
Turn On Time
tON
--
0.5
0.7
uS
Storage Time
tSTG
--
0.5
0.9
uS
Fall Time
VCC =250V, IC =1A,
IB1=IB2 =0.2A, tp =25uS
Duty Cycle<1%
tf
--
0.2
0.4
uS
Diode
Fall Time
IC =1A
tF
--
--
800
uS
Forward Voltage Drop
IC =1A
Vf
--
--
1.4
V
Notes:
a. Pulsed duration = 300uS, duty cycle ≤2%
TSC5301D
High Voltage NPN Transistor with Diode
3/5 Version: E07
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. Static Characteristics
Figure 2. DC Current Gain
Figure 3. Vce(sat) v.s. Vbe(sat)
Figure 4. Power Derating
Figure 5. Safety Operating Area
TSC5301D
High Voltage NPN Transistor with Diode
4/5 Version: E07
TO-92 Mechanical Drawing
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
L
= Lot Code
TO-92 DIMENSION
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
A
4.30
4.70
0.169
0.185
B
4.30
4.70
0.169
0.185
C
13.53 (typ)
0.532 (typ)
D
0.39
0.49
0.015
0.019
E
1.18
1.28
0.046
0.050
F
3.30
3.70
0.130
0.146
G
1.27
1.31
0.050
0.051
H
0.33
0.43
0.013
0.017
TSC5301D
High Voltage NPN Transistor with Diode
5/5 Version: E07
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