©2000 Fairchild Semiconductor International Rev. A, February 2000
BU806/807
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulsed: pulsed duration = 300µs, duty cycle = 1.5%
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BU806
: BU807 400
330 V
V
VCEO Collector-Emitter Voltage
: BU806
: BU807 200
150 V
V
VEBO Emitter-Base Voltage 6 V
IC Collector Current (DC) 8 A
ICP *Collector Current (Pulse) 15 A
IB Base Current 2 A
PC Collector Dissipation (TC=25°C) 60 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~150 °C
Symbol Parameter Test Condition Min. Max. Units
VCEO (sus) * Collector-Em itte r Sustaining Voltage
: BU806
: BU807
IC = 100mA, IB = 0 200
150 V
V
ICES Collector Cut-off Current
: BU806
: BU807 VCE = 400V, VBE = 0
VCE = 330V, VBE = 0 100
100 µA
µA
ICEV Collector Cut-off Current
: BU806
: BU807
VCE = 400V, VBE = -6V
VCE = 330V, VBE = -6V 100
100 µA
µA
IEBO E mitter Cut-off Current VBE = 6V, IC = 0 3 mA
VCE(sat) * Collector-Emitter Saturation Voltage IC = 5A, IB = 50mA 1.5 V
VBE(sat) * Base-Emitter Satur ation Voltage IC = 5A, IB = 50mA 2.4 V
VF* Damper Diode Forward Voltage IF = 4A 2 V
BU806/807
High Voltage & Fast Switching Darlington
Transistor
• Using In Horizontal Output Stages of 110°
°°
° Crt Video Displays
• BUILT-IN SPEED-UP Diode Between Base and Emitter
1.Base 2.Collector 3.Emitter
1TO-220
©2000 Fairchild Semiconductor International
BU806/807
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 3. Damper Diode Figure 4. Safe Operating Area
Figure 5. Power Derating
0.1 1 10
10
100
1000
VCE = 1.5V
VCE = 5V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10 100
0.1
1
10
Ic = 100 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10
0.1
1
10
Vf[V], FORWA RD VOLT AGE
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10 100 1000
0.01
0.1
1
10
100
1000
10us
100us
BU806
500us
10ms
1ms
BU807
DC
IC MAX. (Pulse)
IC MAX. (DC)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 50 100 150 200
0
10
20
30
40
50
60
70
80
PC[W], POWER DIS SIPATION
TC[oC], CASE TEMPERATURE
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BU806/807
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
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MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
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UHC™
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2. A critical component is any component of a life support
device or system whose failure to perform can be
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device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This dat asheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Product Folder - Fairchild P/N BU807 - NPN Epitaxial Silicon Darlington Transistor
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Contents
Features | Applications | Product
status/pricing/packaging
Features
● Using In Horizontal Output Stages of
110º Crt Video Displays
● BUILT-IN SPEED-UP Diode Between
Base and Emitter
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Applications
High Voltage & Fast Switching Darlington
Transistor
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Product status/pricing/packaging
Product Product status Pricing* Package type Leads Packing method
BU807 Full Production $0.56 TO-220 3 BULK
BU807TU Full Production $0.56 TO-220 3 RAIL
* 1,000 piece Budgetary Pricing
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